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51. 发明授权

US08647747B2 Hybrid silicon wafer and method of producing the same 有权
标题翻译：混合硅晶片及其制造方法
公开(公告)号：US08647747B2
公开(公告)日：2014-02-11
申请号：US12832150
申请日：2010-07-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： B32B3/02 , B32B9/04 , B32B13/04 , C01B33/02 , B29D7/00
CPC分类号： C30B33/06 , C01B32/05 , C30B11/00 , C30B29/06 , Y10T428/21
摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.
摘要翻译：提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体晶体部分。另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭硅和多晶硅，并从其中切出晶片形状。所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

52. 发明授权

US08642165B2 Organic-inorganic hybrid composition 有权
标题翻译：有机 - 无机杂化组合物
公开(公告)号：US08642165B2
公开(公告)日：2014-02-04
申请号：US12527267
申请日：2008-03-27
申请人： Ryo Suzuki , Hiroaki Mochizuki , Tatsuhiko Obayashi
发明人： Ryo Suzuki , Hiroaki Mochizuki , Tatsuhiko Obayashi
IPC分类号： B32B5/16 , B32B27/32 , C08G75/04 , C08K3/22 , G02B1/02
CPC分类号： C08K3/01 , Y10T428/256 , C08L43/02
摘要： An organic-inorganic hybrid composition comprising a thermoplastic resin and inorganic fine particles, wherein the thermoplastic resin is a resin comprising a repeat unit in which a structure unit represented by the following formula (1) is contained in the main chain of the repeat unit: wherein R represents an alkyl group, an aryl group, an alkoxy group, an aryloxy group or hydroxyl group; and A0 represents oxygen atom, sulfur atom or selenium atom.
摘要翻译：一种包含热塑性树脂和无机细颗粒的有机 - 无机混合组合物，其中热塑性树脂是包含重复单元的树脂，其中由下式（1）表示的结构单元包含在重复单元的主链中：其中R表示烷基，芳基，烷氧基，芳氧基或羟基; A0表示氧原子，硫原子或硒原子。

53. 发明申请

US20130341622A1 Polycrystalline Silicon Wafer 有权
标题翻译：多晶硅片
公开(公告)号：US20130341622A1
公开(公告)日：2013-12-26
申请号：US14003388
申请日：2012-03-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： H01L29/04
CPC分类号： H01L29/04 , C01B33/037 , C30B11/00 , C30B28/06 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.
摘要翻译：提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm，由一件组成。本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

54. 发明授权

US08478180B2 Image heating apparatus 有权
标题翻译：图像加热装置
公开(公告)号：US08478180B2
公开(公告)日：2013-07-02
申请号：US12956522
申请日：2010-11-30
申请人： Kota Arimoto , Ryo Suzuki
发明人： Kota Arimoto , Ryo Suzuki
IPC分类号： G03G15/20 , H05B11/00
CPC分类号： G03G15/2053 , G03G15/2039 , G03G2215/2035
摘要： An image heating apparatus includes a belt including a heat generating layer for generating heat by energization and including a power receiving portion which has electroconductivity and is electrically connected to the heat generating layer; a stationary back-up member, provided inside the belt, for sliding on an inner peripheral surface of the belt; a pressing member for pressing the belt against the back-up member to form a nip in which a recording material is to be nip-conveyed between the belt and itself; and an electroconductive portion, provided on the back-up member, for supplying electric power to the power receiving portion by being electrically connected to the power receiving portion.
摘要翻译：图像加热装置包括：带，其包括通过通电而产生热的发热层，并且包括具有导电性并与发热层电连接的受电部; 固定的支撑构件，设置在所述带内部，用于在所述带的内周面上滑动; 压紧构件，用于将带压靠在支撑构件上，以形成记录材料在带和本身之间被夹持传送的辊隙; 以及设置在所述支撑构件上的导电部分，用于通过电连接到所述受电部分来向所述受电部分提供电力。

55. 发明授权

US08450764B2 Semiconductor light-emitting apparatus and method of fabricating the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08450764B2
公开(公告)日：2013-05-28
申请号：US12615479
申请日：2009-11-10
申请人： Ryo Suzuki , Tadao Hayashi
发明人： Ryo Suzuki , Tadao Hayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L24/80 , H01L33/20 , H01L33/38 , H01L2924/01012 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2924/351 , H01L2924/00
摘要： A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.
摘要翻译：发光装置具有发光装置和支撑基板。发光装置在同一平面上具有一对具有p电极的n电极。支撑板包括分别与发光器件的p电极和n电极相对形成有正极和负极的绝缘基板。接合部件分别将p电极和n电极与正电极和负电极接合。沿着延伸穿过该对n电极的线的横截面，支撑板上的正电极形成在p电极的宽度区域内并且宽度比p电极的宽度窄。负电极分别以相同的宽度与n电极相对，或者与面对正电极的每个负电极的侧面从面向每个n电极的每个n电极的侧面向外缩回 p电极。

56. 发明申请

US20120328067A1 NUCLEAR POWER PLANT 审中-公开
标题翻译：核电站
公开(公告)号：US20120328067A1
公开(公告)日：2012-12-27
申请号：US13478562
申请日：2012-05-23
申请人： Tomohisa KURITA , Mika Tahara , Mitsuo Komuro , Toshimi Tobimatsu , Ryo Suzuki , Ryoichi Hamazaki , Noriyuki Katagiri , Masashi Tanabe
发明人： Tomohisa KURITA , Mika Tahara , Mitsuo Komuro , Toshimi Tobimatsu , Ryo Suzuki , Ryoichi Hamazaki , Noriyuki Katagiri , Masashi Tanabe
IPC分类号： G21C9/00 , G21C9/016
CPC分类号： G21C9/016 , G21C11/08 , G21C13/02 , G21C15/18 , Y02E30/40
摘要： An embodiment of a nuclear power plant has: a reactor vessel containing a core; a reactor containment vessel containing the reactor vessel; and a radiation heat reflecting member disposed at a portion below the reactor vessel inside the reactor containment vessel. The radiation heat reflecting member may block radiation heat, which is emitted toward a side wall surface of the reactor containment vessel from the core that has been put in a molten state by an accident and flowed downward from the reactor vessel to be accumulated at a lower portion of the reactor containment vessel. The radiation heat reflecting member may block radiation heat, which is emitted toward a supporting structure supporting devices disposed inside the reactor containment vessel.
摘要翻译：核电站的一个实施例具有：包含核的反应堆容器; 容纳反应堆容器的反应堆容纳容器; 以及辐射热反射部件，设置在反应堆容纳容器内部的反应器容器下方的部分。辐射热反射构件可以阻挡从反应堆容纳容器的侧壁表面发射的辐射热，该芯从已经被熔融状态的核心发生并且从反应堆容器向下流动以积聚在较低的反应堆容器的一部分。辐射热反射构件可以阻挡朝向设置在反应堆容纳容器内部的支撑结构支撑装置发射的辐射热。

57. 发明授权

US08252422B2 Hybrid silicon wafer and method of producing the same 有权
标题翻译：混合硅晶片及其制造方法
公开(公告)号：US08252422B2
公开(公告)日：2012-08-28
申请号：US12832120
申请日：2010-07-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： B32B9/04 , B32B13/04 , B32B3/02 , D04H1/20 , B29B9/06 , B29C59/00 , B29C67/00
CPC分类号： C30B29/06 , C30B33/06 , Y10T428/21 , Y10T428/24942
摘要： Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.
摘要翻译：提供了由主要由两种或更多种类型的同心单晶硅或多晶硅组成的晶片制成的混合硅晶片，其通过将熔融状态中的一种以固态相互一体化的方式相互一体化，并且具有两个不同的电阻数量级以上。另外提供了一种制造混合硅晶片的方法，其中高电阻率硅或主要由硅组成的晶锭设置在坩埚，熔核或粉末状硅中的中心部分或偏心位置，其具有较低的电阻率在坩埚内的锭周围的空隙部分填充两个数量级以上的块，将熔核或粉末状硅选择性地熔融并与锭结合，形成复合体，并从中切出晶片形状。所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能，或者具有不同功能的两个或多个多晶硅晶片。

58. 发明授权

US08116654B2 Image heating apparatus 有权
标题翻译：图像加热装置
公开(公告)号：US08116654B2
公开(公告)日：2012-02-14
申请号：US12406557
申请日：2009-03-18
申请人： Ryo Suzuki
发明人： Ryo Suzuki
IPC分类号： G03G21/20
CPC分类号： G03G15/2039 , G03G2221/1645
摘要： An image heating apparatus includes a heating rotor which heats a toner image while nipping and conveying a recording material on which the toner image is borne, a fan which cools the heating rotor, a blowing port which is arranged facing the heating rotor and through which blowing air passes from the fan toward the heating rotor, and a shutter which is movable in the longitudinal direction of the heating rotor so as to change opening area of the blowing port, wherein the shutter is moved in the longitudinal direction while rotating the fan after heating operation of the heating rotor to the toner image is completed.
摘要翻译：图像加热装置包括：加热转子，其在夹持并传送其上承载有调色剂图像的记录材料的同时加热调色剂图像;冷却加热转子的风扇;布置成面向加热转子的吹送口空气从风扇向加热转子通过，并且能够沿加热转子的长度方向移动以便改变吹风口的开口面积的挡板，其中挡板在加热后旋转风扇时沿长度方向移动加热转子对调色剂图像的操作完成。

59. 发明授权

US07769523B2 Method and system for estimating an air-intake amount of an internal combustion engine, and internal combustion engine 有权
标题翻译：用于估计内燃机和内燃机的进气量的方法和系统
公开(公告)号：US07769523B2
公开(公告)日：2010-08-03
申请号：US11998854
申请日：2007-11-29
申请人： Hirohide Matsushima , Kenji Takenaka , Takashi Abe , Ryo Suzuki , Takuya Sakamoto , Yoshinobu Mori
发明人： Hirohide Matsushima , Kenji Takenaka , Takashi Abe , Ryo Suzuki , Takuya Sakamoto , Yoshinobu Mori
IPC分类号： G06F19/00 , F02M51/00 , F02D41/30
CPC分类号： F02D41/107 , F02D41/047 , F02D41/18 , F02D41/2422 , F02D2200/0402 , F02D2200/0406
摘要： A method of estimating an air-intake amount of an internal combustion engine is provided. The method may comprise detecting a fluid energy amount in an interior of an air-intake passage at first and second points in time while an intake valve is closed from a compression stroke to an exhaust stroke, and calculating a predicted air-intake amount using the values of the fluid energy amounts at the first and second points with reference to an air-intake amount calculation map showing a correlation between the values of the fluid energy amounts at the first and second points and the predicted air-intake amount in the intake stroke, the air-intake amount calculation map being pre-created by finding the values of the fluid energy amounts in the air-intake passage at the first and second points and the air-intake amount, for plural running states of the internal combustion engine.
摘要翻译：提供了一种估计内燃机的进气量的方法。该方法可以包括在进气门从压缩冲程到排气冲程关闭的同时在第一和第二时间点检测进气通道的内部的流体能量，并且使用参考进气量计算图，第一点和第二点处的流体能量的值在第一和第二点处的流体能量的值与进气冲程中的预测空气进入量之间的相关性通过在内燃机的多个运转状态下，通过求出第一点和第二点处的进气通道中的流体能量值和进气量来预先创建进气量计算图。

60. 发明申请

US20100187661A1 Sintered Silicon Wafer 审中-公开
标题翻译：烧结硅片
公开(公告)号：US20100187661A1
公开(公告)日：2010-07-29
申请号：US12668307
申请日：2008-07-04
申请人： Ryo Suzuki , Hiroshi Takamura
发明人： Ryo Suzuki , Hiroshi Takamura
IPC分类号： H01L29/04
CPC分类号： C30B29/06 , C30B28/00 , H01L29/045
摘要： Provided is a sintered silicon wafer, wherein the ratio [I(220)/I(111) . . . (1)] of intensity of a (220) plane and intensity of a (111) plane measured by X-ray diffraction is 0.5 or more and 0.8 or less, and the ratio [I(311)/I(111) . . . (2)] of intensity of a (311) plane and intensity of a (111) plane is 0.3 or more and 0.5 or less. The provided sintered silicon wafer has a smooth surface in which its surface roughness is equivalent to a single crystal silicon.
摘要翻译：提供了一种烧结硅晶片，其中[I（220）/ I（111）]的比率。。。（220）面的强度的（1）]和通过X射线衍射测定的（111）面的强度为0.5以上且0.8以下，[I（311）/ I（111）]比。。。（311）面的强度和（111）面的强度的平均值（2）]为0.3以上且0.5以下。所提供的烧结硅晶片具有光滑表面，其表面粗糙度等同于单晶硅。

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