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51. 发明授权

US07872351B2 Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same 失效
标题翻译：用于防止金属线之间扩散的半导体器件的多层金属线及其形成方法
公开(公告)号：US07872351B2
公开(公告)日：2011-01-18
申请号：US12607267
申请日：2009-10-28
申请人： Jeong Tae Kim , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Dong Ha Jung
发明人： Jeong Tae Kim , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Dong Ha Jung
IPC分类号： H01L23/522 , H01L23/528 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76856 , H01L23/5226 , H01L23/53214 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern.
摘要翻译：半导体器件的多层金属线包括半导体衬底; 形成在半导体衬底上并在其表面上凹陷的下金属线; 形成在所述半导体衬底上的绝缘层，所述绝缘层包括所述下金属线并且具有用于暴露所述下金属线的凹陷部分并限定上金属线形成区域的镶嵌图案; 形成在下金属线的凹部的表面上的胶层; 形成在所述胶层上以填充所述下金属线的凹部的第一扩散阻挡层; 形成在所述胶层和所述第一扩散阻挡层上的第二扩散阻挡层; 形成在所述第二扩散阻挡层上的第三扩散阻挡层和所述镶嵌图案的表面; 以及形成在第三扩散阻挡层上以填充镶嵌图案的上金属线。

52. 发明申请

US20100065074A1 Lighter And Cigar Splitter Apparatus 有权
标题翻译：打火机和雪茄分配器
公开(公告)号：US20100065074A1
公开(公告)日：2010-03-18
申请号：US12260090
申请日：2008-10-29
申请人： Young Jin Lee , Young Min Lee
发明人： Young Jin Lee , Young Min Lee
IPC分类号： A24F13/24
CPC分类号： A24F13/24 , A44B15/00
摘要： A cigar splitter comprises: a housing having two open ends, an inside wall and outside surface, and a long axis, wherein the open ends are in line with each other permitting a cigar to be inserted through one end and out the other. A blade is attached to the inside of the housing, the blade oriented for cutting an outer sheath of the cigar as the cigar is inserted through one end of the splitter housing and out the other end. An apparatus for lighting and splitting a cigar comprising a cigar splitter as described above and can maintain active and inactive configurations of the splitter for safety of the user.
摘要翻译：一种雪茄分离器包括：具有两个开口端，内壁和外表面以及长轴的壳体，其中开口端彼此成一直线，允许一根雪茄通过一端插入另一端。叶片附接到壳体的内部，当雪茄通过分离器壳体的一端插入并另一端插入时，刀片被定向成用于切割雪茄的外护套。一种用于照明和分割包括如上所述的雪茄分离器的雪茄的装置，并且可以维护用户的安全性的分离器的主动和非活动配置。

53. 发明申请

US20100047949A1 STACK TYPE SURFACE ACOUSTIC WAVE PACKAGE, AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：堆叠式表面声波包装及其制造方法
公开(公告)号：US20100047949A1
公开(公告)日：2010-02-25
申请号：US12546142
申请日：2009-08-24
申请人： Seung Hee Lee , Doo Cheol Park , Joo Hun Park , Young Jin Lee , Sang Wook Park , Nam Hyeong Kim
发明人： Seung Hee Lee , Doo Cheol Park , Joo Hun Park , Young Jin Lee , Sang Wook Park , Nam Hyeong Kim
IPC分类号： H01L21/50
CPC分类号： H03H9/1085 , H01L24/97 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/48091 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/3025 , H03H3/08 , H03H9/059 , H03H9/1078 , H01L2224/81 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Disclosed herein is a stack type surface acoustic wave package. The surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips. The surface acoustic wave package can prevent deformation due to thermal impact from the outside during a packaging process, enhancing reliability of the product, minimizing the size of the product, and reducing manufacturing costs by reducing the number of components and material costs.
摘要翻译：这里公开了一种堆叠型表面声波封装。表面声波封装包括具有形成在其上的多个电极的第一裸芯片，具有形成在其上的多个电极和通孔的第二裸芯片，将第一裸芯片电连接到第二裸芯片的上表面的连接部分裸芯片，使得第一裸芯片的电极面对第二裸芯片的电极;以及密封构件，设置在第一裸芯片和第二裸芯片上，以在第一和第二裸芯片之间的操作表面上形成气密空间。表面声波封装可以防止在包装过程中由于外界的热冲击而引起的变形，提高产品的可靠性，最小化产品尺寸，并通过减少部件数量和材料成本降低制造成本。

54. 发明申请

US20090322241A1 AC DRIVEN LIGHT EMITTING DEVICE 有权
标题翻译：交流驱动发光装置
公开(公告)号：US20090322241A1
公开(公告)日：2009-12-31
申请号：US12265357
申请日：2008-11-05
申请人： Grigory Onushkin , Gil Han Park , Jung Ja Yang , Young Jin Lee
发明人： Grigory Onushkin , Gil Han Park , Jung Ja Yang , Young Jin Lee
IPC分类号： H05B37/00
CPC分类号： H01L27/156 , F21K9/00 , H01L33/62 , H01L2224/49107 , H05B33/0821 , H01L2224/48091 , H01L2924/00014
摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.
摘要翻译：交流（AC）驱动的发光器件包括基板，K个在基板的顶表面上排列成一行的第一发光二极管（LED）单元，其中K是满足K> = 3的整数，K数的第二LED单元排列成与所述基板的上表面上的所述第一LED单元的行平行的行，以及在所述第一和第二LED的各行之间排列成行的第（K-1）个第三LED单元，在基底的顶表面上的细胞。交流驱动发光器件具有可在AC工作的LED电池之间的连接结构。

55. 发明申请

US20090186456A1 Method of Manufacturing Semiconductor Device using Salicide Process 失效
标题翻译：使用杀菌剂工艺制造半导体器件的方法
公开(公告)号：US20090186456A1
公开(公告)日：2009-07-23
申请号：US12346011
申请日：2008-12-30
申请人： Young Jin Lee , Dong Sun Sheen , Seok Pyo Song , Mi Ri Lee , Chi Ho Kim , Gil Jae Park , Bo Min Seo
发明人： Young Jin Lee , Dong Sun Sheen , Seok Pyo Song , Mi Ri Lee , Chi Ho Kim , Gil Jae Park , Bo Min Seo
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/823425 , H01L21/823835
摘要： A method for manufacturing a semiconductor device using a salicide process, which includes forming a gate dielectric layer over a silicon substrate including a PMOS region and an NMOS region; forming a first silicon pattern in the NMOS region and a second silicon pattern in the PMOS region; forming a first metal layer that is in contact with the first silicon pattern and the exposed first portion of the silicon substrate; and forming a first gate, a first junction, a second gate, and a second junction by performing a heat treatment to silicify the respective first and second silicon patterns and the silicon substrate.
摘要翻译：一种使用自对准硅化物工艺制造半导体器件的方法，包括在包括PMOS区域和NMOS区域的硅衬底上形成栅极电介质层; 在所述NMOS区域中形成第一硅图案和在所述PMOS区域中形成第二硅图案; 形成与所述第一硅图案和所述暴露的所述硅衬底的第一部分接触的第一金属层; 以及通过进行热处理以使相应的第一和第二硅图案和硅衬底硅化而形成第一栅极，第一结，第二栅极和第二结。

56. 发明授权

US07541269B2 Method of forming tungsten polymetal gate having low resistance 失效
标题翻译：具有低电阻的钨多金属门形成方法
公开(公告)号：US07541269B2
公开(公告)日：2009-06-02
申请号：US11693137
申请日：2007-03-29
申请人： Soo Hyun Kim , Noh Jung Kwak , Baek Mann Kim , Young Jin Lee , Sun Woo Hwang , Kwan Yong Lim
发明人： Soo Hyun Kim , Noh Jung Kwak , Baek Mann Kim , Young Jin Lee , Sun Woo Hwang , Kwan Yong Lim
IPC分类号： H01L21/4763
CPC分类号： H01L21/28061 , H01L29/4941
摘要： A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.
摘要翻译：通过在半导体衬底上形成栅极绝缘层和多晶硅层来制造钨多金属栅极; 在所述多晶硅层上沉积阻挡层; 通过ALD工艺在阻挡层上沉积钨成核层; 通过CVD工艺在钨成核层上沉积钨层; 在钨层上沉积硬掩模层; 并且蚀刻硬掩模层，钨层，钨成核层，势垒层，多晶硅层和栅极绝缘层。

57. 发明授权

US07524761B2 Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance 失效
标题翻译：能够减少寄生位线电容的半导体器件的制造方法
公开(公告)号：US07524761B2
公开(公告)日：2009-04-28
申请号：US11776905
申请日：2007-07-12
申请人： Soo Hyun Kim , Baek Mann Kim , Young Jin Lee , Sun Woo Hwang , Dong Ha Jung , Jeong Tae Kim
发明人： Soo Hyun Kim , Baek Mann Kim , Young Jin Lee , Sun Woo Hwang , Dong Ha Jung , Jeong Tae Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/76826 , H01L21/76838 , H01L27/10885 , H01L27/10888
摘要： A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer insulation film including a surface of the hole; forming a first metal film over the barrier film so as to fill in the hole; forming a bit line contact plug in the hole by removing the first metal film and the barrier film so as to expose the interlayer insulation film; carrying out a gas treatment to a surface of the interlayer insulation film including the bit line contact plug so as to promote a growth of metal nucleation; forming a second metal film over the gas treated interlayer insulation film; and forming a bit line in contact with the bit line contact plug by etching the second metal film.
摘要翻译：半导体存储器件通过：通过蚀刻形成在半导体衬底上的层间绝缘膜来形成孔; 在包括所述孔的表面的所述层间绝缘膜上形成阻挡膜; 在所述阻挡膜上形成第一金属膜以填充所述孔; 通过去除第一金属膜和阻挡膜以形成层间绝缘膜，从而在孔中形成位线接触插塞; 对包含位线接触插塞的层间绝缘膜的表面进行气体处理，以促进金属成核的生长; 在气体处理的层间绝缘膜上形成第二金属膜; 并通过蚀刻第二金属膜形成与位线接触插塞接触的位线。

58. 发明申请

US20080157369A1 MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME 失效
标题翻译：用于防止金属线之间的扩散的半导体器件的多层金属线及其形成方法
公开(公告)号：US20080157369A1
公开(公告)日：2008-07-03
申请号：US11755852
申请日：2007-05-31
申请人： Jeong Tae Kim , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Dong Ha Jung
发明人： Jeong Tae Kim , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Dong Ha Jung
IPC分类号： H01L23/52 , H01L21/3205
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76856 , H01L23/5226 , H01L23/53214 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern.
摘要翻译：半导体器件的多层金属线包括半导体衬底; 形成在半导体衬底上并在其表面上凹陷的下金属线; 形成在所述半导体衬底上的绝缘层，所述绝缘层包括所述下金属线并且具有用于暴露所述下金属线的凹陷部分并限定上金属线形成区域的镶嵌图案; 形成在下金属线的凹部的表面上的胶层; 形成在所述胶层上以填充所述下金属线的凹部的第一扩散阻挡层; 形成在所述胶层和所述第一扩散阻挡层上的第二扩散阻挡层; 形成在所述第二扩散阻挡层上的第三扩散阻挡层和所述镶嵌图案的表面; 以及形成在第三扩散阻挡层上以填充镶嵌图案的上金属线。

59. 外观设计

USD518667S1 Television rack 有权
标题翻译：电视架
公开(公告)号：USD518667S1
公开(公告)日：2006-04-11
申请号：US29217560
申请日：2004-11-19
申请人： Sung Gu Joe , Seh Dong Yoo , Seung Ho Oh , Young Jin Lee
设计人： Sung Gu Joe , Seh Dong Yoo , Seung Ho Oh , Young Jin Lee

60. 发明授权

US08754578B2 AC driven light emitting device connection structure 有权
标题翻译：交流驱动发光装置连接结构
公开(公告)号：US08754578B2
公开(公告)日：2014-06-17
申请号：US13482781
申请日：2012-05-29
申请人： Grigory Onushkin , Gil Han Park , Jung Ja Yang , Young Jin Lee
发明人： Grigory Onushkin , Gil Han Park , Jung Ja Yang , Young Jin Lee
IPC分类号： H05B33/02 , H01L27/15
CPC分类号： H01L27/156 , F21K9/00 , H01L33/62 , H01L2224/49107 , H05B33/0821 , H01L2224/48091 , H01L2924/00014
摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.
摘要翻译：交流（AC）驱动的发光器件包括基板，K个在衬底的顶表面上排列成一排的第一发光二极管（LED）单元，其中K是满足K≥3的整数，K数在所述基板的上表面上与所述第一LED单元的行平行配置的第二LED单元，以及在所述第一和第二LED单元的各行之间排列成行的第（K-1）个第三LED单元，在基板的顶表面上。交流驱动发光器件具有可在AC工作的LED电池之间的连接结构。

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