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51. 发明授权

US07897412B2 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US07897412B2
公开(公告)日：2011-03-01
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

52. 发明授权

US07740738B2 Inductively coupled antenna and plasma processing apparatus using the same 有权
标题翻译：电感耦合天线和使用其的等离子体处理装置
公开(公告)号：US07740738B2
公开(公告)日：2010-06-22
申请号：US10748277
申请日：2003-12-31
申请人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
发明人： Tae-wan Kim , Yuri Nikolaevich Tolmachev , Dong-joon Ma
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reaction chamber and for generating plasma includes a coil having a plurality of turns including an outermost turn and a plurality of inner turns, wherein a current flowing through the outermost turn is larger than a current flowing through the plurality of inner turns. The outermost turn and the inner turns are connected to the RF power supply in parallel and the inner turns are connected to each other in series. The inductively coupled antenna further includes a conductive metal tube that has a cooling path and a conductive metal strip that is electrically and thermally connected to a lower portion of the metal tube.
摘要翻译：一种电感耦合天线，用于安装在电感耦合等离子体（ICP）处理装置的反应室上，并用于连接到射频（RF）电源，以诱发用于电离注入反应室的反应气体的电场并产生等离子体包括具有多个匝的线圈，其包括最外匝和多匝，其中流过最外匝的电流大于流过多个内匝的电流。最外圈和内圈与RF电源并联连接，内圈相互串联连接。电感耦合天线还包括导电金属管，该导电金属管具有电连接和热连接到金属管的下部的导电金属带。

53. 发明申请

US20090067233A1 Magnetic random access memory and method of reading data from the same 有权
标题翻译：磁性随机存取存储器和从其读取数据的方法
公开(公告)号：US20090067233A1
公开(公告)日：2009-03-12
申请号：US12230855
申请日：2008-09-05
申请人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
发明人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
IPC分类号： G11C11/14 , G11C7/14 , G11C11/409
CPC分类号： G11C7/14 , G11C7/062 , G11C11/1659 , G11C11/1673
摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.
摘要翻译：磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

54. 发明授权

US07477539B2 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US07477539B2
公开(公告)日：2009-01-13
申请号：US11657646
申请日：2007-01-25
申请人： Kae-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kae-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

55. 发明授权

US07439770B2 Magnetic tunneling junction based logic circuits and methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路及其操作方法
公开(公告)号：US07439770B2
公开(公告)日：2008-10-21
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： H03K19/21
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

56. 发明授权

US07399336B2 Non-magnetic nickel powders and method for preparing the same 失效
标题翻译：非磁性镍粉及其制备方法
公开(公告)号：US07399336B2
公开(公告)日：2008-07-15
申请号：US11393691
申请日：2006-03-31
申请人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
发明人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
IPC分类号： B22F1/00
CPC分类号： B22F1/0085 , B22F2999/00 , B82Y25/00 , H01F1/14733 , H01M4/52 , Y10S977/777 , B22F1/0022
摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.
摘要翻译：提供非磁性镍粉末及其制备方法。镍粉具有非磁性和HCP晶体结构。该方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，（b）加热原料分散液，将FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。镍粉不显示磁性聚集现象。因此，含有本发明的镍粉末的各种电子器件中的内部电极形成用糊料可以保持良好的分散状态。此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

57. 发明授权

US07378716B2 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same 有权
标题翻译：磁性隧道结电池具有具有低磁矩的自由磁性层和具有该磁性随机存取存储器的磁性随机存取存储器
公开(公告)号：US07378716B2
公开(公告)日：2008-05-27
申请号：US10987185
申请日：2004-11-15
申请人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
发明人： Tae-wan Kim , Sang-jin Park , In-jun Hwang
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/135 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
摘要翻译：磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

58. 发明申请

US20080118993A1 Method of manufacturing magnetic random access memory (MRAM) 审中-公开
标题翻译：制造磁性随机存取存储器（MRAM）的方法
公开(公告)号：US20080118993A1
公开(公告)日：2008-05-22
申请号：US12000156
申请日：2007-12-10
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

59. 发明申请

US20060139992A1 MAGNETIC MEMORY DEVICE AND METHOD 有权
公开(公告)号：US20060139992A1
公开(公告)日：2006-06-29
申请号：US11164579
申请日：2005-11-29
申请人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
发明人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
IPC分类号： G11C11/14 , G11C11/15
CPC分类号： G11C11/15
摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

60. 发明授权

US07061034B2 Magnetic random access memory including middle oxide layer and method of manufacturing the same 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器及其制造方法
公开(公告)号：US07061034B2
公开(公告)日：2006-06-13
申请号：US10830119
申请日：2004-04-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

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