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51. 发明授权

US07939354B2 Method of fabricating nitride semiconductor laser 有权
标题翻译：氮化物半导体激光器的制造方法
公开(公告)号：US07939354B2
公开(公告)日：2011-05-10
申请号：US12396858
申请日：2009-03-03
申请人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
发明人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S2304/12
摘要： A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a predetermined axis extending in the direction of a c-axis of the hexagonal gallium nitride semiconductor. Each marker structure extends along a reference plane defined by the c-axis and an m-axis of the hexagonal gallium nitride semiconductor. The method comprises cutting the substrate along a cutting plane to form a wafer of hexagonal gallium nitride semiconductor, and the cutting plane intersects with the plurality of the marker structures. The wafer has a plurality of first markers, each of which extends from the primary surface to the back surface of the wafer, and each of the first markers comprises part of each of the marker structures. The primary surface of the wafer is semipolar or nonpolar. The method comprises growing a number of gallium nitride based semiconductor layers for a semiconductor laser. The method comprises cleaving the substrate product at a cleavage plane of the hexagonal gallium nitride semiconductor, after forming a substrate product in an electrode forming step.
摘要翻译：一种制造氮化物半导体激光器的方法包括制备具有多个标记结构的基板和由六方晶系氮化镓半导体制成的晶体。基板的主表面和背面与沿六方晶系氮化镓半导体的c轴方向延伸的规定轴相交。每个标记结构沿着由六方晶系氮化镓半导体的c轴和m轴限定的参考平面延伸。该方法包括沿着切割平面切割基板以形成六方晶系氮化镓半导体晶片，切割平面与多个标记结构相交。晶片具有多个第一标记，每个第一标记从晶片的主表面延伸到后表面，并且每个第一标记包括每个标记结构的一部分。晶圆的主表面是半极性或非极性。该方法包括生长用于半导体激光器的多个氮化镓基半导体层。该方法包括在电极形成步骤中形成衬底产物之后，在六方晶系氮化镓半导体的解理面处切割衬底产物。

52. 发明申请

US20100213439A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体光学器件，用于基于氮化物的半导体光学器件的外延晶体管，以及制造半导体发光器件的方法
公开(公告)号：US20100213439A1
公开(公告)日：2010-08-26
申请号：US12752647
申请日：2010-04-01
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04 , H01L33/00 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

53. 发明授权

US07508011B2 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US07508011B2
公开(公告)日：2009-03-24
申请号：US11979873
申请日：2007-11-09
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括光产生区3，第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5和第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7.在此半导体发光器件，光生成区域3由III族氮化物半导体构成，并且包括InAlGAN半导体层。第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且设置在发光区域3上。第二AlX2Ga1-X2N半导体层7具有 p型浓度比第一AlX1Ga1-X1N半导体层5小。第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7设置在发光区域3和第一AlX1Ga1-X1N半导体层5之间。

54. 发明申请

US20080308815A1 GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method 审中-公开
标题翻译： GaN衬底，具有外延层的衬底，半导体器件和GaN衬底制造方法
公开(公告)号：US20080308815A1
公开(公告)日：2008-12-18
申请号：US12138441
申请日：2008-06-13
申请人： Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Katsushi Akita , Takashi Kyono , Yoshiki Miura
发明人： Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Katsushi Akita , Takashi Kyono , Yoshiki Miura
IPC分类号： H01L29/20 , B23B9/00 , H01L21/205
CPC分类号： C30B25/02 , C23C16/01 , C23C16/303 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/02395 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02639
摘要： Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.
摘要翻译：提供可以制造增强发光效率的发光等半导体器件的GaN衬底，其中在GaN衬底主表面上形成外延层的外延衬底，半导体器件和制造方法 GaN衬底。 GaN衬底是具有相对于其法线向量的主表面的衬底，[0001]面取向在两个不同的偏轴方向上倾斜。

55. 发明申请

US20080149954A1 Light generating semiconductor device and method of making the same 有权
公开(公告)号：US20080149954A1
公开(公告)日：2008-06-26
申请号：US12071440
申请日：2008-02-21
申请人： Katsushi Akita
发明人： Katsushi Akita
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , Y10S438/977
摘要： In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.

56. 发明申请

US20050118736A1 Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer 有权
标题翻译：用于测量半导体外延晶片和半导体外延晶片的耐受电压的方法
公开(公告)号：US20050118736A1
公开(公告)日：2005-06-02
申请号：US10484001
申请日：2003-01-23
申请人： Katsushi Akita , Masashi Yamashita , Makoto Kiyama
发明人： Katsushi Akita , Masashi Yamashita , Makoto Kiyama
IPC分类号： G01R31/26 , H01L21/66 , H01L23/544 , H01L29/745 , H01L29/76
CPC分类号： H01L22/14 , H01L22/34
摘要： A measurement-facilitating method of measuring the breakdown voltage of a semiconductor epitaxial wafer, and a semiconductor epitaxial wafer whose breakdown voltage is superior are realized. In a method of measuring the breakdown voltage of a semiconductor epitaxial wafer having to do with the present invention, the breakdown voltage between contacts 12, 12 is measured only through the Schottky contacts, without need for ohmic contacts. Inasmuch as the manufacturing process of forming ohmic contacts is accordingly omitted, the semiconductor epitaxial wafer 10 may be readily used in a breakdown-voltage measurement test. The measurement of the wafer 10 breakdown voltage thus may be readily carried out. Likewise, because the inter-contact breakdown voltage V2 of a wafer 10 can be measured prior to manufacturing a working device from it, unsuitable wafers 10 can be excluded before they are cycled through the working-device fabrication process. Reduction in losses can accordingly be counted upon, in contrast to conventional measuring methods, by which inter-contact breakdown voltage V2 is measured following fabrication of the working devices.
摘要翻译：实现了测量半导体外延晶片的击穿电压的测量方法和击穿电压优良的半导体外延晶片。在测量与本发明有关的半导体外延晶片的击穿电压的方法中，仅通过肖特基触点测量触点12,12之间的击穿电压，而不需要欧姆接触。因此省略了形成欧姆接触的制造工艺，因此半导体外延晶片10可以容易地用于击穿电压测量测试。因此，可以容易地进行晶片10的击穿电压的测量。同样，由于可以在从其制造工作装置之前测量晶片10的接触间击穿电压V 2 2，所以不适合的晶片10可以在它们循环通过工作装置制造之前被排除处理。因此，与传统的测量方法相比，可以减少损耗，通过这些测量方法，在工作装置制造之后测量接触间击穿电压V 2 2。

57. 发明申请

US20050040414A1 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050040414A1
公开(公告)日：2005-02-24
申请号：US10916802
申请日：2004-08-11
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
摘要翻译：为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层在GaN衬底的第一主表面的一侧。

58. 发明授权

US08803274B2 Nitride-based semiconductor light-emitting element 有权
标题翻译：氮化物系半导体发光元件
公开(公告)号：US08803274B2
公开(公告)日：2014-08-12
申请号：US13054037
申请日：2010-06-18
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L31/102 , H01L33/32 , B82Y20/00 , H01S5/343 , H01L33/16 , H01S5/34 , H01S5/32 , H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.
摘要翻译：氮化物系半导体发光元件LE1或LD1具有：氮化镓衬底11，其具有在40°至50°的范围内或大于90°至130°的范围内具有角度α的主表面11a，其中参考平面Sc垂直于在c轴方向上延伸的参考轴线Cx; n型氮化镓系半导体层13; 第二氮化镓基半导体层17; 以及包括多个InGaN阱层和GaN基半导体的多个势垒层23的发光层15，其中多个阱层21的压电极化的方向是来自n型的方向氮化镓系半导体层13朝向第二氮化镓系半导体层17。

59. 发明授权

US08546163B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08546163B2
公开(公告)日：2013-10-01
申请号：US13240368
申请日：2011-09-22
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

60. 发明授权

US08513684B2 Nitride semiconductor light emitting device 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US08513684B2
公开(公告)日：2013-08-20
申请号：US13294034
申请日：2011-11-10
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3202 , H01S5/3211
摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.
摘要翻译：提供一种氮化物半导体发光器件。核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。核心半导体区域包括有源层和载流子阻挡层。第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

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