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51. 发明授权

US4841536A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US4841536A
公开(公告)日：1989-06-20
申请号：US850685
申请日：1986-04-11
申请人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
发明人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.
摘要翻译：本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

52. 发明授权

US4832430A Optical switch 失效
标题翻译：光开关
公开(公告)号：US4832430A
公开(公告)日：1989-05-23
申请号：US8371
申请日：1987-01-29
申请人： Kunio Tada , Yoshitaka Okada , Hiroaki Inoue , Hiroyoshi Matsumura
发明人： Kunio Tada , Yoshitaka Okada , Hiroaki Inoue , Hiroyoshi Matsumura
IPC分类号： H01L27/15 , G02F1/31 , G02F1/313
CPC分类号： G02F1/3138
摘要： Electrodes are provided in the vicinity of the switching region of a carrier injection type optical switch, and carriers are removed rapidly through these electrodes when the switch is turned OFF. As the result, a switching speed is increased.
摘要翻译：电极设置在载流子注入型光开关的切换区域附近，并且当开关断开时，载流子通过这些电极被快速地去除。结果，切换速度增加。

53. 发明授权

US4737003A Optical switching device utilizing multiple quantum well structures between intersecting waveguides 失效
标题翻译：在交叉波导之间利用多个量子阱结构的光学开关器件
公开(公告)号：US4737003A
公开(公告)日：1988-04-12
申请号：US684784
申请日：1984-12-21
申请人： Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
发明人： Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
IPC分类号： G02F1/295 , G02F1/31 , G02F1/313 , G02F1/315 , G02B6/10 , G02F1/01 , H01L27/12
CPC分类号： G02F1/315 , G02F1/3138
摘要： An optical switch wherein a stripe layer of a compound semiconductor whose refractive index is changed by changing a carrier concentration thereof is disposed so as to cut off both optical waveguides at a position of a longer diagonal line of an intersection portion between the optical waveguides formed on a substrate of a compound semiconductor and intersecting each other at a predetermined angle, and the refractive index is changed by causing current to flow to the stripe layer.
摘要翻译：一种光学开关，其中折射率通过改变载流子浓度而改变的化合物半导体的条纹层被设置成在形成在其上的光波导之间的交叉部分的较长对角线的位置处切断两个光波导化合物半导体的基板，以预定的角度彼此交叉，并且通过使电流流向条纹层来改变折射率。

54. 发明授权

US4730896A Member for infrared ray transmission 失效
标题翻译：会员红外线传输
公开(公告)号：US4730896A
公开(公告)日：1988-03-15
申请号：US799974
申请日：1985-11-20
申请人： Toshio Katsuyama , Hiroyoshi Matsumura
发明人： Toshio Katsuyama , Hiroyoshi Matsumura
IPC分类号： C03C3/32 , C03C4/10 , C03C13/04 , G02B6/10 , G02B6/00 , F21V9/04
CPC分类号： C03C4/10 , C03C3/321 , G02B6/102 , Y10S501/904
摘要： A member capable of transmitting infrared rays of 2 .mu.m or longer in wavelength, particularly of 10.6 .mu.m in wavelength, with a slight loss is provided. The member comprises a Ge-Se-Te ternary chalcogenide glass having a composition which, in a compositional diagram of the ternary chalcogenide glass falls within the region bounded by the respective straight lines connecting points A, B, C, D, and E and A in this order, which points A, B, C, D, and E indicate Ge:Se:Te molar proportions of 32:25:43, 20:6:74, 15:5:80, 15:10:75, and 22:31:47, respectively.
摘要翻译：提供能够以轻微损失发送波长为2μm或更长波长的红外线，特别是10.6μm波长的红外线的部件。该构件包括Ge-Se-Te三元硫族化物玻璃，其组成在三元硫族化物玻璃的组成图中落在由连接点A，B，C，D和E和A的各直线界定的区域内按照这个顺序，A，B，C，D和E分别表示Ge:Se:Te摩尔比为32:25:43,20:6:74,15:5:80,15:10:75，和 22:31:47。

55. 发明授权

US4426129A Optical fiber and method of producing the same 失效
标题翻译：光纤及其制造方法
公开(公告)号：US4426129A
公开(公告)日：1984-01-17
申请号：US223747
申请日：1981-01-09
申请人： Hiroyoshi Matsumura , Toshio Katsuyama , Tsuneo Suganuma
发明人： Hiroyoshi Matsumura , Toshio Katsuyama , Tsuneo Suganuma
IPC分类号： C03B37/012 , C03B37/018 , C03C13/04 , G02B6/10 , G02B5/14 , C03B19/00
CPC分类号： G02B6/105 , C03B37/01217 , C03B37/018 , C03B37/01861 , C03C13/045 , C03B2201/10 , C03B2203/10 , C03B2203/12 , C03B2203/22 , C03B2203/30
摘要： A glass layer is formed inside a silica glass tube and another glass layer having a refractive index higher than that of the abovementioned glass layer is formed on said glass layer. After these glass layers are formed, one end of the glass tube is collapsed. While the internal pressure of the glass tube is being reduced below the atmospheric pressure, the glass tube is caused to collapse by heating, thereby yielding a preform for an optical fiber. The optical fiber produced from this preform has the difference in the refractive indices of the two orthogonal major axes of at least 1.6.times.10.sup.-4 and maintains the linear polarization plane.
摘要翻译：在石英玻璃管内形成玻璃层，在玻璃层上形成折射率高于上述玻璃层的玻璃层。在形成这些玻璃层之后，玻璃管的一端收缩。当玻璃管的内部压力降低到低于大气压力时，玻璃管通过加热而塌陷，从而产生用于光纤的预成型件。由该预成型件制造的光纤具有至少1.6×10 -4的两个正交长轴的折射率差并保持线偏振面。

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