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51. 发明授权

US09054301B2 Method of making an integrated device using oxygen ion implantation 有权
标题翻译：使用氧离子注入制造集成器件的方法
公开(公告)号：US09054301B2
公开(公告)日：2015-06-09
申请号：US14251576
申请日：2014-04-12
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/222
摘要： A method to make magnetic random access memory (MRAM), or integrated device in general, is provided. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. To confine the oxygen ions within the desired region, heavy metals with large atomic number, such as Hf, Ta, W, Re, Os, Ir, Pt, Au is used as ion mask and bottom ion-stopping layer. An oxygen gettering material, selected from Mg, Zr, Y, Th, Ti, Al, Ba is added above and below the active device region to effectively capture the impinging oxygen. After a high temperature anneal, a buried metal oxide layer with sharp oxygen boundaries across the active device region can be obtained.
摘要翻译：提供了一种制造磁性随机存取存储器（MRAM）或一般的集成器件的方法。氧离子注入用于将光刻曝光区域转换为金属氧化物介质基质。为了将氧离子限制在所需区域内，使用原子序数大的重金属如Hf，Ta，W，Re，Os，Ir，Pt，Au作为离子掩模和底部离子停止层。选自Mg，Zr，Y，Th，Ti，Al，Ba的吸氧材料加入到有源器件区域上方和下方，以有效捕获入射氧。在高温退火之后，可以获得在有源器件区域上具有尖锐氧边界的掩埋金属氧化物层。

52. 发明申请

US20140339661A1 METHOD TO MAKE MRAM USING OXYGEN ION IMPLANTATION 审中-公开
标题翻译：使用氧离子植入制备MRAM的方法
公开(公告)号：US20140339661A1
公开(公告)日：2014-11-20
申请号：US14273501
申请日：2014-05-08
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/10 , H01L43/08
CPC分类号： H01L43/12 , H01L29/82 , H01L43/10
摘要： A method to make magnetic random access memory (MRAM), in particular, perpendicular spin transfer torque MRAM or p-STT-MRAM is provided. Electrically isolated memory cell is formed by ion implantation instead of etching and dielectric refill. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. An ultra thin single-layer or multiple-layer of oxygen-getter, selected from Mg, Zr, Y, Th, Ti, Al, Ba is inserted into the active magnetic memory layer in addition to putting a thicker such material above and below the memory layer to effectively capture the impinged oxygen ions. Oxygen is further confined within the core device layer by adding oxygen stopping layer below the bottom oxygen-getter. After a high temperature anneal, a uniformly distributed and electrically insulated metal oxide dielectric is formed across the middle device layer outside the photolithography protected device area, thus forming MRAM cell without any physical deformation and damage at the device boundary.
摘要翻译：提供了一种制造磁性随机存取存储器（MRAM）的方法，特别是垂直自旋转移转矩MRAM或p-STT-MRAM。通过离子注入形成电隔离的存储单元，而不是蚀刻和介电填充。氧离子注入用于将光刻曝光区域转换为金属氧化物介质基质。从Mg，Zr，Y，Th，Ti，Al，Ba中选出的超薄单层或多层吸氧剂除了在上述和下方记忆层，以有效捕获撞击的氧离子。通过在底部吸氧剂下方加入氧气停止层，氧进一步局限在核心装置层内。在高温退火之后，在光刻保护器件区域外的中间器件层上形成均匀分布且电绝缘的金属氧化物电介质，从而形成MRAM电池，在器件边界处没有任何物理变形和损伤。

53. 发明申请

US20140246741A1 MAGNETORESISTIVE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁性存储单元及其制造方法
公开(公告)号：US20140246741A1
公开(公告)日：2014-09-04
申请号：US14194742
申请日：2014-03-02
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： A STT-MRAM comprises apparatus and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of a three-terminal magnetoresistive memory element having a voltage-gated recording. The first terminal, a bit line, is connected to the top magnetic reference layer, and the second terminal is located at the middle recording layer which is connected to the underneath select CMOS transistor through a VIA and the third one, a digital line, is a voltage gate with a narrow pillar underneath the memory layer across an insulating functional layer which is used to reduce the write current by manipulating the perpendicular anisotropy of the recording layer. The fabrication includes formation of a bottom electrode, formation of digital line, formation of memory cell & VIA connection and formation of the top bit line. Photolithography patterning and hard mask etch are used to form the digital line pillar and small memory pillar. Ion implantation is used to convert a buried dielectric layer outside the center memory pillar into an electric conductive path between middle recording layer and underneath CMOS transistor.
摘要翻译： STT-MRAM包括制造自旋转矩磁阻存储器的装置和方法以及具有电压门控记录的多个三端子磁阻存储元件。第一端子，位线连接到顶部磁性参考层，并且第二端子位于通过VIA连接到下面的选择CMOS晶体管的中间记录层，第三端子是数字线路在存储器层下方的具有窄柱的电压门，跨越绝缘功能层，其用于通过操纵记录层的垂直各向异性来减小写入电流。该制造包括形成底部电极，形成数字线，存储单元的形成和VIA连接以及顶部位线的形成。使用光刻图案和硬掩模蚀刻来形成数字线柱和小存储柱。离子注入用于将中心存储柱外部的埋置介质层转换为中间记录层和CMOS晶体管之下的导电路径。

54. 发明授权

US08760819B1 Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields 有权
标题翻译：磁性记录传感器与电镀铁磁屏蔽之间的溅射反铁磁耦合三层
公开(公告)号：US08760819B1
公开(公告)日：2014-06-24
申请号：US12978145
申请日：2010-12-23
申请人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
发明人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/3912
摘要： A magnetic recording sensor for use in a data storage device is described. The sensor has a magnetoresistive sensing element and magnetic shields shielding the magnetoresistive sensing element. The magnetic shields include a first plated soft ferromagnetic layer, a second plated soft ferromagnetic layer, and an antiferromagnetic coupling (AFC) trilayer between the first plated soft ferromagnetic layer and the second plated soft ferromagnetic layer. The AFC trilayer includes a first AFC layer of sputtered ferromagnetic material; a second AFC layer of a nonmagnetic antiferromagnetic exchange material, and a third AFC layer of sputtered ferromagnetic material. Shields with AFC trilayers in bottom, side, and/or top shields, and well as between shields are provided. A method of fabricating is also provided.
摘要翻译：描述了用于数据存储装置的磁记录传感器。传感器具有磁阻感测元件和屏蔽磁阻感测元件的磁屏蔽。磁屏蔽包括第一镀层软铁磁层，第二电镀软铁磁层和第一镀层软铁磁层与第二电镀软铁磁层之间的反铁磁耦合（AFC）三层。 AFC三层包括溅射铁磁材料的第一AFC层; 非磁性反铁磁交换材料的第二AFC层和溅射的铁磁材料的第三AFC层。提供了在底部，侧面和/或顶部屏蔽以及屏蔽之间的AFC三层玻璃的屏蔽。还提供了一种制造方法。

55. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

56. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

57. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

58. 发明授权

US07750620B2 MTJ sensor based method to measure an electric current 有权
标题翻译：基于MTJ传感器的测量电流的方法
公开(公告)号：US07750620B2
公开(公告)日：2010-07-06
申请号：US12321841
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R15/18 , G01R11/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

59. 发明授权

US07619407B2 Gear tooth sensor with single magnetoresistive bridge 有权
标题翻译：带单磁阻桥的齿轮传感器
公开(公告)号：US07619407B2
公开(公告)日：2009-11-17
申请号：US12082257
申请日：2008-04-10
申请人： Yimin Guo , Grace Gorman
发明人： Yimin Guo , Grace Gorman
IPC分类号： G01B7/30 , G01R33/09
CPC分类号： G01B7/30 , G01D5/147 , G01P3/488
摘要： The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. The sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.
摘要翻译：本发明公开了一种适用于齿轮的旋转传感器。 MR（磁阻）传感器被放置在由至少两个永磁体产生的零场区域内。传感器被分为浸没在不同的本地产生的磁环境中的两组。在两组之间拍摄的差分信号然后感测到车轮的齿的运动。还简要描述了用于制造该器件的单晶片方法。

60. 发明申请

US20090256552A1 GEAR TOOTH SENSOR WITH SINGLE MAGNETORESISTIVE BRIDGE 有权
标题翻译：具有单磁铁桥的齿轮传感器
公开(公告)号：US20090256552A1
公开(公告)日：2009-10-15
申请号：US12082257
申请日：2008-04-10
申请人： Yimin Guo , Grace Gorman
发明人： Yimin Guo , Grace Gorman
IPC分类号： G01B7/30
CPC分类号： G01B7/30 , G01D5/147 , G01P3/488
摘要： The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. Said sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.
摘要翻译：本发明公开了一种适用于齿轮的旋转传感器。 MR（磁阻）传感器被放置在由至少两个永磁体产生的零场区域内。所述传感器被分成浸没在不同的局部产生的磁环境中的两组。在两组之间拍摄的差分信号然后感测到车轮的齿的运动。还简要描述了用于制造该器件的单晶片方法。

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