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51. 发明授权

US08213272B2 Multilayered waveguide having protruded light-emitting end 有权
标题翻译：具有突出发光端的多层波导
公开(公告)号：US08213272B2
公开(公告)日：2012-07-03
申请号：US12482851
申请日：2009-06-11
申请人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
发明人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B11/00
CPC分类号： G02B6/1228 , G02B2006/12078 , G11B5/3133 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.
摘要翻译：提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面被定义为具有最大长度的组的第一组包括发光点的中心。在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

52. 发明授权

US08116173B2 Heat-assisted magnetic recording head with laser diode 有权
标题翻译：带激光二极管的热辅助磁记录头
公开(公告)号：US08116173B2
公开(公告)日：2012-02-14
申请号：US12458955
申请日：2009-07-28
申请人： Koji Shimazawa , Seiichi Takayama , Yasuhiro Ito , Daisuke Miyauchi , Kosuke Tanaka
发明人： Koji Shimazawa , Seiichi Takayama , Yasuhiro Ito , Daisuke Miyauchi , Kosuke Tanaka
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/001 , G11B2005/0021
摘要： A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode fixed to the slider. The slider has a waveguide and an overcoat layer that covers the waveguide. The laser diode has an emitting end face including an emission part for emitting laser light, and a bottom surface. The laser diode is arranged so that the bottom surface faces the top surface of the slider. The waveguide has an incident end face opposed to the emission part of the laser diode. The overcoat layer has an end face that faces the emitting end face of the laser diode. As viewed from above, the end face of the overcoat layer has a convex shape protruding toward the emitting end face of the laser diode so that a part of the end face of the overcoat layer lying over the incident end face of the waveguide comes closest to the emitting end face of the laser diode.
摘要翻译：热辅助磁记录头包括滑块和固定到滑块的边缘发射激光二极管。滑块具有覆盖波导的波导和外涂层。激光二极管具有包括用于发射激光的发射部分和底面的发射端面。激光二极管被布置成使得底表面面向滑块的顶表面。波导具有与激光二极管的发射部分相对的入射端面。外涂层具有面向激光二极管的发射端面的端面。从上方观察，外涂层的端面具有向激光二极管的发射端面突出的凸形，使得位于波导的入射端面上的外涂层的端面的一部分最接近激光二极管的发射端面。

53. 发明申请

US20110026379A1 Heat-assisted magnetic recording head with laser diode 有权
标题翻译：带激光二极管的热辅助磁记录头
公开(公告)号：US20110026379A1
公开(公告)日：2011-02-03
申请号：US12458955
申请日：2009-07-28
申请人： Koji Shimazawa , Seiichi Takayama , Yasuhiro Ito , Daisuke Miyauchi , Kosuke Tanaka
发明人： Koji Shimazawa , Seiichi Takayama , Yasuhiro Ito , Daisuke Miyauchi , Kosuke Tanaka
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/001 , G11B2005/0021
摘要： A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode fixed to the slider. The slider has a waveguide and an overcoat layer that covers the waveguide. The laser diode has an emitting end face including an emission part for emitting laser light, and a bottom surface. The laser diode is arranged so that the bottom surface faces the top surface of the slider. The waveguide has an incident end face opposed to the emission part of the laser diode. The overcoat layer has an end face that faces the emitting end face of the laser diode. As viewed from above, the end face of the overcoat layer has a convex shape protruding toward the emitting end face of the laser diode so that a part of the end face of the overcoat layer lying over the incident end face of the waveguide comes closest to the emitting end face of the laser diode.
摘要翻译：热辅助磁记录头包括滑块和固定到滑块的边缘发射激光二极管。该滑块具有覆盖波导的波导和外涂层。激光二极管具有包括用于发射激光的发射部分和底面的发射端面。激光二极管被布置成使得底表面面向滑块的顶表面。波导具有与激光二极管的发射部分相对的入射端面。外涂层具有面向激光二极管的发射端面的端面。从上方观察，外涂层的端面具有向激光二极管的发射端面突出的凸形，使得位于波导的入射端面上的外涂层的端面的一部分最接近激光二极管的发射端面。

54. 发明申请

US20100315736A1 Multilayered Waveguide Having Protruded Light-Emitting End 有权
标题翻译：具有突出发光端的多层波导
公开(公告)号：US20100315736A1
公开(公告)日：2010-12-16
申请号：US12482851
申请日：2009-06-11
申请人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
发明人： Seiichi Takayama , Satoshi Tomikawa , Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/02 , G02B6/10
CPC分类号： G02B6/1228 , G02B2006/12078 , G11B5/3133 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.
摘要翻译：提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面被定义为具有最大长度的组的第一组包括发光点的中心。在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

55. 发明授权

US07835101B2 Planar plasmon antenna for use in near-field recording 有权
标题翻译：用于近场记录的平面等离子体天线
公开(公告)号：US07835101B2
公开(公告)日：2010-11-16
申请号：US12194798
申请日：2008-08-20
申请人： Seiichi Takayama , Koji Shimazawa
发明人： Seiichi Takayama , Koji Shimazawa
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/4866 , G11B7/1387 , G11B2005/001 , G11B2005/0021
摘要： A planar plasmon antenna is formed on a YZ plane including a Z-axis, the Z-axis being a propagation direction of excitation light for near-field light generation. The longitudinal direction of the planar plasmon antenna is oblique relative to the Y-axis, and the angle of a corner of the planar plasmon antenna in the YZ plane is an acute angle. The corner, which forms an acute angle, generates intense near-field light in response to excitation light irradiation.
摘要翻译：平面等离子体激元天线形成在包括Z轴的YZ平面上，Z轴是用于近场光产生的激发光的传播方向。平面等离子体激元的纵向相对于Y轴倾斜，YZ平面中的平面等离子体天线的角度为锐角。形成锐角的角部响应于激发光照射产生强烈的近场光。

56. 发明授权

US08009392B2 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US08009392B2
公开(公告)日：2011-08-30
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

57. 发明申请

US20100177440A1 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US20100177440A1
公开(公告)日：2010-07-15
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/127 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

58. 发明申请

US20120034779A1 APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的装置
公开(公告)号：US20120034779A1
公开(公告)日：2012-02-09
申请号：US13276894
申请日：2011-10-19
申请人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
发明人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
IPC分类号： H01L21/308
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译：在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

59. 发明授权

US07783139B2 Polarized light mode converter 有权
标题翻译：极化光模式转换器
公开(公告)号：US07783139B2
公开(公告)日：2010-08-24
申请号：US11886502
申请日：2006-03-07
申请人： Susumu Noda , Takashi Asano , Yoshinori Tanaka , Seiichi Takayama
发明人： Susumu Noda , Takashi Asano , Yoshinori Tanaka , Seiichi Takayama
IPC分类号： G02B6/00
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/126 , G02B6/14
摘要： The present invention provides a polarized light mode converter which can be provided within a two-dimensional photonic crystal or can be smoothly connected to a two-dimensional photonic crystal. In a two-dimensional photonic crystal made of a slab-like main body provided with a plurality of different refractive index regions (for example, holes 22) arranged in a lattice in the main body, where the different refractive index regions have a refractive index different from that of the main body, a polarized light conversion waveguide 23 is formed which is comprised of defects of the different refractive index regions arranged linearly whose a cross-sectional shape is asymmetrical in a vertical and in a horizontal direction. The polarized light conversion waveguide 23 can be, for example, realized by providing, on a side of the waveguide, holes 221 and 222 extending in a direction oblique to a the main body surface. TE polarized light propagating through the polarized light conversion waveguide 23 is partially converted into TM polarized light due to the asymmetry of the cross-sectional shape of the waveguide. Since the polarized light mode converter is made of a two-dimensional photonic crystal, it can be provided within a two-dimensional photonic crystal or can be smoothly connected to a two-dimensional photonic crystal.
摘要翻译：本发明提供一种可以设置在二维光子晶体内或者可以平滑地连接到二维光子晶体的偏振光模式转换器。在由板状主体构成的二维光子晶体中，其具有在主体中以格子排列的多个不同的折射率区域（例如，孔22），其中不同的折射率区域具有折射率与主体不同的是，形成偏振光转换波导23，该偏振光转换波导23由横截面形状在垂直方向和水平方向上不对称的直线布置的不同折射率区域的缺陷构成。例如，偏振光转换波导23可以通过在波导侧设置沿着与主体表面倾斜的方向延伸的孔221和222来实现。由于波导的横截面形状的不对称性，通过偏振光转换波导23传播的TE偏振光被部分地转换为TM偏振光。由于偏振光模式转换器由二维光子晶体制成，所以它可以设置在二维光子晶体内，或者可以平滑地连接到二维光子晶体。

60. 发明申请

US20100142079A1 Near-Field Light Generating Element And Method For Forming The Element 有权
标题翻译：近场光发射元件及其形成方法
公开(公告)号：US20100142079A1
公开(公告)日：2010-06-10
申请号：US12328232
申请日：2008-12-04
申请人： Kosuke Tanaka , Seiichi Takayama , Satoshi Tomikawa
发明人： Kosuke Tanaka , Seiichi Takayama , Satoshi Tomikawa
IPC分类号： G11B5/02 , B44C1/22
CPC分类号： G11B5/3163 , G11B5/314 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： Provided is a method for forming a near-field light generating element, which is capable of sufficiently suppressing the unevenness of a waveguide surface and the distortion within the waveguide. The forming method comprises the steps of: forming a first etching stopper layer on a lower waveguide layer; forming a second etching stopper layer; forming, on the second etching stopper layer, a plasmon antenna material layer; performing etching with the second etching stopper layer used as a stopper, to form a first side surface of plasmon antenna; forming a side-surface protecting mask so as to cover the first side surface; and performing etching with the first and second etching stopper layers used as stoppers, to form the second side surface. By providing the first and second etching stopper layer, over-etching can be prevented even when each etching process takes enough etch time, which allows easy management of etching endpoints.
摘要翻译：本发明提供一种形成近场光产生元件的方法，其能够充分地抑制波导表面的不均匀性和波导内的变形。成形方法包括以下步骤：在下波导层上形成第一蚀刻阻挡层; 形成第二蚀刻停止层; 在第二蚀刻停止层上形成等离子体激元天线材料层; 用作为阻挡件的第二蚀刻阻挡层进行蚀刻，以形成等离子体激元的第一侧表面; 形成侧面保护罩以覆盖第一侧面; 并且利用用作塞子的第一和第二蚀刻阻挡层进行蚀刻，以形成第二侧表面。通过设置第一和第二蚀刻停止层，即使每个蚀刻工艺都需要足够的蚀刻时间，也可以防止过蚀刻，这允许蚀刻端点的容易管理。

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