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51. 发明申请

US20080277061A1 WAFER EDGE CLEANER 审中-公开
公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译：本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料峰值功率密度。

52. 发明申请

US20080223522A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080223522A1
公开(公告)日：2008-09-18
申请号：US11835455
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32091 , H01J37/32935 , H01J37/32963
摘要： The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.
摘要翻译：本发明提供了一种等离子体处理室，即使温度计没有安装在处理室中也能够确定处理室中的温度上升的状态。一种等离子体处理装置，包括：处理室，用于对待处理的样品进行等离子体处理; 用于向处理室供应气体的装置; 用于减少处理室中的压力的排气装置; 用于产生等离子体的高频电源; 和放置有待处理样品的电极，设置有用于确定升温放电终点的等离子体发射监测器和用于确定升温放电终点的装置，两者用于确定终点在等离子体处理之前进行的升温放电点。

53. 发明授权

US07145146B2 Micro-spectroscopic measuring device and micro-chemical system 失效
标题翻译：微光谱测量装置和微观化学系统
公开(公告)号：US07145146B2
公开(公告)日：2006-12-05
申请号：US10788275
申请日：2004-03-01
申请人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
发明人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
IPC分类号： G01N21/35
CPC分类号： G01N21/31 , B01L3/502715 , B01L2200/027 , B01L2300/0654 , B01L2300/0816 , B01L2300/0887 , G01N21/05 , G01N2021/0346 , G01N2021/058 , G01N2201/0873
摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.
摘要翻译：具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

54. 发明申请

US20060254717A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20060254717A1
公开(公告)日：2006-11-16
申请号：US11213737
申请日：2005-08-30
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Tomoyuki Tamura , Kenji Maeda
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , C23F4/00 , H01J37/32009 , H01J37/32532 , H01L21/02087 , H01L21/67109 , H01L21/6831 , H01L21/68707 , H01L21/68742
摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.
摘要翻译：等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源，外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

55. 发明申请

US20060016560A1 Plasma processing apparatus 有权
公开(公告)号：US20060016560A1
公开(公告)日：2006-01-26
申请号：US11182793
申请日：2005-07-18
申请人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
发明人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.

56. 发明授权

US09368377B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09368377B2
公开(公告)日：2016-06-14
申请号：US11836219
申请日：2007-08-09
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , C23C16/46 , F25B41/06
CPC分类号： H01L21/67109 , C23C16/463 , F25B41/062 , H01J37/32431 , H01J2237/2001 , H01L21/6831 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.
摘要翻译：本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。设置在静电吸附电极中的制冷剂流路用作蒸发器。制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。

57. 发明授权

US09150964B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US09150964B2
公开(公告)日：2015-10-06
申请号：US12191373
申请日：2008-08-14
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
IPC分类号： C23C14/00 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译：通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量。用于容纳气体扩散器的气体扩散室安装在真空处理装置中。

58. 发明授权

US08833089B2 Plasma processing apparatus and maintenance method therefor 有权
标题翻译：等离子体处理装置及其维护方法
公开(公告)号：US08833089B2
公开(公告)日：2014-09-16
申请号：US12538986
申请日：2009-08-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： F25B9/00 , F25B45/00 , H01J37/32
CPC分类号： H01J37/32091 , F25B45/00 , F25B2500/06 , H01J2237/2001
摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.
摘要翻译：在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护。在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂再次。

59. 发明授权

US08333847B2 Chemical conversion treatment liquid 有权
标题翻译：化学转化处理液
公开(公告)号：US08333847B2
公开(公告)日：2012-12-18
申请号：US13039656
申请日：2011-03-03
申请人： Masaru Izawa , Kunio Goto
发明人： Masaru Izawa , Kunio Goto
IPC分类号： C23C22/18 , C23C22/12
CPC分类号： C23C22/08 , C23C22/00 , C23C22/12 , C23C22/18 , Y10T428/13 , Y10T428/264 , Y10T428/265
摘要： A chemical conversion treatment liquid which can stably form a phosphate-type chemical conversion film on a steel material for a joint portion of an oil well steel pipe containing 0.5-13% Cr is developed.Using a chemical conversion treatment liquid to which a prescribed amount of potassium is added, a chemical conversion film containing a prescribed amount of potassium compounds and having a prescribed thickness can be formed on the threaded surface of a joint portion of an oil well steel pipe.
摘要翻译：开发了可以在含有0.5-13％Cr的油井钢管的接头部分的钢材上稳定地形成磷酸酯型化学转化膜的化学转化处理液。使用含有规定量的钾的化学转化处理液，能够在油井钢管的接合部的螺纹面上形成含有规定量的钾化合物并具有规定厚度的化学转化膜。

60. 发明申请

US20120273132A1 Vacuum Processing Apparatus And Plasma Processing Apparatus With Temperature Control Function For Wafer Stage 审中-公开
标题翻译：具有晶片级温度控制功能的真空处理装置和等离子体处理装置
公开(公告)号：US20120273132A1
公开(公告)日：2012-11-01
申请号：US13546071
申请日：2012-07-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A plasma processing apparatus includes a processing chamber, a wafer table, a refrigerant passage disposed inside the wafer table in which a refrigerant flows, a refrigeration cycle comprising the refrigerant passage in the wafer table as a first evaporator in which the refrigerant is evaporated as a result of a heat-exchange therein, a compressor, a condenser and an expansion valve, a second evaporator, and a controlling unit which adjusts a number of rotations of the compressor based upon a degree of dryness of the refrigerant at a position on the refrigeration cycle after passing through the first evaporation in a range in which dry-out does not occur in the first evaporator, and the dryness of the refrigerant being determined based upon an amount of a heat exchange during the evaporation of the refrigerant in the second evaporator.
摘要翻译：等离子体处理装置包括处理室，晶片台，布置在制冷剂流动的晶片台内部的制冷剂通道，制冷循环，其包括作为制冷剂蒸发的第一蒸发器的晶片台中的制冷剂通路，其中热交换的结果，压缩机，冷凝器和膨胀阀，第二蒸发器和控制单元，其基于制冷剂位置上的制冷剂的干燥程度来调节压缩机的转数在第一蒸发器中不发生干燥的范围内经过第一蒸发之后的循环，并且基于在第二蒸发器中的制冷剂的蒸发期间的热交换量来确定制冷剂的干燥度。

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