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51. 发明授权

US08580475B2 Electrostatic charge image developing carrier, method of producing electrostatic charge image developing carrier, electrostatic charge image developing developer, process cartridge, image forming apparatus, and image forming method 有权
标题翻译：静电荷图像显影载体，静电荷图像显影载体的制造方法，静电荷图像显影显影剂，处理盒，成像装置和成像方法
公开(公告)号：US08580475B2
公开(公告)日：2013-11-12
申请号：US13283017
申请日：2011-10-27
申请人： Takeshi Shoji , Toshiaki Hasegawa
发明人： Takeshi Shoji , Toshiaki Hasegawa
IPC分类号： G03G9/113
CPC分类号： G03G9/1133 , G03G9/1136
摘要： An electrostatic charge image developing carrier includes a core particle and a coating layer with which the surface of the core particle is coated. The coating layer includes an acrylic resin having a constituent unit in which a silicone chain is disposed in a branch.
摘要翻译：静电荷图像显影载体包括芯颗粒和涂覆有芯颗粒表面的涂层。涂层包括具有其中硅树链设置在分支中的构成单元的丙烯酸树脂。

52. 发明授权

US08318399B2 Electrostatic charge image development carrier, electrostatic charge image developer, process cartridge, image forming apparatus, and image forming method 有权
标题翻译：静电荷图像显影载体，静电荷图像显影剂，处理盒，成像装置和图像形成方法
公开(公告)号：US08318399B2
公开(公告)日：2012-11-27
申请号：US12869293
申请日：2010-08-26
申请人： Toshiaki Hasegawa , Takeshi Shoji , Sakon Takahashi , Fusako Kiyono
发明人： Toshiaki Hasegawa , Takeshi Shoji , Sakon Takahashi , Fusako Kiyono
IPC分类号： G03G9/08
CPC分类号： G03G9/1131 , G03G9/107 , G03G9/1139 , G03G2215/00957
摘要： An electrostatic charge image development carrier includes magnetic core particles and a resin coating layer that contains titanium dioxide particles doped with niobium and coats each of the magnetic core particles.
摘要翻译：静电荷图像显影载体包括磁芯颗粒和包含掺杂有铌的二氧化钛颗粒并涂覆每个磁芯颗粒的树脂涂层。

53. 发明申请

US20060263731A1 Device and method for feeding fuel 失效
标题翻译：燃料供给装置和方法
公开(公告)号：US20060263731A1
公开(公告)日：2006-11-23
申请号：US11411930
申请日：2006-04-27
申请人： Toshiaki Hasegawa , Susumu Mochida , Toshihumi Hoshino , Kiyoko Hoshino
发明人： Toshiaki Hasegawa , Susumu Mochida , Toshihumi Hoshino , Kiyoko Hoshino
IPC分类号： F23J7/00 , F23D11/44 , F23L15/00
CPC分类号： F23L15/04 , F23C9/00 , F23C2202/10 , F23C2202/20 , F23C2202/30 , F23D14/66 , F23K2401/10 , F23K2900/01041 , F23L7/005 , F23L15/02 , Y02E20/348
摘要： The present invention provides a fuel feeding apparatus and method for improving the controllability of mixing process and mixing ratio of fuel and combustion air, and a combustion system and method for effecting new combustion properties. The fuel feeding apparatus of the combustion system has fuel feeding means, combustion gas extraction means, steam supply means, mixing means and fuel gas introduction means. The combustion gas extraction means extracts combustion gas of a combustion area therefrom. The mixing means mixes the fuel of fuel feeding means with at least one of combustion gas extracted from the furnace and steam of a steam generator. The fuel gas introduction means introduces a mixed fluid of combustion gas, steam and fuel to the combustion area as a fuel gas, and allows the fuel gas to be mixed with the combustion air. A step of mixing the fuel with the combustion gas after extracted from the furnace and a step of mixing the fuel gas with the combustion air are stepwisely carried out, so that the controllability of mixing process and ratio of the air and fuel is improved. Such a control of fuel gas flow enables control of characteristics of flame and production of flame with new properties in the combustion area.
摘要翻译：本发明提供一种用于提高燃料和燃烧空气的混合过程和混合比的可控性的燃料供给装置和方法，以及用于实现新燃烧特性的燃烧系统和方法。燃烧系统的燃料供给装置具有燃料供给装置，燃烧气体提取装置，蒸汽供应装置，混合装置和燃料气体引入装置。燃烧气体提取装置从其中提取燃烧区域的燃烧气体。混合装置将燃料供给装置的燃料与从炉中提取的燃烧气体和蒸汽发生器的蒸汽中的至少一种混合。燃料气体引入装置将燃烧气体，蒸汽和燃料的混合流体作为燃料气体引入燃烧区域，并且允许燃料气体与燃烧空气混合。逐步进行从炉中抽出燃料与燃烧气体混合的步骤，并且使燃料气与燃烧空气混合的步骤逐步进行，从而提高了混合过程的控制性和空气与燃料的比例。这种燃料气体流量的控制使得能够在燃烧区域中具有新的特性来控制火焰的特性和火焰的产生。

54. 发明授权

US07129175B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07129175B2
公开(公告)日：2006-10-31
申请号：US10726678
申请日：2003-12-04
申请人： Hideshi Miyajima , Kazuyuki Higashi , Keiji Fujita , Toshiaki Hasegawa , Kiyotaka Tabuchi
发明人： Hideshi Miyajima , Kazuyuki Higashi , Keiji Fujita , Toshiaki Hasegawa , Kiyotaka Tabuchi
IPC分类号： H01L21/302 , H01L21/31 , H01L21/311
CPC分类号： H01L21/02312 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/0231 , H01L21/3105 , H01L21/31144 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76826
摘要： A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.
摘要翻译：半导体器件制造方法包括在第一室中在衬底上形成包括硅，碳，氮和氢的第一绝缘膜，将衬底运送到除了第一室之外的第二室中，并且在第二室中排出稀有气体并且在排出稀有气体之后，在第一绝缘膜上形成包括硅，碳，氧和氢的第二绝缘膜。

55. 发明授权

US06452274B1 Semiconductor device having a low dielectric layer as an interlayer insulating layer 有权
标题翻译：具有低电介质层作为层间绝缘层的半导体器件
公开(公告)号：US06452274B1
公开(公告)日：2002-09-17
申请号：US09192335
申请日：1998-11-16
申请人： Toshiaki Hasegawa , Hajime Nakayama
发明人： Toshiaki Hasegawa , Hajime Nakayama
IPC分类号： H01L5140
CPC分类号： H01L21/76802 , H01L21/02115 , H01L21/0212 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3127 , H01L21/76801 , H01L21/76835 , H01L21/76885 , H01L23/3677 , H01L23/522 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an insulating layer formed on the substrate, a dielectric organic layer formed on the insulating layer and having a dielectric constant of not more than 3.0, and an interconnection layer in contact with the insulating layer in the dielectric organic layer, wherein the upper surface of the interconnection layer is formed higher than the upper surface of the dielectric organic layer, and a method of manufacture thereof.
摘要翻译：一种半导体器件，包括半导体衬底，形成在衬底上的绝缘层，形成在绝缘层上并具有不大于3.0的介电常数的介电有机层以及与介电有机物中的绝缘层接触的互连层层，其中互连层的上表面形成为高于介电有机层的上表面，及其制造方法。

56. 发明授权

US06333258B1 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06333258B1
公开(公告)日：2001-12-25
申请号：US09533726
申请日：2000-03-23
申请人： Koji Miyata , Toshiaki Hasegawa , Mitsuru Taguchi
发明人： Koji Miyata , Toshiaki Hasegawa , Mitsuru Taguchi
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76813
摘要： A manufacturing method for forming a dual damascene structure in which the effective permittivity of an inter-layer insulating film is lowered without an etching mask for forming a contact hole, which is otherwise formed in the inter-layer insulating film. The manufacturing method comprises the step of forming an inorganic film to serve as an etching mask, on the inter-layer insulating film; the step of forming a first opening pattern for forming a wiring groove, in an upper part of the inorganic film; and the step of forming a second opening pattern for forming a contact hole, so as to coincide with the first opening pattern at least partially. Further, the contact hole is formed in the inter-layer insulating film by employing an etching mask made of the inorganic film, the inorganic film is etched into a state where only a third opening pattern obtained by transferring the first opening pattern is formed, and a wiring groove is formed in the inter-layer insulating film by employing the resulting inorganic film as the etching mask.
摘要翻译：一种用于形成双镶嵌结构的制造方法，其中层间绝缘膜的有效介电常数降低，而没有用于形成在层间绝缘膜中形成的接触孔的蚀刻掩模。该制造方法包括在层间绝缘膜上形成用作蚀刻掩模的无机膜的步骤; 在无机膜的上部形成用于形成布线槽的第一开口图案的步骤; 以及形成用于形成接触孔的第二开口图案的步骤，以便至少部分地与第一开口图案一致。此外，通过使用由无机膜制成的蚀刻掩模，在层间绝缘膜中形成接触孔，将无机膜蚀刻到仅形成通过转印第一开口图案而获得的第三开口图案的状态，以及通过使用所得无机膜作为蚀刻掩模，在层间绝缘膜中形成布线槽。

57. 发明授权

US5681187A Connector with movable contact member and resilient contact band 失效
标题翻译：具有可动接触件和弹性接触带的连接器
公开(公告)号：US5681187A
公开(公告)日：1997-10-28
申请号：US693604
申请日：1996-08-07
申请人： Hirotaka Fukushima , Toshiaki Hasegawa
发明人： Hirotaka Fukushima , Toshiaki Hasegawa
IPC分类号： H01R13/15 , H01R13/187 , H01R13/193 , H01R13/24 , H01R13/52 , H01R13/28
CPC分类号： H01R13/187 , H01R13/193 , H01R13/5205 , Y10S439/921
摘要： A connector in which the sliding movement of a movable contact member is stabilized, thereby securing a positive electrical connection. In the connector of the invention, a hollow connection terminal is fitted in a connector housing, and a coil spring and the slidable, movable contact member are received in this connection terminal. When the two connectors are fitted together, the coil spring urges the movable contact member toward a front end of the connector, thereby providing a sufficient contact load. A resilient, electrically-conductive contact band is provided in a gap between an outer peripheral surface of the movable contact member and an inner peripheral surface of the connection terminal. The connection terminal and the movable contact member are electrically connected together through this contact band, and this contact band prevents the movable contact member from being displaced in a direction perpendicular to the direction of fitting of the connection (that is, the axial direction). Therefore, a more stable sliding movement of the movable contact member is achieved, and a positive electrical connection is achieved.
摘要翻译：一种连接器，其中可动接触件的滑动运动稳定，从而确保正电连接。在本发明的连接器中，中空连接端子装配在连接器壳体中，并且在该连接端子中容纳有螺旋弹簧和可滑动的可动接触构件。当两个连接器装配在一起时，螺旋弹簧将可动接触件推向连接器的前端，从而提供足够的接触负载。在可动接触构件的外周面与连接端子的内周面之间的间隙设置弹性导电接触带。连接端子和可动接触构件通过该接触带电连接在一起，并且该接触带防止可动接触构件在垂直于连接方向（即轴向）的方向上移位。因此，实现了可动接触构件的更稳定的滑动运动，并且实现了正电连接。

58. 发明授权

US5677015A High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same 失效
标题翻译：包含钽的高介电常数材料，用于形成含有钽的高介电常数膜的工艺，以及使用其的半导体器件
公开(公告)号：US5677015A
公开(公告)日：1997-10-14
申请号：US404956
申请日：1995-03-16
申请人： Toshiaki Hasegawa
发明人： Toshiaki Hasegawa
IPC分类号： C23C16/30 , C23C16/34 , H01L21/02 , H01L21/316
CPC分类号： H01L28/40 , C23C16/30 , C23C16/308 , C23C16/34 , H01L21/31604 , Y10S427/106
摘要： A high dielectric constant material containing tantalum expressed by chemical formula Ta.sub.x O.sub.y N.sub.z, where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using Cp.sub.m Ta(N.sub.3).sub.n, where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum-containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.
摘要翻译：包含由化学式TaxOyNz表示的钽的高介电常数材料，其中x，y和z分别为总产率1，z为0.1以上且0.625以下，y为0以上且0.6以下的值，总共0.4y和0.6z等于x或更低的值，以及使用CpmTa（N3）n（其中Cp表示环戊烷）通过化学气相沉积沉积材料的膜的方法，m + n = 或使用含气态的有机金属化合物，或通过在含氮气体下进行等离子体处理的方法。还要求保护的是使用含有钽的高电介质膜的半导体器件和MOS晶体管。

59. 外观设计

USD370659S Connector shell for electric supplier for electric car 失效
公开(公告)号：USD370659S
公开(公告)日：1996-06-11
申请号：US31252
申请日：1994-11-22
申请人： Takayoshi Endo , Toshiaki Hasegawa
设计人： Takayoshi Endo , Toshiaki Hasegawa

60. 外观设计

USD369783S Connector shell for electric supplier for electric car 失效
公开(公告)号：USD369783S
公开(公告)日：1996-05-14
申请号：US31261
申请日：1994-11-22
申请人： Takayoshi Endo , Toshiaki Hasegawa
设计人： Takayoshi Endo , Toshiaki Hasegawa

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