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51. 发明公开

EP2692644A4 SPACECRAFT 有权
标题翻译：航天器
公开(公告)号：EP2692644A4
公开(公告)日：2014-09-24
申请号：EP12765732
申请日：2012-02-24
申请人： MITSUBISHI HEAVY IND LTD
发明人： KURODA YOSHIKATSU , IKEBUCHI HIROSHI , MASUKAWA KAZUNORI
IPC分类号： B64G1/44 , H01L31/042 , H02S40/22
CPC分类号： H01L31/052 , B64G1/44 , H01L31/0543 , H01L31/0547 , H02S20/30 , Y02E10/52

52. 发明公开

EP2244288A4 SEMICONDUCTOR ELEMENT MODULE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体元件模块的及其制备方法
公开(公告)号：EP2244288A4
公开(公告)日：2011-11-02
申请号：EP08711241
申请日：2008-02-14
申请人： MITSUBISHI HEAVY IND LTD
发明人： UENO DAISHI , WADA TARO , FUNAYAMA MASAHIRO , KURODA YOSHIKATSU , KONDO YUICHI , KOBAYASHI SHINICHI , NAKANO KOJI , FUJIWARA KENJI , TAKESHITA TERUO
IPC分类号： H01L23/12 , H01L21/52 , H01L23/051 , H01L23/373 , H01L23/538 , H01L25/07 , H01L25/18 , H01L29/739
CPC分类号： H01L23/5385 , H01L23/051 , H01L23/3735 , H01L24/19 , H01L25/072 , H01L25/18 , H01L2924/01079 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2924/00

53. 发明公开

EP1365453A4 IMAGE SENSOR AND PRODUCTION METHOD THEREFORE 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：EP1365453A4
公开(公告)日：2008-04-30
申请号：EP02701675
申请日：2002-03-01
申请人： MITSUBISHI HEAVY IND LTD , JAPAN AEROSPACE EXPLORATION
发明人： KURODA YOSHIKATSU , TAKAHASHI TADAYUKI
IPC分类号： G01T1/24 , H01L27/146 , G01J1/00 , H01L21/60 , H01L27/14 , H01L27/142 , H01L31/00
CPC分类号： H01L27/14676 , H01L24/11 , H01L24/13 , H01L27/14634 , H01L27/14636 , H01L27/1469 , H01L2224/11 , H01L2224/11003 , H01L2224/1134 , H01L2224/11822 , H01L2224/13 , H01L2224/1308 , H01L2224/13082 , H01L2224/13109 , H01L2224/13144 , H01L2224/13609 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： An image sensor having a 3-D structure in which a sensor element array (11) comprising a plurality of sensor elements of CdTe arranged in a two-dimensional matrix form is mounted on an IC substrate (15) via a connection layer (13). The connection layer (13) comprises a plurality of stud bumps (130) each formed on each IC's electrode so as to extract a signal detected by each sensor element to the IC and provided on the connection layer (13), and a plurality of thin film layer (131) formed on the tip end of each stud bump (130) and electrically connected to the electrode (112) of each sensor element.

54. 发明专利

JP2002261262A IMAGE SENSOR AND MANUFACTURING METHOD 失效
公开(公告)号：JP2002261262A
公开(公告)日：2002-09-13
申请号：JP2001057346
申请日：2001-03-01
申请人： MITSUBISHI HEAVY IND LTD , INST OF SPACE & ASTRONAUTICAL
发明人： KURODA YOSHIKATSU , TAKAHASHI TADAYUKI
IPC分类号： G01T1/24 , G01J1/00 , H01L21/60 , H01L27/14 , H01L27/142 , H01L27/146 , H01L31/00
摘要： PROBLEM TO BE SOLVED: To provide an image sensor, in which even if there are provided many sensor elements, the respective sensor elements can be readily connected electrically with an amplifier IC and which has a high sensitivity, and to provide its manufacturing method. SOLUTION: A plurality of sensor elements made of CdTe are arranged into a two-dimensional matrix to form a sensor matrix array 11, which is mounted on an IC substrate 15 via a connection layer 13, to form an image sensor with a three-dimensional structure. The connection layer 13 has a plurality of stud bumps 130, which are formed in the connection layer 13 on the respective electrodes of the IC, in order to draw out signals detected by the respective sensor elements into the IC, and a plurality of thin film layers 112, which are formed on the tips of the respective stud bumps 130 and are connected electrically with electrodes of the respective sensor elements.

55. 发明专利

JPH11148975A MICROCOMPUTER AND ITS ACCESS SPEED CONTROL 失效
公开(公告)号：JPH11148975A
公开(公告)日：1999-06-02
申请号：JP31325397
申请日：1997-11-14
申请人： JAPAN NUCLEAR CYCLE DEV INST , MITSUBISHI HEAVY IND LTD
发明人： WADA TAKAO , ISHIBASHI YUZO , KAWAMURA AKIRA , KURODA YOSHIKATSU
IPC分类号： G21C17/00 , G01T1/00 , G06F11/00 , G06F15/78
摘要： PROBLEM TO BE SOLVED: To provide a microcomputer that can use a large dose even under radiation environment, and its access speed control method. SOLUTION: The total amount of radiation received by a microcomputer is obtained based on the detection signal of a radiation detection element 21, and an access speed is controlled by a CPU 11 according to the obtained total amount of radiation and table data being set in advance by a test and stored in a memory parl 12. Also, the CPU 11 and the memory 12 that the CPU 11 accesses and various kinds of interfaces 13 are integrated into the same chip (ASIC) so that each part of the same chip can positively deteriorate and change in the same direction due to radiation.

56. 发明专利

JPH08148616A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08148616A
公开(公告)日：1996-06-07
申请号：JP28805894
申请日：1994-11-22
申请人： MITSUBISHI HEAVY IND LTD
发明人： KURODA YOSHIKATSU , ISHII SHIGERU
IPC分类号： H01L23/34
摘要： PURPOSE: To realize a compact, lightweight semiconductor having a high radiation hardening ability by providing a heater circuit inside a substrate and by forming a package material for semiconductor device with a tungsten alloy or a ceramic material. CONSTITUTION: A semiconductor 1 and electronic parts are mounted on a multi- layer substrate 3 with a built-in heater inside a radiation shielding device covered with a tungsten alloy package 7 and a tungsten alloy package cover 11 sealed with solder 10. Specially, a heater circuit 4 is provided inside the multi- layer substrate 3 with a built-in heater. Also, the package material of the semiconductor device is made of a tungsten alloy. In this way, a device for removing the influence of the radiation is added to the inside of the circuit substrate 3, thereby permitting a configuration of a compact, lightweight semiconductor device. Also, the inside of the semiconductor is activated and an electric charge generated during irradiation is decreased, thereby permitting great enhancement in radiation hardening ability.

57. 发明专利

JPH0778898A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0778898A
公开(公告)日：1995-03-20
申请号：JP22299493
申请日：1993-09-08
申请人： MITSUBISHI HEAVY IND LTD
发明人： KURODA YOSHIKATSU , SHIBAYAMA NAOKI
IPC分类号： H01L23/04
摘要： PURPOSE:To provide a semiconductor device manufactured in a structure where a large-scale semiconductor device can be realized contriving the effective utilization of a space. CONSTITUTION:A container 12, in the interior of which a semiconductor element is housed, is formed of a base plate, side frames and a cover 15 into an octagonal form and at the same time, mounting parts 17 are respectively formed between the angular parts and the angular parts of the external shape of the container 12 and the container 12 is formed of at least some one of a Cu alloy, an Fe alloy and a ceramic material.

58. 发明专利

JP2003142670A SEMICONDUCTOR IMAGE SENSOR HAVING HOLE TYPE ELECTRODE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003142670A
公开(公告)日：2003-05-16
申请号：JP2001339711
申请日：2001-11-05
申请人： MITSUBISHI HEAVY IND LTD , INST OF SPACE & ASTRONAUTICAL
发明人： KURODA YOSHIKATSU , TAKAHASHI TADAYUKI , MIZUNO YASUSHI
IPC分类号： H01L27/14 , G01T1/24 , H01L27/146 , H01L31/0296 , H04N5/32
摘要： PROBLEM TO BE SOLVED: To provide an image sensor wherein detection is enabled with high sensitivity even in hard X-ray energy band, and to provide its manufacturing method. SOLUTION: This image sensor 10 is provided with a CdTe plate 13, a plurality of hole type electrode 12 which are arranged along a thickness direction of the CdTe plate 13 at prescribed intervals; and a voltage supplying means for supplying a voltage to the respective hole type electrodes 12, and a voltage by making the respective hole type electrodes adjacent to a plurality of anodes cathodes, when the plurality of hole type electrodes 12 which are not adjacent to each other are made the anodes. On a detecting surface of the image sensor 10, a sensor element array in which a plurality of sensor elements are arranged in a matrix type is formed. The sensor element is constituted of an anode, a plurality of cathodes and CdTe existing between the anode and the plurality of cathodes.

59. 发明专利

JPH10311878A SEMICONDUCTOR RADIATION DETECTING ELEMENT 失效
公开(公告)号：JPH10311878A
公开(公告)日：1998-11-24
申请号：JP12224697
申请日：1997-05-13
申请人： DORYOKURO KAKUNENRYO , MITSUBISHI HEAVY IND LTD
发明人： WADA TAKAO , ISHIBASHI YUZO , ISHII SHIGERU , KURODA YOSHIKATSU
IPC分类号： G01T1/24 , G01T1/26 , H01L31/09 , H01L31/115
摘要： PROBLEM TO BE SOLVED: To perform a precise detection without being influenced by the temperature fluctuation of a detecting element by detecting radiation dose on the basis of the ratio of resistance values of a plurality of semiconductors having the same temperature dependency of resistance value change ratio and differed in thickness. SOLUTION: When a radiation is absorbed, a fixed positive charge of a quantity according to the radiation total dose is generated in an insulating layer 12 and an insulating film 14. This fixed positive charge increases the resistance values of the parts contact with the insulating layer 12 and the insulating film 14 in p-type Si layers 13a, 13b. The respective resistance value change ratios of the p-type Si layers 13a, 13b are differed depending on thickness. The output value of an electrode 15b in which the voltage applied to an electrode 15a is partially divided by the p-type Si layers 13a, 13b is detected according to the difference in resistance value change ratio between the p-type Si layers 13a, 13b, whereby the radiation total dose can be measured. Since the p-type Si layers 13a, 13b of this detecting element can be formed in the same manufacturing process, a precise detection can be performed with being hardly influenced by the error by temperature fluctuation of the detecting element itself.

60. 发明专利

JPH0817956A SEMICONDUCTOR VESSEL AND DEVICE 失效
公开(公告)号：JPH0817956A
公开(公告)日：1996-01-19
申请号：JP14311494
申请日：1994-06-24
申请人： MITSUBISHI HEAVY IND LTD
发明人： SHIBAYAMA NAOKI , KURODA YOSHIKATSU
IPC分类号： H01L23/28 , H01L23/02 , H01L23/06 , H01L23/08 , H01L23/24 , H01L23/29 , H01L23/31
摘要： PURPOSE:To obtain a semiconductor vessel and device having optimum shielding capacity from the radiation e.g. gamma ray, neutron, etc., by a method wherein a material powder comprising graphite, cadmium oxide, etc., and iron powder/or lead powder are mixed with each other at a specific volume percentage to be pressure molded. CONSTITUTION:A substrate 19 mounted with a semiconductor chip 18 is arranged in a semiconductor vessel 11. In this semiconductor vessel 11, the material powder is composed of a mixture of a neutron moderator comprising graphite, a neutron absorbent comprising cadmium oxide and a gamma ray shielding material comprising tungsten oxide. Next, this material powder are evenly mixed with iron powder and/or lead powder to be pressure molded at a temperature exceeding the melting point of iron and/or lead. At this time, mixing ratio of the material powder and iron powder and/or lead powder is specified to be 90-95% of the material powder and 10-5% of iron powder and/or lead powder in the volume percentage. Through these procedures, the semiconductor vessel 11 having optimum shielding capacity from the radiation e.g. gamma ray, neutron, etc., can be obtained.

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