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    • 54. 发明授权
    • Solar cell module provided with means for forming a display pattern
    • 具有形成显示图案的装置的太阳能电池组件
    • US5782994A
    • 1998-07-21
    • US723826
    • 1996-09-30
    • Masahiro MoriKimitoshi FukaeYuji InoueTakashi Ohtsuka
    • Masahiro MoriKimitoshi FukaeYuji InoueTakashi Ohtsuka
    • H01L31/042H01L31/0216H01L31/048
    • H01L31/048G09F27/007H01L31/02167Y02B10/12Y02E10/50
    • A solar cell module comprising at least one solar cell element and at least a front surface covering material disposed to cover the light receiving face of said at least one solar cell element, said surface side covering material comprising a light transmissive resin and a light transmissive surface protective film situated on the outermost surface in contact with said light transmissive resin, characterized in that said front surface side covering material includes means for forming a desired display pattern on the light receiving face of said at least one solar cell element, said means comprising (a) a patterned surface region forming said desired display pattern and (b) another patterned surface region having a surface pattern which is different from that of said patterned surface region (a), and said patterned surface region (a) and said patterned surface region (b) being situated next to each other.
    • 一种太阳能电池模块,包括至少一个太阳能电池元件和至少一个设置成覆盖所述至少一个太阳能电池元件的光接收面的前表面覆盖材料,所述表面侧覆盖材料包括透光树脂和透光表面 保护膜位于与所述透光树脂接触的最外表面上,其特征在于,所述前表面侧覆盖材料包括用于在所述至少一个太阳能电池元件的光接收面上形成所需显示图案的装置,所述装置包括 a)形成所述所需显示图案的图案化表面区域和(b)具有不同于所述图案化表面区域(a)的表面图案的另一图案化表面区域,以及所述图案化表面区域(a)和所述图案化表面区域 (b)彼此相邻。
    • 55. 发明授权
    • Color picture processing method and color picture processing apparatus
    • 彩色图像处理方法和彩色图像处理装置
    • US5742520A
    • 1998-04-21
    • US508994
    • 1995-07-28
    • Keiji UchikawaShoji SuzukiMasanaga TokuyoMasahiro Mori
    • Keiji UchikawaShoji SuzukiMasanaga TokuyoMasahiro Mori
    • G06T1/00G06T5/00G06T7/00G06T9/00G06F19/00G01J3/46
    • G06T9/005
    • A color picture processing method and a color picture processing apparatus by which the amount of picture data can be reduced without degrading the picture quality in accordance with the sensations of human beings and further reduction in amount of data can be realized by data compression without degrading the picture quality and besides extraction of a body, a color change and reduction in number of colors can be performed simply. The color picture processing apparatus comprises a color picture data inputting section, a category discrimination section for discriminating, from color picture data, color information based on categorical perception of human beings, a picture data conversion section for converting the color picture data, a region extraction section for specifying and extracting a partial region of a picture, a color changing section for changing some or all of colors of the picture, a data compression section for compressing the color picture data after the conversion, and a picture displayable data conversion section for converting the color picture data after the conversion into picture displayable data to be inputted to a picture displaying section using a table which indicates a corresponding relationship between the color information and the picture displayable data.
    • 彩色图像处理方法和彩色图像处理装置可以通过数据压缩而不会降低图像数据的量,而不会降低图像质量,而不会降低根据人的感觉的图像质量 图像质量以及身体的抽出,可以简单地进行颜色变化和颜色数量的减少。 彩色图像处理装置包括彩色图像数据输入部分,用于从彩色图像数据识别基于人类的分类感知的颜色信息的类别识别部分,用于转换彩色图像数据的图像数据转换部分,区域提取 用于指定和提取图像的部分区域的部分,用于改变图像的一些或全部颜色的颜色变化部分,用于压缩转换后的彩色图像数据的数据压缩部分和用于转换的图像显示数据转换部分 使用表示颜色信息和图像可显示数据之间的对应关系的表,转换成要输入到图像显示部分的图像可显示数据之后的彩色图像数据。
    • 60. 发明授权
    • Method for pulling silicon single crystal
    • 拉硅单晶的方法
    • US08652254B2
    • 2014-02-18
    • US12450961
    • 2008-04-14
    • Satoshi SoetaMasahiro Mori
    • Satoshi SoetaMasahiro Mori
    • C30B15/22
    • C30B29/06C30B15/22
    • The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer.
    • 本发明是一种拉硅单晶的方法,该硅单晶是通过使晶种与熔体接触并通过拉起来生长硅单晶的切克劳斯基法,包括以下步骤:使晶种与熔体接触; 在晶种下形成颈缩部分; 并且通过增加直径在颈缩部分下形成硅单晶,其中在形成颈缩部分期间的拉伸速率为2mm / min以下,并且具有增加的直径的硅单晶是具有硼掺杂的硅单晶,其具有 肩部的电阻率为1.5mΩ·cm以下。 因此,在通过CZ法制造的具有低电阻率的硼掺杂硅单晶锭加工成晶片的情况下,可以提供拉丝硅单晶的方法,而不会在晶片表面产生诸如划痕之类的缺陷。