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51. 发明申请

US20070187758A1 SB-MOSFET (Schottky barrier metal-oxide-semiconductor field effect transistor) with low barrier height and fabricating method thereof 审中-公开
标题翻译：具有低势垒高度的SB-MOSFET（肖特基势垒金属氧化物半导体场效应晶体管）及其制造方法
公开(公告)号：US20070187758A1
公开(公告)日：2007-08-16
申请号：US11635179
申请日：2006-12-07
申请人： Myung Jun , Moon Jang , Yark Kim , Chel Choi , Byoung Park , Seong Lee
发明人： Myung Jun , Moon Jang , Yark Kim , Chel Choi , Byoung Park , Seong Lee
IPC分类号： H01L27/12
CPC分类号： H01L29/458 , H01L29/045 , H01L29/66772 , H01L29/7839 , H01L29/78696
摘要： Provided is a high-performance n-type Schottky barrier tunneling transistor with low Schottky barrier for electrons due to a Schottky junction formed on a Si (111) surface created through anisotropic etching. The Schottky barrier tunneling transistor includes: a silicon on insulator (SOI) substrate; a source and a drain formed on the SOI substrate; a channel formed between the source and the drain; a gate insulating layer and a gate electrode sequentially formed on the channel; and a sidewall insulating layer formed on both sidewalls of the gate insulating layer and the gate electrode, wherein an interface between the source/drain and the channel is on a Si (111) in the channel, and the source and drain consists of metal silicide through silicidation with a predetermined metal and forms a Schottky junction with the silicon channel.
摘要翻译：提供了由于通过各向异性蚀刻形成的Si（111）表面上形成的肖特基结，具有用于电子的肖特基势垒低的高性能n型肖特基势垒隧道晶体管。肖特基势垒隧道晶体管包括：绝缘体上硅（SOI）衬底; 在SOI衬底上形成的源极和漏极; 在源极和漏极之间形成的沟道; 顺序地形成在沟道上的栅极绝缘层和栅电极; 以及形成在栅极绝缘层和栅极电极的两个侧壁上的侧壁绝缘层，其中源极/漏极和沟道之间的界面在通道中的Si（111）上，并且源极和漏极由金属硅化物通过与预定金属的硅化，并与硅通道形成肖特基结。

52. 发明申请

US20070119484A1 Control panel of a laundry processing machine 失效
标题翻译：洗衣机控制面板
公开(公告)号：US20070119484A1
公开(公告)日：2007-05-31
申请号：US11437865
申请日：2006-05-22
申请人： Dae Kwon , Hyun Kim , Bo Kim , Hye Park , Seong Lee
发明人： Dae Kwon , Hyun Kim , Bo Kim , Hye Park , Seong Lee
IPC分类号： B08B3/00
CPC分类号： G05G1/105 , D06F39/005
摘要： The control panel of a laundry processing machine according to the present invention making the light emitted from plural LEDs direct only to transparent protrusions by protrudingly forming the ribs in between plural transparent protrusions. Therefore user recognition effect may be increased.
摘要翻译：根据本发明的洗衣加工机的控制面板使得从多个LED发出的光仅通过在多个透明突起之间突出地形成肋而仅引导到透明突起。因此可以增加用户识别效果。

53. 发明申请

US20070062826A1 Structure of cap having storage space 有权
标题翻译：具有存储空间的盖的结构
公开(公告)号：US20070062826A1
公开(公告)日：2007-03-22
申请号：US10592025
申请日：2005-02-16
申请人： Jeong-Min Lee , Seong Lee
发明人： Jeong-Min Lee , Seong Lee
IPC分类号： B65D25/08 , B67D5/06 , B67D5/00
CPC分类号： B65D51/2835 , B65D5/748 , B65D25/08 , B65D25/085 , B65D47/063 , B65D47/123 , B65D51/2807 , B65D75/5861
摘要： A cap with a storage space for containing a secondary material includes a storage portion having a storage space and provided with a seal plate formed on a lower end of the storage space, an outer cap foldably formed on the storage portion and coupled to a spouting portion, a spouting member inserted in the spouting portion, and an operational member for breaking the seal plate when the spouting member is operation.
摘要翻译：具有用于容纳二次材料的存储空间的盖包括具有存储空间并具有形成在存储空间的下端上的密封板的存储部分，可折叠地形成在存储部分上并连接到喷射部分的外盖插入到喷射部分中的喷射构件，以及当喷射构件操作时用于破坏密封板的操作构件。

54. 发明申请

US20070034951A1 Schotiky barrier tunnel transistor and method of manufacturing the same 有权
标题翻译： Schotiky屏障隧道晶体管及其制造方法
公开(公告)号：US20070034951A1
公开(公告)日：2007-02-15
申请号：US11485837
申请日：2006-07-13
申请人： Yark Kim , Seong Lee , Moon Jang , Chel Choi , Myung Jun , Byoung Park
发明人： Yark Kim , Seong Lee , Moon Jang , Chel Choi , Myung Jun , Byoung Park
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/47 , H01L29/458 , H01L29/4908 , H01L29/66545 , H01L29/66772 , H01L29/7839
摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
摘要翻译：提供了一种肖特基势垒隧道晶体管及其制造方法，该晶体管能够使用在半导体 - 金属结上自然形成的肖特基隧道势垒作为隧道来最小化对肖特基势垒隧道晶体管的栅极侧壁的损坏所造成的漏电流屏障。该方法包括以下步骤：在绝缘基板上形成半导体沟道层; 在半导体沟道层上形成虚拟栅极; 在绝缘基板上的虚拟栅极的两侧形成源极和漏极; 去除虚拟门; 在去除所述伪栅极的侧壁上形成绝缘层; 并且在从其中去除虚拟栅极的空间中形成实际栅极。在使用伪栅极制造肖特基势垒隧道晶体管时，可以形成高k电介质栅极绝缘层和金属栅极，并且可以获得具有非常强反应性的金属层的硅化物的稳定特性。

55. 发明申请

US20060137976A1 Vitamin ion generator 有权
标题翻译：维生素离子发生器
公开(公告)号：US20060137976A1
公开(公告)日：2006-06-29
申请号：US11297365
申请日：2005-12-09
申请人： Sung Lee , Seong Lee , Ok Hyun
发明人： Sung Lee , Seong Lee , Ok Hyun
IPC分类号： C25B9/00 , C25B3/00
CPC分类号： H01T23/00 , A61L9/22
摘要： The present invention discloses a vitamin ion generator. The ion generator including a discharge electrode, a ground electrode and vitamins housed in the discharge electrode is installed inside a discharge hole of an air conditioner. A power supply for applying power is connected to the discharge electrode. A reservoir for storing water generated in a heat exchanger of the air conditioner supplies water to the discharge electrode. According to the operation of the air conditioner, the water housed in the reservoir is filled in the discharge electrode. The vitamins housed in the discharge electrode are dissolved in the water and exposed to the surface of the discharge electrode. The vitamin solution exposed to the surface of the discharge electrode is discharged to the direction of the ground electrode by power applied to the discharge electrode. The discharged vitamin ions are externally discharged from the air conditioner by a ventilator of the air conditioner. The vitamin C ions are coupled with the electrons from the discharge electrode. As a result, the vitamin ion generator prevents the electrons discharged from the discharge electrode from generating a large quantity of OH−, neutralizes OH− generated by electron collision to prevent free radical operations in a human body, and transmits the vitamin C ions to the human body for anti-oxidization.
摘要翻译：本发明公开了一种维生素离子发生器。包含放电电极，接地电极和容纳在放电电极中的维生素的离子发生器安装在空调的排出孔的内部。用于施加电力的电源连接到放电电极。用于存储在空调的热交换器中产生的水的储存器将水供应到放电电极。根据空调的操作，容纳在储存器中的水被填充在放电电极中。容纳在放电电极中的维生素溶解在水中并暴露于放电电极的表面。暴露于放电电极表面的维生素溶液通过施加到放电电极的电力而向接地电极的方向排出。排出的维生素离子通过空调机的呼吸机从空调机外部排出。维生素C离子与来自放电电极的电子耦合。结果，维生素离子发生器防止从放电电极排出的电子产生大量的OH - ，中和由电子碰撞产生的OH - 以防止自由基并将维生素C离子透过人体进行抗氧化。

56. 发明申请

US20060131664A1 N-type schottky barrier tunnel transistor and manufacturing method thereof 有权
标题翻译： N型肖特基势垒隧道晶体管及其制造方法
公开(公告)号：US20060131664A1
公开(公告)日：2006-06-22
申请号：US11188076
申请日：2005-07-22
申请人： Yark Kim , Moon Jang , Jae Shin , Seong Lee
发明人： Yark Kim , Moon Jang , Jae Shin , Seong Lee
IPC分类号： H01L29/76
CPC分类号： H01L29/665 , H01L21/2252 , H01L21/2254 , H01L21/28518 , H01L21/28537 , H01L29/458 , H01L29/4908 , H01L29/66636 , H01L29/7834 , H01L29/7839
摘要： An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal suicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.
摘要翻译：提供了n型SBTT及其制造方法。 SBTT包括硅层，栅极，具有稀土金属硅化物层和过渡金属硅化物层的双层。硅层具有沟道区。栅极以重叠的方式形成在沟道区上，并且在其相对于硅层的界面上具有栅极电介质层。双层形成为具有介于硅层之间的沟道区的源极/漏极。

57. 发明申请

US20060121661A1 Non-volatile memory device using mobile ionic charge and method of manufacturing the same 审中-公开
标题翻译：使用移动离子电荷的非易失性存储器件及其制造方法
公开(公告)号：US20060121661A1
公开(公告)日：2006-06-08
申请号：US11296084
申请日：2005-12-06
申请人： Jong Yang , In Baek , Ki Im , Chang Ahn , Won Cho , Seong Lee
发明人： Jong Yang , In Baek , Ki Im , Chang Ahn , Won Cho , Seong Lee
IPC分类号： H01L21/8234 , H01L21/425
CPC分类号： H01L21/28185 , B82Y10/00 , G11C16/0466 , H01L21/265 , H01L29/40117 , H01L29/7881 , H01L29/792
摘要： A non-volatile memory device using mobile ionic charges and a method of manufacturing the same are provided. The method includes forming a gate dielectric layer on a semiconductor substrate, injecting mobile ionic charges into the gate dielectric layer by leading source plasma to a surface of the gate dielectric layer and implanting ions within the source plasma into the gate dielectric layer using plasma doping, forming on the gate dielectric layer a gate to which a control voltage controlling distribution of the mobile ionic charges within the gate dielectric layer is supplied to control a threshold voltage, and forming a source region and a drain region in the semiconductor substrate near the gate.
摘要翻译：提供了使用移动离子电荷的非易失性存储器件及其制造方法。该方法包括在半导体衬底上形成栅极电介质层，通过将源极等离子体引导到栅极电介质层的表面并将源极等离子体内的离子注入到等离子体掺杂的栅极介质层中，将移动的离子电荷注入到栅极电介质层中，在所述栅极电介质层上形成控制栅极电介质层内的移动离子电荷分布的控制电压以控制阈值电压的栅极，以及在栅极附近的半导体衬底中形成源极区域和漏极区域。

58. 发明申请

US20060116144A1 Channel assignment method for multi-FA CDMA cellular systems 有权
标题翻译：多FA CDMA蜂窝系统的信道分配方法
公开(公告)号：US20060116144A1
公开(公告)日：2006-06-01
申请号：US11331221
申请日：2006-01-13
申请人： Bong Song , Jeong Kim , Youl Lee , Gab Jang , Se Oh , Seong Lee
发明人： Bong Song , Jeong Kim , Youl Lee , Gab Jang , Se Oh , Seong Lee
IPC分类号： H04Q7/20 , H04B7/00
CPC分类号： H04W72/0466 , H04B17/318 , H04B17/382 , H04B2201/70702 , H04W16/14 , H04W28/26 , H04W52/0206 , H04W72/02 , H04W72/0453 , H04W72/082 , H04W76/10 , H04W84/042 , Y02D70/00
摘要： A method for assigning a channel in multi-FA CDMA mobile communication system according to the received power prevents communication quality of a FA from being inferior to that of the others by managing the interference level of the FA. The method comprises the steps of: comparing a first threshold value with received power when the base station receives a new call request; assigning a traffic channel in a first FA of the request, if the received power is less than the first threshold value, and searching a second FA of which received power is least, if not; comparing a second threshold value with the received power of the second FA; and assigning a traffic channel in the second FA if the received power is less than the second threshold value, and rejecting the request, if not.
摘要翻译：根据接收到的功率，在多FA CDMA移动通信系统中分配信道的方法通过管理FA的干扰电平来防止FA的通信质量劣于其他信道。该方法包括以下步骤：当基站接收到新的呼叫请求时，将第一阈值与接收功率进行比较; 如果接收功率小于第一阈值，则将业务信道分配到请求的第一FA中，并且如果不是则搜索接收功率最小的第二FA; 将第二阈值与所述第二FA的接收功率进行比较; 以及如果所接收的功率小于所述第二阈值，则在所述第二FA中分配业务信道，如果不是则拒绝所述请求。

59. 发明申请

US20060050366A1 Amplitude separation type optical amplification apparatus 有权
标题翻译：振幅分离型光放大装置
公开(公告)号：US20060050366A1
公开(公告)日：2006-03-09
申请号：US11133556
申请日：2005-05-20
申请人： Hong Kong , Seong Lee
发明人： Hong Kong , Seong Lee
IPC分类号： H01S3/00
CPC分类号： H01S3/2333 , H01S3/10076 , H01S3/2316 , H01S3/2383
摘要： An optical amplification apparatus comprises a polarizing beam splitter for reflecting a portion of an incident light and transmitting a remaining portion of the incident light, depending upon a polarized state of the incident light; and at least two optical amplification means each including a first polarizing plate which makes polarized states of the light before and after the light reflected from the polarizing beam splitter reciprocatingly passes through the first polarizing plate, to be orthogonal to each other, an amplitude division plate for amplitude-dividing the light having passed through the first polarizing plate, into first and second lights, and optical amplifiers for respectively amplifying the first and second lights which are amplitude-divided by the amplitude division plate. The optical amplification means are located such that the light outputted from upstream optical amplification means is incident upon the polarizing beam splitter included in downstream optical amplification means.
摘要翻译：光放大装置包括偏振分束器，用于根据入射光的偏振状态反射入射光的一部分并透射入射光的剩余部分; 以及至少两个光放大装置，每个光放大装置包括第一偏振板，其使得从偏振分束器反射的光之前和之后的光的偏振状态往复通过第一偏振片，彼此正交;振幅分隔板用于将通过第一偏振片的光分解为第一和第二光;以及光放大器，用于分别放大由分频板幅度分割的第一和第二光。光放大装置被定位成使得从上游光放大装置输出的光入射到包括在下游光放大装置中的偏振分束器上。

60. 发明申请

US20060013053A1 Semiconductor memory device for performing refresh operation 有权
标题翻译：用于执行刷新操作的半导体存储器件
公开(公告)号：US20060013053A1
公开(公告)日：2006-01-19
申请号：US11008279
申请日：2004-12-10
申请人： Seong Lee
发明人： Seong Lee
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/401 , G11C29/02 , G11C29/026 , G11C29/12 , G11C29/50016 , G11C2211/4065
摘要： A semiconductor memory device comprises a sensing control unit, a separation control unit and a sense amplifier enable unit. The sensing control unit outputs a plurality of mat enable signals in response to a mat selecting signal, a clock enable signal, a refresh signal and a test mode signal. The separation control unit outputs a plurality of separation control signals which control driving of a separation transistor adjacent to the mat in response to the plurality of mat enable signals. The sense amplifier enable unit outputs a sense amplifier enable signal for controlling driving of the sense amplifier in response to the clock enable signal, the mat selecting signal, the test mode signal and the refresh signal. In the semiconductor memory device, a refresh operation is performed at an unlimited sense amplifier test mode.
摘要翻译：半导体存储器件包括感测控制单元，分离控制单元和读出放大器使能单元。感测控制单元响应于垫选择信号，时钟使能信号，刷新信号和测试模式信号输出多个垫使能信号。分离控制单元输出多个分离控制信号，其响应于多个垫使能信号控制与垫相邻的分离晶体管的驱动。读出放大器使能单元响应于时钟使能信号，扫描选择信号，测试模式信号和刷新信号，输出用于控制读出放大器驱动的读出放大器使能信号。在半导体存储器件中，以无限制的读出放大器测试模式执行刷新操作。

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