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51. 发明授权

US07895731B2 Method for manufacturing magnetic field detecting element utilizing diffusion and migration of silver 有权
标题翻译：利用银的扩散和迁移制造磁场检测元件的方法
公开(公告)号：US07895731B2
公开(公告)日：2011-03-01
申请号：US11766926
申请日：2007-06-22
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Kei Hirata , Keita Kawamori
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Kei Hirata , Keita Kawamori
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F41/304 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49025 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A method for manufacturing a magnetic field detecting element having a free layer whose magnetization direction is variable depending on an external magnetic field and a pinned layer whose magnetization direction is fixed and these are stacked with an electrically conductive, nonmagnetic spacer layer sandwiched therebetween, wherein sense current flows in a direction perpendicular to film planes of the magnetic field detecting element. The method comprises: forming a spacer adjoining layer adjacent to the spacer layer, Heusler alloy layer, and a metal layer successively in this order; and forming either at least a part of the pinned layer or the free layer by heating the spacer adjoining layer, the Heusler alloy layer, and the metal layer. The spacer adjoining layer has a layer chiefly made of cobalt and iron. The Heusler alloy layer includes metal which is silver, gold, copper, palladium, or platinum, or an alloy thereof. The metal layer is made of the same.
摘要翻译：一种磁场检测元件的制造方法，该磁场检测元件具有磁化方向根据外部磁场而变化的自由层，其磁化方向固定的被钉扎层与夹在其间的导电非磁性间隔层堆叠，电流在垂直于磁场检测元件的膜平面的方向上流动。该方法包括：依次形成与间隔层相邻的间隔物邻接层，Heusler合金层和金属层; 以及通过加热间隔物邻接层，Heusler合金层和金属层来形成被钉扎层或自由层的至少一部分。间隔物邻接层具有主要由钴和铁制成的层。 Heusler合金层包括银，金，铜，钯或铂的金属或其合金。金属层由其制成。

52. 发明授权

US07894165B2 CCP magnetoresistive effect device with Fe barrier layers inhibiting diffusion of Co atoms to Heusler alloy layers in fixed layer and free layer, and head, head-gimbal assembly and hard disk system including said device 有权
标题翻译：具有Fe阻挡层的CCP磁阻效应器件抑制Co原子在固定层和自由层中的Heusler合金层的扩散，以及包括所述器件的头部，头部万向节组件和硬盘系统
公开(公告)号：US07894165B2
公开(公告)日：2011-02-22
申请号：US11762457
申请日：2007-06-13
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwiched between them, with a sense current applied in a stacking direction, wherein said free layer functions such that its magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a Heusler alloy layer, wherein an Fe layer is formed on one of both planes of said Heusler alloy layer in the stacking direction, wherein said one plane is near to at least a nonmagnetic spacer layer side, and said fixed magnetization layer is made up of a multilayer structure including a Heusler alloy layer, wherein Fe layers are formed on both plane sides of said Heusler alloy layer in the stacking direction with said Heusler alloy layer sandwiched between them. It is thus possible to prevent diffusion of Co atoms contained in the CoFe layer into the Heusler alloy layer, enabling the decrease in the spin polarizability of the Heusler alloy layer to be hold back and achieving a high MR ratio.
摘要翻译：本发明提供一种具有包含非磁性间隔层的CPP（电流垂直于平面）结构的磁阻效应器件，以及夹在它们之间的所述非磁性间隔层彼此堆叠的固定磁化层和自由层，具有感觉电流施加在层叠方向上，其中所述自由层的功能使得其磁化方向根据外部磁场而变化，并且由包括Heusler合金层的多层结构构成，其中在两个平面之一上形成Fe层的所述Heusler合金层，其中所述一个平面接近至少一个非磁性间隔层侧，并且所述固定磁化层由包括Heusler合金层的多层结构构成，其中在两者上形成Fe层所述Heusler合金层在层叠方向上的平面侧与所述Heusler合金层夹在它们之间。因此，可以防止CoFe层中所含的Co原子扩散到Heusler合金层中，能够抑制Heusler合金层的自旋极化率的降低并获得高的MR比。

53. 发明申请

US20090296283A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20090296283A1
公开(公告)日：2009-12-03
申请号：US12128352
申请日：2008-05-28
申请人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions. The first ferromagnetic layer and the second ferromagnetic layer are exchange coupled to the first shield layer and the second shield layer, respectively, by way of a first exchange coupling function gap layer and a second exchange coupling function gap layer, with an exchange coupled strength of 0.2 to 2.5 erg/cm2.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元以感测电流夹在它们之间沿堆叠方向施加。磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层夹在它们之间。第一屏蔽层和第二屏蔽层各自由磁化方向控制装置在磁化方向上控制，以产生它们的磁化处于相反方向的反平行磁化状态。第一铁磁层和第二铁磁层分别通过第一交换耦合功能间隙层和第二交换耦合功能间隙层交换耦合到第一屏蔽层和第二屏蔽层，交换耦合强度 0.2至2.5erg / cm2。

54. 发明授权

US07533456B2 Fabrication process for magneto-resistive effect devices of the CPP structure 失效
标题翻译： CPP结构的磁阻效应器件的制造工艺
公开(公告)号：US07533456B2
公开(公告)日：2009-05-19
申请号：US11757174
申请日：2007-06-01
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F41/183 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01L43/12 , Y10T29/49021 , Y10T29/49034 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.
摘要翻译：自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层彼此叠置，夹在它们之间的非磁性中间层。内销层由包括第二Heusler合金层的多层结构构成。第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。

55. 发明申请

US20080106827A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080106827A1
公开(公告)日：2008-05-08
申请号：US11931219
申请日：2007-10-31
申请人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/33
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/306 , H01L43/08
摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages: the semiconductor layer forming a part of the spacer layer can be so thicker than ever while keeping the area resistivity of the device low as desired, ever higher MR performance is achievable, and the variation of the area resistivity of the device can be substantially held back with much more improvements in film performance.
摘要翻译：本发明提供一种包括间隔层的CPP-GMR装置。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。因此，可以获得更多的改进的优点：形成间隔层的一部分的半导体层可以比以往更厚，同时保持器件的面积电阻率低，可以实现更高的MR性能，并且变化可以基本上阻止装置的面积电阻率，同时具有更多的薄膜性能的改进。

56. 发明申请

US20070274010A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 有权
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070274010A1
公开(公告)日：2007-11-29
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

57. 发明授权

US07826180B2 Magneto-resistive effect device of the CPP structure, and magnetic disk system 有权
标题翻译： CPP结构的磁阻效应器，磁盘系统
公开(公告)号：US07826180B2
公开(公告)日：2010-11-02
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

58. 发明申请

US20090002893A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP结构和磁盘系统的磁阻效应器件
公开(公告)号：US20090002893A1
公开(公告)日：2009-01-01
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/33 , G11B5/147 , G11B5/48
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨型磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

59. 发明申请

US20090274837A1 METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE 审中-公开
标题翻译：生产CPP型磁性装置的方法
公开(公告)号：US20090274837A1
公开(公告)日：2009-11-05
申请号：US12112598
申请日：2008-04-30
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3903 , H01L43/12
摘要： The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability.
摘要翻译：本发明提供一种用于形成磁阻器件的传感器位置的方法，其中依次形成第一铁磁层和非磁性中间层，然后对非磁性中间层的表面进行表面处理，之后将第二铁磁体层在非磁性中间层的如此处理的表面上形成铁磁层。表面处理通过使用真空使修饰元件在非磁性中间层的表面上正确敲击的方法来实现。非磁性中间层主要由氧化物或氮化物构成，改性元素为熔点为500℃以下的低熔点元素。因此，可以减少旋转散射，同时减少用于传感器部位的铁磁层的表面的氧化或氮化，由此实现高MR变化率。 MR变化率的有限分散也具有极高的可靠性。

60. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

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