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51. 发明申请

US20140030843A1 OHMIC CONTACT OF THIN FILM SOLAR CELL 审中-公开
标题翻译：薄膜太阳能电池的OHMIC接触
公开(公告)号：US20140030843A1
公开(公告)日：2014-01-30
申请号：US13558383
申请日：2012-07-26
申请人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw
发明人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw
IPC分类号： H01L31/0264 , B82Y40/00
CPC分类号： H01L31/022441 , B82Y30/00 , H01L31/022425 , H01L31/032 , H01L31/0322 , H01L31/0326 , H01L31/03923 , H01L31/0749 , Y02E10/541
摘要： A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.
摘要翻译：包含碳纳米管层和高功函数材料层中的至少一种的耐硫属材料沉积在基板上的过渡金属层上。半导体硫族化物/凯斯特石材料层沉积在抗硫属材料上。碳纳米管（如果存在）可以通过提供从过渡金属层通过硫属元素抵抗材料和半导体硫族化物材料的直接导电路径来降低接触电阻。如果存在高功函数材料层，则可以通过减少过渡金属层中的过渡金属的硫族化来降低接触电阻。降低接触电阻可以提高包括硫族化物半导体材料的太阳能电池的效率。

52. 发明授权

US08637849B2 Vertical nanowire FET devices 有权
标题翻译：垂直纳米线FET器件
公开(公告)号：US08637849B2
公开(公告)日：2014-01-28
申请号：US12984653
申请日：2011-01-05
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02521 , H01L21/02628 , H01L21/02639 , H01L29/0676 , H01L29/42392 , H01L29/66742 , H01L29/775 , H01L29/78642
摘要： A Vertical Field Effect Transistor (VFET) formed on a substrate, with a conductive bottom electrode formed thereon. A bottom dielectric spacer layer and a gate dielectric layer surrounded by a gate electrode are formed thereabove. Thereabove is an upper spacer layer. A pore extends therethrough between the electrodes. A columnar Vertical Semiconductor Nanowire (VSN) fills the pore and between the top and bottom electrodes. An FET channel is formed in a central region of the VSN between doped source and drain regions at opposite ends of the VSN. The gate dielectric structure, that is formed on an exterior surface of the VSN above the bottom dielectric spacer layer, separates the VSN from the gate electrode.
摘要翻译：形成在衬底上的垂直场效应晶体管（VFET），其上形成有导电底电极。在其上方形成由栅电极包围的底部电介质隔离层和栅介质层。以上是上隔离层。孔在电极之间延伸穿过。柱状垂直半导体纳米线（VSN）填充孔和顶部和底部电极之间。在VSN的相对端处的掺杂源极和漏极区域之间的VSN的中心区域中形成FET沟道。在底部电介质间隔层上方的VSN的外表面上形成的栅极电介质结构将VSN与栅电极分离。

53. 发明授权

US08427780B2 Planar magnetic writer having offset portions 有权
标题翻译：具有偏移部分的平面磁性写入器
公开(公告)号：US08427780B2
公开(公告)日：2013-04-23
申请号：US12358503
申请日：2009-01-23
申请人： Robert Glenn Biskeborn , Lubomyr T. Romankiw , Steven Erik Steen , Bucknell Chapman Webb
发明人： Robert Glenn Biskeborn , Lubomyr T. Romankiw , Steven Erik Steen , Bucknell Chapman Webb
IPC分类号： G11B5/17
CPC分类号： G11B5/29 , G11B5/1272 , G11B5/17 , G11B5/1871
摘要： A magnetic head in one embodiment includes a bottom pole; a top pole positioned above a plane extending through the bottom pole and parallel to a plane of deposition of the bottom pole, wherein the top pole is at least partially offset from the bottom pole in a direction parallel to a plane of deposition of the top pole; a first write gap in the top pole; and a first coil for generating a magnetic flux across the first write gap. A method in one embodiment includes forming a bottom pole; forming a top pole above a plane extending through the bottom pole and parallel to a plane of deposition of the bottom pole, wherein the top pole is at least partially offset from the bottom pole in a direction parallel to a plane of deposition of the top pole, wherein at least one write gap is formed in the top pole; forming side poles for coupling the top and bottom poles; and forming a first coil for generating a magnetic flux across the first write gap.
摘要翻译：一个实施例中的磁头包括底极; 位于平面延伸穿过底极并平行于底极沉积平面的平面上方的顶极，其中顶极在平行于顶极沉积平面的方向上至少部分地偏离底极 ; 顶极的第一个写入间隙; 以及用于在所述第一写入间隙上产生磁通量的第一线圈。一个实施例中的方法包括形成底极; 在平行于所述底极的平面的平面上形成顶极，并且平行于所述底极的沉积平面，其中所述顶极至少部分地偏离所述底极，所述方向平行于所述顶极的沉积平面，其中在所述顶极中形成至少一个写入间隙; 形成用于联接顶极和底极的侧极; 以及形成用于在所述第一写入间隙上产生磁通量的第一线圈。

54. 发明申请

US20130074915A1 METHOD OF FABRICATING A FLEXIBLE PHOTOVOLTAIC FILM CELL WITH AN IRON DIFFUSION BARRIER LAYER 有权
标题翻译：利用铁扩散障碍层制作柔性光伏电池的方法
公开(公告)号：US20130074915A1
公开(公告)日：2013-03-28
申请号：US13245016
申请日：2011-09-26
申请人： Hariklia Deligianni , Lian Guo , Marinus Johannes Petrus Hopstaken , Maurice Mason , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Lian Guo , Marinus Johannes Petrus Hopstaken , Maurice Mason , Lubomyr T. Romankiw
IPC分类号： H01L31/0264 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/0322 , H01L31/03928 , H01L31/0749 , Y02E10/541
摘要： A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.
摘要翻译：一种制造具有铁扩散阻挡层的柔性光伏电池的方法。该方法包括：提供包括铁的箔基板; 在所述箔基板上形成铁扩散阻挡层，其中所述铁扩散阻挡层防止所述铁扩散; 在铁扩散阻挡层上形成电极层; 以及在所述电极层上形成至少一个光吸收层。还提供了一种柔性光伏电池，该电池包括：包含铁的箔基材; 形成在所述箔基板上以防止铁扩散的铁扩散阻挡层; 形成在铁扩散阻挡层上的电极层; 以及形成在电极层上的至少一个光吸收层。

55. 发明申请

US20130008798A1 ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES 审中-公开
标题翻译：镓和镓合金膜的电沉积方法和相关的光伏结构
公开(公告)号：US20130008798A1
公开(公告)日：2013-01-10
申请号：US13604054
申请日：2012-09-05
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D5/10 , C25D5/50 , C25D5/48
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.
摘要翻译：用于制备p型半导体的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了形成镓或镓合金的热界面的方法。

56. 发明授权

US07659200B2 Self-constrained anisotropic germanium nanostructure from electroplating 失效
标题翻译：电镀自限制各向异性锗纳米结构
公开(公告)号：US07659200B2
公开(公告)日：2010-02-09
申请号：US11620391
申请日：2007-01-05
申请人： Guy Cohen , Qiang Huang , Lubomyr T. Romankiw , Hariklia Deligianni
发明人： Guy Cohen , Qiang Huang , Lubomyr T. Romankiw , Hariklia Deligianni
IPC分类号： H01L21/302
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译：提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

57. 发明申请

US20090301890A1 FORMATION OF NANOSTRUCTURES COMPRISING COMPOSITIONALLY MODULATED FERROMAGNETIC LAYERS BY PULSED ECD 审中-公开
标题翻译：通过脉冲ECD形成包含组成调节性FERROMAGNETIC层的纳米结构
公开(公告)号：US20090301890A1
公开(公告)日：2009-12-10
申请号：US12540710
申请日：2009-08-13
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： C25D5/02 , C25D5/18
CPC分类号： C25D5/022 , B82Y25/00 , C25D3/562 , C25D5/10 , C25D5/18 , H01F1/0072 , H01F41/26 , Y10S977/762 , Y10S977/81 , Y10S977/838 , Y10T428/12028 , Y10T428/12465 , Y10T428/12493 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951 , Y10T428/12986 , Y10T428/24967 , Y10T428/2982
摘要： The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.
摘要翻译：本发明涉及一种用于形成包含不同材料组成的交替的第一和第二铁磁层的结构的方法。首先形成含有具有至少一个开放孔的支撑基体和导电性基底层的基板。然后在含有至少一种铁磁金属元素和一种或多种另外不同的金属元素的电镀溶液中进行基底的电镀。具有交替的高电位和低电位的脉冲电流被施加到衬底结构的导电基底层，从而在支撑矩阵的开孔中形成不同材料组成的交替铁磁层。

58. 发明申请

US20080166584A1 FORMATION OF NANOSTRUCTURES COMPRISING COMPOSITIONALLY MODULATED FERROMAGNETIC LAYERS BY PULSED ECD 有权
标题翻译：通过脉冲ECD形成包含组成调节性FERROMAGNETIC层的纳米结构
公开(公告)号：US20080166584A1
公开(公告)日：2008-07-10
申请号：US11620480
申请日：2007-01-05
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01F1/00 , C25D5/02 , B32B7/02
CPC分类号： C25D5/022 , B82Y25/00 , C25D3/562 , C25D5/10 , C25D5/18 , H01F1/0072 , H01F41/26 , Y10S977/762 , Y10S977/81 , Y10S977/838 , Y10T428/12028 , Y10T428/12465 , Y10T428/12493 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951 , Y10T428/12986 , Y10T428/24967 , Y10T428/2982
摘要： The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.
摘要翻译：本发明涉及一种用于形成包含不同材料组成的交替的第一和第二铁磁层的结构的方法。首先形成含有具有至少一个开放孔的支撑基体和导电性基底层的基板。然后在含有至少一种铁磁金属元素和一种或多种另外不同的金属元素的电镀溶液中进行基底的电镀。具有交替的高电位和低电位的脉冲电流被施加到衬底结构的导电基底层，从而在支撑矩阵的开孔中形成不同材料组成的交替铁磁层。

59. 发明授权

US5312532A Multi-compartment eletroplating system 失效
标题翻译：多室电镀系统
公开(公告)号：US5312532A
公开(公告)日：1994-05-17
申请号：US6070
申请日：1993-01-15
申请人： Panayotis Andricacos , Moritz Branger , Robert M. Browne , John O. Dukovic , Benjamin W. B. Fu , Robert W. Hitzfeld , Matteo Flotta , Donald R. McKenna , Lubomyr T. Romankiw , Saeed Sahami
发明人： Panayotis Andricacos , Moritz Branger , Robert M. Browne , John O. Dukovic , Benjamin W. B. Fu , Robert W. Hitzfeld , Matteo Flotta , Donald R. McKenna , Lubomyr T. Romankiw , Saeed Sahami
IPC分类号： C25D17/00 , C25D7/12 , C25D17/10 , C25D19/00 , C25D21/00 , C25D21/10 , G11B5/31 , C25D17/02 , C25D21/12
CPC分类号： C25D21/10 , C25D17/10 , G11B5/3163 , Y10S204/07
摘要： A multi-compartment electroplating system for electroplating two or more objects simultaneously such that the electrodeposited material is substantially uniform in thickness and composition. Electroplating solution is circulated between a reservoir and a multi-compartment tank which has one cathode-paddle-anode (CPA) assembly for each compartment. Each CPA assembly has an anode, a cathode adapted for holding a wafer and employing a single thieving electrode which covers all of the floor of the compartment not covered by the wafer, and a paddle. Also included is a cover which houses a single linear motor for driving all of the paddles in synchrony.
摘要翻译：一种用于同时电镀两个或更多物体的多室电镀系统，使得电沉积材料的厚度和组成基本均匀。电镀溶液在储存器和多室容器之间循环，其具有用于每个隔室的一个阴极 - 阳极（CPA）组件。每个CPA组件具有阳极，适于保持晶片的阴极和使用覆盖未被晶片覆盖的隔室的所有地板的单个电击电极和桨。还包括一个盖子，其上装有用于同时驱动所有桨叶的单个线性马达。

60. 发明授权

US5310580A Electroless metal adhesion to organic dielectric material with phase separated morphology 失效
标题翻译：无机金属与相分离形态的有机介电材料粘合
公开(公告)号：US5310580A
公开(公告)日：1994-05-10
申请号：US874665
申请日：1992-04-27
申请人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
发明人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
IPC分类号： B05D1/34 , C23C18/20 , H05K3/18 , H05K3/38 , B05D2/06
CPC分类号： H05K3/387 , B05D1/34 , C23C18/20 , C23C18/2033 , C23C18/208 , C23C18/24 , C23C18/30 , H05K2201/0154 , H05K2201/0212 , H05K2203/0759 , H05K2203/0773 , H05K2203/0793 , H05K3/181 , H05K3/381
摘要： Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.
摘要翻译：沉积在具有相分离形态的有机电介质层上的化学金属的改善的粘附通过自发形成形态和形貌上粗糙的表面来实现。在一个实施方案中，可以将不同顺序的两相分离的相同聚合物的极性溶剂和两种聚合物前体的三元溶液在基材上成膜并加热形成不同阶数的两相以自发产生粗糙表面。在暴露于碱性溶液时，以比另一相更快的速率蚀刻一相。在粗糙表面上的金属的接种和无电沉积导致金属对电介质层的附着力提高。在第二个实施方案中，将极性溶剂，接种剂，可以在两相中分离的相同聚合物的两种聚合物前体的四元溶液浇铸在基材上的薄膜中，并加热形成三相。固化前体由于相分离而导致表面粗糙化。暴露在碱性溶液中时，以更快的速率蚀刻聚合物相之一并同时打开接种胶体。粗糙表面用光致抗蚀剂涂覆，曝光和显影。随后的无电金属沉积导致金属与电介质层粘附性的改善。该方法适用于将化学镀铜选择性沉积到聚酰亚胺层上。

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