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    • 52. 发明申请
    • Nanotube-based switching elements
    • 基于纳米管的开关元件
    • US20050035367A1
    • 2005-02-17
    • US10917794
    • 2004-08-13
    • Claude BertinThomas RueckesBrent Segal
    • Claude BertinThomas RueckesBrent Segal
    • H01H59/00H01L27/28H01L29/06H01L29/73H01L29/74H01L29/78H01L51/30
    • H01L29/0665B82Y10/00G11C13/025G11C23/00H01H1/0094H01H2001/0005H01L27/28H01L29/0673H01L29/73H01L29/78H01L51/0048H01L51/0508Y10S977/708Y10S977/762
    • Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
    • 基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中,开关元件包括输入节点,输出节点,具有至少一个导电纳米管的纳米管通道元件和控制电极。 控制电极相对于纳米管通道元件设置,以在输入节点和输出节点之间可控制地形成导电通道。 通道至少包括所述纳米管通道元件。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 在本发明的另一实施例中,控制电极相对于纳米管通道元件布置,以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。 在本发明的另一个实施例中,输出节点包括相对于纳米管通道元件设置的隔离结构,使得通道形成从输出节点的状态基本上是不变的。 在本发明的另一个实施例中,隔离结构包括设置在纳米管通道元件的相对侧上的电极,所述电极产生基本上相同的电场。 在本发明的另一个实施例中,布尔逻辑电路包括至少一个输入端子和输出端子,以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 布尔函数变换包括函数内的布尔反转,如NOT或NOR函数。
    • 56. 发明申请
    • RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS
    • 随机存取存储器,包括纳米管开关元件
    • US20070127285A1
    • 2007-06-07
    • US11231213
    • 2005-09-20
    • Claude BertinThomas RuckesBrent Segal
    • Claude BertinThomas RuckesBrent Segal
    • G11C11/00
    • G11C13/025B82Y10/00G11C14/00G11C23/00Y10S977/732Y10S977/733Y10S977/936Y10S977/938Y10S977/943
    • Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
    • 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管开关元件包括输出节点,具有至少一个导电纳米管的纳米管通道元件和具有相对于纳米管通道元件设置的设定电极和释放电极的控制结构,以可控地形成和取消导电通道 在所述通道电极和所述输出节点之间。 电子存储器具有交叉耦合的第一和第二逆变器。 第一反相器的输入节点耦合到第一纳米管开关元件的设定电极和第二纳米管开关元件的输出节点。 第二反相器的输入节点耦合到第二纳米管开关元件的设定电极和第一纳米管开关元件的输出节点; 并且沟道电极耦合到沟道电压线。 第一纳米管开关元件的释放电极耦合到第二纳米管开关元件的释放电极,并且其中两个释放电极耦合到释放线。 电池可以作为普通电子存储器工作,或者可以在阴影存储器或存储模式(例如,当电力中断时)操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作,其中纳米管切换元件的状态可以被传送到电子存储器。