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51. 发明授权

US08119448B2 Semiconductor chip, wafer stack package using the same, and methods of manufacturing the same 有权
标题翻译：半导体芯片，使用其的晶片堆叠封装及其制造方法
公开(公告)号：US08119448B2
公开(公告)日：2012-02-21
申请号：US12817304
申请日：2010-06-17
申请人： Son-Kwan Hwang , In-Young Lee , Ho-Jin Lee , Dong-Hyeon Jang
发明人： Son-Kwan Hwang , In-Young Lee , Ho-Jin Lee , Dong-Hyeon Jang
IPC分类号： H01L21/00
CPC分类号： H01L24/11 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05599 , H01L2224/05647 , H01L2224/1147 , H01L2224/11902 , H01L2224/13025 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/9201 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10329 , H01L2224/05552
摘要： A semiconductor chip comprises a substrate including a front surface and a rear surface, the substrate having a first via hole formed in the front surface and a second via hole formed in the rear surface, a first conductive plug formed on the substrate, the first conductive plug including a first portion formed in the first via hole and a second portion protruding from the front surface of the substrate, and a second conductive plug formed on the first conductive plug, the second conductive plug having a smaller cross-sectional area than the first conductive plug.
摘要翻译：一种半导体芯片，包括：具有前表面和后表面的基板，所述基板具有形成在所述前表面上的第一通孔和形成在所述后表面中的第二通孔，形成在所述基板上的第一导电塞，所述第一导电所述插头包括形成在所述第一通孔中的第一部分和从所述基板的前表面突出的第二部分，以及形成在所述第一导电插塞上的第二导电插塞，所述第二导电插塞具有比所述第一通孔更小的横截面积导电插头

52. 发明授权

US07830017B2 Wafer level chip scale package, method of manufacturing the same, and semiconductor chip module including the wafer level chip scale package 有权
标题翻译：晶圆级芯片尺寸封装，其制造方法，以及包括晶圆级芯片级封装的半导体芯片模块
公开(公告)号：US07830017B2
公开(公告)日：2010-11-09
申请号：US11950251
申请日：2007-12-04
申请人： In-Young Lee , Dong-Ho Lee , Nam-Seog Kim , Hyun-Soo Chung , Ho-Jin Lee , Myeong-Soo Park
发明人： In-Young Lee , Dong-Ho Lee , Nam-Seog Kim , Hyun-Soo Chung , Ho-Jin Lee , Myeong-Soo Park
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/525 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L24/16 , H01L2224/05001 , H01L2224/05008 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05548 , H01L2224/05569 , H01L2224/056 , H01L2224/05647 , H01L2224/05666 , H01L2224/11334 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： Provided are a wafer level chip scale package in which a redistribution process is applied at a wafer level, a manufacturing method thereof, and a semiconductor chip module including the wafer level chip scale package. The wafer level chip scale package includes a semiconductor chip having a bonding pad, a first insulating layer disposed on the semiconductor chip so as to expose the bonding pad, a redistribution line disposed on the exposed bonding pad and the first insulating layer, a sacrificial layer disposed below a redistribution pad of the redistribution line, a second insulating layer disposed on the redistribution line so as to expose the redistribution pad and including a crack inducement hole disposed beside the sacrificial layer, and an external connection terminal attached to the redistribution pad.
摘要翻译：提供了其中在晶片级应用再分配处理的晶片级芯片级封装，其制造方法以及包括晶片级芯片级封装的半导体芯片模块。晶片级芯片级封装包括具有接合焊盘的半导体芯片，设置在半导体芯片上以暴露焊盘的第一绝缘层，设置在暴露的焊盘和第一绝缘层上的再分配线，牺牲层设置在所述再分配线的再分配衬垫的下方，设置在所述再分配线上的第二绝缘层，以暴露所述再分配衬垫并且包括设置在所述牺牲层旁边的裂纹诱导孔，以及附接到所述再分布衬垫的外部连接端子。

53. 发明授权

US07801101B2 Apparatus and method for compensating forward link rain attenuation based on adaptive transmission scheme for interactive satellite transmission system 失效
标题翻译：基于交互式卫星传输系统的自适应传输方案补偿前向链路衰减的装置和方法
公开(公告)号：US07801101B2
公开(公告)日：2010-09-21
申请号：US10892679
申请日：2004-07-15
申请人： Minsu Shin , Joon-Gyu Ryu , Hoon Jeong , Ho-Jin Lee
发明人： Minsu Shin , Joon-Gyu Ryu , Hoon Jeong , Ho-Jin Lee
IPC分类号： H04B7/216
CPC分类号： H04B7/18513 , H04L1/0003 , H04L1/0009 , H04W4/18 , H04W84/06
摘要： Provided are a forward link rain attenuation compensating apparatus using an adaptive transmission scheme in an interactive satellite communication system and a method thereof. The apparatus separates the mobile stations into clear-sky mobile stations and mobile stations in the state of rain attenuation and makes the clear-sky mobile stations receive data having a high data transmission efficiency at a high-speed while making the rain attenuation mobile stations receive the data continuously although the data transmit rate is low by making each of the two kinds of mobile stations receive data frames of a different transmission method, and provides a method therefor. The apparatus includes: a resource manager, a transmitting data format converter, a forward modulator, a backward demodulator, a receiving data format converter.
摘要翻译：提供一种在交互式卫星通信系统中使用自适应传输方案的前向链路雨衰补偿装置及其方法。该装置将移动台分为处于雨衰状态的空中移动台和移动台，使得天空清空的移动台高速接收高数据传输效率的数据，同时使雨衰移移动站接收通过使两种移动站中的每一个接收到不同的传输方式的数据帧，数据传输速率是低的，并且提供了一种方法。该装置包括：资源管理器，发送数据格式转换器，前向调制器，反向解调器，接收数据格式转换器。

54. 发明授权

US07777345B2 Semiconductor device having through electrode and method of fabricating the same 有权
标题翻译：具有通孔电极的半导体器件及其制造方法
公开(公告)号：US07777345B2
公开(公告)日：2010-08-17
申请号：US12132925
申请日：2008-06-04
申请人： Ho-Jin Lee , Nam-Seog Kim , Yong-Chai Kwon , Hyun-Soo Chung , In-Young Lee , Son-Kwan Hwang
发明人： Ho-Jin Lee , Nam-Seog Kim , Yong-Chai Kwon , Hyun-Soo Chung , In-Young Lee , Son-Kwan Hwang
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/481 , H01L24/03 , H01L24/06 , H01L24/13 , H01L24/32 , H01L25/0657 , H01L2224/02372 , H01L2224/034 , H01L2224/036 , H01L2224/0401 , H01L2224/05009 , H01L2224/05011 , H01L2224/05552 , H01L2224/05559 , H01L2224/05561 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06136 , H01L2224/06181 , H01L2224/08146 , H01L2224/32145 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/19041 , H01L2924/00014
摘要： A semiconductor device having a through electrode and a method of fabricating the same are disclosed. In one embodiment, a semiconductor device includes a first insulating layer formed on a semiconductor substrate. A wiring layer having a first aperture to expose a portion of the first insulating layer is formed on the first insulating layer. A second insulating layer is formed on an upper portion of the wiring layer and in the first aperture. A conductive pad having a second aperture to expose a portion of the second insulating layer is formed on the second insulating layer. A through hole with a width narrower than widths of the first and second apertures is formed through the first and second insulating layers and an upper portion of the semiconductor substrate. A through electrode is formed in the through hole.
摘要翻译：公开了一种具有通孔的半导体器件及其制造方法。在一个实施例中，半导体器件包括形成在半导体衬底上的第一绝缘层。具有用于露出第一绝缘层的一部分的第一孔的布线层形成在第一绝缘层上。第二绝缘层形成在布线层的上部和第一孔中。具有第二孔径以暴露第二绝缘层的一部分的导电焊盘形成在第二绝缘层上。通过第一和第二绝缘层和半导体衬底的上部形成宽度比第一和第二孔的宽度窄的通孔。在通孔中形成贯通电极。

55. 发明申请

US20090305502A1 Methods of Forming Integrated Circuit Chips Having Vertically Extended Through-Substrate Vias Therein and Chips Formed Thereby 有权
标题翻译：形成集成电路芯片的方法，其具有垂直扩展的通过基板的通孔和由此形成的芯片
公开(公告)号：US20090305502A1
公开(公告)日：2009-12-10
申请号：US12476793
申请日：2009-06-02
申请人： Ho-Jin Lee , Kang-Wook Lee , Myeong-Soon Park , Ju-il Choi , Son-Kwan Hwang
发明人： Ho-Jin Lee , Kang-Wook Lee , Myeong-Soon Park , Ju-il Choi , Son-Kwan Hwang
IPC分类号： H01L21/768
CPC分类号： H01L23/528 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/06181 , H01L2224/13009 , H01L2224/16145 , H01L2224/16225 , H01L2224/48145 , H01L2225/06513 , H01L2225/06541 , H01L2924/15311 , H01L2924/00012
摘要： Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.
摘要翻译：形成集成电路器件的方法包括在半导体衬底的第一表面上形成层间电介质层，然后形成延伸穿过层间电介质层并进入半导体衬底的互连孔。第一侧壁间隔层形成在互连孔的侧壁上。在互连孔的底部的半导体衬底被各向同性蚀刻以在半导体衬底中限定底切凹部。该蚀刻步骤使用第一侧壁间隔层作为蚀刻掩模进行。然后用通孔电极填充互连孔和未切割的凹部。去除半导体衬底的第二表面足够的持续时间以露出包含通孔电极的未切割凹部。

56. 发明申请

US20090180476A1 INTER WORKING SYSTEM BETWEEN IP NETWORKS USING DIFFERENT IP ADDRESS FORMAT, APPLICATION LAYER GATEWAY (ALG) SERVER, STUN SERVER, NETWORK ADDRESS TRANSLATOR, INTERWORKING METHOD THEREOF, AND SIP MESSAGE ROUTING METHOD THEREOF 有权
标题翻译：使用不同IP地址格式的IP网络之间的互联系统，应用层网关（ALG）服务器，STUN服务器，网络地址转换器，其交互方法和SIP消息路由方法
公开(公告)号：US20090180476A1
公开(公告)日：2009-07-16
申请号：US12298426
申请日：2007-04-24
申请人： Jang-Won Lee , Ho-Jin Lee , Sang-Man Bak
发明人： Jang-Won Lee , Ho-Jin Lee , Sang-Man Bak
IPC分类号： H04L12/56
CPC分类号： H04L65/1006 , H04L29/06027 , H04L29/12367 , H04L29/12528 , H04L29/12556 , H04L61/2514 , H04L61/2575 , H04L61/2585 , H04L65/103 , H04L65/104 , H04L65/1043
摘要： Disclosed are an interworking system between IP networks using different IP address format, an application layer gateway (ALG) server, a network address translator, an interworking method, and a SIP message routing method. The interworking system between a local network using a private IP and a public network using a public IP includes a STUN server and an application layer gateway (ALG) server. The STUN server provides binding information of header information of a public IP binding request. The application layer gateway (ALG) server performs a public IP binding request with header information changed by IP masquerading, and performs routing by applying the received binding information to media receiving address information of a SIP message.
摘要翻译：公开了使用不同IP地址格式的IP网络，应用层网关（ALG）服务器，网络地址转换器，互通方法和SIP消息路由方法之间的互通系统。使用专用IP的本地网络和使用公共IP的公共网络之间的互通系统包括STUN服务器和应用层网关（ALG）服务器。 STUN服务器提供公有IP绑定请求的头信息的绑定信息。应用层网关（ALG）服务器执行具有由IP伪装改变的头信息的公共IP绑定请求，并通过将接收到的绑定信息应用于SIP消息的媒体接收地址信息来执行路由。

57. 发明申请

US20070151298A1 Vapor axial deposition apparatus and method for fabricating soot preform using the same 审中-公开
标题翻译：蒸气轴向沉积装置及其制造方法
公开(公告)号：US20070151298A1
公开(公告)日：2007-07-05
申请号：US11489959
申请日：2006-07-20
申请人： Jin-Haing Kim , Ho-Jin Lee , Mun-Hyun Do , Jae-Hyeon Seong , Yun-Ho Kim
发明人： Jin-Haing Kim , Ho-Jin Lee , Mun-Hyun Do , Jae-Hyeon Seong , Yun-Ho Kim
IPC分类号： C03B37/07 , C03B37/018 , F27B1/26
CPC分类号： C03B37/0142 , C03B2207/50 , C03B2207/70
摘要： Vapor Axial Deposition (VAD) apparatus and method is provided. The VAD apparatus includes a first torch, a second torch, a thermometer, a controller, and a moving device. The first torch grows a core by depositing a soot at an end of a soot preform arranged on an axis. The second torch grows a clad by depositing a soot on the face of the core. The thermometer detects the temperature of the end of the soot preform along the axis and the temperature of an other/lower portion of the core. The controller calculates a difference between a temperature (T1) of the end of the soot preform and a temperature (T4) of a lower portion of the core and controls the movement of the soot preform according to the difference. The moving device moves the soot preform along the axis according to the instruction of the controller.
摘要翻译：提供蒸气轴向沉积（VAD）装置和方法。 VAD装置包括第一炬，第二炬，温度计，控制器和移动装置。第一个火炬通过在布置在轴上的烟灰预制件的端部沉积烟灰来生长核心。第二个火炬通过在核心的表面上放置一个烟灰来生长一个包裹。温度计检测烟炱预制件的端部沿着轴的温度和芯的另一/下部的温度。控制器计算烟灰预制件的端部的温度（T 1）与芯部的下部的温度（T 4）之间的差异，并根据差异来控制烟灰预制件的移动。移动装置根据控制器的指示沿着轴移动烟灰预制件。

58. 发明申请

US20070089464A1 Apparatus for fabricating soot preform 审中-公开
标题翻译：用于制造烟灰预制件的装置
公开(公告)号：US20070089464A1
公开(公告)日：2007-04-26
申请号：US11489883
申请日：2006-07-20
申请人： Yun-Ho Kim , Mun-Hyun Do , Ho-Jin Lee , Jin-Seong Yang , Jae-Hyeon Seong
发明人： Yun-Ho Kim , Mun-Hyun Do , Ho-Jin Lee , Jin-Seong Yang , Jae-Hyeon Seong
IPC分类号： C03B37/07 , C03B37/018
CPC分类号： C03B37/01413 , C03B2207/81 , C03B2207/87 , Y02P40/57
摘要： An apparatus for fabricating a soot preform includes at least one torch for depositing soot generated by flame hydrolysis on the soot preform. A vaporizer vaporizes a liquid source material. A heater heats a dilution gas. The vaporizer and the heater respectively supply, to the torch, the vaporized source material and the heated dilution gas together through a single pipe.
摘要翻译：用于制造烟灰预制件的装置包括至少一个用于在烟炱预制件上沉积通过火焰水解产生的烟灰的炬。蒸发器蒸发液体源材料。加热器加热稀释气体。蒸发器和加热器分别通过单个管道将蒸发的源材料和加热的稀释气体一起提供给割炬。

59. 发明申请

US20050141472A1 Apparatus and method for compensating forward link rain attenuation based on adaptive transmission scheme for interactive satellite transmission system 失效
标题翻译：基于交互式卫星传输系统的自适应传输方案补偿前向链路衰减的装置和方法
公开(公告)号：US20050141472A1
公开(公告)日：2005-06-30
申请号：US10892679
申请日：2004-07-15
申请人： Minsu Shin , Joon-Gyn Ryu , Hoon Jeong , Ho-Jin Lee
发明人： Minsu Shin , Joon-Gyn Ryu , Hoon Jeong , Ho-Jin Lee
IPC分类号： H04B7/185 , H04L1/00 , H04L12/56 , H04Q7/00
CPC分类号： H04B7/18513 , H04L1/0003 , H04L1/0009 , H04W4/18 , H04W84/06
摘要： Provided are a forward link rain attenuation compensating apparatus using an adaptive transmission scheme in an interactive satellite communication system and a method thereof. The apparatus separates the mobile stations into clear-sky mobile stations and mobile stations in the state of rain attenuation and makes the clear-sky mobile stations receive data having a high data transmission efficiency at a high-speed while making the rain attenuation mobile stations receive the data continuously although the data transmit rate is low by making each of the two kinds of mobile stations receive data frames of a different transmission method, and provides a method therefor. The apparatus includes: a resource manager, a transmitting data format converter, a forward modulator, a backward demodulator, a receiving data format converter.
摘要翻译：提供一种在交互式卫星通信系统中使用自适应传输方案的前向链路雨衰补偿装置及其方法。该装置将移动台分为处于雨衰状态的空中移动台和移动台，使得天空清晰的移动台高速接收高数据传输效率的数据，同时使雨衰移移动站接收通过使两种移动站中的每一个接收到不同传输方式的数据帧，数据传输速率低，并且提供了一种方法。该装置包括：资源管理器，发送数据格式转换器，前向调制器，反向解调器，接收数据格式转换器。

60. 发明授权

US06885668B1 Apparatus for and method of processing low-speed circuit data and high-speed packet data 失效
标题翻译：用于处理低速电路数据和高速分组数据的装置和方法
公开(公告)号：US06885668B1
公开(公告)日：2005-04-26
申请号：US09543822
申请日：2000-04-05
申请人： Ho-Jin Lee , Chae-Moon Lee , Duck-Young Seo , Jin-Hyung Yang
发明人： Ho-Jin Lee , Chae-Moon Lee , Duck-Young Seo , Jin-Hyung Yang
IPC分类号： H04L12/28 , H04L12/70 , H04W36/18 , H04W88/08 , H04W88/12 , H04W88/14 , H04L12/56
CPC分类号： H04L12/5601 , H04L49/606 , H04L2012/5607 , H04L2012/5676 , H04W36/18 , H04W88/08 , H04W88/12 , H04W88/14
摘要： Disclosed is an apparatus and a method capable of processing low-speed circuit data lower than 64 kbps and high-speed packet data higher than 64 kbps in which a high-speed data network is constructed by converting an LCIN (local CDMA (code division multiple access) interconnection network) for supplying a communication path of packet data among sub-systems in a BSC (base station controller) of CDMA system to an ATM (asynchronous transfer mode) for processing high-speed data, installing a TSB (transcoder selector bank) or an SDU (selector distribution unit) for processing high-speed packet data higher than 64 kbps in the BSC, and linking an ATM switch to an MSC (mobile switching center) to provide a high-speed data service with respect to other network. The TSB for processing voice data and low-speed data lower than 64 kbps and high-speed data higher than 64 kbps, or the TSB for processing high-speed data higher than 64 kbps is provided to the BSC, thus allowing high-speed data processing up to 2 mbps, high-speed data service, multimedia service like a video service, and high-speed Internet service.
摘要翻译：公开了一种能够处理低于64kbps的低速电路数据和高于64kbps的高速分组数据的装置和方法，其中高速数据网络通过转换LCIN（本地CDMA（码分多址）接入）互连网络），用于将CDMA系统的BSC（基站控制器）中的子系统之间的分组数据的通信路径提供给用于处理高速数据的ATM（异步传输模式），安装TSB（代码转换器选择器组）或用于在BSC中处理高于64kbps的高速分组数据的SDU（选择器分配单元），以及将ATM交换机链接到MSC（移动交换中心）以提供关于其他网络的高速数据服务。用于处理语音数据和低于64kbps的低速数据的TSB和高于64kbps的高速数据，或用于处理高于64kbps的高速数据的TSB提供给BSC，从而允许高速数据处理高达2 Mbps，高速数据服务，视频服务等多媒体服务，高速上网服务。

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