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51. 发明授权

US06220091B1 Liquid level pressure sensor and method 失效
标题翻译：液位压力传感器及方法
公开(公告)号：US06220091B1
公开(公告)日：2001-04-24
申请号：US08976961
申请日：1997-11-24
申请人： Fufa Chen , Yu Chang , Gwo Tzu
发明人： Fufa Chen , Yu Chang , Gwo Tzu
IPC分类号： G01F2318
CPC分类号： G01F23/168 , C23C16/4482
摘要： The present invention provides methods and systems for forming deposition films on semiconductor wafers. In particular, the present invention measures the amount of liquid remaining in a bubbler ampule of a semiconductor processing system used for chemical vapor deposition (CVD) on a semiconductor wafer. More particularly, measurements are made when gas has stopped flowing through the ampule, and the liquid is in a static condition. The system of the present invention comprises a container containing a liquid, a gas inlet for introduction of gas into the liquid, a gas outlet, and a pressure transducer fluidly connected to the gas inlet and the gas outlet. The device measures the amount of liquid in a bubbler ampule through measurements of gas pressure differential between gas exiting a nozzle near the bottom of the liquid and gas located above the level of the liquid. The depth of liquid remaining in the ampule may be extrapolated from the measured pressure differential.
摘要翻译：本发明提供了在半导体晶片上形成沉积膜的方法和系统。特别地，本发明测量在半导体晶片上用于化学气相沉积（CVD）的半导体处理系统的起泡器安瓿中剩余的液体量。更具体地，当气体已经停止流过安瓿并且液体处于静止状态时进行测量。本发明的系统包括容纳液体的容器，用于将气体引入液体的气体入口，气体出口和与气体入口和气体出口流体连接的压力传感器。该装置通过测量离开位于液体底部附近的喷嘴的气体和位于液体高度之上的气体之间的气压差来测量起泡器安瓿中的液体量。保留在安瓿中的液体的深度可以从测量的压力差外推。

52. 发明授权

US06199927B1 Robot blade for handling of semiconductor substrates 有权
标题翻译：用于处理半导体衬底的机器人刀片
公开(公告)号：US06199927B1
公开(公告)日：2001-03-13
申请号：US09294440
申请日：1999-01-21
申请人： Behzad Shamlou , Wen Chiang Tu , Xuyen Pham , Yu Chang , Daniel O. Clark , Shun Wu
发明人： Behzad Shamlou , Wen Chiang Tu , Xuyen Pham , Yu Chang , Daniel O. Clark , Shun Wu
IPC分类号： B25J1506
CPC分类号： H01L21/6838 , H01L21/68707 , Y10S294/907 , Y10S414/141
摘要： The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the substrate handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450° C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant. A preferred material for construction of the substrate handling blade is single crystal sapphire. Other single crystal materials, such as single crystal silicon and single crystal silicon carbide should also perform well. In a particularly preferred embodiment of the substrate handling blade, a capacitance sensor is used to indicate the presence of a semiconductor substrate on the surface of the handling blade and a structure through which vacuum is applied may be used to hold (chuck) the semiconductor substrate to the surface of the handling blade.
摘要翻译：通过使用作为半导体基板处理叶片的构造的主要材料的特殊材料或作为表面上的涂层，由于半导体基板和机器人基板处理刮板之间的摩擦而产生的颗粒污染物的量已经大大降低的基板处理叶片。特别地，专用材料必须在超过约450℃的温度下显示所需的刚度; 专用材料也必须具有在摩擦半导体衬底时不会产生微粒的耐磨表面。耐磨表面需要非常光滑，表面光洁度小于1.0微英寸，优选小于0.2微英寸。此外，表面必须基本上无空隙。在最优选的实施例中，衬底处理刀片的上顶表面由平滑，无孔和耐磨的电介质材料构成。用于构造基板处理叶片的优选材料是单晶蓝宝石。其他单晶材料，如单晶硅和单晶碳化硅也应表现良好。在基板处理叶片的特别优选的实施例中，使用电容传感器来表示在处理叶片的表面上存在半导体基板，并且可以使用施加真空的结构来保持（卡盘）半导体基板到处理叶片的表面。

53. 发明授权

US6143084A Apparatus and method for generating plasma 失效
标题翻译：用于产生等离子体的装置和方法
公开(公告)号：US6143084A
公开(公告)日：2000-11-07
申请号：US45165
申请日：1998-03-19
申请人： Steven T. Li , Andrew J. Ruspini , Henry Ho , Yu Chang , Aihua Chen , Binh Bui
发明人： Steven T. Li , Andrew J. Ruspini , Henry Ho , Yu Chang , Aihua Chen , Binh Bui
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , C23F1/02
CPC分类号： H01J37/32862 , H01J37/321 , H01J2237/335
摘要： An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, and a magnetic device which confines the plasma primarily within a center region of the generation chamber.
摘要翻译：一种包括半导体处理室，等离子体发生器和连接半导体处理室和等离子体发生器的管道的装置。等离子体发生器包括发电室，在发电室内产生离子等离子体的射频发生器以及将等离子体主要限制在发电室的中心区域内的磁性装置。

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