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    • 54. 发明授权
    • Semiconductor device and manufacturing method therefor
    • 半导体装置及其制造方法
    • US06884668B2
    • 2005-04-26
    • US10370055
    • 2003-02-21
    • Shunpei YamazakiAtsuo IsobeTamae TakanoHidekazu Miyairi
    • Shunpei YamazakiAtsuo IsobeTamae TakanoHidekazu Miyairi
    • H01L21/20H01L21/77H01L21/84H01L27/12H01L21/00H01L29/04
    • H01L21/02691H01L21/02678H01L21/02683H01L21/2022H01L27/12H01L27/1281
    • To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.
    • 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置,其能够降低设计变化中涉及的成本,防止晶界在TFT的沟道形成区域中发展,并且防止显着 TFT的迁移率的降低,导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中,在形成在基膜上的多个TFT中,一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间,并且通过沿着投影部的纵向扫描的激光而结晶化。
    • 55. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US09178071B2
    • 2015-11-03
    • US13225703
    • 2011-09-06
    • Hidekazu MiyairiKoji DairikiShunpei YamazakiRyo Arasawa
    • Hidekazu MiyairiKoji DairikiShunpei YamazakiRyo Arasawa
    • H01L21/336H01L29/786H01L29/66
    • H01L29/78678H01L29/66765H01L29/78606H01L29/78648H01L29/78669H01L29/78696
    • Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film. At least the passivation film and the semiconductor layer are processed to have an island shape while an opening reaching the source electrode or the drain electrode is formed, with the use of the etching mask. The etching mask is removed. A pixel electrode is formed over the gate insulating film and the passivation film.
    • 提供一种用于制造具有较少掩模的半导体器件的方法,并且在简单的过程中。 形成栅电极。 依次层叠栅绝缘膜,半导体膜,杂质半导体膜和导电膜,覆盖栅电极。 通过处理导电膜形成源电极和漏电极。 通过处理半导体膜的上部,形成源区域,漏极区域和半导体层,其部分的上部不与源极区域和漏极区域重叠,而杂质 半导体薄膜被划分。 形成栅极绝缘膜,半导体层,源极区域,漏极区域,源极电极和漏极电极之后的钝化膜。 在钝化膜上形成蚀刻掩模。 通过使用蚀刻掩模,至少钝化膜和半导体层被加工成具有岛状,同时形成到达源电极或漏电极的开口。 去除蚀刻掩模。 在栅极绝缘膜和钝化膜上形成像素电极。