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51. 发明授权

US08310012B2 Semiconductor device having metal gate and manufacturing method thereof 有权
标题翻译：具有金属栅极的半导体器件及其制造方法
公开(公告)号：US08310012B2
公开(公告)日：2012-11-13
申请号：US12759670
申请日：2010-04-13
申请人： Guang-Yaw Hwang , Yu-Ru Yang , Jiunn-Hsiung Liao , Pei-Yu Chou
发明人： Guang-Yaw Hwang , Yu-Ru Yang , Jiunn-Hsiung Liao , Pei-Yu Chou
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/823842 , H01L21/82385 , H01L29/42372 , H01L29/4966 , H01L29/66545 , H01L29/66583 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的栅极电介质层和形成在栅极介电层上的至少第一导电型金属栅极。第一导电型金属栅极包括在填充金属层和栅极介电层之间形成的填充金属层和U型金属层。 U型金属层的最上部比填充金属层低。

52. 发明申请

US20120270403A1 METHOD OF FABRICATING OPENINGS 有权
标题翻译：制作开口的方法
公开(公告)号：US20120270403A1
公开(公告)日：2012-10-25
申请号：US13535370
申请日：2012-06-28
申请人： Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin , Po-Chao Tsao
发明人： Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin , Po-Chao Tsao
IPC分类号： H01L21/306
CPC分类号： H01L21/76802 , H01L21/76831 , H01L21/76897
摘要： A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.
摘要翻译：公开了一种制造开口的方法。首先，提供其上具有自对准硅化物区域的半导体衬底。蚀刻停止层和至少介电层从底部到顶部设置在半导体衬底上。其次，对电介质层和蚀刻停止层进行图案化以在电介质层和蚀刻停止层中形成多个开口，使得开口露出自对准区域。然后，形成覆盖电介质层的电介质薄膜，开口侧壁和自对准硅化物区域。然后，去除设置在电介质层和自对准硅化物区域上的电介质薄膜。

53. 发明授权

US08293639B2 Method for controlling ADI-AEI CD difference ratio of openings having different sizes 有权
标题翻译：用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法
公开(公告)号：US08293639B2
公开(公告)日：2012-10-23
申请号：US12371809
申请日：2009-02-16
申请人： Feng-Yih Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
发明人： Feng-Yih Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804 , H01L21/31144 , H01L21/76895
摘要： A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.
摘要翻译：描述了用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法。开口依次形成为含硅材料层，蚀刻电阻层和靶材料层。在开口蚀刻步骤之前，光致抗蚀剂掩模中的至少一个开口图案的尺寸通过基本上保形的聚合物层的光致抗蚀剂修饰或沉积而改变。执行在更宽的开口图案的侧壁上形成较厚聚合物的第一蚀刻步骤以形成图案化的含Si材料层。执行第二蚀刻步骤以去除蚀刻电阻层和目标材料层的暴露部分。控制光致抗蚀剂修整或聚合物层沉积步骤的参数中的至少一个参数和第一蚀刻步骤的蚀刻参数以获得预定的ADI-AEI CD差异比。

54. 发明授权

US08168374B2 Method of forming a contact hole 有权
标题翻译：形成接触孔的方法
公开(公告)号：US08168374B2
公开(公告)日：2012-05-01
申请号：US12854913
申请日：2010-08-12
申请人： Pei-Yu Chou , Jiunn-Hsiung Liao
发明人： Pei-Yu Chou , Jiunn-Hsiung Liao
IPC分类号： G03F7/26
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance.
摘要翻译：提供一种形成接触孔的方法。在光致抗蚀剂层中形成图案。将图案交换成硅光致抗蚀剂层以形成第一开口。在另一光致抗蚀剂层中形成另一图案。将图案交换为硅光致抗蚀剂层以形成第二开口。将具有第一和第二开口的图案交换到层间电介质层和蚀刻停止层以形成接触孔。本发明具有两次曝光工艺和两次蚀刻工艺以形成具有小距离的接触孔。

55. 发明授权

US08164141B2 Opening structure with sidewall of an opening covered with a dielectric thin film 有权
标题翻译：具有覆盖有介电薄膜的开口的侧壁的开口结构
公开(公告)号：US08164141B2
公开(公告)日：2012-04-24
申请号：US12884198
申请日：2010-09-17
申请人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
发明人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
IPC分类号： H01L29/78
CPC分类号： H01L21/31144 , H01L21/76802 , H01L21/76831 , H01L23/485
摘要： An opening structure includes a semiconductor substrate, at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall, a dielectric thin film covering at least a portion of the sidewall of each of the openings, and a metal layer filled in the openings.
摘要翻译：开口结构包括半导体衬底，设置在半导体衬底上的至少一个电介质层，其中所述电介质层具有暴露所述半导体衬底的多个开口，并且每个所述开口具有侧壁，至少覆盖至少一个的电介质薄膜每个开口的侧壁的一部分，以及填充在开口中的金属层。

56. 发明授权

US08101092B2 Method for controlling ADI-AEI CD difference ratio of openings having different sizes 有权
标题翻译：用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法
公开(公告)号：US08101092B2
公开(公告)日：2012-01-24
申请号：US11877918
申请日：2007-10-24
申请人： Chih-Wen Feng , Pei-Yu Chou , Chun-Ting Yeh , Jyh-Cherng Yau , Jiunn-Hsiung Liao , Feng-Yi Chang , Ying-Chih Lin
发明人： Chih-Wen Feng , Pei-Yu Chou , Chun-Ting Yeh , Jyh-Cherng Yau , Jiunn-Hsiung Liao , Feng-Yi Chang , Ying-Chih Lin
IPC分类号： C03C15/00 , H01L21/4763
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/76816 , H01L21/76897
摘要： A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidewalls thereof. Next, a second etching step is performed with the patterned photoresist layer, the patterned Si-containing material layer and the polymer layer as masks to at least remove an exposed portion of a etching resistive layer to form a patterned etching resistive layer. A portion of a target material layer is removed by using the patterned etching resistive layer as an etching mask to form a first and a second openings in the target material layer. The method is characterized by controlling etching parameters of the first and second etching steps to obtain predetermined ADI-AEI CD difference ratios.
摘要翻译：提供了一种用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法。首先，使用图案化的光致抗蚀剂层作为掩模进行第一蚀刻步骤，以在其侧壁上形成图案化的含Si材料层和聚合物层。接下来，利用图案化的光致抗蚀剂层，图案化的含Si材料层和聚合物层作为掩模来执行第二蚀刻步骤，以至少去除蚀刻电阻层的暴露部分以形成图案化的蚀刻电阻层。通过使用图案化的蚀刻电阻层作为蚀刻掩模来去除目标材料层的一部分，以在靶材料层中形成第一和第二开口。该方法的特征在于控制第一和第二蚀刻步骤的蚀刻参数以获得预定的ADI-AEI CD差异比。

57. 发明申请

US20120001338A1 OPENING STRUCTURE 有权
标题翻译：开放式结构
公开(公告)号：US20120001338A1
公开(公告)日：2012-01-05
申请号：US13234159
申请日：2011-09-16
申请人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
发明人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
IPC分类号： H01L23/48
CPC分类号： H01L21/31144 , H01L21/76802 , H01L21/76831 , H01L23/485
摘要： An opening structure is disclosed. The opening structure includes: a semiconductor substrate; at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall; a dielectric thin film covering at least a portion of the sidewall of each of the openings; an etch stop layer disposed between the semiconductor substrate and the dielectric layer and extending partially into the openings to isolate the dielectric thin film from the semiconductor substrate; and a metal layer filled in the openings.
摘要翻译：公开了一种开口结构。开口结构包括：半导体衬底; 设置在所述半导体衬底上的至少一个电介质层，其中所述电介质层具有暴露所述半导体衬底的多个开口，并且每个所述开口具有侧壁; 覆盖每个开口的侧壁的至少一部分的电介质薄膜; 蚀刻停止层，设置在所述半导体衬底和所述电介质层之间并且部分地延伸到所述开口中以将所述电介质薄膜与所述半导体衬底隔离; 以及填充在开口中的金属层。

58. 发明申请

US20110174774A1 METHOD OF DESCUMMING PATTERNED PHOTORESIST 审中-公开
标题翻译：描绘图案的方法
公开(公告)号：US20110174774A1
公开(公告)日：2011-07-21
申请号：US12690935
申请日：2010-01-21
申请人： Ying-Chih Lin , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Feng-Yi Chang , Shang-Yuan Tsai
发明人： Ying-Chih Lin , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Feng-Yi Chang , Shang-Yuan Tsai
IPC分类号： B44C1/22
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/31138 , H01L21/31144
摘要： A method of descumming a patterned photoresist is provided. First a material layer to be etched is provided. The material layer is covered by a patterned photoresist. Then a descum process is preformed to descum the edge of the patterned photoresist by nitrogen. Finally, the descummed patterned photoresist is used as a mask for etching the material layer.
摘要翻译：提供了一种去除图案化光致抗蚀剂的方法。首先提供待蚀刻的材料层。材料层被图案化的光致抗蚀剂覆盖。然后进行除氧过程以通过氮气除去图案化的光致抗蚀剂的边缘。最后，将除去图案化的光致抗蚀剂用作蚀刻材料层的掩模。

59. 发明授权

US07829472B2 Method of forming at least an opening using a tri-layer structure 有权
标题翻译：使用三层结构形成至少一个开口的方法
公开(公告)号：US07829472B2
公开(公告)日：2010-11-09
申请号：US12099788
申请日：2008-04-09
申请人： Wei-Hang Huang , Kai-Siang Neo , Pei-Yu Chou , Jiunn-Hsiung Liao
发明人： Wei-Hang Huang , Kai-Siang Neo , Pei-Yu Chou , Jiunn-Hsiung Liao
IPC分类号： H01L21/214
CPC分类号： H01L21/31138 , H01L21/3081 , H01L21/31116
摘要： A method of forming openings is disclosed. A substrate is first provided, and the tri-layer structure is formed on the substrate. The tri-layer structure includes a bottom photoresist layer, a silicon-containing layer and a top photoresist layer form bottom to top. Subsequently, the top photoresist layer is patterned, and the silicon-containing layer is etched by utilizing the top photoresist layer as an etching mask to partially expose the bottom photoresist layer. Next, the partially exposed bottom photoresist layer is etched through two etching steps in turn by utilizing the patterned silicon-containing layer as an etching mask. The first etching step includes an oxygen gas and at least one non-carbon-containing halogen-containing gas, while the second etching step includes at least one halogen-containing gas. The substrate is thereafter etched by utilizing the patterned bottom photoresist layer as an etching mask to form at least an opening in the substrate.
摘要翻译：公开了一种形成开口的方法。首先提供衬底，并且在衬底上形成三层结构。三层结构包括底部光致抗蚀剂层，含硅层和从顶部到顶部形成的顶部光致抗蚀剂层。随后，对顶部光致抗蚀剂层进行图案化，并且通过利用顶部光致抗蚀剂层作为蚀刻掩模来蚀刻含硅层以部分地曝光底部光致抗蚀剂层。接下来，通过利用图案化的含硅层作为蚀刻掩模，依次通过两个蚀刻步骤蚀刻部分曝光的底部光致抗蚀剂层。第一蚀刻步骤包括氧气和至少一种含有非含卤素的气体，而第二蚀刻步骤包括至少一种含卤素的气体。然后通过利用图案化的底部光致抗蚀剂层作为蚀刻掩模来蚀刻衬底，以在衬底中形成至少一个开口。

60. 发明申请

US20090258499A1 METHOD OF FORMING AT LEAST AN OPENING USING A TRI-LAYER STRUCTURE 有权
标题翻译：使用三层结构形成至少打开的方法
公开(公告)号：US20090258499A1
公开(公告)日：2009-10-15
申请号：US12099788
申请日：2008-04-09
申请人： Wei-Hang Huang , Kai-Siang Neo , Pei-Yu Chou , Jiunn-Hsiung Liao
发明人： Wei-Hang Huang , Kai-Siang Neo , Pei-Yu Chou , Jiunn-Hsiung Liao
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/3081 , H01L21/31116
摘要： A method of forming openings is disclosed. A substrate is first provided, and the tri-layer structure is formed on the substrate. The tri-layer structure includes a bottom photoresist layer, a silicon-containing layer and a top photoresist layer form bottom to top. Subsequently, the top photoresist layer is patterned, and the silicon-containing layer is etched by utilizing the top photoresist layer as an etching mask to partially expose the bottom photoresist layer. Next, the partially exposed bottom photoresist layer is etched through two etching steps in turn by utilizing the patterned silicon-containing layer as an etching mask. The first etching step includes an oxygen gas and at least one non-carbon-containing halogen-containing gas, while the second etching step includes at least one halogen-containing gas. The substrate is thereafter etched by utilizing the patterned bottom photoresist layer as an etching mask to form at least an opening in the substrate.
摘要翻译：公开了一种形成开口的方法。首先提供衬底，并且在衬底上形成三层结构。三层结构包括底部光致抗蚀剂层，含硅层和从顶部到顶部形成的顶部光致抗蚀剂层。随后，对顶部光致抗蚀剂层进行图案化，并且通过利用顶部光致抗蚀剂层作为蚀刻掩模来蚀刻含硅层以部分地曝光底部光致抗蚀剂层。接下来，通过利用图案化的含硅层作为蚀刻掩模，依次通过两个蚀刻步骤蚀刻部分曝光的底部光致抗蚀剂层。第一蚀刻步骤包括氧气和至少一种含有非含卤素的气体，而第二蚀刻步骤包括至少一种含卤素的气体。然后通过利用图案化的底部光致抗蚀剂层作为蚀刻掩模来蚀刻衬底，以在衬底中形成至少一个开口。

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