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51. 发明申请

US20090113684A1 Uniformly Compressed Process Chamber Gate Seal for Semiconductor Processing Chamber 审中-公开
标题翻译：用于半导体加工室的均匀压缩过程室门密封
公开(公告)号：US20090113684A1
公开(公告)日：2009-05-07
申请号：US12253716
申请日：2008-10-17
申请人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
发明人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
IPC分类号： H01L21/67
CPC分类号： H01L21/67126
摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.
摘要翻译：描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。开口至少有一个角角。门系统包括门，致动器和密封构件。门可以在平面上移动，并且具有至少一个成角度的角以将门与开口对齐。致动器移动门以选择性地打开和关闭开口。当门处于关闭位置时，密封构件密封开口。门的尺寸适于在处于关闭位置时对密封构件施加基本均匀的密封压缩。

52. 发明授权

US06793766B2 Apparatus having platforms positioned for precise centering of semiconductor wafers during processing 失效
标题翻译：具有平台的设备，用于在处理期间精确地对准半导体晶片
公开(公告)号：US06793766B2
公开(公告)日：2004-09-21
申请号：US09755516
申请日：2001-01-04
申请人： Eric W. Schieve , Lawrence Chung-Lai Lei
发明人： Eric W. Schieve , Lawrence Chung-Lai Lei
IPC分类号： C23F100
CPC分类号： H01L21/68 , C23C16/54 , H01L21/67126 , H01L21/67742 , Y10S414/135
摘要： Apparatus for processing multiple semiconductor wafers, includes a transfer chamber, a first processing chamber mounted in fixed relation to the transfer chamber and having a first wafer-holding platform with a center, a second processing chamber mounted in adjustable relation to the transfer chamber and to the first chamber and having a second wafer-holding platform with a center, and a robot rotatably mounted within the transfer chamber and having first and second wafer-holding arms spaced parallel to each other for inserting a pair of wafers simultaneously into the first and second chambers and for placing the wafers accurately centered over the respective platforms. The spacing of the platform centers is adjusted relative to the spacing of the robot arms such that the wafers are centered and placed with a preselected degree of accuracy onto the respective platforms for efficient processing of the wafers.
摘要翻译：用于处理多个半导体晶片的设备包括传送室，第一处理室，其以固定关系安装到传送室，并具有带有中心的第一晶片保持平台，第二处理室以可调节的关系安装在传送室上，第一腔室和具有中心的第二晶片保持平台，以及可旋转地安装在传送室内的机器，并且具有彼此平行间隔开的第一和第二晶片保持臂，用于将一对晶片同时插入到第一和第二腔中并且用于将晶片准确地放置在各个平台上居中。平台中心的间距相对于机器人臂的间距进行调节，使得晶片居中并以预选的精确度放置在相应的平台上以有效地处理晶片。

53. 发明授权

US06494955B1 Ceramic substrate support 有权
标题翻译：陶瓷基板支撑
公开(公告)号：US06494955B1
公开(公告)日：2002-12-17
申请号：US09596854
申请日：2000-06-19
申请人： Lawrence Chung-Lai Lei , Sal Umotoy , Xiaoxiong Yuan , Anzhong Chang , Hongbee Teoh , Anh N. Nguyen , Ron Rose
发明人： Lawrence Chung-Lai Lei , Sal Umotoy , Xiaoxiong Yuan , Anzhong Chang , Hongbee Teoh , Anh N. Nguyen , Ron Rose
IPC分类号： H01L21205
CPC分类号： C23C16/45521 , C23C16/4581 , C23C16/4586 , H01L21/67017 , H01L21/68721 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792
摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate having a first side and an embedded electrode, the first side of the bottom plate fused to the first side of the top plate defining a channel therebetween. In another embodiment, a support assembly includes a first plate having a first side and second side. A ring is disposed on the first side. A stepped surface is formed on the first side radially inward of the ring. A second plate is connected to the second side of the first plate.
摘要翻译：提供了一种用于在处理期间支撑基板的基板支撑组件。在一个实施例中，支撑组件包括具有第一侧的顶部陶瓷板，具有第一侧和嵌入电极的底部陶瓷板，底板的与顶板的第一侧熔合的第一侧在其间限定通道。在另一个实施例中，支撑组件包括具有第一侧面和第二侧面的第一板。环设在第一侧。在环的径向内侧的第一侧上形成台阶面。第二板连接到第一板的第二侧。

54. 发明授权

US6159299A Wafer pedestal with a purge ring 有权
标题翻译：晶圆座与清洗环
公开(公告)号：US6159299A
公开(公告)日：2000-12-12
申请号：US247673
申请日：1999-02-09
申请人： Keith K. Koai , Lawrence Chung-Lai Lei , Russell C. Ellwanger
发明人： Keith K. Koai , Lawrence Chung-Lai Lei , Russell C. Ellwanger
IPC分类号： H01L21/68 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/285 , H01L21/31 , H01L21/3205 , H01L21/687 , H01L23/52 , C23C16/00 , H04H1/00
CPC分类号： C23C16/45521 , C23C16/4583 , H01L21/67017 , H01L21/68735
摘要： A wafer pedestal with a purge ring that circumscribes a peripheral edge of the wafer pedestal. The purge ring contains plurality of passages that are located proximate the peripheral edge of said wafer pedestal such that purge gas is directed towards the peripheral edge. Additionally, the purge ring cooperates with an edge ring assembly that circumscribes the purge ring. The purge ring and the edge ring assembly allow a dual-purge flow pattern to be established, which significantly reduces the accumulation of undesirable deposits upon the wafer pedestal.
摘要翻译：具有环绕圆片基座的周缘的清洗环的晶片基座。清洗环包含位于所述晶片基座的周缘附近的多个通道，使得净化气体被引向周边边缘。此外，清洗环与限定清洗环的边缘环组件配合。清洗环和边缘环组件允许建立双清洗流动模式，这显着地减少了不期望的沉积物在晶片基座上的积聚。

55. 发明授权

US5935338A Chemical vapor deposition chamber 失效
公开(公告)号：US5935338A
公开(公告)日：1999-08-10
申请号：US606267
申请日：1996-02-23
申请人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

56. 发明授权

US5705080A Plasma-inert cover and plasma cleaning process 失效
标题翻译：等离子惰性盖和等离子体清洗工艺
公开(公告)号：US5705080A
公开(公告)日：1998-01-06
申请号：US271134
申请日：1994-07-06
申请人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
发明人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
IPC分类号： C30B33/12 , C23C16/44 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , H01J2237/022 , Y10S438/905
摘要： A process for removing deposits from within a space at least partially delimited by a surface which is subject to attack from a plasma includes the steps of placing on the surface a cover comprising a material which is inert to the plasma, and then removing the deposits.
摘要翻译：用于从至少部分地由等离子体侵蚀的表面界定的空间内去除沉积物的方法包括以下步骤：在表面上放置包含对等离子体是惰性的材料的盖子，然后去除沉积物。

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