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51. 发明申请

US20100072042A1 MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS 有权
标题翻译：存储元件和交叉点开关及其使用非挥发性纳米管块的阵列
公开(公告)号：US20100072042A1
公开(公告)日：2010-03-25
申请号：US12511779
申请日：2009-07-29
申请人： Claude L. Bertin , X. M. H. Huang , Thomas Rueckes , Ramesh Sivarajan
发明人： Claude L. Bertin , X. M. H. Huang , Thomas Rueckes , Ramesh Sivarajan
IPC分类号： H01H59/00 , H01H36/00
CPC分类号： G11C5/063 , B82Y10/00 , G11C13/0002 , G11C13/0021 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/10 , H01L27/105 , H01L27/1052 , H01L27/112 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L51/0048 , H01L51/0591 , Y10S977/943
摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
摘要翻译：在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。

52. 发明授权

US07598544B2 Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳[纳米管]纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US07598544B2
公开(公告)日：2009-10-06
申请号：US11332080
申请日：2006-01-13
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

53. 发明授权

US07598127B2 Nanotube fuse structure 有权
标题翻译：纳米管保险丝结构
公开(公告)号：US07598127B2
公开(公告)日：2009-10-06
申请号：US11284503
申请日：2005-11-22
申请人： Bruce J. Whitefield , Derryl D. J. Allman , Thomas Rueckes , Claude L. Bertin
发明人： Bruce J. Whitefield , Derryl D. J. Allman , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L21/86
CPC分类号： H01L23/5258 , H01L23/5256 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： A method of forming a carbon nanotube fuse by depositing a carbon nanotube layer, then depositing a cap layer directly over the carbon nanotube layer. The cap layer is formed of a material that has an insufficient amount of oxygen to significantly oxidize the carbon nanotube layer under operating conditions, and is otherwise sufficiently robust to protect the carbon nanotube layer from oxygen and plasmas. A photoresist layer is formed over the cap layer, and the photoresist layer is patterned to define a desired size of fuse. Both the cap layer and the carbon nanotube layer are completely etched, without removing the photoresist layer, to define the fuse having two ends in the carbon nanotube layer. Just the cap layer is etched, without removing the photoresist layer, so as to reduce the cap layer by a desired amount at the edges of the cap layer under the photoresist layer, without damaging the carbon nanotube layer. The photoresist layer is removed, and electrically conductive contacts are formed on each of the two ends of the fuse.
摘要翻译：通过沉积碳纳米管层形成碳纳米管熔丝，然后在碳纳米管层上直接沉积覆盖层的方法。盖层由具有不足量的氧的材料形成，以在操作条件下显着地氧化碳纳米管层，否则足够坚固以保护碳纳米管层免受氧气和等离子体的影响。在盖层上形成光致抗蚀剂层，并且将光致抗蚀剂层图案化以限定所需尺寸的熔丝。完全蚀刻盖层和碳纳米管层，而不去除光致抗蚀剂层，以限定在碳纳米管层中具有两端的熔丝。只是盖层被蚀刻，而不去除光致抗蚀剂层，以便在光致抗蚀剂层下的盖层的边缘处将盖层减少所需量，而不损害碳纳米管层。去除光致抗蚀剂层，并且在熔丝的两端的每一端上形成导电触点。

54. 发明授权

US07583526B2 Random access memory including nanotube switching elements 有权
标题翻译：随机存取存储器包括纳米管开关元件
公开(公告)号：US07583526B2
公开(公告)日：2009-09-01
申请号：US11879352
申请日：2007-07-17
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , B82Y10/00 , G11C13/025 , G11C14/00 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0665 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/936 , Y10S977/938 , Y10S977/943 , Y10T29/49002
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
摘要翻译：随机存取存储器包括纳米管开关元件。存储单元包括第一和第二纳米管切换元件和电子存储器。每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

55. 发明申请

US20090091352A1 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS 有权
标题翻译：基于纳米管的开关元件与多个控制
公开(公告)号：US20090091352A1
公开(公告)日：2009-04-09
申请号：US12246009
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20 , G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

56. 发明授权

US07416993B2 Patterned nanowire articles on a substrate and methods of making the same 有权
标题翻译：在衬底上形成图案的纳米线制品及其制造方法
公开(公告)号：US07416993B2
公开(公告)日：2008-08-26
申请号：US10936119
申请日：2004-09-08
申请人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L21/302
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0023 , H01L2924/0002 , Y10S977/724 , Y10S977/762 , Y10S977/767 , Y10S977/856 , H01L2924/00
摘要： Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.
摘要翻译：公开了纳米线制品及其制造方法。导电制品包括沿着制品限定多个导电通路的多个接触接触的纳米线段。纳米线段可以是半导体纳米线，金属纳米线，纳米管，单壁碳纳米管，多壁碳纳米管或与纳米管缠结的纳米线。各个片段可以具有不同的长度，并且可以包括长度短于制品的长度的片段。捆扎材料可以被定位成接触多个纳米线段的一部分。捆扎材料可以被图案化以产生具有暴露纳米线织物的区域的开口的框架的形状。这种捆扎层也可以用于与纳米线织物的电接触，特别是用于电缝合以降低织物的整体阻力。

57. 发明申请

US20080164541A1 Sensor platform using a non-horizontally oriented nanotube element 有权
公开(公告)号：US20080164541A1
公开(公告)日：2008-07-10
申请号：US11827393
申请日：2007-07-11
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

58. 发明授权

US07294877B2 Nanotube-on-gate FET structures and applications 有权
标题翻译：纳米管栅极FET结构和应用
公开(公告)号：US07294877B2
公开(公告)日：2007-11-13
申请号：US10811373
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L51/30
CPC分类号： H01L51/055 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C23/00 , G11C2213/17 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052
摘要： Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.
摘要翻译：纳米管栅极FET结构及其应用，包括只需要2n条控制线的n 2条交叉。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。控制门由半导体或导电材料中的至少一种制成。机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。该装置的某些实施例具有约4F 2的面积。其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。其他实施例提供了具有n 2个非易失性晶体管器件的n≥2的交叉开关阵列，但是仅需要2n个控制线。

59. 发明授权

US07138832B2 Nanotube-based switching elements and logic circuits 有权
公开(公告)号：US07138832B2
公开(公告)日：2006-11-21
申请号：US10917893
申请日：2004-08-13
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

60. 发明授权

US07115960B2 Nanotube-based switching elements 有权
标题翻译：基于纳米管的开关元件
公开(公告)号：US07115960B2
公开(公告)日：2006-10-03
申请号：US10917794
申请日：2004-08-13
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/762
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

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