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1. 发明授权

US07495734B2 In-plane-switching liquid crystal display unit 有权
标题翻译：平面切换液晶显示单元
公开(公告)号：US07495734B2
公开(公告)日：2009-02-24
申请号：US11128237
申请日：2005-05-13
申请人： Teruaki Suzuki , Shinichi Nishida , Hideya Murai , Masayoshi Suzuki , Makoto Watanabe , Yoshihiko Hirai
发明人： Teruaki Suzuki , Shinichi Nishida , Hideya Murai , Masayoshi Suzuki , Makoto Watanabe , Yoshihiko Hirai
IPC分类号： G02F1/1343 , G02F1/1337
CPC分类号： G02F1/134363 , G02F2001/133757 , G02F2201/122
摘要： An in-plane-switching liquid crystal display unit has a two-dimensional matrix of pixel regions each including a first auxiliary region and a second auxiliary region. When no electric field is applied, liquid crystal molecules in the first and second auxiliary regions are directed in respective orientations that lie at 90° with respect to each other. When a voltage is applied, the liquid crystal molecules are rotated in the same direction while maintaining their orientations in the first and second auxiliary regions at 90° with respect to each other. Alternatively, the liquid crystal molecules in the first and second auxiliary regions are directed in the same orientation when no electric field is applied, and when a voltage is applied, the liquid crystal molecules are rotated 15 opposite directions while maintaining their orientations in symmetric relationship.
摘要翻译：平面切换液晶显示单元具有各自包括第一辅助区域和第二辅助区域的像素区域的二维矩阵。当没有施加电场时，第一和第二辅助区域中的液晶分子相对于彼此成90°的各自的取向。当施加电压时，液晶分子沿相同的方向旋转，同时保持它们在第一和第二辅助区域中的取向相对于彼此成90°。或者，当不施加电场时，第一和第二辅助区域中的液晶分子以相同的取向指向，并且当施加电压时，液晶分子沿着相反方向旋转15个方向，同时保持其对称关系的取向。

2. 发明申请

US20070202666A1 Method for fabricating semiconductor device 审中-公开
公开(公告)号：US20070202666A1
公开(公告)日：2007-08-30
申请号：US11783131
申请日：2007-04-06
申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
IPC分类号： H01L21/36
CPC分类号： H01L21/76819 , H01L21/31051
摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

3. 发明申请

US20050264743A1 In-plane-switching liquid crystal display unit 有权
标题翻译：平面切换液晶显示单元
公开(公告)号：US20050264743A1
公开(公告)日：2005-12-01
申请号：US11128237
申请日：2005-05-13
申请人： Teruaki Suzuki , Shinichi Nishida , Hideya Murai , Masayoshi Suzuki , Makoto Watanabe , Yoshihiko Hirai
发明人： Teruaki Suzuki , Shinichi Nishida , Hideya Murai , Masayoshi Suzuki , Makoto Watanabe , Yoshihiko Hirai
IPC分类号： G02F1/1337 , G02F1/1343 , G02F1/136 , G02F1/1368
CPC分类号： G02F1/134363 , G02F2001/133757 , G02F2201/122
摘要： An in-plane-switching liquid crystal display unit has a two-dimensional matrix of pixel regions each including a first auxiliary region and a second auxiliary region. When no electric field is applied, liquid crystal molecules in the first and second auxiliary regions are directed in respective orientations that lie at 90° with respect to each other. When a voltage is applied, the liquid crystal molecules are rotated in the same direction while maintaining their orientations in the first and second auxiliary regions at 90° with respect to each other. Alternatively, the liquid crystal molecules in the first and second auxiliary regions are directed in the same orientation when no electric field is applied, and when a voltage is applied, the liquid crystal molecules are rotated 15 opposite directions while maintaining their orientations in symmetric relationship.
摘要翻译：平面切换液晶显示单元具有各自包括第一辅助区域和第二辅助区域的像素区域的二维矩阵。当没有施加电场时，第一和第二辅助区域中的液晶分子相对于彼此成90°的各自的取向。当施加电压时，液晶分子沿相同的方向旋转，同时保持它们在第一和第二辅助区域中的取向相对于彼此成90°。或者，当不施加电场时，第一和第二辅助区域中的液晶分子以相同的取向指向，并且当施加电压时，液晶分子沿着相反方向旋转15个方向，同时保持其对称关系的取向。

4. 发明授权

US06927822B2 Orientation division type liquid crystal display, fabrication method thereof and image display method 有权
标题翻译：定向分割型液晶显示器及其制造方法和图像显示方法
公开(公告)号：US06927822B2
公开(公告)日：2005-08-09
申请号：US10858953
申请日：2004-06-02
申请人： Hiroaki Matsuyama , Kiyomi Kawada , Seiji Suzuki , Yoshihiko Hirai , Michiaki Sakamoto , Mamoru Okamoto , Yuji Yamamoto , Toshiya Ishii , Teruaki Suzuki , Ken Sumiyoshi , Masayoshi Suzuki
发明人： Hiroaki Matsuyama , Kiyomi Kawada , Seiji Suzuki , Yoshihiko Hirai , Michiaki Sakamoto , Mamoru Okamoto , Yuji Yamamoto , Toshiya Ishii , Teruaki Suzuki , Ken Sumiyoshi , Masayoshi Suzuki
IPC分类号： G02F1/1337 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/136 , G02F1/139 , G09F9/30
CPC分类号： G02F1/1393 , G02F1/133512 , G02F1/133707
摘要： In an orientation division type liquid crystal display device for widen a viewing angle of a display pixel of an active matrix type liquid crystal color display device having a COT structure, pixel color layers (6B, 6R, 6G) as color filters and pixel electrodes 3 are formed on a substrate on the side of the pixel electrodes and slopes 13 are provided along four side peripheries of each pixel electrode. Liquid crystal molecules 8 between each pixel electrode of the pixel electrode substrate and a common electrode of an opposing substrate are controlled in orientation direction along the slopes to divide it to a plurality of directions to thereby widen a viewing angle of a pixel display. The slope is formed on a step portion 12 formed by a BM layer formed on at least one of a gate electrode, a drain electrode and a source electrode formed in a periphery of the pixel electrode or at least one of a gate wiring and a drain wiring formed in the periphery or a step portion formed by partially overlapping peripheral portions of the adjacent pixel color layers.
摘要翻译：在用于加宽具有COT结构的有源矩阵型液晶彩色显示装置的显示像素的视角的定向分割型液晶显示装置中，作为滤色器的像素彩色层（6B，6R，6G）和像素电极3形成在像素电极侧的基板上，并且沿着每个像素电极的四个边缘设置斜面13。像素电极基板的像素电极和对置基板的公共电极之间的液晶分子8沿着倾斜方向被控制，以将其分割成多个方向，从而扩大像素显示的视角。斜面形成在由形成在栅电极，漏电极和形成在像素电极的周边中的源电极中的至少一个上的BM层形成的台阶部分12上，或栅极布线和漏极在周边形成的布线或由相邻的像素彩色层的周边部分重叠形成的台阶部分。

5. 发明授权

US06515719B2 Liquid crystal display apparatus and manufacturing method for the same 失效
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06515719B2
公开(公告)日：2003-02-04
申请号：US09877141
申请日：2001-06-11
申请人： Hirotaka Yamaguchi , Hiroaki Tanaka , Seiji Suzuki , Hiroaki Matsuyama , Takahiko Watanabe , Yoshihiko Hirai , Masayoshi Suzuki , Toshiya Ishii , Teruaki Suzuki , Syuusaku Kido
发明人： Hirotaka Yamaguchi , Hiroaki Tanaka , Seiji Suzuki , Hiroaki Matsuyama , Takahiko Watanabe , Yoshihiko Hirai , Masayoshi Suzuki , Toshiya Ishii , Teruaki Suzuki , Syuusaku Kido
IPC分类号： G02F11343
CPC分类号： G02F1/134336 , G02F1/133707 , G02F1/136213 , G02F2001/136236
摘要： A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix. Each of the plurality of pixels includes a portion of one of the plurality of gate bus lines associated with the pixel, a portion of one of the plurality of drain bus lines associated with the pixel, a portion of a capacitance line associated with the pixel, a pixel transistor having a source and a drain which is connected with the associated drain bus line, a control electrode connected with the source and formed in at least a portion of a region of the pixel, and a the pixel electrode which is in an electrically floating state and which is formed to cover the control electrode and a portion of the capacitance line through at least one of a first insulating film and second insulating film.
摘要翻译：液晶显示装置包括第一基板，第二基板和介于第一基板和第二基板之间的液晶层。第一基板包括在面向第二基板的表面上，延伸到行方向的多个栅极总线，延伸到列方向的多个漏极总线以及以矩阵排列的多个像素。多个像素中的每一个包括与像素相关联的多个栅极总线之一的一部分，与像素相关联的多个漏极总线之一的一部分，与像素相关联的电容线的一部分，具有源极和漏极的像素晶体管，其与相关联的漏极总线连接;控制电极，与源极连接并形成在像素的区域的至少一部分中;以及像素电极，其处于电气并且其形成为通过第一绝缘膜和第二绝缘膜中的至少一个覆盖控制电极和电容线的一部分。

6. 发明授权

US06300996B1 Liquid crystal display apparatus 有权
标题翻译：液晶显示装置
公开(公告)号：US06300996B1
公开(公告)日：2001-10-09
申请号：US09321454
申请日：1999-05-27
申请人： Hiroaki Matsuyama , Kazumi Kobayashi , Yoshihiko Hirai , Toshiya Ishii , Hideya Murai , Masayoshi Suzuki
发明人： Hiroaki Matsuyama , Kazumi Kobayashi , Yoshihiko Hirai , Toshiya Ishii , Hideya Murai , Masayoshi Suzuki
IPC分类号： G02F11343
CPC分类号： G02F1/134336 , G02F1/133707 , G02F2001/13373
摘要： A liquid crystal display device can suppress pixel-based gradation fluctuations observed upon change in angle of view with increased size as it meets wide angle of view characteristics required of a large-sized liquid crystal display device. A device in which a liquid crystal material is sealed between a pair of substrates 31, 32, a plurality of pixel electrodes 38 for applying voltage across the liquid crystal material is arranged on the substrate 31, a common electrode 12 for applying a voltage common to the pixel electrodes 38 is arranged on the substrate 32, and in which a gate line 22 and a drain line 23 of a switching element adapted to control the voltage applied across the pixel electrodes 38 are provided for extending substantially at right angles to each other. In the device, orientation of the liquid crystal molecules 18 neighboring to the pixel electrode 38 is perpendicular to that of liquid crystal molecules 19 neighboring to the common electrode 12, while the respective orientations are substantially parallel to the direction of the gate line 22 or that of the drain line 23.
摘要翻译：液晶显示装置可以抑制视大小变化而观察到的像素级的色调波动，因为其符合大尺寸液晶显示装置所需的广视角特性。将液晶材料密封在一对基板31,32之间的装置，在液晶材料上施加多个用于施加电压的像素电极38设置在基板31上，公共电极12用于施加与像素电极38被布置在衬底32上，并且其中设置适于控制施加在像素电极38两端的电压的开关元件的栅极线22和漏极线23用于彼此基本成直角地延伸。在该器件中，与像素电极38相邻的液晶分子18的取向垂直于与公共电极12相邻的液晶分子19的取向，而各取向基本上平行于栅极线22的方向，或者的排水管路23。

7. 发明授权

US6069678A Liquid crystal display device with data line electric field shield utilizing common electrode 失效
标题翻译：具有数据线电场屏蔽的液晶显示装置，利用公共电极
公开(公告)号：US6069678A
公开(公告)日：2000-05-30
申请号：US960219
申请日：1997-10-29
申请人： Michiaki Sakamoto , Toshiaki Ishiyama , Yoshihiko Hirai
发明人： Michiaki Sakamoto , Toshiaki Ishiyama , Yoshihiko Hirai
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2001/136218
摘要： A liquid crystal display device comprises shield means for shielding an electric field generated from a data line. For example, a common electrode is used as the shielding means in an IPS (In-Plane Switching) rode in which an electric field is applied in a direction respecting parallel to the substrates. Specifically, the common electrode is provided closer to the liquid crystal layer than the data line so that the common electrode covers the data line. As a result, the leak electric field from the data line is shielded by the common electrode. Therefore, the leak electric field does not adversely influence a liquid crystal layer. Consequently, the light shield area for the data line is unnecessary. This increases the aperture ratio.
摘要翻译：液晶显示装置包括用于屏蔽从数据线产生的电场的屏蔽装置。例如，在平行于基板的方向上施加电场的IPS（平面切换）路径中，使用公共电极作为屏蔽装置。具体地，公共电极设置成比数据线更靠近液晶层，使得公共电极覆盖数据线。结果，来自数据线的泄漏电场被公共电极屏蔽。因此，泄漏电场对液晶层没有不良影响。因此，数据线的遮光区域是不必要的。这增加了开口率。

8. 发明授权

US6015978A Resonance tunnel device 有权
标题翻译：共振隧道装置
公开(公告)号：US6015978A
公开(公告)日：2000-01-18
申请号：US175505
申请日：1998-10-20
申请人： Koichiro Yuki , Kiyoyuki Morita , Kiyoshi Morimoto , Yoshihiko Hirai
发明人： Koichiro Yuki , Kiyoyuki Morita , Kiyoshi Morimoto , Yoshihiko Hirai
IPC分类号： H01L21/306 , H01L21/329 , H01L29/88 , H01L29/06
CPC分类号： H01L29/6609 , H01L21/30608 , H01L29/882 , Y10S438/962
摘要： The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etching the semiconductor layer using the mask pattern to form a semiconductor microstructure extending in a first direction parallel to a surface of the substrate, wherein, in the step of selectively etching the semiconductor layer, an etching rate in a second direction vertical to the first direction and parallel to the surface of the substrate is substantially zero with respect to an etching rate in the first direction, and a width of the semiconductor microstructure is substantially equal to a shortest distance between the first opening and the second opening in the second direction.
摘要翻译：形成本发明的半导体微结构的方法包括以下步骤：在具有半导体层作为其上部的衬底上形成具有第一开口和第二开口的掩模图案; 以及使用所述掩模图案选择性地蚀刻所述半导体层，以形成在平行于所述基板的表面的第一方向上延伸的半导体微结构，其中，在选择性地蚀刻所述半导体层的步骤中，沿垂直于所述基板的第二方向的蚀刻速率第一方向并平行于衬底的表面相对于第一方向上的蚀刻速率基本上为零，并且半导体微结构的宽度基本上等于第一开口和第二开口在第二方向上的最短距离。

9. 发明授权

US5514614A Method for producing quantization functional device utilizing a resonance tunneling effect 失效
标题翻译：利用共振隧道效应产生量化功能装置的方法
公开(公告)号：US5514614A
公开(公告)日：1996-05-07
申请号：US421530
申请日：1995-04-13
申请人： Koichiro Yuki , Yoshihiko Hirai , Koyoshi Morimoto , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa
发明人： Koichiro Yuki , Yoshihiko Hirai , Koyoshi Morimoto , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa
IPC分类号： H01L21/329 , H01L29/04 , H01L29/76 , H01L29/88 , H01L21/328
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/045 , H01L29/66151 , H01L29/7606 , H01L29/882 , Y10S438/962 , Y10S438/979
摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.
摘要翻译：通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。这些凹槽的侧壁的表面具有（111）的表面取向。第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。硅薄板足够薄，以作为量子阱。此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。此外，形成一对多晶硅电极并夹着双重阻挡结构。结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。向上述结构添加第三电极提供热电子晶体管。在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应，量子阱和隧道势垒。

10. 发明授权

US5486706A Quantization functional device utilizing a resonance tunneling effect and method for producing the same 失效
标题翻译：利用共振隧道效应的量化功能器件及其制造方法
公开(公告)号：US5486706A
公开(公告)日：1996-01-23
申请号：US249541
申请日：1994-05-26
申请人： Koichiro Yuki , Yoshihiko Hirai , Kiyoshi Morimoto , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa
发明人： Koichiro Yuki , Yoshihiko Hirai , Kiyoshi Morimoto , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa
IPC分类号： H01L21/329 , H01L29/04 , H01L29/76 , H01L29/88 , H01L31/036
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/045 , H01L29/66151 , H01L29/7606 , H01L29/882 , Y10S438/962 , Y10S438/979
摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.
摘要翻译：通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。这些凹槽的侧壁的表面具有（111）的表面取向。第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。硅薄板足够薄，以作为量子阱。此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。此外，形成一对多晶硅电极并夹着双重阻挡结构。结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。向上述结构添加第三电极提供热电子晶体管。在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应，量子阱和隧道势垒。

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