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51. 发明申请

US20050215797A1 Pyrazole derivatives and process for the production thereof 有权
标题翻译：吡唑衍生物及其制备方法
公开(公告)号：US20050215797A1
公开(公告)日：2005-09-29
申请号：US10521593
申请日：2003-07-31
申请人： Masao Nakatani , Minoru Ito , Masahiro Miyazaki
发明人： Masao Nakatani , Minoru Ito , Masahiro Miyazaki
IPC分类号： C07D231/20 , C07D231/22 , A61K31/4152 , C07D231/18
CPC分类号： C07D231/20 , C07D231/22
摘要： The present invention provides pyrazole derivatives useful as production intermediates for isoxazoline derivatives having an excellent herbicidal effect and selectivity between crops and weeds as well as processes for producing the same. The pyrazole derivatives or pharmaceutically acceptable salts thereof which are inventive compounds are represented by the general formula [I] or a salt thereof: wherein R1 represents a C1 to C6 alkyl group, R2 represents a C1 to C3 haloalkyl group, R3 represents a hydrogen atom, a C1 to C3 alkyl group which may be substituted with one or more substituents selected from the following substituent group α, or a formyl group, R4 represents a hydrogen atom or a C1 to C3 haloalkyl group, provided that R4 represents a C1 to C3 haloalkyl group in the case that R3 is a hydrogen or a formyl group, and R4 is a hydrogen group or a C1 to C3 haloalkyl group in the case that R3 is a C1 to C3 alkyl group which may be substituted with one or more substituents selected from the following substituent group α.
摘要翻译：本发明提供了可用作具有优异的除草效果和作物和杂草之间的选择性的异恶唑啉衍生物的生产中间体的吡唑衍生物及其制备方法。作为本发明化合物的吡唑衍生物或其药学上可接受的盐由通式[I]或其盐表示：其中R 1表示C 1至C 6烷基，R 2， / SUP>表示C1至C3卤代烷基，R 3表示氢原子，可被一个或多个选自以下取代基组α的取代基取代的C1至C3烷基，或甲酰基，R 4表示氢原子或C 1至C 3卤代烷基，条件是R 4表示C 1至C 3卤代烷基， 3是氢或甲酰基，R 4是氢或C1至C3卤代烷基，在R 3是C1的情况下可以被一个或多个选自以下取代基组α的取代基取代的C 3烷基。

52. 发明授权

US06646471B2 Signal transfer circuit 失效
公开(公告)号：US06646471B2
公开(公告)日：2003-11-11
申请号：US10075392
申请日：2002-02-15
申请人： Minoru Ito
发明人： Minoru Ito
IPC分类号： H03K19094
CPC分类号： H03K19/01855
摘要： A transmission side circuit and a reception side circuit are connected to each other via a signal transfer path. An output transistor of the transmission side circuit has an open drain type structure, and the reception side circuit is provided with a reception transistor that is connected to the signal transfer path. There are provided a precharge transistor for supplying a voltage to a node extending from the reception transistor to an internal circuit, and a selector circuit connected to the gate of the reception transistor. The selector circuit receives a bias voltage Vbi and a ground voltage Vss, and switches the voltage to be applied to the gate of the reception transistor between the bias voltage Vbi and the ground voltage Vss according to the mode switching signal Smd. It is possible to suppress the voltage amplitude of a signal along the signal transfer path, and thus to reduce the electromagnetic interference occurring along the signal transfer path.

53. 发明授权

US06596612B2 Method for manufacturing semiconductor circuit 失效
标题翻译：制造半导体电路的方法
公开(公告)号：US06596612B2
公开(公告)日：2003-07-22
申请号：US10085107
申请日：2002-03-01
申请人： Minoru Ito , Takafumi Nakamura , Masanori Harada
发明人： Minoru Ito , Takafumi Nakamura , Masanori Harada
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed. According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be possibly formed. In this case, when the particle having an abnormal grain diameter is irradiated with a laser beam to be turned into a granule and a high resistance is given therearound, the TFT having a different threshold value is prevented from being operated, and a leak current does not flow during the off state of the original TFT, thereby improving the display characteristic.
摘要翻译：本发明的目的是提供一种用于制造半导体电路的方法，即使局部形成这样的TFT，也可以防止包含具有不同阈值的颗粒的TFT被运行。根据本发明，在成形进行玻璃基板上的非晶硅层，热处理等，将非晶硅层转换为多晶硅层。此时，在玻璃基板中的异物的影响下，在多晶硅层中产生具有异常晶粒直径的粒子，并且可能形成具有不同阈值的TFT。在这种情况下，当用激光束照射具有异常晶粒直径的颗粒成为颗粒并且在其周围提供高电阻时，防止具有不同阈值的TFT被操作，并且泄漏电流在原始TFT的关闭状态期间不流动，从而提高显示特性。

54. 植物专利

USPP11466P Zoysia grass plant named `SS-500` 失效
公开(公告)号：USPP11466P
公开(公告)日：2000-08-01
申请号：US31492
申请日：1998-02-26
申请人： Minoru Ito , Roberto Guerra Amaral Gurgel
发明人： Minoru Ito , Roberto Guerra Amaral Gurgel
摘要： A new and distinct variety of Zoysia japonica turfgrass, called `SS-500`, is characterized by its color, long and wide leaf blades, large stolons, an open growth habit, and rapid establishment rate.

55. 发明授权

US11725556B2 Exhaust gas purification catalyst 有权
公开(公告)号：US11725556B2
公开(公告)日：2023-08-15
申请号：US17682646
申请日：2022-02-28
申请人： Isao Chinzei , Takumi Tojo , Takahiro Nishio , Yosuke Toda , Hirotaka Ori , Minoru Ito , Sho Hoshino
发明人： Isao Chinzei , Takumi Tojo , Takahiro Nishio , Yosuke Toda , Hirotaka Ori , Minoru Ito , Sho Hoshino
IPC分类号： B01J21/04 , B01J21/06 , B01J23/02 , B01J23/10 , B01J23/42 , B01J23/44 , B01J23/46 , B01J23/56 , B01J23/58 , B01J23/63 , B01J35/04 , F01N3/10
CPC分类号： F01N3/105 , B01J21/04 , B01J21/066 , B01J23/10 , B01J23/42 , B01J23/44 , B01J23/464 , F01N3/101 , F01N2330/02 , F01N2370/02 , F01N2430/06
摘要： Provided is an exhaust gas purification catalyst having an improved catalyst performance while securing an OSC in an air-fuel ratio (A/F) rich atmosphere where HC poisoning is likely to occur. The present disclosure relates to an exhaust gas purification catalyst including a substrate and a catalyst coating layer coated on the substrate. The catalyst coating layer has an upstream coat layer formed from an end portion in an upstream side with respect to an exhaust gas flow direction in the exhaust gas purification catalyst and a downstream coat layer formed from an end portion in a downstream side with respect to the exhaust gas flow direction in the exhaust gas purification catalyst. The downstream coat layer includes Rh as a catalytic metal, alumina-ceria-zirconia complex oxide, and alkaline earth metal.

56. 发明授权

US08826935B2 Gas flow monitoring system 有权
标题翻译：气体流量监测系统
公开(公告)号：US08826935B2
公开(公告)日：2014-09-09
申请号：US13602719
申请日：2012-09-04
申请人： Akiko Nakada , Yoji Mori , Naoya Shiroyama , Minoru Ito
发明人： Akiko Nakada , Yoji Mori , Naoya Shiroyama , Minoru Ito
IPC分类号： F16K31/02 , G05D7/06 , G01F1/00
CPC分类号： G05D7/0635 , G01F1/00 , Y10T137/7759 , Y10T137/7761 , Y10T137/87917
摘要： A gas flow monitoring system is provided in process gas lines each arranged to supply gas to a predetermined process chamber via a flow control device, the system being configured to measure lowering or rising of gas pressure before and after the flow control device to monitor a flow rate of the flow control device. The system includes a first flow monitoring unit placed upstream of the flow control device in a selected one of the process gas lines, a second flow monitoring unit placed in a discharge passage upstream of the process chamber, and a controller that constantly monitors the flow rate of the flow control device with the first flow monitoring unit and, when the first flow monitoring unit detects the flow-rate abnormality two or more times, commands the second flow monitoring unit to re-verify whether flow-rate abnormality is present or not in the flow control device.
摘要翻译：气体流量监测系统设置在处理气体管线中，每个气体管线布置成经由流量控制装置将气体供应到预定的处理室，该系统被配置为测量流量控制装置之前和之后的气体压力的下降或上升以监测流量流量控制装置的速率。该系统包括：第一流量监测单元，其位于处理气体管线中所选择的一个流量控制装置的上游，放置在处理室上游的排放通道中的第二流量监测单元，以及不断监测流量的控制器的流量控制装置，并且当第一流量监视单元检测到流量异常两次以上时，命令第二流量监视单元重新验证流量异常是否存在于流量控制装置。

57. 发明授权

US08349397B2 Plastic lens, manufacturing method thereof, and manufacturing method of hard coat liquid 有权
标题翻译：塑料透镜及其制造方法以及硬涂液的制造方法
公开(公告)号：US08349397B2
公开(公告)日：2013-01-08
申请号：US12474823
申请日：2009-05-29
申请人： Hiroshi Kojima , Tsuyoshi Sakurazawa , Minoru Ito
发明人： Hiroshi Kojima , Tsuyoshi Sakurazawa , Minoru Ito
IPC分类号： B05D5/06
CPC分类号： G02B1/14 , G02B1/105 , G02B1/11 , Y10T428/2495 , Y10T428/31663
摘要： A manufacturing method of plastic lens includes the steps of: preparing a first liquid containing at least one metal oxide and a second liquid containing at least one organosilicon compound; manufacturing a hard coat liquid by mixing the first liquid and the second liquid so that the mass ratio of the solid content of the first liquid to the solid content of second liquid falls within a range of 45/55 to 65/35; and coating the hard coat liquid on a plastic lens substrate to form a hard coat film and then curing the hard coat film.
摘要翻译：塑料透镜的制造方法包括以下步骤：制备含有至少一种金属氧化物的第一液体和含有至少一种有机硅化合物的第二液体; 通过混合第一液体和第二液体来制造硬涂层液体，使得第一液体的固体含量与第二液体的固体含量的质量比落在45/55至65/35的范围内; 并将硬涂层涂布在塑料透镜基板上以形成硬涂膜，然后固化硬涂膜。

58. 发明授权

US07994842B2 Semiconductor integrated circuit apparatus and electronic apparatus 有权
标题翻译：半导体集成电路装置及电子设备
公开(公告)号：US07994842B2
公开(公告)日：2011-08-09
申请号：US12482044
申请日：2009-06-10
申请人： Minoru Ito
发明人： Minoru Ito
IPC分类号： H01J19/82 , H02M7/00
CPC分类号： H03K19/00384
摘要： Semiconductor integrated circuit apparatus and electronic apparatus having a leakage current detection circuit where arbitrarily set leakage current detection ratio does not depend on power supply voltage, temperature, or manufacturing variations, and where leakage current detection is straightforward. Semiconductor integrated circuit apparatus extracts a stable potential from the center of two NchMIS transistors, amplifies drain current of an NchMOS transistor taking this potential as a gate potential to a current value of an arbitrary ratio using current mirror circuit, makes this current value flow through NchMOS transistor with the gate and drain connected, and applies drain potential of this NchMOS transistor to the gate of leakage current detection NchMOS transistor.
摘要翻译：具有泄漏电流检测电路的半导体集成电路装置和电子设备，其中任意设置的漏电流检测率不依赖于电源电压，温度或制造变化，并且其中泄漏电流检测是直接的。半导体集成电路装置从两个NchMIS晶体管的中心提取稳定电位，使用电流镜电路将NchMOS晶体管的漏极电流放大到任意比例的电流值，使该电位作为栅极电位，使该电流值流过NchMOS 晶体管与栅极和漏极连接，并将NchMOS晶体管的漏极电压施加到漏电流检测NchMOS晶体管的栅极。

59. 发明申请

US20100247956A1 ZN ALLOY PARTICLES FOR HIGH CORROSION RESISTANCE RUST PROTECTION PAINT, METHOD OF PRODUCTION OF PARTICLES, HIGH CORROSION RESITANCE RUST PROTECTION PAINT CONATINING PARTICLES, HIGH CORROSION RESISTANCE STEEL MATERIAL COATED WITH PAINT, AND STEEL STRUCTURE HAVING STEEL MATERIAL 有权
标题翻译：用于高耐腐蚀性保护涂料的ZN合金颗粒，生产颗粒的方法，高耐腐蚀性防腐涂料粘合颗粒，涂有耐腐蚀性高的钢材料和钢材的钢结构
公开(公告)号：US20100247956A1
公开(公告)日：2010-09-30
申请号：US12310574
申请日：2007-09-07
申请人： Kenji Katoh , Makoto Nagasawa , Minoru Ito , Michio Kaneko , Shiro Imai , Masatoshi Kominami , Toshiro Terakawa , Takashi Kumai
发明人： Kenji Katoh , Makoto Nagasawa , Minoru Ito , Michio Kaneko , Shiro Imai , Masatoshi Kominami , Toshiro Terakawa , Takashi Kumai
IPC分类号： B32B15/18 , C22C18/00 , C22C18/04 , B22F9/04 , B22F1/00 , C09D5/08
CPC分类号： C22C18/00 , B22F1/0007 , B22F1/025 , B22F9/04 , B22F2998/00 , C08K3/08 , C08K2201/016 , C09D5/106 , C09D7/67 , C09D7/68 , C09D7/69 , C09D7/70 , C22C1/0483 , C22C18/04 , Y10T428/12028 , Y10T428/12792 , Y10T428/12799 , B22F1/0059 , C09D5/10
摘要： Zn alloy particles for high corrosion resistance rust prevention paint containing, by mass %, Mg: 0.01 to 30% and having a balance of Zn and unavoidable impurities, having physical fracture facets and/or cracks of a length of 0.01 μm or more or cracks of a depth of 0.01 μm or more, having an average particle size of 0.05 to 200 μm, and having an aspect ratio of maximum size and minimum size (maximum size/minimum size) of an average value of 1 to 1.5. Also, a high corrosion resistance rust prevention paint containing these Zn alloy particles and a high corrosion resistance steel material and steel structure coated with that paint.
摘要翻译：用于高耐蚀性防锈漆的Zn合金颗粒，以质量％计含有0.01％以上的物理断裂面和/或裂纹的Mg：0.01〜30％，余量为Zn和不可避免的杂质，或者裂纹平均粒径为0.05〜200μm的深度为0.01μm以上，并且具有平均值为1〜1.5的最大尺寸和最小尺寸（最大尺寸/最小尺寸）的纵横比。另外，含有这些Zn合金粒子的高耐腐蚀性防锈油漆和涂有该油漆的高耐腐蚀钢材和钢结构。

60. 发明申请

US20100028658A1 Hihgly corrosion-resistant, rust-prevention coating material, highly corrosion-resistant steel, and steel structure 有权
标题翻译： Hihgly耐腐蚀，防锈涂料，高耐腐蚀钢和钢结构
公开(公告)号：US20100028658A1
公开(公告)日：2010-02-04
申请号：US12311455
申请日：2007-09-26
申请人： Makoto Nagasawa , Minoru Ito , Michio Kaneko , Kenji Katoh , Shiro Imai , Masatoshi Kominami , Toshiro Terakawa , Takashi Kumai
发明人： Makoto Nagasawa , Minoru Ito , Michio Kaneko , Kenji Katoh , Shiro Imai , Masatoshi Kominami , Toshiro Terakawa , Takashi Kumai
IPC分类号： B32B15/04 , C23F11/00 , B32B5/16
CPC分类号： C09D5/106 , Y10T428/12028 , Y10T428/12792 , Y10T428/12799 , Y10T428/256 , Y10T428/265
摘要： A highly corrosion-resistant, rust-prevention coating material comprising: an inorganic binder; and Zn metal particles comprised of Zn and unavoidable impurities and dispersed in the binder at the rate of 30 mass % or greater based on a dry coating film, wherein (i) the Zn metal particles include (i-1) fine-grain Zn metal particles of 0.05 to 5 μm peak grain diameter whose grain-diameter distribution has a grain-diameter frequency distribution with a single peak and a tail on either side of the peak and (i-2) coarse-grain Zn metal particles of 6 to 100 μm peak grain diameter whose grain-diameter distribution has a grain-diameter frequency distribution with another single peak and a tail on either side of the peak, and wherein (ii) the percentage of all Zn metal particles accounted for by Zn metal particles of 0.05 to 5 μm grain diameter expressed in volume percentage is 5 to 99%.
摘要翻译：一种高度耐腐蚀的防锈涂料，包括：无机粘合剂; 和由Zn和不可避免的杂质构成的Zn金属粒子，以干质涂膜为30质量％以上的速度分散在粘合剂中，其中（i）Zn金属粒子包括（i-1）细晶粒Zn金属颗粒直径分布具有峰值频率分布，峰值和（i-2）粗粒度Zn金属颗粒两侧的单峰和尾部为6〜100的粒径分布为0.05〜5μm的峰粒径其粒径分布具有与峰的任一侧上的另一单峰和尾部的粒径频率分布的母体峰粒径，并且其中（ii）Zn金属颗粒占所有Zn金属颗粒的百分比为0.05 以5体积百分比表示的5粒子粒径为5〜99％。

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