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51. 发明申请

US20130134876A1 MOVABLE GROUNDING ARRANGEMENTS IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR 有权
标题翻译：等离子体加工室中的可移动接地装置及其方法
公开(公告)号：US20130134876A1
公开(公告)日：2013-05-30
申请号：US13616641
申请日：2012-09-14
申请人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： H05H1/24 , H05K13/00
CPC分类号： H01J37/32082 , H01J37/32577
摘要： A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.
摘要翻译：一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件加上地面。等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

52. 发明申请

US20130127476A1 SYSTEM, METHOD AND APPARATUS FOR DETECTING DC BIAS IN A PLASMA PROCESSING CHAMBER 有权
标题翻译：用于检测等离子体处理室中的直流偏置的系统，方法和装置
公开(公告)号：US20130127476A1
公开(公告)日：2013-05-23
申请号：US13301580
申请日：2011-11-21
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ken Lucchesi
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ken Lucchesi
IPC分类号： G01R27/28
CPC分类号： H01J37/32532 , H01J37/32568 , H01J37/32577 , H01J37/32706
摘要： A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and electrostatic chuck. The wafer is supported on the top surface of an electrostatic chuck. The self bias DC voltage is developed on the wafer. A vibrating electrode is oscillated to produce a variable capacitance, the vibrating electrode is located in the electrostatic chuck. An electrical current is developed in a sensor circuit. An output voltage is measured across a sampling resistor in the sensor circuit, a second DC potential is applied to the vibrating electrode to nullify the output voltage. The second DC potential is equal to the self bias DC voltage on the wafer.
摘要翻译：测量等离子体室中的半导体晶片上的自偏压DC电压的系统和方法包括在等离子体室中的顶电极和静电卡盘的顶表面之间产生等离子体，包括将一个或多个RF信号施加到一个或两个的顶部电极和静电吸盘。晶片被支撑在静电卡盘的顶表面上。在晶圆上开发出自偏压直流电压。振动电极振荡以产生可变电容，振动电极位于静电卡盘中。在传感器电路中产生电流。在传感器电路中的采样电阻两端测量输出电压，向振动电极施加第二个直流电位，使输出电压无效。第二直流电位等于晶片上的自偏压直流电压。

53. 发明申请

US20120312475A1 APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMA 有权
标题翻译：用于处理使用等离子体的基板的装置
公开(公告)号：US20120312475A1
公开(公告)日：2012-12-13
申请号：US13526391
申请日：2012-06-18
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , G03F7/427 , H01J37/32091 , H01J37/32128 , H01J37/32165 , H01J37/32532 , H01L21/306 , H01L21/31138
摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.
摘要翻译：提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给上电极。

54. 发明申请

US20120000605A1 CONSUMABLE ISOLATION RING FOR MOVABLE SUBSTRATE SUPPORT ASSEMBLY OF A PLASMA PROCESSING CHAMBER 有权
标题翻译：等离子体加工室的可移动基板支撑组件的消耗隔离环
公开(公告)号：US20120000605A1
公开(公告)日：2012-01-05
申请号：US12828098
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34 , H01L21/306
CPC分类号： H05K5/0247 , C23C16/4585 , H01B5/04 , H01J37/32091 , H01J37/32495 , H01J37/32623 , H01J37/32642 , H01J37/32733 , H01L21/68735
摘要： A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly.
摘要翻译：描述可移动基板支撑组件的可消耗隔离环。消耗性隔离环被配置为支撑在固定接地环周围的可动接地环的台阶上。消耗性隔离环被构造成将可移动接地环与可移动衬底支撑组件的介质环电隔离。

55. 发明授权

US07837827B2 Edge ring arrangements for substrate processing 有权
标题翻译：用于衬底加工的边缘环布置
公开(公告)号：US07837827B2
公开(公告)日：2010-11-23
申请号：US11770658
申请日：2007-06-28
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01L21/6732 , H01J37/32091 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并被第一边缘环包围。第一边缘环与卡盘电隔离。该方法包括提供第二边缘环。第二边缘环设置在基板的边缘下方。该方法还包括提供耦合环。联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化在基板处理期间在第二边缘环处环形并最小化。

56. 发明申请

US20080160776A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体增强基板加工方法和装置
公开(公告)号：US20080160776A1
公开(公告)日：2008-07-03
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov
IPC分类号： H01L21/461
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

57. 发明授权

US09171702B2 Consumable isolation ring for movable substrate support assembly of a plasma processing chamber 有权
标题翻译：用于等离子体处理室的可移动衬底支撑组件的消耗性隔离环
公开(公告)号：US09171702B2
公开(公告)日：2015-10-27
申请号：US12828098
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/458
CPC分类号： H05K5/0247 , C23C16/4585 , H01B5/04 , H01J37/32091 , H01J37/32495 , H01J37/32623 , H01J37/32642 , H01J37/32733 , H01L21/68735
摘要： A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly.
摘要翻译：描述可移动基板支撑组件的可消耗隔离环。消耗性隔离环被配置为支撑在固定接地环周围的可动接地环的台阶上。消耗性隔离环被构造成将可移动接地环与可移动衬底支撑组件的介质环电隔离。

58. 发明授权

US09111731B2 Gas feed insert in a plasma processing chamber and methods therefor 有权
标题翻译：在等离子体处理室中的气体进料插入件及其方法
公开(公告)号：US09111731B2
公开(公告)日：2015-08-18
申请号：US13616571
申请日：2012-09-14
申请人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： B23K10/00 , H01J37/32
CPC分类号： H01J37/3244 , Y10T29/49002
摘要： A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end.
摘要翻译：气体供给插入件，其构造成设置在通过电极组件的通道中，该电极组件包括具有与气体进料插入件的线性轴线平行排列的第一孔的第一插入端。气体进料插入件还包括与第一插入件端相对的第二插入端，第二插入端具有其中与气体进料插入件的线性轴线平行排列的第二孔，以及与气体流动连通的孔对孔连通通道，第一个孔和第二个孔。孔对孔连通通道形成在气体进料插入件的外表面中，以便当气体从第一插入件端部通过孔到孔连通流动到第二插入件时防止视线结束。

59. 发明授权

US08872525B2 System, method and apparatus for detecting DC bias in a plasma processing chamber 有权
标题翻译：用于检测等离子体处理室中的直流偏压的系统，方法和装置
公开(公告)号：US08872525B2
公开(公告)日：2014-10-28
申请号：US13301580
申请日：2011-11-21
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ken Lucchesi
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ken Lucchesi
IPC分类号： G01R27/28 , G01R27/26 , G01R31/26 , H01J37/32
CPC分类号： H01J37/32532 , H01J37/32568 , H01J37/32577 , H01J37/32706
摘要： A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and electrostatic chuck. The wafer is supported on the top surface of an electrostatic chuck. The self bias DC voltage is developed on the wafer. A vibrating electrode is oscillated to produce a variable capacitance, the vibrating electrode is located in the electrostatic chuck. An electrical current is developed in a sensor circuit. An output voltage is measured across a sampling resistor in the sensor circuit, a second DC potential is applied to the vibrating electrode to nullify the output voltage. The second DC potential is equal to the self bias DC voltage on the wafer.
摘要翻译：测量等离子体室中的半导体晶片上的自偏压DC电压的系统和方法包括在等离子体室中的顶电极和静电卡盘的顶表面之间产生等离子体，包括将一个或多个RF信号施加到一个或两个的顶部电极和静电吸盘。晶片被支撑在静电卡盘的顶表面上。在晶圆上开发出自偏压直流电压。振动电极振荡以产生可变电容，振动电极位于静电卡盘中。在传感器电路中产生电流。在传感器电路中的采样电阻两端测量输出电压，向振动电极施加第二个直流电位，使输出电压无效。第二直流电位等于晶片上的自偏压直流电压。

60. 发明申请

US20130206337A1 ARRANGEMENTS FOR CONTROLLING PLASMA PROCESSING PARAMETERS 审中-公开
标题翻译：控制等离子体处理参数的安排
公开(公告)号：US20130206337A1
公开(公告)日：2013-08-15
申请号：US13524142
申请日：2012-06-15
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B05C13/02 , C23C16/505
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32568 , H01J37/32577
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and is surrounded by an edge ring, the edge ring being electrically isolated from the chuck. The plasma processing system includes a first RF power supply for providing a first RF power to the chuck. The plasma processing system also includes an edge ring RF voltage control arrangement which is coupled to the edge ring to provide second RF power to the edge ring. The plasma processing chamber is configured to strike plasma to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate while processing the substrate.
摘要翻译：提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。基板设置在卡盘上方并被边缘环包围，边缘环与卡盘电隔离。等离子体处理系统包括用于向卡盘提供第一RF功率的第一RF电源。等离子体处理系统还包括边缘环RF电压控制装置，其耦合到边缘环以向边缘环提供第二RF功率。等离子体处理室配置成打击等离子体以处理衬底，衬底正在被处理，而边缘环RF电压控制装置被配置为控制到边缘环的第二RF功率，使得在边缘环之间保持预定的电位差和基板，同时处理基板。

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