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51. 发明申请

US20100213503A1 BIODIRECTIONAL SWITCH 有权
标题翻译：生物开关
公开(公告)号：US20100213503A1
公开(公告)日：2010-08-26
申请号：US12681567
申请日：2009-07-10
申请人： Manabu Yanagihara , Kazushi Nakazawa , Tatsuo Morita , Yasuhiro Uemoto
发明人： Manabu Yanagihara , Kazushi Nakazawa , Tatsuo Morita , Yasuhiro Uemoto
IPC分类号： H01L29/747
CPC分类号： H01L27/088 , H01L23/481 , H01L23/4824 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
摘要翻译：双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。

52. 发明申请

US20090166677A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090166677A1
公开(公告)日：2009-07-02
申请号：US12329939
申请日：2008-12-08
申请人： Daisuke SHIBATA , Tatsuo Morita , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Daisuke SHIBATA , Tatsuo Morita , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L21/338 , H01L29/812
CPC分类号： H01L29/7783 , H01L21/26533 , H01L21/743 , H01L21/76251 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/7781 , H01L29/861 , H01L29/872
摘要： A semiconductor device includes: a semiconductor substrate; a diode having a cathode formed on a first surface side of the semiconductor substrate and an anode formed on a second surface side of the semiconductor substrate; and a transistor formed over the semiconductor substrate. The transistor includes a semiconductor layer laminate formed over the semiconductor substrate, a source electrode and a drain electrode that are formed spaced apart from each other over the semiconductor layer laminate, and a gate electrode formed between the source electrode and the drain electrode. The source electrode is electrically connected to the anode, and the drain electrode is electrically connected to the cathode.
摘要翻译：半导体器件包括：半导体衬底; 具有形成在半导体衬底的第一表面侧的阴极和形成在半导体衬底的第二表面侧上的阳极的二极管; 以及形成在半导体衬底上的晶体管。晶体管包括形成在半导体衬底上的半导体层叠层，在半导体层叠层上彼此隔开形成的源电极和漏极，以及形成在源电极和漏电极之间的栅电极。源电极与阳极电连接，漏电极与阴极电连接。

53. 发明授权

US08742467B2 Bidirectional switching device and bidirectional switching circuit using the same 有权
标题翻译：双向开关器件和双向开关电路使用相同
公开(公告)号：US08742467B2
公开(公告)日：2014-06-03
申请号：US13613724
申请日：2012-09-13
申请人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
发明人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
IPC分类号： H01L29/772 , H01L29/778
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/1066 , H01L29/2003
摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.
摘要翻译：双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

54. 发明授权

US08497553B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08497553B2
公开(公告)日：2013-07-30
申请号：US12905801
申请日：2010-10-15
申请人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L23/62 , H01L29/66 , H01L31/06 , H01L21/338 , H02H3/00 , H02H9/02
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译：半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和第二保护元件欧姆电极。第二元件区域的面积小于第一元件区域。

55. 发明授权

US08593068B2 Two-wire AC switch 有权
标题翻译：双线交流开关
公开(公告)号：US08593068B2
公开(公告)日：2013-11-26
申请号：US13032297
申请日：2011-02-22
申请人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B39/02
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

56. 发明授权

US08497581B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08497581B2
公开(公告)日：2013-07-30
申请号：US13220054
申请日：2011-08-29
申请人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
发明人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/495 , H01L23/34
CPC分类号： H01L24/11 , H01L23/295 , H01L23/3192 , H01L23/36 , H01L23/3677 , H01L23/4824 , H01L24/16 , H01L24/81 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1146 , H01L2224/1191 , H01L2224/13021 , H01L2224/131 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/29076 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
摘要翻译：半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。连接端子分别连接到连接焊盘。散热端与安装基板紧密接触。

57. 发明申请

US20120001200A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120001200A1
公开(公告)日：2012-01-05
申请号：US13220054
申请日：2011-08-29
申请人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
发明人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
IPC分类号： H01L29/161 , H01L23/48
CPC分类号： H01L24/11 , H01L23/295 , H01L23/3192 , H01L23/36 , H01L23/3677 , H01L23/4824 , H01L24/16 , H01L24/81 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1146 , H01L2224/1191 , H01L2224/13021 , H01L2224/131 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/29076 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
摘要翻译：半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。连接端子分别连接到连接焊盘。散热端与安装基板紧密接触。

58. 发明申请

US20100321363A1 PLASMA DISPLAY PANEL DRIVING DEVICE AND PLASMA DISPLAY 审中-公开
标题翻译：等离子显示面板驱动装置和等离子显示器
公开(公告)号：US20100321363A1
公开(公告)日：2010-12-23
申请号：US12518005
申请日：2008-06-19
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Manabu Inoue
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Manabu Inoue
IPC分类号： G09G3/28
CPC分类号： G09G3/294 , G09G3/2965
摘要： A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.
摘要翻译：等离子体显示面板驱动装置包括用于产生施加到等离子体显示面板的电极的驱动脉冲的电极驱动单元。电极驱动单元具有多个开关。多个开关中的至少一个是包括双栅极半导体器件的开关器件。双栅极半导体器件10具有形成在基板11上并由氮化物半导体或碳化硅半导体形成的半导体层叠体13，在半导体层叠体13上形成并隔开的源电极16和漏电极17 以及从源极电极16侧依次形成在源极电极16和漏极电极17之间的第一栅极电极18A和第二栅极电极18B。

59. 发明授权

US07595680B2 Bidirectional switch and method for driving the same 有权
标题翻译：双向开关及其驱动方法
公开(公告)号：US07595680B2
公开(公告)日：2009-09-29
申请号：US12020163
申请日：2008-01-25
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Manabu Inoue
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Manabu Inoue
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/41758 , H01L29/7787 , H03K17/302 , H03K17/567 , H03K17/6877 , H03K17/74 , H03K17/78 , H03K17/795 , H03K2217/0036
摘要： A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode.
摘要翻译：双向开关包括具有第一欧姆电极，第二欧姆电极和栅电极的场效应晶体管，以及通过向栅电极施加偏压来控制导通状态和截止状态的控制电路。当第二欧姆电极的电位高于第一欧姆电极的电位时，控制电路施加来自第一欧姆电极的偏置电压作为参考，并且当第二欧姆电极的电位为电位时施加来自第二欧姆电极的偏置电压作为参考的第二电极的电位低于第一欧姆电极的电位。

60. 发明申请

US20110204807A1 TWO-WIRE AC SWITCH 有权
标题翻译：双线交流开关
公开(公告)号：US20110204807A1
公开(公告)日：2011-08-25
申请号：US13032297
申请日：2011-02-22
申请人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B41/16 , H03K17/56
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

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