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51. 发明授权

US07569905B2 Systems and methods for electrical contacts to arrays of vertically aligned nanorods 失效
标题翻译：用于电接触垂直排列的纳米棒阵列的系统和方法
公开(公告)号：US07569905B2
公开(公告)日：2009-08-04
申请号：US11015663
申请日：2004-12-20
申请人： Thomas Hantschel , Noble M. Johnson , Peter Kiesel , Christian G. Van De Walle , William S. Wong
发明人： Thomas Hantschel , Noble M. Johnson , Peter Kiesel , Christian G. Van De Walle , William S. Wong
IPC分类号： H01L29/84
CPC分类号： B82Y10/00 , G01N27/127 , H01L27/307 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048 , H01L51/441 , Y02E10/549 , Y10S977/762
摘要： Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.
摘要翻译：系统和方法可以向基本上垂直排列的纳米棒阵列提供电触点。纳米棒阵列可以制造在用作纳米棒的底部接触的导电层的顶部上。顶部金属接触可以应用于纳米棒阵列的多个纳米棒。触点可以允许测量纳米棒的I / V（电流/电压）特性。

52. 发明申请

US20090156917A1 Controlling Transfer of Objects Affecting Optical Characteristics 有权
标题翻译：控制影响光学特性的物体的传输
公开(公告)号：US20090156917A1
公开(公告)日：2009-06-18
申请号：US11957610
申请日：2007-12-17
申请人： Jorg Martini , Jeffrey Roe , Peter Kiesel , Michael Bassler , Alan Bell , Richard H. Bruce , Noble M. Johnson
发明人： Jorg Martini , Jeffrey Roe , Peter Kiesel , Michael Bassler , Alan Bell , Richard H. Bruce , Noble M. Johnson
IPC分类号： A61B5/00
CPC分类号： A61B5/1459 , A61B5/14532 , G01N21/03 , G01N21/39 , G01N21/8507
摘要： An implantable product such as an article, device, or system can include analyte and non-analyte containers in parts that can be operated as optical cavities. The product can also include fluidic components such as filter assemblies that control transfer of objects that affect or shift spectrum features or characteristics such as by shifting transmission mode peaks or reflection mode valleys, shifting phase, reducing maxima or contrast, or increasing intermediate intensity width such as full width half maximum (FWHM). Analyte, e.g. glucose molecules, can be predominantly included in a set of objects that transfer more rapidly into the analyte container than other objects, and can have a negligible or zero rate of transfer into the non-analyte container; objects that transfer more rapidly into the non-analyte container can include objects smaller than the analyte or molecules of a set of selected types, including, e.g., sodium chloride. Output light from the containers accordingly includes information about analyte.
摘要翻译：诸如制品，装置或系统的可植入产品可以包括可以作为光腔操作的部件中的分析物和非分析物容器。该产品还可以包括流体组件，例如过滤器组件，其控制影响或移动光谱特征或特性的物体的转移，例如通过移动透射模式峰值或反射模式谷，移动相位，减小最大值或对比度，或增加中等强度宽度，作为全宽半最大值（FWHM）。分析物，例如葡萄糖分子可以主要包括在一组物体中，其比其它物体更快地转移到分析物容器中，并且可以具有可忽略或零速率的转移到非分析物容器中; 将更快速地转移到非分析物容器中的物体可以包括比分析物小的物体或一组选定类型的分子，包括例如氯化钠。因此，来自容器的输出光包括关于分析物的信息。

53. 发明申请

US20080186483A1 Implanting optical cavity structures 有权
标题翻译：植入光腔结构
公开(公告)号：US20080186483A1
公开(公告)日：2008-08-07
申请号：US11702329
申请日：2007-02-05
申请人： Peter Kiesel , Oliver Schmidt , Michael Bassler , Richard H. Bruce , Noble M. Johnson
发明人： Peter Kiesel , Oliver Schmidt , Michael Bassler , Richard H. Bruce , Noble M. Johnson
IPC分类号： G01N1/10
CPC分类号： G01N21/03 , A61B5/0075 , A61B5/0084 , A61B5/14532 , A61B5/1459 , G01N21/0303 , G01N21/274 , G01N21/31
摘要： An implantable product includes an optical cavity structure with first and second parts, each of which can operate as an optical cavity. The first part includes a container with at least one opening through which bodily fluid can transfer between the container's interior and exterior when the product is implanted in a body. The second part includes a container that is closed and contains a reference fluid. The implantable product can also include one or both of a light source component and a photosensing component. Photosensed quantities from the first part's output light can be adjusted based on photosensed quantities from the second part's output light. Both parts can have their light interface surfaces aligned so that they both receive input light from a light source component and both provide output light to a photosensing component.
摘要翻译：可植入产品包括具有第一和第二部分的光学腔结构，每个部分可以作为光腔工作。第一部分包括具有至少一个开口的容器，当产品植入体内时，体液可以通过该开口在容器的内部和外部之间转移。第二部分包括封闭的容器并且包含参考流体。可植入产品还可以包括光源组件和感光组件中的一个或两个。可以根据第二部分输出指示灯的光线数量来调整第一部分输出光的照片数量。两个部件可以使它们的光接口表面对准，使得它们都接收来自光源部件的输入光并且都向光敏部件提供输出光。

54. 发明申请

US20140072009A1 ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：电子束泵浦垂直孔表面发射激光
公开(公告)号：US20140072009A1
公开(公告)日：2014-03-13
申请号：US13523681
申请日：2012-06-14
申请人： Thomas Wunderer , Noble M. Johnson , John E. Northrup
发明人： Thomas Wunderer , Noble M. Johnson , John E. Northrup
IPC分类号： H01S5/343
CPC分类号： H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/0222 , H01S5/02461 , H01S5/04 , H01S5/14 , H01S5/183 , H01S5/18358 , H01S5/18369 , H01S5/1838 , H01S5/18383 , H01S5/305 , H01S5/3086 , H01S5/3222 , H01S5/327 , H01S5/34333
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
摘要翻译：垂直外腔表面发射激光器（VECSEL）结构包括异质结构和第一和第二反射器。异质结构包括具有一个或多个量子阱结构的有源区，该量子阱结构被配置为响应于电子束的泵浦而发射波长的辐射，羊涎酸。可以掺杂一个或多个异质结构层。有源区域设置在第一反射器和第二反射器之间，并且通过外部空腔与第一反射器间隔开。电子束源被配置为产生朝向有源区域的电子束。至少一个电触点电耦合到异质结构并且被配置为提供异质结构和地之间的电流路径。

55. 发明申请

US20130052758A1 REMOVING ALUMINUM NITRIDE SECTIONS 有权
标题翻译：拆除硝酸铝部分
公开(公告)号：US20130052758A1
公开(公告)日：2013-02-28
申请号：US13217821
申请日：2011-08-25
申请人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
发明人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
IPC分类号： H01L21/66 , B44C1/22
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译：讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。在蚀刻过程中，大块AlN暴露于蚀刻剂。在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。

56. 发明申请

US20130049005A1 DEVICES HAVING REMOVED ALUMINUM NITRIDE SECTIONS 有权
标题翻译：具有去除的氮化铝部分的装置
公开(公告)号：US20130049005A1
公开(公告)日：2013-02-28
申请号：US13217844
申请日：2011-08-25
申请人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
发明人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
IPC分类号： H01L33/02 , C30B25/02 , B32B3/10
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译：在本体结晶AlN衬底上外延生长一层或多层。外延层包括作为外延层的外延生长的初始表面的表面。在外延生长的初始表面的大部分上基本上去除了AlN衬底。

57. 发明授权

US07856040B2 Semiconductor light emitting devices with non-epitaxial upper cladding 有权
标题翻译：具有非外延上包层的半导体发光器件
公开(公告)号：US07856040B2
公开(公告)日：2010-12-21
申请号：US12237106
申请日：2008-09-24
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

58. 发明申请

US20100148147A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH 审中-公开
标题翻译：单色白色和全彩色发光二极管使用选择区域增长
公开(公告)号：US20100148147A1
公开(公告)日：2010-06-17
申请号：US12337580
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/08 , H01L33/24
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。具有第一图案的第一掩模施加在n型层的表面上。选择性地生长第一有源区，并且包括第一有源颜色的单个或多个量子阱（QW），以在围绕第一图案的第一附近区域中引起第一波长偏移。第一波长偏移导致根据第一图案的第一所需颜色的发射。

59. 发明申请

US20100148146A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS 有权
标题翻译：单色白色和全彩色发光二极管使用光泵浦多个量子阱
公开(公告)号：US20100148146A1
公开(公告)日：2010-06-17
申请号：US12337572
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/08
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。在第一波长处的第一单个或多个量子阱（QW）形成在发光二极管的p型层和n型层之间的有源区。在p型层或n型层内形成多个被动量子阱（QW）。多个无源QW由第一或单个多个QW光学泵浦以产生期望的颜色。

60. 发明授权

US4598305A Depletion mode thin film semiconductor photodetectors 失效
标题翻译：耗尽模式薄膜半导体光电探测器
公开(公告)号：US4598305A
公开(公告)日：1986-07-01
申请号：US621340
申请日：1984-06-18
申请人： Anne Chiang , Noble M. Johnson
发明人： Anne Chiang , Noble M. Johnson
IPC分类号： H01L27/146 , H01L31/10 , H01L31/113 , H01L29/78 , H01L27/12
CPC分类号： H01L31/1136
摘要： A depletion mode thin film semiconductor photodetector comprises a crystalline silicon thin film on an insulating substrate with a source region, a drain region and a thin film light sensing channel region formed therebetween. A gate oxide formed over the channel region and a gate electrode formed on the gate oxide. A p-n junction located parallel to the surface of the substrate and within the thin film functioning as a space charge separation region in the channel. The lower portion of the channel region is a p region extending to the substrate and the upper portion of the channel region is a n region extending to the gate oxide. The channel region functions as a fully depleted channel when the photodetector is operated in its OFF state providing for high dynamic range and large photocurrent operation. The depletion mode thin film semiconductor photodetector with n.sup.+ source and drain regions function as an ohmic contacts to the channel n region forming a thin film transistor. The thin film transistor photodetector has high photoconductive gain at low light intensities when the n channel region is fully pinched off by an applied gate voltage to the gate electrode which is sufficiently negative as compared to the threshold voltage of the photodetector. When the drain region is replaced by a p.sup.+ region functioning as an ohmic contact to the channel p region, a depletion mode gated diode is formed. When the channel region is extended to include a plurality of linearly spaced gate electrodes formed on the gate oxide region with an input diode formed adjacent to the first of such gate electrodes and an output diode formed adjacent to the last of such gate electrodes, the photodetector functions as a charge coupled device.
摘要翻译：耗尽型薄膜半导体光电检测器包括在绝缘基板上的晶体硅薄膜，源极区，漏区和在其间形成的薄膜光感应沟道区。形成在沟道区上的栅极氧化物和形成在栅极氧化物上的栅电极。 p-n结，其平行于衬底的表面并且在薄膜内，用作通道中的空间电荷分离区域。沟道区的下部是延伸到衬底的p区，沟道区的上部是延伸到栅极氧化物的n区。当光电检测器工作在其关闭状态时，通道区域用作完全耗尽的通道，提供高动态范围和大的光电流操作。具有n +源极和漏极区域的耗尽型薄膜半导体光电探测器用作形成薄膜晶体管的沟道n区的欧姆接触。薄膜晶体管光电检测器在低光强度下具有高的光电导增益，当n沟道区被栅极施加的栅极电压完全夹到栅电极时，与光电检测器的阈值电压相比是足够的。当漏极区被由作为与沟道p区的欧姆接触起作用的p +区代替时，形成耗尽型门控二极管。当沟道区域被扩展以包括形成在栅极氧化物区域上的多个线性间隔开的栅极时，其中形成在与这些栅电极中的第一个栅极电极相邻的输入二极管上，以及与最后一个这样的栅电极相邻形成的输出二极管，用作电荷耦合器件。

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