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    • 55. 发明专利
    • CLEANING METHOD
    • JPH11307497A
    • 1999-11-05
    • JP12950398
    • 1998-04-23
    • OMI TADAHIROULTLA CLEAN TECHNOLOGY KAIHATS
    • II TOSHIHIROOMI TADAHIRONITTA TAKEHISA
    • G02F1/1333H01L21/304
    • PROBLEM TO BE SOLVED: To realize a rinse water or a chemical by which (1) a surface oxide film is hardly formed, (2) particles are removed or the adhesion of particles is prevented, (3) the hydrogen termination of a silicon atom is promoted, in the chemical cleaning step or the rinsing step using pure water or ultrapure water in the semiconductor wet cleaning process. SOLUTION: In this cleaning method, the forming of a surface oxide film is suppressed by adding hydrogen gas to pure water or ultrapure water used for the rinsing, and, when a silicon substrate is cleaned, hydrogen termination on the surface is promoted. Cleaning is conducted while giving a vibration at a frequency of 500 kHz or more to the pure water or ultrapure water to which hydrogen gas are added in order to remove particles or prevent the readhesion of particles. The effect of preventing the adhesion of particles is produced in addition to the conventional etching effect on the surface by adding ozone or hydrogen peroxide having an oxydizing ability to hydrofluoric acid. By the following step in which cleaning with a rinsing water to which hydrogen gas is added to the pure water or ultrapure water, the termination of hydrogen which is slowed by adding the ozone or the hydrogen peroxide is promoted.
    • 57. 发明专利
    • PLASMA DEVICE
    • JPH11297495A
    • 1999-10-29
    • JP9798098
    • 1998-04-09
    • OMI TADAHIROULTLA CLEAN TECHNOLOGY KAIHATS
    • OMI TADAHIROHIRAYAMA MASAKINITTA TAKEHISA
    • H05H1/46H01L21/205H01L21/302H01L21/3065
    • PROBLEM TO BE SOLVED: To maintain high plasma density, even if a processing object is diametrically enlarged by directly connecting an electrode to an electric power supply means by a conductor, without arranging a matching circuit constituting a distributed constant line and a matching box between the electrode and the electric power supply means in the matching circuit. SOLUTION: A plasma device is constituted by directly connecting an electrode 107 and an electric power supply means 101 by a conductor 105 to reduce power loss supplied to the electrode from the electric power supply means, except for a matching circuit constituting a distributed constant line and a matching box almost decided in characteristic impedance. The output of the electric power supply means 101 is connected directly to the electrode 107 via the conductor 105 so that a processing object 108 is arranged on the electrode 107. A multistage high frequency amplifier 103 uses an electric circuit constituted of plural bipolar transistors, an inductor, a capacitor and a DC power source, and the matching circuit 104 does not use a semi-fixed variable capacitor but rather uses a variable capacitor.