专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08045146B2 Method and apparatus for reviewing defect 有权
标题翻译：检查缺陷的方法和装置
公开(公告)号：US08045146B2
公开(公告)日：2011-10-25
申请号：US12141955
申请日：2008-06-19
申请人： Keiya Saito , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
发明人： Keiya Saito , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/8806 , G01N21/9501 , G01N2021/8822 , G01N2021/8861 , G02B21/0032 , G02B21/0072
摘要： The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the existing defect on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.
摘要翻译：本发明提供一种通过以高灵敏度检测待检查的缺陷来检查具有高通量的缺陷的装置和方法，包括：光学显微镜; 修正手段; 和扫描电子显微镜，用于回顾样品上现有的缺陷; 其中所述光学显微镜具有：光学高度检测系统，其光学地检测放置在所述台上的样品的上表面的垂直位置; 用光照亮缺陷的照明光学系统; 会聚和检测由照明光学系统照射的缺陷产生的反射光或散射光以获得图像信号的图像检测光学系统; 以及焦点调节装置，其基于由光学高度检测系统检测到的样本的上表面的垂直位置来调整光学显微镜的对焦位置。

52. 发明申请

US20110228537A1 Adjustable Beam Size Illumination Optical Apparatus and Beam Size Adjusting Method 审中-公开
标题翻译：可调节光束尺寸照明光学装置和光束尺寸调整方法
公开(公告)号：US20110228537A1
公开(公告)日：2011-09-22
申请号：US13049089
申请日：2011-03-16
申请人： Keiko YOSHIMIZU , Hiroshi Aoyama , Shigenobu Maruyama , Yasuhiro Yoshitake
发明人： Keiko YOSHIMIZU , Hiroshi Aoyama , Shigenobu Maruyama , Yasuhiro Yoshitake
IPC分类号： F21V5/04
CPC分类号： G02B27/0955
摘要： An adjustable beam size illumination optical apparatus includes a beam size adjusting optical system which includes groups of cylindrical array lenses disposed correspondingly to the long and short axis directions respectively and having variable intervals among the lenses, and a group of cylindrical telescope lenses disposed correspondingly to one of the long and short axis directions and having variable intervals among the lenses, and adjusts parallel light from a light source in size in accordance with the two axis directions orthogonal to each other. The lens interval of one of the cylindrical array lens groups and the cylindrical telescope lens group is changed to adjust a beam size on a projection surface in accordance with the long axis direction or the short axis direction. Thus, it is possible to adjust the beam size in accordance with the long axis direction and the short axis direction individually, and it is possible to make irradiation with the beam with uniform intensity.
摘要翻译：可调光束尺寸照明光学装置包括光束尺寸调整光学系统，该光束尺寸调整光学系统包括分别对应于长轴和短轴方向设置的圆柱形阵列透镜组，并且在透镜之间具有可变的间隔，以及一组圆柱形望远镜，其对应于一个并且在透镜中具有可变的间隔，并且根据彼此正交的两个轴方向来调整来自光源的尺寸的平行光。根据长轴方向或短轴方向，改变圆柱形阵列透镜组和圆柱形望远镜透镜组中的一个的透镜间隔，以调整投影表面上的光束尺寸。因此，可以分别根据长轴方向和短轴方向调整光束尺寸，并且可以以均匀的强度对光束进行照射。

53. 发明申请

US20100039652A1 METHOD AND APPARATUS FOR MEASURING DISPLACEMENT OF A SAMPLE 有权
标题翻译：测量样品位移的方法和装置
公开(公告)号：US20100039652A1
公开(公告)日：2010-02-18
申请号：US12605089
申请日：2009-10-23
申请人： Toshihiko Nakata , Masahiro Watanabe , Shuichi Baba , Yasuhiro Yoshitake , Mineo Nomoto
发明人： Toshihiko Nakata , Masahiro Watanabe , Shuichi Baba , Yasuhiro Yoshitake , Mineo Nomoto
IPC分类号： G01B9/02
CPC分类号： G01B9/02057 , G01B9/02003 , G01B9/02081 , G01B2290/30 , G01B2290/70 , G03F7/70775
摘要： In a displacement measurement apparatus using light interference, a probe light path is spatially separated from a reference light path. Therefore, when a temperature or refractive index distribution by a fluctuation of air or the like, or a mechanical vibration is generated, an optical path difference fluctuates between both of the optical paths, and a measurement error is generated. In the solution, an optical axis of probe light is brought close to that of reference light by a distance which is not influenced by any disturbance, a sample is irradiated with the probe light, a reference surface is irradiated with the reference light, reflected light beams are allowed to interfere with each other, and a displacement of the sample is obtained from the resultant interference light to thereby prevent the measurement error from being generated by the fluctuation of the optical path difference.
摘要翻译：在使用光干涉的位移测量装置中，探针光路在空间上与参考光路分离。因此，当通过空气等的波动或机械振动产生温度或折射率分布时，光路差在两个光路之间波动，并且产生测量误差。在该解决方案中，将探测光的光轴靠近参考光的光轴不受任何干扰影响的距离，用探测光照射样品，用参考光照射参考表面，反射光允许光束彼此干涉，并且从所得到的干涉光中获得样品的位移，从而防止由于光程差的波动而产生测量误差。

54. 发明授权

US07643140B2 Method and apparatus for inspecting a semiconductor device 有权
标题翻译：用于检查半导体器件的方法和装置
公开(公告)号：US07643140B2
公开(公告)日：2010-01-05
申请号：US12046521
申请日：2008-03-12
申请人： Taketo Ueno , Yasuhiro Yoshitake
发明人： Taketo Ueno , Yasuhiro Yoshitake
IPC分类号： G01N21/00 , G01N21/88 , G06K9/00 , G06K9/32
CPC分类号： G01N21/95607
摘要： A semiconductor defect inspection apparatus using a method of comparing an inspected image with a reference image includes the following: (1) a light source and an illuminating optical system, (2) plural defect optical imaging systems and photo detectors for scattered light detection, (3) a substrate holder and a stage for a scan, (4) means for obtaining the misalignment information on an adjacent die image using the inspection image of a defect optical imaging system with the highest spatial resolution, and means for transmitting the misalignment information to all the defect inspection image processing units, (5) means for correcting misalignment information so that a design and adjustment condition of each optical imaging system may be suited, and means for calculating a difference image between dies based on the corrected misalignment information, and (6) a defect detection and image processing unit for performing defect determination and detection processing based on the difference image between the dies.
摘要翻译：使用将检查图像与参考图像进行比较的方法的半导体缺陷检查装置包括：（1）光源和照明光学系统，（2）多个缺陷光学成像系统和用于散射光检测的光电检测器（ 3）衬底保持器和用于扫描的台，（4）使用具有最高空间分辨率的缺陷光学成像系统的检查图像获得相邻裸片图像上的未对准信息的装置，以及用于将未对准信息发送到所有缺陷检查图像处理单元，（5）用于校正未对准信息的装置，使得每个光学成像系统的设计和调整条件可能适合;以及用于基于校正的未对准信息计算管芯之间的差分图像的装置，以及（ 6）一种用于基于该差异执行缺陷确定和检测处理的缺陷检测和图像处理单元模具之间的图像。

55. 发明授权

US07449689B2 Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权
标题翻译：尺寸测量SEM系统，电路图案形状评估方法和执行该方法的系统
公开(公告)号：US07449689B2
公开(公告)日：2008-11-11
申请号：US11260082
申请日：2005-10-28
申请人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
发明人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
IPC分类号： G03F1/00 , G21K7/00
CPC分类号： H01J37/28 , G03F1/36 , G03F1/68 , G03F7/70625 , H01J37/222 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817
摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.
摘要翻译：本发明涉及一种尺寸测量SEM系统和电路图案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性评估方法。将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微小评估，以及表示一维或二维几何特征计算设计图案和抗蚀剂图案之间的差异。在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像抗蚀图案

56. 发明申请

US20070053581A1 Defect inspection system 有权
标题翻译：缺陷检查系统
公开(公告)号：US20070053581A1
公开(公告)日：2007-03-08
申请号：US11501815
申请日：2006-08-10
申请人： Taketo Ueno , Yasuhiro Yoshitake
发明人： Taketo Ueno , Yasuhiro Yoshitake
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G03F1/84 , G03F7/7065 , H01L21/67288
摘要： The present invention relates to a defect inspection system which can perform inspection condition setting easily in a relatively short period of time, can examine the inspection condition setting even when there is no sample, and further can provide an inspection condition and a defect signal intensity to a person, who sets the inspection condition, to assist the inspection condition setting. In the defect inspection system, a defective image, which is an inspection image, and a reference image corresponding thereto and a mismatched portion of the defective image and the reference image are digitalized as a defect signal intensity and accumulated in association with the inspection condition, and the inspection conditions are changed to repeat evaluations while repeating accumulating works until the evaluation of all the inspection conditions in a set range is completed. After all the evaluations are completed, if there are a plurality of defects to be inspected, the work is repeated by times corresponding to the number of kinds of the defects and a recipe file including the accumulated conditions having the high defect signal intensity and an inspection condition item distribution as a inspection condition recipe is automatically outputted and is provided to the person who sets the inspection condition. And, appearance inspection for detecting a pattern defect or a foreign material defect on a substrate is performed.
摘要翻译：本发明涉及一种能够在较短时间内容易进行检查条件设定的缺陷检查系统，即使没有样本也能够检查检查条件设定，并且还可以提供检查条件和缺陷信号强度设定检查条件的人员，以协助检查条件设定。在缺陷检查系统中，作为检查图像的缺陷图像和与其对应的参考图像和缺陷图像和参考图像的不匹配部分被数字化为缺陷信号强度并且与检查条件相关联地累积，并且在重复累积工作的同时改变检查条件以重复评估，直到完成对设定范围内的所有检查条件的评估。在完成所有评估之后，如果存在多个待检查的缺陷，则对与缺陷的种类数量相对应的次数和包括具有高缺陷信号强度和检查的累积条件的配方文件重复工作条件项目分配作为检查条件配方自动输出，并提供给设置检查条件的人员。并且，进行用于检测基板上的图案缺陷或异物缺陷的外观检查。

57. 发明授权

US06869807B2 Method and its apparatus for manufacturing semiconductor device 失效
标题翻译：半导体器件制造方法及其装置
公开(公告)号：US06869807B2
公开(公告)日：2005-03-22
申请号：US10291270
申请日：2002-11-08
申请人： Yasuhiro Yoshitake , Kenji Tamaki , Masahiro Watanabe
发明人： Yasuhiro Yoshitake , Kenji Tamaki , Masahiro Watanabe
IPC分类号： G03B3/00 , G01Q30/06 , G01Q60/00 , G01Q70/00 , G02B7/04 , G02B7/28 , G03F7/20 , H01L21/027 , H01L21/00 , G06F19/00
CPC分类号： G03F7/70558 , G03F7/706 , G03F7/70625 , G03F7/70641
摘要： Deviations from optimum values of the exposure light quantity and focus of test and product circuit patterns are predicted from the dimensions of the patterns, illumination conditions and the wave aberration of an exposure lens. A signal waveform of scatterometry of the test pattern is linked to the deviations from the optimum values of the exposure light quantity and focus to form a library. The test pattern after exposed and developed in actual steps is collated with the signal waveform in the library measured by the scatterometry to find deviations from the optimum values of the exposure light quantity and focus of the test pattern. Deviations of the optimum values of a product circuit pattern from the deviations of the test pattern are acquired on the basis of the deviations, and the acquired deviations are fed back to subsequent exposure steps.
摘要翻译：根据曝光镜片的图案，照明条件和波像差的尺寸，预测出曝光量和测试和产品电路图案的焦点的最佳值的偏差。测试图案的散射仪的信号波形与曝光光量和焦点的最佳值的偏差相关联以形成库。在实际步骤中暴露和显影后的测试图案与通过散射测量的库中的信号波形进行比较，以发现与测试图案的曝光光量和焦点的最佳值的偏差。基于偏差来获得产品电路图案与测试图案的偏差的最佳值的偏差，并将获得的偏差反馈到随后的曝光步骤。

58. 发明授权

US06281024B1 Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device 失效
标题翻译：半导体装置检查分析方法及其装置及半导体装置的制造方法
公开(公告)号：US06281024B1
公开(公告)日：2001-08-28
申请号：US09322149
申请日：1999-05-28
申请人： Yasuhiro Yoshitake , Kenji Watanabe , Yoshimasa Fukushima , Minori Noguchi
发明人： Yasuhiro Yoshitake , Kenji Watanabe , Yoshimasa Fukushima , Minori Noguchi
IPC分类号： H01L2100
CPC分类号： H01L21/67253
摘要： A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.
摘要翻译：检测和/或分析其中检测半导体器件制造线中处理的半导体晶片中的粒子的半导体器件的方法和系统。从检测到的颗粒中选择颗粒，并蚀刻所选择的颗粒以暴露所选择的颗粒的横截面。所选择的粒子的横截面被暴露，其元素被分析，并且在分析之后，半导体晶片在半导体器件制造线中继续被处理。为了蚀刻，产生具有与所选粒子相交的边缘的图案数据，并且通过根据图案数据的光图案使被感光材料涂覆的半导体晶片曝光，使得边缘与所选择的粒子相交。此后，进行蚀刻以暴露所选粒子的横截面并进行分析。

59. 发明授权

US5684565A Pattern detecting method, pattern detecting apparatus, projection exposing apparatus using the same and exposure system 失效
标题翻译：图案检测方法，图案检测装置，使用其的投影曝光装置和曝光系统
公开(公告)号：US5684565A
公开(公告)日：1997-11-04
申请号：US304586
申请日：1994-09-12
申请人： Yoshitada Oshida , Hisafumi Iwata , Yasuhiro Yoshitake , Minoru Yoshida , Yukihiro Shibata
发明人： Yoshitada Oshida , Hisafumi Iwata , Yasuhiro Yoshitake , Minoru Yoshida , Yukihiro Shibata
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , G03B27/42 , G03B27/72
CPC分类号： G03F9/7065
摘要： A method and apparatus is disclosed for detecting a pattern image of each of a plurality of patterns on the surface of an object. Light emitted from either a light source including a wide wavelength or a light source including a plurality of monowavelengths is applied to the object. The object includes a layered structure having a plurality of layers, wherein at least a part of an uppermost layer of the object is optically transparent. Spectral illumination intensity characteristics of the light emitted from the light source is varied, depending on information about both the layered structure of the object, and a material of the object to obtain a desired spectral illumination intensity, and a pattern image of each of patterns is detected as either a one-dimensional or a two-dimensional image based on light reflected from the object.
摘要翻译：公开了一种用于检测物体表面上的多个图案中的每一个的图案图像的方法和装置。从包括宽波长的光源或包括多个单波长的光源发射的光被施加到物体。该物体包括具有多个层的分层结构，其中物体的最上层的至少一部分是光学透明的。根据关于物体的分层结构和物体的材料的信息，从光源发射的光的光谱照度强度特性是变化的，以获得期望的光谱照度，并且每个图案的图案图像是基于从对象反射的光被检测为一维或二维图像。

60. 发明授权

US4922290A Semiconductor exposing system having apparatus for correcting change in wavelength of light source 失效
标题翻译：具有用于校正光源的波长变化的装置的半导体曝光系统
公开(公告)号：US4922290A
公开(公告)日：1990-05-01
申请号：US253562
申请日：1988-10-05
申请人： Yasuhiro Yoshitake , Yoshitada Oshida
发明人： Yasuhiro Yoshitake , Yoshitada Oshida
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70575 , G03F7/70258 , G03F7/70841 , G03F7/70883
摘要： The invention relates to a semiconductor exposing system for projecting a pattern of a mask onto a semiconductor wafer and, more particularly, to such a system having an apparatus for correcting an influence on the resolution by a fluctuation in wavelength of a laser light source. The system of the invention comprises: a laser light source; an optical projecting system for projecting a laser beam emitted from the laser light source onto the semiconductor wafer through the mask; and an apparatus for receiving a part of the laser beam emitted from the laser light source, for detecting the wavelength fluctuation, and for correcting the position and magnification of the optical projecting system in accordance with the wavelength fluctuation value or an apparatus for correcting the refractive index of the optical projecting system.
摘要翻译：本发明涉及一种用于将掩模的图案投影到半导体晶片上的半导体曝光系统，更具体地说，涉及具有用于通过激光源的波长波动来校正对分辨率的影响的装置的这种系统。本发明的系统包括：激光光源; 光学投影系统，用于通过掩模将从激光源发射的激光束投射到半导体晶片上; 以及用于接收从激光光源发射的激光束的一部分的装置，用于检测波长波动，以及根据波长波动值校正光学投影系统的位置和放大率或用于校正折射率的装置光学投影系统的索引。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式