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51. 发明授权

US07274080B1 MgO-based tunnel spin injectors 失效
标题翻译：基于MgO的隧道旋转注射器
公开(公告)号：US07274080B1
公开(公告)日：2007-09-25
申请号：US10969735
申请日：2004-10-19
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L29/66984 , Y10S977/933
摘要： A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.
摘要翻译： MgO隧道势垒夹在一侧的半导体材料和另一侧的铁和/或铁磁材料之间以形成自旋电子元件。半导体材料可以包括例如GaAs。自旋电子元件可以通过将电荷载体从磁性材料注入到MgO隧道势垒中，然后进入半导体中而用作自旋注入装置。类似地，自旋电子元件可以用作自旋极化电荷载流子的检测器或分析器，这是通过将载流子从半导体层的表面流过MgO隧道屏障并进入（铁或铁）磁性材料作为检测器。 MgO隧道势垒优选通过在底层（例如铁磁性层）上形成Mg层，然后在氧的存在下将另外的Mg引向底层来形成。

52. 发明授权

US07149105B2 Magnetic tunnel junctions for MRAM devices 有权
标题翻译： MRAM器件的磁隧道结
公开(公告)号：US07149105B2
公开(公告)日：2006-12-12
申请号：US10785913
申请日：2004-02-24
申请人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
发明人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
IPC分类号： G11C11/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L43/08 , G11C11/15
摘要： Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
摘要翻译：制造MTJ记忆单元的方法及其结构。在反铁磁层和MTJ存储单元的被钉扎层之间设置扩散阻挡层，以改善MTJ存储单元的热稳定性。扩散阻挡层可以包括无定形材料或NiFe合金。无定形材料可以设置在隧道结的底表面附近，在自由层内或两者之间。实现了具有改进的热稳定性和降低的Neel耦合的MTJ存储单元。

53. 发明授权

US06197439B1 Laminated magnetic structures with ultra-thin transition metal spacer layers 失效
标题翻译：具有超薄过渡金属间隔层的层压磁结构
公开(公告)号：US06197439B1
公开(公告)日：2001-03-06
申请号：US09238714
申请日：1999-01-28
申请人： Stuart Stephen Papworth Parkin , David Allen Thompson
发明人： Stuart Stephen Papworth Parkin , David Allen Thompson
IPC分类号： B32B1500
CPC分类号： B82Y25/00 , B32B15/01 , B32B15/013 , B32B15/018 , B82Y10/00 , G11B5/3109 , G11B5/3113 , G11B5/3156 , G11B5/332 , G11B5/3916 , G11B2005/3996 , H01F10/3272 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12861 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951
摘要： Non-magnetic transition metal spacer layers 2.5 to 50 Angstroms thick with compositions of Os, Ru and Re are used in laminated magnetic structures. The ultra-thin non-magnetic transition metal spacer layers are useful to fabricate micron and sub-micron laminated magnetic devices. The laminated magnetic structures using ultra-thin non-magnetic transition metal spacer layers of Os, Ru and Re have anti-ferromagnetic coupling between the magnetic layers. The anti-ferromagnetic coupling provides a mechanism for reduced edge curling and efficient directional magnetization. Alloying the non-magnetic transition metal layer provides a method for engineering coupling strengths, coercivities and remanences in magnetic structures useful for high frequency applications. These laminated magnetic structure have applications in magnetic read head, magnetic write head, magnetic memory, and miniature transformer devices.
摘要翻译： 2.5〜50埃厚的Os，Ru和Re组成的非磁性过渡金属间隔层用于层叠磁性结构。超薄非磁性过渡金属间隔层可用于制造微米和亚微米层压磁性器件。使用Os，Ru和Re的超薄非磁性过渡金属间隔层的层压磁性结构在磁性层之间具有反铁磁耦合。反铁磁耦合提供了减少边缘卷曲和有效定向磁化的机制。合金化非磁性过渡金属层提供了一种在高频应用中有用的磁结构中强化耦合强度，矫顽力和剩磁的方法。这些层压磁结构具有磁读头，磁写头，磁存储器和微型变压器装置的应用。

54. 发明授权

US5966012A Magnetic tunnel junction device with improved fixed and free ferromagnetic layers 失效
标题翻译：具有改进的固定和自由铁磁层的磁隧道结装置
公开(公告)号：US5966012A
公开(公告)日：1999-10-12
申请号：US947282
申请日：1997-10-07
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L43/08 , G01R33/02
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3295
摘要： An improved magnetic tunnel junction (MTJ) device for use in a magnetic recording read head or in a magnetic memory storage cell is comprised of two ferromagnetic layers, a "hard" or "fixed" ferromagnetic layer and a sensing or "free" ferromagnetic layer, which are separated by a thin insulating tunneling layer. Each of the ferromagnetic layers is a multilayer formed from two thinner ferromagnetic films coupled antiferromagnetically to one another across a thin antiferromagnetically coupling film. The antiferromagnetically coupling film is chosen, with regard to material composition and thickness, so that it causes the two ferromagnetic films which sandwich it to have their magnetic moments arranged antiparallel to one other in the absence of external magnetic fields. The magnetic moments of the fixed ferromagnetic multilayer and free ferromagnetic layer can be chosen to be arbitrarily small by making the two ferromagnetic films comprising each of them to have substantially the same magnetic moment. Thus the dipole fields from each of the fixed and free ferromagnetic multilayers can be minimized, thereby reducing the magnetic interaction between the fixed ferromagnetic multilayer and the free ferromagnetic multilayer.
摘要翻译：用于磁记录读取头或磁存储器存储单元的改进的磁隧道结（MTJ）装置由两个铁磁层，“硬”或“固定”铁磁层和感测或“自由”铁磁层，它们被薄的绝缘隧道层分开。每个铁磁层是由两个较薄的铁磁膜形成的多层，其通过薄的反铁磁耦合膜彼此反铁磁耦合。选择反铁磁耦合膜，关于材料组成和厚度，使得它使夹着它的两个铁磁膜在没有外部磁场的情况下使它们的磁矩反向平行布置。通过使包含它们中的每一个的两个铁磁膜具有基本上相同的磁矩，可以选择固定铁磁多层和自由铁磁层的磁矩任意小。因此，可以使来自固定和自由铁磁多层膜的偶极场最小化，从而减少固定铁磁性多层和自由铁磁性多层之间的磁相互作用。

55. 发明授权

US5650958A Magnetic tunnel junctions with controlled magnetic response 失效
标题翻译：具有受控磁响应的磁隧道结
公开(公告)号：US5650958A
公开(公告)日：1997-07-22
申请号：US618300
申请日：1996-03-18
申请人： William Joseph Gallagher , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Jonathan Zanhong Sun
发明人： William Joseph Gallagher , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Jonathan Zanhong Sun
IPC分类号： G01R33/06 , G01R33/09 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/15 , G11C11/16 , G11B2005/3996
摘要： A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is pinned by interfacial exchange coupling with an adjacent antiferromagnetic layer. The amount of tunneling current that flows perpendicularly through the two ferromagnetic layers and the intermediate tunnel barrier layer depends on the relative magnetization directions of the two ferromagnetic layers. The ferromagnetic layers are formed in two separate spaced-apart planes that do not overlap in the region of the tunnel barrier layer, thereby eliminating any extraneous magnetic poles.
摘要翻译：磁性隧道结（MTJ）装置可用作磁场传感器或磁性随机存取（MRAM）阵列中的存储单元。 MTJ装置具有“钉扎”铁磁层，其磁化取向于该层的平面，但固定为在存在感兴趣范围内的施加磁场的情况下不能旋转，“自由”铁磁其磁化能够相对于被钉扎的铁磁层的固定磁化在层的平面中旋转，以及位于两个铁磁层之间并与两个铁磁层接触的绝缘隧道势垒层。被钉扎的铁磁层通过与相邻反铁磁层的界面交换耦合来固定。垂直于两个铁磁层和中间隧道势垒层流动的隧道电流的量取决于两个铁磁层的相对磁化方向。铁磁层形成在隧道势垒层的区域中不重叠的两个分开的间隔开的平面，从而消除任何外来的磁极。

56. 发明授权

US08861262B2 Spin-current switchable magnetic memory element and method of fabricating the memory element 有权
标题翻译：旋转电流可切换磁存储元件及其制造方法
公开(公告)号：US08861262B2
公开(公告)日：2014-10-14
申请号：US13619588
申请日：2012-09-14
申请人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
发明人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161
摘要： A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
摘要翻译：自旋电流可切换磁存储元件包括包括垂直磁各向异性分量的多个磁性层，所述多个磁性层中的至少一个包括稀土金属和过渡金属的合金，以及至少一个势垒层形成为与所述多个磁性层中的至少一个相邻。

57. 发明授权

US08673791B2 Method and apparatus for substrate-mask alignment 有权
标题翻译：用于基板掩模对准的方法和装置
公开(公告)号：US08673791B2
公开(公告)日：2014-03-18
申请号：US13480831
申请日：2012-05-25
申请人： David J. Altknecht , Robert E. Erickson , Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Samant
发明人： David J. Altknecht , Robert E. Erickson , Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Samant
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/042 , H01L21/02636
摘要： A shadow masking device for use in the semiconductor industry includes self-aligning mechanical components that permit shadow masks to be exchanged while maintaining precise alignment with the target substrate. The misregistration between any two of the various layers in the formed structure can be kept to less than 40 microns.
摘要翻译：用于半导体工业的阴影掩蔽装置包括自对准机械部件，其允许在保持与目标基板的精确对准的同时更换荫罩。形成的结构中的各层之间的任何两个之间的对准可以保持在小于40微米。

58. 发明授权

US08558332B2 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element 有权
标题翻译：适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法
公开(公告)号：US08558332B2
公开(公告)日：2013-10-15
申请号：US13041226
申请日：2011-03-04
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
摘要翻译：制造自旋电流切换磁存储元件的方法包括提供具有底部电极的晶片，形成多个层，使得多个层之间的界面原位形成，其中多个层包括多个层所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层，从所述多个磁性层中光刻地限定了柱结构的层，并且在柱结构上形成顶部电极。

59. 发明申请

US20130009261A1 SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRICATING THE MEMORY ELEMENT 有权
标题翻译：旋转电流可切换磁记忆元件和制作记忆元件的方法
公开(公告)号：US20130009261A1
公开(公告)日：2013-01-10
申请号：US13619588
申请日：2012-09-14
申请人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
发明人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161
摘要： A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
摘要翻译：自旋电流可切换磁存储元件包括包括垂直磁各向异性分量的多个磁性层，所述多个磁性层中的至少一个包括稀土金属和过渡金属的合金，以及至少一个势垒层形成为与所述多个磁性层中的至少一个相邻。

60. 发明授权

US08310863B2 Spin-current switchable magnetic memory element and method of fabricating the memory element 有权
标题翻译：旋转电流可切换磁存储元件及其制造方法
公开(公告)号：US08310863B2
公开(公告)日：2012-11-13
申请号：US13020925
申请日：2011-02-04
申请人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
发明人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/161
摘要： A method of fabricating a magnetic memory element includes forming a plurality of magnetic layers having a perpendicular magnetic anisotropy component, in which the plurality of magnetic layers includes a first magnetic layer having an alloy of a rare-earth metal and a transition metal, and a second magnetic layer.
摘要翻译：一种制造磁存储元件的方法包括形成具有垂直磁各向异性分量的多个磁性层，其中多个磁性层包括具有稀土金属和过渡金属的合金的第一磁性层，以及第二磁性层。

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