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51. 发明授权

US07943974B2 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy 有权
标题翻译：旋转MOS场效应晶体管和隧道磁阻效应元件使用具有Heusler合金的堆叠
公开(公告)号：US07943974B2
公开(公告)日：2011-05-17
申请号：US12662100
申请日：2010-03-31
申请人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L29/66984 , H01L43/08
摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
摘要翻译：自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。杂质扩散层形成在半导体层的表面区域中。（001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。

52. 发明申请

US20090057654A1 SPIN FET AND MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译： SPIN FET和磁性元件
公开(公告)号：US20090057654A1
公开(公告)日：2009-03-05
申请号：US12197710
申请日：2008-08-25
申请人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa
发明人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa
IPC分类号： H01L29/82 , G11B5/127
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3268 , H01L43/08
摘要： A spin FET of an aspect of the present invention includes source/drain regions, a channel region between the source/drain regions, and a gate electrode above the channel region. Each of the source/drain regions includes a stack structure which is comprised of a low work function material and a ferromagnet. The low work function material is a non-oxide which is comprised of one of Mg, K, Ca and Sc, or an alloy which includes the non-oxide of 50 at % or more.
摘要翻译：本发明的一个自旋FET包括源极/漏极区域，源极/漏极区域之间的沟道区域和沟道区域上方的栅极电极。源极/漏极区域中的每一个包括由低功函数材料和铁磁体组成的堆叠结构。低功函数材料是由Mg，K，Ca和Sc中的一种或包含50原子％以上的非氧化物的合金构成的非氧化物。

53. 发明申请

US20070164336A1 SPIN FET AND SPIN MEMORY 失效
标题翻译：旋转FET和旋转存储器
公开(公告)号：US20070164336A1
公开(公告)日：2007-07-19
申请号：US11610100
申请日：2006-12-13
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/66984 , G11C11/16 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
摘要翻译：根据本发明的示例的自旋FET包括其磁化方向固定的磁性钉扎层，其磁化方向改变的磁性自由层，磁性被钉扎层和磁性自由层之间的通道，设置在通过栅极绝缘层的沟道，以及设置在磁性自由层上的磁化方向由电场改变的多层。

54. 发明申请

US20060227465A1 Magneto-resistance effect element and magnetic memory 失效
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20060227465A1
公开(公告)日：2006-10-12
申请号：US11228326
申请日：2005-09-19
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译：可以减少自旋注入写入所需的电流。磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。

55. 发明授权

US08779496B2 Spin FET, magnetoresistive element and spin memory 失效
标题翻译：旋转FET，磁阻元件和自旋存储器
公开(公告)号：US08779496B2
公开(公告)日：2014-07-15
申请号：US12029117
申请日：2008-02-11
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/228 , H01L29/66984 , H01L29/7881 , H01L43/08
摘要： A spin FET includes a first ferromagnetic film disposed on a first source/drain area, a direction of magnetization thereof being fixed in an upward direction or a downward direction perpendicular to a film surface, a second ferromagnetic film disposed on a second source/drain area, a direction of magnetization thereof being changed in the upward direction or the downward direction, an anti-ferromagnetic ferroelectric film disposed on the second ferromagnetic film, and a tunnel barrier film disposed at least between the first source/drain area and the first ferromagnetic film or between the second source/drain and the second ferromagnetic film. Resistance of the anti-ferromagnetic ferroelectric film is larger than ON resistance when the first and second source/drain areas conduct electricity through the channel area.
摘要翻译：自旋FET包括设置在第一源/漏区上的第一铁磁膜，其磁化方向沿垂直于膜表面的向上方向或向下方向固定，第二铁磁膜设置在第二源/漏区其磁化方向在向上方向或向下方向上变化，设置在第二铁磁性膜上的反铁磁性铁电体膜和至少设置在第一源极/漏极区域与第一铁磁性膜之间的隧道势垒膜或者在第二源极/漏极和第二铁磁膜之间。当第一和第二源极/漏极区域通过沟道区域导电时，反铁磁铁电体膜的电阻大于导通电阻。

56. 发明授权

US07750390B2 Spin fet and spin memory 失效
标题翻译：旋转胎儿和旋转记忆
公开(公告)号：US07750390B2
公开(公告)日：2010-07-06
申请号：US11610100
申请日：2006-12-13
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/66984 , G11C11/16 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
摘要翻译：根据本发明的示例的自旋FET包括其磁化方向固定的磁性钉扎层，其磁化方向改变的磁性自由层，磁性被钉扎层和磁性自由层之间的通道，设置在通过栅极绝缘层的沟道，以及设置在磁性自由层上的磁化方向由电场改变的多层。

57. 发明申请

US20090050948A1 SPIN MOS FIELD EFFECT TRANSISTOR AND TUNNELING MAGNETORESISTIVE EFFECT ELEMENT USING STACK HAVING HEUSLER ALLOY 有权
标题翻译：旋转磁场效应晶体管和隧道电磁效应元件使用具有合金的堆叠
公开(公告)号：US20090050948A1
公开(公告)日：2009-02-26
申请号：US12194797
申请日：2008-08-20
申请人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/82 , G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L29/66984 , H01L43/08
摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
摘要翻译：自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。杂质扩散层形成在半导体层的表面区域中。（001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。

58. 发明授权

US07394684B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07394684B2
公开(公告)日：2008-07-01
申请号：US11373303
申请日：2006-03-13
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译：本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻元件，写入期间磁阻元件的硬磁化方向的磁场。

59. 发明申请

US20070223269A1 SPIN-INJECTION MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：旋转注射磁性随机存取存储器
公开(公告)号：US20070223269A1
公开(公告)日：2007-09-27
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/02
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

60. 发明申请

US20070177421A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20070177421A1
公开(公告)日：2007-08-02
申请号：US11608969
申请日：2006-12-11
申请人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
发明人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/933 , Y10S977/935
摘要： It is made possible to cause spin inversion at a low current density which does not cause element destruction and to conduct writing with a small current. A magnetoresistance effect element includes: a magnetization pinned layer in which magnetization direction is pinned; a magnetic recording layer in which magnetization direction is changeable, the magnetization direction in the magnetization pinned layer forming an angle which is greater than 0 degree and less than 180 degrees with a magnetization direction in the magnetic recording layer, and the magnetization direction in the magnetic recording layer being inverted by injecting spin-polarized electrons into the magnetic recording layer; and a non-magnetic metal layer provided between the magnetization pinned layer and the magnetic recording layer.
摘要翻译：可以在不会导致元件破坏并以小电流进行写入的低电流密度下引起自旋反转。磁阻效应元件包括：磁化固定层，其中磁化方向被钉扎; 磁化方向可变化的磁记录层，磁化钉扎层中的磁化方向形成大于0度且小于180度的磁化记录层中的磁化方向的磁化方向和磁记录层中的磁化方向记录层通过将自旋极化电子注入磁记录层而被反转; 以及设置在磁化被钉扎层和磁记录层之间的非磁性金属层。

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