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    • 56. 发明申请
    • Method for forming semiconductor device
    • 半导体器件形成方法
    • US20050164494A1
    • 2005-07-28
    • US11090885
    • 2005-03-28
    • Hideo NakagawaMasaru SasagoYoshihiko Hirai
    • Hideo NakagawaMasaru SasagoYoshihiko Hirai
    • G03F7/00H01L21/027H01L21/312H01L21/316H01L21/44H01L21/4763H01L21/768
    • G03F7/0002B82Y10/00B82Y40/00H01L21/76807H01L21/76808H01L21/76817H01L21/76828
    • A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
    • 一种形成半导体器件的方法包括以下步骤:形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上,通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上,在第一温度下使所述可流动膜固化,形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜,形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模,并且通过使用所述掩模来蚀刻所述燃烧膜,形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。
    • 57. 发明授权
    • Liquid crystal display elements with opposite twist domains aligned in
the same direction on one substrate
    • 具有相反扭转域的液晶显示元件在一个基板上沿相同的方向排列
    • US5504604A
    • 1996-04-02
    • US287792
    • 1994-08-09
    • Ken-Ichi TakatoriYoshihiko HiraiKen Sumiyoshi
    • Ken-Ichi TakatoriYoshihiko HiraiKen Sumiyoshi
    • G02F1/1337G02F1/1339
    • G02F1/13394G02F1/133753
    • A liquid crystal display element including a first supporting substrate having a first orienting film for controlling liquid crystal molecules so that the molecules in adjacent orienting domains out of a plurality of orienting domains that are formed by dividing one display unit are oriented in directions that make an angle of 180.degree. with each other, a second supporting substrate having a second orienting film, and facing the first supporting substrate for controlling liquid crystal molecules so that the molecules are oriented in directions that make an angle of 90.degree. with the direction of orientation provided by the first orienting film, and setting a pretilt angle given to the molecules by the first orienting film at a value that is equal to or larger than that given to the molecules by the second orienting film. The second supporting substrate has the alignment in both regions in the same direction.
    • 一种液晶显示元件,包括第一支撑基板,该第一支撑基板具有用于控制液晶分子的第一定向膜,使得通过划分一个显示单元而形成的多个定向域中的相邻取向畴中的分子在使得 180度的角度,具有第二取向膜的第二支撑基板,并且面对用于控制液晶分子的第一支撑基板,使得分子沿着与取向方向成90度角的方向取向 通过第一取向膜,并且通过第一取向膜赋予分子给予的预倾斜角以等于或大于由第二取向膜赋予分子的值。 第二支撑衬底在相同方向上的两个区域中具有对准。
    • 58. 发明授权
    • Quantum device utilizing the quantum effect
    • 使用量子效应的量子器件
    • US5444267A
    • 1995-08-22
    • US331270
    • 1994-10-28
    • Kenji OkadaKiyoshi MorimotoMasaharu UdagawaKoichiro YukiMasaaki NiwaYoshihiko HiraiJuro Yasui
    • Kenji OkadaKiyoshi MorimotoMasaharu UdagawaKoichiro YukiMasaaki NiwaYoshihiko HiraiJuro Yasui
    • H01L29/06H01L21/334H01L29/10H01L29/68H01L29/772H01L29/88H01L29/161
    • B82Y10/00B82Y30/00H01L29/1037H01L29/66931H01L29/772H01L29/882Y10S438/911Y10S438/962
    • A quantum device including a plate-like conductor part having a necking portion made by forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion.
    • 公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。 该方法包括以下步骤:在导体基板上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二条带部分的第二层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域,以在导体基板的表面上形成多个第一凹部; 选择性地覆盖所述多个第一凹部的侧面,所述第一和第二掩模层的侧面具有侧壁膜; 选择性地除去第二掩模层,第一掩模层和侧壁膜被去除; 通过使用第一掩模层和侧壁膜作为蚀刻来蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域,以在第一掩模层和侧壁膜的表面上形成多个第二凹部 基体; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜,以在导体基板上形成具有颈缩部分的板状导体部分。