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51. 发明申请

US20090101963A1 SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS 有权
标题翻译：分离式充电储存装置内部空间过程
公开(公告)号：US20090101963A1
公开(公告)日：2009-04-23
申请号：US11873822
申请日：2007-10-17
申请人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
发明人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42344
摘要： Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了在半导体衬底上形成包含两个分开的次光刻电荷存储节点的存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过去除第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除电荷存储层的暴露部分，同时保留由两个分割子光刻第一多晶硅栅极保护的电荷存储层的部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个拆分次光刻电荷存储节点。

52. 发明申请

US20070202632A1 Capacitor attachment method 有权
标题翻译：电容器附件法
公开(公告)号：US20070202632A1
公开(公告)日：2007-08-30
申请号：US11365119
申请日：2006-02-28
申请人： Wai Lo , Chee Foong
发明人： Wai Lo , Chee Foong
IPC分类号： H01L21/00
CPC分类号： B23K1/203 , B23K2101/36 , H01L24/97 , H01L2224/16 , H01L2224/97 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/16152 , H01L2924/19041 , H01L2924/19105 , H05K3/244 , H05K3/3463 , H05K3/3489 , H05K2201/10636 , H05K2201/10674 , H05K2203/0485 , Y02P70/611 , H01L2224/81 , H01L2924/00
摘要： A method of attaching a capacitor (112) to a substrate (100) includes applying a flux (108) to respective capacitor pads (104, 106) on the substrate (100). The capacitor (112) is placed on the fluxed capacitor pads (104, 106) and a reflow operation is performed on the capacitor (112) and the substrate (100) such that intermetallic interconnects (128) are formed between the capacitor (112) and the substrate (100).
摘要翻译：将电容器（112）附接到基板（100）的方法包括向基板（100）上的各个电容器焊盘（104,106）施加磁通（108）。电容器（112）被放置在磁通的电容器焊盘（104,106）上，并且对电容器（112）和基板（100）执行回流操作，使得金属间互连（128）形成在电容器（112）和基板（100）。

53. 发明申请

US20070092996A1 METHOD OF MAKING SEMICONDUCTOR PACKAGE WITH REDUCED MOISTURE SENSITIVITY 审中-公开
标题翻译：制备具有降低水分敏感性的半导体封装的方法
公开(公告)号：US20070092996A1
公开(公告)日：2007-04-26
申请号：US11551615
申请日：2006-10-20
申请人： Wai Lo , Pei Ooi
发明人： Wai Lo , Pei Ooi
IPC分类号： H01L21/58
CPC分类号： H01L23/49827 , H01L21/561 , H01L21/565 , H01L23/3128 , H01L23/36 , H01L23/4334 , H01L23/49816 , H01L24/97 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01082 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/81 , H01L2924/00
摘要： A method of making a semiconductor package (10) includes placing an integrated circuit (IC) die (12) on a first side (14) of a substrate (16) and electrically connecting the IC die (12) to the first side (14) of the substrate (16). First solder balls (22) are attached to a second side (24) of the substrate (16). An interposer (28) is attached to the IC die (12). A molding operation is performed to encapsulate the IC die (12), the substrate (16), at least a portion of the interposer (28) and at least a portion of the first solder balls (22).
摘要翻译：制造半导体封装（10）的方法包括将集成电路（IC）管芯（12）放置在衬底（16）的第一侧（14）上并将IC管芯（12）电连接到第一侧（14））的基板（16）。第一焊球（22）附接到基板（16）的第二侧（24）。插入器（28）附接到IC管芯（12）。执行模制操作以封装IC管芯（12），衬底（16），至少一部分插入件（28）和至少一部分第一焊球（22）。

54. 发明申请

US20060252143A1 High resolution semiconductor bio-chip with configuration sensing flexibility 审中-公开
标题翻译：高分辨率半导体生物芯片，具有配置感应灵活性
公开(公告)号：US20060252143A1
公开(公告)日：2006-11-09
申请号：US11122356
申请日：2005-05-05
申请人： Wai Lo
发明人： Wai Lo
IPC分类号： G06F19/00 , C12M1/34
CPC分类号： A61B5/04001 , A61B2562/046
摘要： Nano-tube/nano-fiber electrodes are integrated with electronic devices to form a single-chip nano-bio-sensor. The single-chip nano-bio-sensor which uses nano-meter scale electronic devices, includes sensing transistors in close proximity to nano-tube/nano-fiber electrodes, and provides an arrangement of the nano-tube/nano-fiber electrodes into high density clusters and groups so that sensitive, low noise detection of the activities of small cells, large cells and a network of cells is possible. The integrated, single-chip approach provides that differential signal extraction is possible. The single-chip nano-bio-sensor includes small feature size transistors. As such, only low supply voltage is needed.
摘要翻译：纳米管/纳米纤维电极与电子器件集成，形成单芯片纳米生物传感器。采用纳米级电子器件的单芯片纳米生物传感器包括接近纳米管/纳米纤维电极的感应晶体管，并将纳米管/纳米纤维电极的布置提升为高密度群集和群组，使得小细胞，大细胞和细胞网络的活动的敏感，低噪声检测是可能的。集成的单芯片方法提供差分信号提取是可能的。单芯片纳米生物传感器包括小尺寸特征的晶体管。因此，只需要低电源电压。

55. 发明申请

US20060166496A1 Incorporating dopants to enhance the dielectric properties of metal silicates 有权
公开(公告)号：US20060166496A1
公开(公告)日：2006-07-27
申请号：US11389643
申请日：2006-03-23
申请人： Wai Lo , Verne Hornback , Wilbur Catabay , Wei-Jen Hsia , Sey-Shing Sun
发明人： Wai Lo , Verne Hornback , Wilbur Catabay , Wei-Jen Hsia , Sey-Shing Sun
IPC分类号： H01L21/4763
CPC分类号： H01L21/02142 , H01L21/02323 , H01L21/3115 , H01L21/31604 , H01L21/31612 , H01L21/31637 , H01L21/31645
摘要： The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.

56. 发明授权

US06606450B1 Method and apparatus for processing video signals having associated access restriction data 有权
标题翻译：用于处理具有相关联的访问限制数据的视频信号的方法和装置
公开(公告)号：US06606450B1
公开(公告)日：2003-08-12
申请号：US09316441
申请日：1999-05-21
申请人： Tlya Klebanoy , Edward G. Callway , Wai Lo , Ivan W. Y. Yang
发明人： Tlya Klebanoy , Edward G. Callway , Wai Lo , Ivan W. Y. Yang
IPC分类号： H04N591
CPC分类号： H04N5/913 , G06F21/84 , G11B20/00086 , G11B20/00818 , H04N5/775 , H04N7/088 , H04N7/163 , H04N21/4104 , H04N21/4331 , H04N21/435 , H04N21/4627 , H04N21/8355 , H04N2005/91314 , H04N2005/91321 , H04N2005/91371
摘要： A method and apparatus that includes processing for restricting usage of video signals in accordance with associated access restriction data begins by detecting the presence of the associated access restriction data as video signals are being received. The processing continues by interpreting usage instructions regarding the video signal. Such usage instructions may be requesting a digital copy of the video signals be made, sending the video signals to a television output, and/or sending a file of the digital video signal to another party via a file transfer. The processing continues by restricting usage of these video signals as requested by the usage instruction when prohibited by the associated access restriction data.
摘要翻译：包括根据相关联的访问限制数据限制视频信号的使用的处理的方法和装置开始于当正在接收视频信号时检测相关联的访问限制数据的存在。通过解释关于视频信号的使用指令来继续处理。这样的使用指令可以是要求视频信号的数字副本，将视频信号发送到电视输出，和/或通过文件传送将数字视频信号的文件发送到另一方。当相关联的访问限制数据被禁止时，通过限制使用指令的请求来限制这些视频信号的使用。

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