专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US07927429B2 Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium 有权
标题翻译：基板清洗方法，基板清洗装置和计算机可读记录介质
公开(公告)号：US07927429B2
公开(公告)日：2011-04-19
申请号：US10577314
申请日：2004-11-12
申请人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
发明人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译：在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜。

52. 发明申请

US20090253258A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

53. 发明申请

US20080210278A1 Substrate processing apparatus 有权
公开(公告)号：US20080210278A1
公开(公告)日：2008-09-04
申请号：US12149829
申请日：2008-05-08
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： B08B3/00
CPC分类号： H01L21/6708 , B08B3/02
摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

54. 发明授权

US07332055B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07332055B2
公开(公告)日：2008-02-19
申请号：US10209617
申请日：2002-08-01
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/6708 , B08B3/02
摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.
摘要翻译：提供了一种基板处理装置。该装置包括用于供应不同加工流体的多个流体供应器61,61,63。在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。

55. 发明授权

US07300598B2 Substrate processing method and apparatus 失效
标题翻译：基板加工方法及装置
公开(公告)号：US07300598B2
公开(公告)日：2007-11-27
申请号：US10812102
申请日：2004-03-30
申请人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
发明人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
IPC分类号： B44C1/22 , B08B3/00 , B08B3/08
CPC分类号： H01L21/6708 , B08B3/024 , H01L21/67051
摘要： The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.
摘要翻译：本发明涉及一种包括在基材上的化学液体处理和漂洗液处理的方法，更具体地涉及一种在实现均匀的工艺并防止颗粒产生的同时减少化学液体的消耗的技术。在具体实施例中，执行用于去除形成在硅晶片上的氧化硅膜的工艺。该方法包括三个随后执行的步骤，其中（1）稀释的氢氟酸（DHF），（2）DHF和去离子水（DIW），（3）DIW分别供应到旋转的晶片上。在亲水性氧化硅膜溶解之前立即进行从步骤（1）到步骤（2）的转变，以露出下面的疏水硅层。

56. 发明授权

US07275553B2 Liquid processing apparatus and liquid processing method 有权
标题翻译：液体处理装置和液体处理方法
公开(公告)号：US07275553B2
公开(公告)日：2007-10-02
申请号：US10409615
申请日：2003-04-09
申请人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
发明人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
IPC分类号： B08B3/00 , B08B3/04 , C23C16/00
CPC分类号： H01L21/67051
摘要： A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.
摘要翻译：一种清洁处理装置，包括用于保持晶片W的旋转卡盘，设置在与晶片W的背面对置的底板，其间设有规定的间隙，支撑底板的支撑部件和形成为延伸穿过板构件和支撑构件。可以通过开闭阀将化学液体，纯水和气体供给到喷嘴孔中，并且可以通过吸引装置吸引残留在喷嘴孔内的化学液体和纯水。在用纯水处理晶片W之后，通过使用吸附装置吸引残留在喷嘴孔内的纯水，然后将气体喷射到晶片W的背面。

57. 发明申请

US20070134431A1 Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：无电镀设备和化学镀方法
公开(公告)号：US20070134431A1
公开(公告)日：2007-06-14
申请号：US11606930
申请日：2006-12-01
申请人： Kenichi Hara , Takayuki Toshima , Mitsuaki Iwashita , Takehiko Orii
发明人： Kenichi Hara , Takayuki Toshima , Mitsuaki Iwashita , Takehiko Orii
IPC分类号： B05D5/12 , B05D1/18 , B05C5/00
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1628 , H01L21/6715 , H01L21/6723
摘要： An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.
摘要翻译：无电解电镀装置使用具有低还原能力的还原剂在具有电镀液的布线部分上进行无电镀。无电解电镀装置包括：支撑构件，其具有导电部分，其支撑基板; 电镀液供给机构，其将所述电镀液供给到由所述支撑部件支撑的所述基板的上表面; 金属构件，其设置在所述支撑构件上，以便能够与所述电镀液接触，并且在与所述电镀液接触时溶解到所述电镀液中，从而产生电子; 以及电子供给路径，其经由所述溶解金属构件产生的电子经由所述支撑构件的导电部向所述基板上的配线部供给。

58. 发明申请

US20070105380A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20070105380A1
公开(公告)日：2007-05-10
申请号：US11616138
申请日：2006-12-26
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： H01L21/302
CPC分类号： H01L21/67051 , C03C23/0075 , H01L21/67028 , H01L21/67178 , Y10S134/901 , Y10S134/902
摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.

59. 发明申请

US20070077768A1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US20070077768A1
公开(公告)日：2007-04-05
申请号：US11517272
申请日：2006-09-08
申请人： Yasushi Fujii , Takayuki Toshima , Takehiko Orii
发明人： Yasushi Fujii , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31058 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31111 , H01L21/31133 , H01L21/67051 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.
摘要翻译：衬底处理方法包括：在设置在衬底上的蚀刻靶膜上进行蚀刻处理以形成预定图案; 将蚀刻工序后剩余的物质变性为可溶于预定液体; 然后在其上形成有图案的蚀刻靶膜的表面上进行甲硅烷基化处理; 然后，供给预定液体以溶解并除去变性物质。

60. 发明申请

US20070074747A1 Substrate processing method, substrate processing apparatus and computer-readable memory medium 失效
标题翻译：基板处理方法，基板处理装置和计算机可读存储介质
公开(公告)号：US20070074747A1
公开(公告)日：2007-04-05
申请号：US10579423
申请日：2004-12-07
申请人： Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
发明人： Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
IPC分类号： B08B3/00
CPC分类号： G03F7/427 , H01L21/31138
摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.
摘要翻译：从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式