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51. 发明申请

US20080258842A1 ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING ALTERNATING FRAME STRUCTURE 有权
标题翻译：声学谐振器性能提高使用替代框架结构
公开(公告)号：US20080258842A1
公开(公告)日：2008-10-23
申请号：US12115666
申请日：2008-05-06
申请人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
发明人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
IPC分类号： H03H9/54
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/02149 , H03H9/13 , H03H9/132 , H03H9/173 , H03H2003/0428
摘要： Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
摘要翻译：公开了一种包括基板，第一电极，压电材料层，第二电极和交替框架区域的声共振器。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极邻近压电层，第二电极具有外周。交替的框架区域在第一和第二电极之一上。

52. 发明授权

US07422929B2 Wafer-level packaging of optoelectronic devices 有权
标题翻译：晶圆级封装的光电器件
公开(公告)号：US07422929B2
公开(公告)日：2008-09-09
申请号：US11071550
申请日：2005-03-02
申请人： Kendra J. Gallup , Frank S. Geefay , Ronald Shane Fazzio , Martha Johnson , Carrie Ann Guthrie , Tanya Jegeris Snyder , Richard C. Ruby
发明人： Kendra J. Gallup , Frank S. Geefay , Ronald Shane Fazzio , Martha Johnson , Carrie Ann Guthrie , Tanya Jegeris Snyder , Richard C. Ruby
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01S5/02288 , G02B6/4206 , H01L2924/0002 , H01S5/02248 , H01S5/02292 , H01L2924/00
摘要： In an embodiment, the invention provides a method for forming a wafer-level package. A bonding pad is formed on a first wafer. After forming the bonding pad, an optoelectronic device is located on the first wafer. A gasket is formed on a second wafer. After a gasket is formed on a second wafer, the second wafer is attached to the first wafer with a bond between the gasket and the bonding pad.
摘要翻译：在一个实施例中，本发明提供了一种用于形成晶片级封装的方法。在第一晶片上形成接合焊盘。在形成接合焊盘之后，光电子器件位于第一晶片上。在第二晶片上形成垫圈。在第二晶片上形成垫圈之后，第二晶片通过垫片和焊盘之间的接合附接到第一晶片。

53. 发明授权

US07388454B2 Acoustic resonator performance enhancement using alternating frame structure 有权
标题翻译：使用交替框架结构的声谐振器性能提升
公开(公告)号：US07388454B2
公开(公告)日：2008-06-17
申请号：US11159753
申请日：2005-06-23
申请人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
发明人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/02149 , H03H9/13 , H03H9/132 , H03H9/173 , H03H2003/0428
摘要： Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
摘要翻译：公开了一种包括基板，第一电极，压电材料层，第二电极和交替框架区域的声共振器。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极邻近压电层，第二电极具有外周。交替的框架区域在第一和第二电极之一上。

54. 发明授权

US07369013B2 Acoustic resonator performance enhancement using filled recessed region 有权
标题翻译：使用填充凹陷区域的声谐振器性能提升
公开(公告)号：US07369013B2
公开(公告)日：2008-05-06
申请号：US11100311
申请日：2005-04-06
申请人： Ronald S. Fazzio , Richard C. Ruby
发明人： Ronald S. Fazzio , Richard C. Ruby
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/132 , H03H9/02149 , H03H9/13 , H03H9/173 , H03H9/175 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.
摘要翻译：声谐振器，其包括基板，第一电极，压电材料层，第二电极和填充区域。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极邻近压电层，第二电极具有外周。填充区域位于第一和第二电极之一中。

55. 发明申请

US20080079516A1 HBAR oscillator and method of manufacture 有权
标题翻译： HBAR振荡器及其制造方法
公开(公告)号：US20080079516A1
公开(公告)日：2008-04-03
申请号：US11540413
申请日：2006-09-28
申请人： Richard C. Ruby , Wei Pang
发明人： Richard C. Ruby , Wei Pang
IPC分类号： H03H9/58
CPC分类号： H03H3/04 , H03H9/105 , H03H9/605
摘要： An oscillator including a high tone bulk acoustic resonator (HBAR), a film bulk acoustic resonator (FBAR) filter and a method of fabrication are described.
摘要翻译：描述了包括高音体积声共振器（HBAR），薄膜体声波谐振器（FBAR）滤波器和制造方法的振荡器。

56. 发明申请

US20080078233A1 Apparatus and method for measuring an environmental condition 有权
标题翻译：用于测量环境条件的装置和方法
公开(公告)号：US20080078233A1
公开(公告)日：2008-04-03
申请号：US11526948
申请日：2006-09-25
申请人： John D. Larson , Storrs T. Hoen , Annette C. Grot , Richard C. Ruby , Graham M. Flower
发明人： John D. Larson , Storrs T. Hoen , Annette C. Grot , Richard C. Ruby , Graham M. Flower
IPC分类号： G01H13/00
CPC分类号： G01N29/022 , G01N29/036 , G01N2291/0253 , G01N2291/0256 , G01N2291/02845 , G01N2291/0426
摘要： A sensor senses an environmental condition. The sensor includes a film bulk acoustic resonator that includes a layer of material that causes resonant frequency and/or quality factor shifts of the film bulk acoustic resonator in response to changes in the environmental condition. The environmental condition may be relative humidity and the layer of material may be a moisture absorptive material.
摘要翻译：传感器感测环境条件。传感器包括膜体声波谐振器，其包括响应于环境条件的变化而引起膜体声波谐振器的谐振频率和/或质量因子偏移的材料层。环境条件可以是相对湿度，并且材料层可以是吸湿材料。

57. 发明授权

US07312675B2 Vertically separated acoustic filters and resonators 失效
标题翻译：垂直分离的声学滤波器和谐振器
公开(公告)号：US07312675B2
公开(公告)日：2007-12-25
申请号：US11373355
申请日：2006-03-09
申请人： Richard C. Ruby , John D. Larson, III
发明人： Richard C. Ruby , John D. Larson, III
IPC分类号： H03H9/54
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
摘要翻译：公开了一种包括垂直分离的声谐振器的装置。该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

58. 发明授权

US07275292B2 Method for fabricating an acoustical resonator on a substrate 有权
标题翻译：在基板上制造声学谐振器的方法
公开(公告)号：US07275292B2
公开(公告)日：2007-10-02
申请号：US10384199
申请日：2003-03-07
申请人： Richard C. Ruby , John D. Larson , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson , Paul D. Bradley
IPC分类号： H04R17/00 , H01L41/00 , B05D5/12
CPC分类号： H03H3/04 , H03H3/02 , H03H9/02149 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
摘要翻译：在具有顶面的基板上制造声学谐振器的方法。首先，产生上表面的凹陷。接下来，凹陷填充有牺牲材料。填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。接下来，在所述上表面上沉积第一电极。然后，在所述第一电极上沉积一层压电材料。使用质量负载剥离工艺将第二电极沉积在压电材料层上。

59. 发明授权

US06953990B2 Wafer-level packaging of optoelectronic devices 有权
标题翻译：晶圆级封装的光电器件
公开(公告)号：US06953990B2
公开(公告)日：2005-10-11
申请号：US10666363
申请日：2003-09-19
申请人： Kendra J. Gallup , Frank S. Geefay , Ronald Shane Fazzio , Martha Johnson , Carrie Ann Guthrie , Tanya Jegeris Snyder , Richard C. Ruby
发明人： Kendra J. Gallup , Frank S. Geefay , Ronald Shane Fazzio , Martha Johnson , Carrie Ann Guthrie , Tanya Jegeris Snyder , Richard C. Ruby
IPC分类号： H01L23/02 , B81B7/00 , B81C3/00 , G02B6/42 , H01L21/00 , H01L21/46 , H01L21/60 , H01L23/495 , H01L31/0203 , H01L31/0232 , H01L33/00 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026
CPC分类号： H01S5/02288 , G02B6/4206 , H01L2924/0002 , H01S5/02248 , H01S5/02292 , H01L2924/00
摘要： A wafer-level package includes a first wafer comprising a bonding pad, an optoelectronic device on the first wafer, and a second wafer comprising a gasket. The second wafer is attached to the first wafer by a bond between the gasket and the bonding pad.
摘要翻译：晶片级封装包括第一晶片，其包括接合焊盘，第一晶片上的光电器件，以及包括垫片的第二晶片。第二晶片通过垫圈和接合垫之间的接合附接到第一晶片。

60. 发明授权

US06946928B2 Thin-film acoustically-coupled transformer 有权
标题翻译：薄膜声耦合变压器
公开(公告)号：US06946928B2
公开(公告)日：2005-09-20
申请号：US10699481
申请日：2003-10-30
申请人： John D. Larson, III , Richard C. Ruby
发明人： John D. Larson, III , Richard C. Ruby
IPC分类号： H03H9/17 , H03H9/13 , H03H9/60 , H03H9/54 , H03H9/205
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： The acoustically-coupled transformer includes first and second stacked bulk acoustic resonators (SBARs), each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. In one embodiment, the acoustic decoupler comprises a layer of decoupling material has having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength of an acoustic wave having a frequency equal to the transformer's center frequency. In another embodiment, the acoustic decoupler comprises a Bragg stack. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals, second terminals, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR and the first terminals, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR and the second terminals.
摘要翻译：声耦合变压器包括第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声共振器（FBAR），在它们之间具有声耦合器。在一个实施例中，声学解耦器包括去耦材料层具有等于频率等于变压器中心频率的声波波长四分之一的奇数整数倍的标称厚度。在另一个实施例中，声分离器包括布拉格堆叠。每个FBAR都具有与它们之间的压电材料的平面电极。变压器还具有第一端子，第二端子，将第一SBAR的一个FBAR与第二SBAR的一个FBAR和第一端子连接的第一电路，以及将第一SBAR的另一个FBAR连接到另一个FBAR的第二电路的第二个SBAR和第二个终端。

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