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51. 发明授权

US08012882B2 Method of manufacturing nitride substrate for semiconductors 失效
标题翻译：半导体氮化物衬底的制造方法
公开(公告)号：US08012882B2
公开(公告)日：2011-09-06
申请号：US12238449
申请日：2008-09-26
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H01L21/302
CPC分类号： C30B29/406 , C30B33/00
摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.
摘要翻译：在通过使用气相沉积在基底杂质衬底上形成GaN层然后除去基底衬底而制造的独立GaN膜中，由于热膨胀系数和晶格常数的层间的差异，弓将为大的±40μm至 ±100μm。由于通过光刻的弓形器件制造是具有挑战性的，所以将弓降低到+30μm至-20μm是目标。将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。通过蚀刻来去除已经变得凸起的表面上的损伤层，这会削弱弓形。或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。由于损伤层由于凹面变得凸起，因此适当地蚀刻出损伤层，从而使弓弯曲。

52. 发明授权

US08008165B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 失效
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US08008165B2
公开(公告)日：2011-08-30
申请号：US12836001
申请日：2010-07-14
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L21/30
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

53. 发明申请

US20110114261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110114261A1
公开(公告)日：2011-05-19
申请号：US13003102
申请日：2009-06-16
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
IPC分类号： C23F1/08
CPC分类号： H01L21/6719 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01L21/67126 , H01L21/68785
摘要： A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
摘要翻译：等离子体处理装置包括处理容器，其中对待处理的基板进行等离子体处理，保持台设置在处理容器中并保持在其上待处理的基板，电介质板，其设置在位置面向保持阶段并将微波传输到处理容器中，以及反应气体供应单元，其向保持阶段保持的待处理基板的中心区域提供用于等离子体处理的反应气体。这里，反应气体供给单元包括喷射器基座，该喷射器基座设置在比介质板的面向保持台的壁面更靠内侧的位置。在喷射器基座中形成供应孔，其将用于等离子体处理的反应气体供应到处理容器中。

54. 发明授权

US07919343B2 Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof 有权
标题翻译： III族氮化物晶体及其表面处理方法，III族氮化物叠层及其制造方法以及III族氮化物半导体器件及其制造方法
公开(公告)号：US07919343B2
公开(公告)日：2011-04-05
申请号：US12432105
申请日：2009-04-29
申请人： Keiji Ishibashi , Naoki Matsumoto , Masato Irikura
发明人： Keiji Ishibashi , Naoki Matsumoto , Masato Irikura
IPC分类号： H01L21/00
CPC分类号： H01L21/02013 , C30B29/403 , C30B33/00 , H01L21/02024 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface.
摘要翻译：用于III族氮化物晶体的表面处理的方法包括以下步骤：使用莫氏硬度高于7的硬磨粒研磨III族氮化物晶体的表面，并且对该组的研磨表面进行无磨粒抛光使用不含磨粒的研磨液的III族氮化物结晶，不含磨粒的研磨液的pH为1以上且6以下，8.5以下且14以下。因此，可以提供III族氮化物晶体的表面处理，根据该III族氮化物晶体的表面处理可以去除在研磨晶体上残留的硬磨粒以减少晶体表面的杂质。

55. 发明授权

US07872331B2 Nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶圆
公开(公告)号：US07872331B2
公开(公告)日：2011-01-18
申请号：US12812697
申请日：2009-02-16
申请人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
发明人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
IPC分类号： H01L29/06 , H01L29/12 , H01L31/0256 , H01L29/20 , H01L31/0304 , H01L23/58
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.
摘要翻译：氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角，＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚边缘过程诱导的降解层。

56. 发明申请

US20100261004A1 Rubber-Metal Laminate 审中-公开
标题翻译：橡胶金属层压板
公开(公告)号：US20100261004A1
公开(公告)日：2010-10-14
申请号：US12308441
申请日：2007-04-24
申请人： Toshihiro Higashira , Atsushi Yokota , Naoki Matsumoto
发明人： Toshihiro Higashira , Atsushi Yokota , Naoki Matsumoto
IPC分类号： B32B15/082 , B32B5/16
CPC分类号： C08L9/02 , B32B15/06 , B32B25/14 , B32B25/18 , B32B2581/00 , C08K5/39 , C08K5/40 , C09K3/10 , C09K2200/0208 , C09K2200/0239 , C09K2200/0247 , C09K2200/0447 , C09K2200/0488 , C09K2200/0612 , Y10T428/254 , Y10T428/31696
摘要： A rubber-metal laminate, which comprises a metallic sheet and a rubber layer formed on the metallic sheet, the rubber layer being formed from an NBR composition comprising (A) 100 parts by weight of nitrile rubber, (B) 0.1-5 parts by weight of sulfur, and (C) 0.5-10 parts by weight of at least one sulfur donor compound selected from tetrabenzylthiuram disulfide, tetrakis(2-ethylhexyl)thiuram disulfide, zinc tetrabenzyldithiocarbamate, and 1,6-bis(N,N-dibenzylthiocarbamodithio)-hexane, preferably the NBR composition further containing (D) 3-100 parts by weight of silica and (E) 60-200 parts by weight of aluminum oxide having an average particle size of 0.1-10 μm, as a rubber layer-forming composition, where the rubber layer can be formed on the metallic sheet without generating nitrosoamines as controlled items of TRGS552, PRTR, etc. and without lowering the vulcanizate physical properties or vulcanization rate. The rubber-metal laminate can be effectively used as a seal material.
摘要翻译：一种橡胶金属层压体，其包括金属片和形成在金属片上的橡胶层，橡胶层由NBR组合物形成，所述NBR组合物包含（A）100重量份丁腈橡胶，（B）0.1-5重量份至少一种选自二硫化四苄基秋兰姆，四（2-乙基己基）二硫化锡秋兰姆，四苄基二硫代氨基甲酸锌和1,6-双（N，N-二苄基硫代氨基二硫代磷酸酯）的硫供体化合物）己烷，优选NBR组合物，其还含有（D）3-100重量份二氧化硅和（E）60-200重量份平均粒径为0.1-10微米的氧化铝作为橡胶层 - 形成组合物，其中可以在金属片上形成橡胶层而不产生作为受控物品的TRGS552，PRTR等的亚硝基胺，并且不降低硫化物的物理性能或硫化速率。橡胶 - 金属层压板可以有效地用作密封材料。

57. 发明授权

US07803953B2 Catalyst for producing arylamine and process for producing arylamine by means thereof 有权
标题翻译：用于制备芳基胺的催化剂及其制备方法
公开(公告)号：US07803953B2
公开(公告)日：2010-09-28
申请号：US11806565
申请日：2007-06-01
申请人： Takanori Miyazaki , Masakazu Nishiyama , Naoki Matsumoto
发明人： Takanori Miyazaki , Masakazu Nishiyama , Naoki Matsumoto
IPC分类号： C07C209/10
CPC分类号： B01J31/24 , B01J2231/4283 , B01J2531/824 , C07C209/10 , C07C209/66 , C07C211/54
摘要： To provide a process for preparing an arylamine highly selectively and highly efficiently, which is also industrially superior without a fear of a side reaction when a strong base is employed. An aryl compound having an active group is reacted with an amine compound in the presence of a base by means of a catalyst for producing an arylamine which comprises a palladium compound having a tertiary phosphine group and a phase-transfer catalyst.
摘要翻译：提供一种高选择性和高效制备芳基胺的方法，当使用强碱时，它也在工业上优于无副反应的担心。具有活性基团的芳基化合物与胺化合物在碱的存在下通过用于制备包含具有叔膦基的钯化合物和相转移催化剂的芳基胺的催化剂进行反应。

58. 发明授权

US07535082B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US07535082B2
公开(公告)日：2009-05-19
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L23/544
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。

59. 发明授权

US07504323B2 GaN single crystal substrate and method of making the same 有权
标题翻译： GaN单晶衬底及其制造方法
公开(公告)号：US07504323B2
公开(公告)日：2009-03-17
申请号：US10691569
申请日：2003-10-24
申请人： Kensaku Motoki , Takuji Okahisa , Naoki Matsumoto
发明人： Kensaku Motoki , Takuji Okahisa , Naoki Matsumoto
IPC分类号： C30B25/04 , C30B25/20
CPC分类号： C30B25/02 , B82Y20/00 , C30B25/00 , C30B29/406 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01S5/0206 , H01S5/34333 , H01S2304/00 , H01S2304/04 , Y10S117/902 , Y10S438/942
摘要： The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.
摘要翻译：制造GaN单晶衬底的方法包括掩模层形成步骤，在GaAs衬底2上形成具有彼此分离设置的多个开口窗口10的掩模层8; 以及在掩模层8上生长由GaN制成的外延层12的外延层生长步骤。

60. 发明授权

US07446962B2 Camera 失效
标题翻译：相机
公开(公告)号：US07446962B2
公开(公告)日：2008-11-04
申请号：US11999817
申请日：2007-12-06
申请人： Naoki Matsumoto , Hitoshi Yoshida
发明人： Naoki Matsumoto , Hitoshi Yoshida
IPC分类号： G02B7/02
CPC分类号： H04N5/2252 , H04N5/2251 , H04N5/2254
摘要： A camera having a lens barrel housed therein includes a reflection optical member for reflecting a light beam incident along a first optical axis (O1) from a subject so as to reflect the light beam toward a second optical axis (O2) intersecting the first optical axis; a light-quantity adjusting member for adjusting the quantity of incident light from the subject; and a drive source for displacing the light-quantity adjusting member, in which by displacing the light-quantity adjusting member, the quantity of the incident light from the subject can be adjusted, and the light-quantity adjusting member is displaced in a direction substantially perpendicular to an optical axial plane inclusive of the first optical axis and the second optical axis so as to adjust the light-quantity.
摘要翻译：具有容纳在其中的镜筒的照相机包括反射光学构件，用于反射沿着来自被摄体的第一光轴（O 1）入射的光束，以将光束朝向与第一光轴相交的第二光轴（O 2）反射光轴; 光量调节构件，用于调节来自被摄体的入射光的量; 以及用于移动光量调节构件的驱动源，其中通过使光量调节构件移位，可以调节来自被摄体的入射光的量，并且光量调节构件在基本上被调整的方向上移位垂直于包括第一光轴和第二光轴的光学轴向平面，以便调节光量。

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