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51. 发明授权

US06818570B2 Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength 有权
标题翻译：形成具有低介电常数和高机械强度的含硅绝缘膜的方法
公开(公告)号：US06818570B2
公开(公告)日：2004-11-16
申请号：US10351669
申请日：2003-01-24
申请人： Naoto Tsuji , Yukihiro Mori , Satoshi Takahashi , Kiyohiro Matsushita , Atsuki Fukazawa , Michael Todd
发明人： Naoto Tsuji , Yukihiro Mori , Satoshi Takahashi , Kiyohiro Matsushita , Atsuki Fukazawa , Michael Todd
IPC分类号： H01L2100
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , Y10S438/91
摘要： A silicon-containing insulation film having high mechanical strength is formed on a semiconductor substrate by (a) introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed; (b) applying radio-frequency power to create a plasma reaction space inside the reaction chamber; and (c) controlling a flow of the reaction gas and an intensity of the radio-frequency power.
摘要翻译：通过（a）引入反应气体，在半导体衬底上形成具有高机械强度的含硅绝缘膜，该反应气体包含（i）包含含有可交联基团的含硅烃化合物的源气体，（ii）将气体和（iii）惰性气体连接到放置基板的反应室中; （b）施加射频功率以在反应室内产生等离子体反应空间; 和（c）控制反应气体的流动和射频功率的强度。

52. 发明授权

US08647722B2 Method of forming insulation film using plasma treatment cycles 有权
标题翻译：使用等离子体处理循环形成绝缘膜的方法
公开(公告)号：US08647722B2
公开(公告)日：2014-02-11
申请号：US12618419
申请日：2009-11-13
申请人： Akiko Kobayashi , Akira Shimizu , Kuo-wei Hong , Nobuyoshi Kobayashi , Atsuki Fukazawa
发明人： Akiko Kobayashi , Akira Shimizu , Kuo-wei Hong , Nobuyoshi Kobayashi , Atsuki Fukazawa
IPC分类号： H05H1/24
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/56
摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
摘要翻译：基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理使用已经被等离子体激活的处理气体形成膜。

53. 发明授权

US08563443B2 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen 有权
标题翻译：通过ALD使用含有硅，烃和卤素的前体沉积介电膜的方法
公开(公告)号：US08563443B2
公开(公告)日：2013-10-22
申请号：US13566069
申请日：2012-08-03
申请人： Atsuki Fukazawa
发明人： Atsuki Fukazawa
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45542 , C23C16/45553 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.
摘要翻译：通过原子层沉积（ALD）在半导体衬底上形成具有至少Si-N，Si-C或Si-B键的电介质膜的方法包括：以脉冲提供前体以将前体吸附在表面上的基材; 在表面上以脉冲形式提供反应气体，而不会重叠前体的供应; 使表面上的前体和反应气体反应; 并重复上述步骤以在基片上形成至少具有Si-N，Si-C或Si-B键的电介质膜。该前体在其分子中具有至少一个Si-C或Si-N键，至少一个烃和至少两个与硅结合的卤素。

54. 发明申请

US20110217838A1 METHOD FOR FORMING INTERCONNECT STRUCTURE HAVING AIRGAP 有权
标题翻译：用于形成具有AIRGAP的互连结构的方法
公开(公告)号：US20110217838A1
公开(公告)日：2011-09-08
申请号：US12718731
申请日：2010-03-05
申请人： Julian J. Hsieh , Nobuyoshi Kobayashi , Akira Shimizu , Kiyohiro Matsushita , Atsuki Fukazawa
发明人： Julian J. Hsieh , Nobuyoshi Kobayashi , Akira Shimizu , Kiyohiro Matsushita , Atsuki Fukazawa
IPC分类号： H01L21/768
CPC分类号： H01L21/768
摘要： A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
摘要翻译：一种用气隙形成互连结构的方法，包括：提供在衬底上形成沟槽的结构; 通过等离子体增强的原子层沉积在沟槽的侧壁上沉积间隔氧化物层作为侧壁间隔物; 用铜填充具有侧壁间隔物的沟槽; 去除侧壁间隔件以形成气隙结构; 并且封装气隙结构，其中在填充的铜和沟槽的侧壁之间形成气隙。

55. 发明授权

US07842622B1 Method of forming highly conformal amorphous carbon layer 有权
标题翻译：形成高保形无定形碳层的方法
公开(公告)号：US07842622B1
公开(公告)日：2010-11-30
申请号：US12467017
申请日：2009-05-15
申请人： Woo-Jin Lee , Atsuki Fukazawa
发明人： Woo-Jin Lee , Atsuki Fukazawa
IPC分类号： H01L21/312 , C23C16/26
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/02274 , H01L21/0337
摘要： A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside which the semiconductor substrate is placed; depositing a conformal amorphous hydrogenated carbon layer on the irregular surface of the semiconductor substrate by plasma CVD; and controlling the deposition of the conformal ratio of the depositing conformal amorphous hydrogenated carbon layer. The controlling includes (a) adjusting a step coverage of the conformal amorphous hydrogenated carbon layer to about 30% or higher as a function of substrate temperature, and (b) adjusting a conformal ratio of the conformal amorphous hydrogenated carbon layer to about 0.9 to about 1.1 as a function of RF power and/or argon gas flow rate.
摘要翻译：在半导体衬底的不规则表面上形成共形无定形氢化碳层的方法包括：使含烃前体气化; 将蒸发的前体和氩气引入其中放置半导体衬底的CVD反应室; 通过等离子体CVD在半导体衬底的不规则表面上沉积共形无定形氢化碳层; 并控制沉积的共形无定形氢化碳层的共形比的沉积。控制包括（a）将保形无定形氢化碳层的台阶覆盖率调整为基板温度的函数为约30％或更高，和（b）调整共形无定形氢化碳层的共形比为约0.9至约作为RF功率和/或氩气流量的函数。

56. 发明申请

US20100143609A1 METHOD FOR FORMING LOW-CARBON CVD FILM FOR FILLING TRENCHES 有权
标题翻译：用于形成用于填充凝胶的低碳CVD膜的方法
公开(公告)号：US20100143609A1
公开(公告)日：2010-06-10
申请号：US12331309
申请日：2008-12-09
申请人： Atsuki Fukazawa , Hisashi Tazawa , Shigeyuki Onizawa
发明人： Atsuki Fukazawa , Hisashi Tazawa , Shigeyuki Onizawa
IPC分类号： B01J19/12
CPC分类号： C23C16/045 , C23C16/36 , C23C16/56 , H01L21/02126 , H01L21/0223
摘要： A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
摘要翻译：在具有沟槽的基板上通过CVD形成低碳含硅膜的方法包括：在其分子中引入具有三个以下烃单元的含硅化合物，其沸点为35℃至220℃ 。向气体施加RF功率; 以及在具有沟槽的衬底上沉积膜，其中将衬底控制在使得含硅化合物的组分在衬底上至少部分地液化的温度，从而用膜填充沟槽。

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