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51. 发明申请

WO2019067080A1 ATOMIC LAYER ETCHING OF METAL OXIDE 审中-公开
公开(公告)号：WO2019067080A1
公开(公告)日：2019-04-04
申请号：PCT/US2018/044439
申请日：2018-07-30
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , DRAEGER, Nerissa
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311 , H01L21/67
摘要： A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.

52. 发明申请

WO2013148529A1 METHODS AND APPARATUSES FOR EFFECTIVELY REDUCING GAS RESIDENCE TIME IN A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：在等离子体加工室中有效降低气体停留时间的方法和装置
公开(公告)号：WO2013148529A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/033608
申请日：2013-03-22
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972
摘要： Methods and apparatuses for controlling plasma generation in a plasma processing chamber to reduce an effective residence time of by-product gases or to control in real time the concentration of certain polymer pre-cursors or reaction by-products in the plasma processing chamber are disclosed. The gas residence time is "effectively" reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds can be provided to control when the plasma reaction is permitted to proceed at the full rate and when the plasma reaction is permitted to proceed at the reduced rate. By reducing the rate of plasma by-product generation at least for a portion of the process time, the by-product gas residence time may be effectively reduced to improve process results.
摘要翻译：公开了用于控制等离子体处理室中的等离子体产生以减少副产物气体的有效停留时间或实时控制等离子体处理室中某些聚合物前体或反应副产物的浓度的方法和装置。通过在处理时间的至少一部分减少等离子体反应，“有效地”减少气体停留时间。可以提供阈值以控制何时允许血浆反应以全速进行，并且允许血浆反应以降低的速率进行。通过至少在一部分处理时间内降低等离子体副产物产生速率，可以有效地减少副产物气体停留时间以改善工艺结果。

53. 发明申请

WO2003068442A1 A PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体处理装置和方法
公开(公告)号：WO2003068442A1
公开(公告)日：2003-08-21
申请号：PCT/US2003/004407
申请日：2003-02-14
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , TRUSSEL, Dave , KENNEDY, Bill , LOEWENHARDT, Peter
IPC分类号： B23K10/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode (152), a power generator (154), a second electrode (156), at least one confinement ring (166), and a ground extension (160) surrounding the first electrode (152). The first electrode (152) is configured to receive a workpiece and has an associated first electrode area. The power generator (154) is operatively coupled to the first electrode (152), and the power generator (154) is configured to generate RF power that is communicated to the first electrode (152). The second electrode (156) is disposed at a distance from the first electrode (152). The second electrode (156) is configured to provide a complete electrical circuit for RF power communicated from the first electrode (152). Additionally, the second electrode (156) has a second electrode area that is greater than the first electrode area. At least one confinement ring (166) is configured to assist confine the plasma.
摘要翻译：本发明包括用于将等离子体限制在等离子体处理室内的系统和方法。等离子体处理装置包括第一电极（152），发电机（154），第二电极（156），至少一个限制环（166）和围绕第一电极（152）的接地延伸部（160）。第一电极（152）构造成接收工件并且具有相关联的第一电极区域。功率发生器（154）可操作地耦合到第一电极（152），并且发电机（154）被配置为产生与第一电极（152）连通的RF功率。第二电极（156）设置在离第一电极（152）一定距离处。第二电极（156）被配置为提供从第一电极（152）传送的RF功率的完整电路。此外，第二电极（156）具有大于第一电极区域的第二电极区域。至少一个限制环（166）构造成辅助限制等离子体。

54. 发明公开

EP2417626A2 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：等离子刻蚀与电容式多频率和功率
公开(公告)号：EP2417626A2
公开(公告)日：2012-02-15
申请号：EP10762275.5
申请日：2010-04-06
申请人： LAM Research Corporation
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , KOSHIISHI, Akira , FISCHER, Andreas
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

55. 发明公开

EP2380412A2 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 有权
标题翻译：方法和设备的双重保障特高压在玻璃可调节的等离子体室
公开(公告)号：EP2380412A2
公开(公告)日：2011-10-26
申请号：EP09837887.0
申请日：2009-12-16
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , HUDSON, Eric
IPC分类号： H05H1/34
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要翻译：提供了一种具有用于处理衬底配置的等离子体处理室的等离子体处理系统。所述等离子体处理系统包括至少在上部电极和用于处理基片的下部电极。基板被等离子体处理，其中，所述上部电极和所述基板形成第一间隙期间设置在所述下电极。因此，该等离子体处理系统包括在上电极外周延伸部（UE-PE）。的UE-PE被机械地耦合到上部电极，其中UE-PE被配置为不共面与所述上部电极的外周。所述等离子体处理系统包括另外coverring。盖环被配置为同心围绕所述下电极，其中，UE-PE和盖环形成第二间隙。

56. 发明授权

EP1620876B1 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 失效
标题翻译：电容性RF脉冲耦合窄间隙REACTOR
公开(公告)号：EP1620876B1
公开(公告)日：2010-06-09
申请号：EP04751199.3
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165

57. 发明公开

EP1989007A2 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 审中-公开
标题翻译：集成电容性和电感性电源的一种等离子蚀刻
公开(公告)号：EP1989007A2
公开(公告)日：2008-11-12
申请号：EP07751017.0
申请日：2007-02-16
申请人： Lam Research Corporation
发明人： DHINDSA, Rajinder , SRINIVASAN, Mukund , TAKESHITA, Kenji , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： B08B6/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

58. 发明公开

EP1512164A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE 有权
标题翻译：多片电极的等离子体反应器的半导体处理和方法用于替换多电极的一部分
公开(公告)号：EP1512164A1
公开(公告)日：2005-03-09
申请号：EP03729095.4
申请日：2003-05-23
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

59. 发明公开

EP1323180A2 SYSTEM, APPARATUS, AND METHOD FOR PROCESSING WAFER USING SINGLE FREQUENCY RF POWER IN PLASMA PROCESSING CHAMBER 有权
标题翻译：系统，装置及晶圆处理方法使用MONO频率RF输出功率是在等离子体处理室
公开(公告)号：EP1323180A2
公开(公告)日：2003-07-02
申请号：EP01981834.3
申请日：2001-10-05
申请人： LAM RESEARCH CORPORATION
发明人： KUTHI, Andras , FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32082
摘要： The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer. The match network is coupled between the modulated RF power generator and the plasma processing chamber to receive and transmit the modulated RF power from the modulated RF power generator to the plasma processing chamber. The match network is further configured to match an impedance of the modulated RF power generator to the internal impedance of the plasma processing chamber.

60. 发明公开

EP3586357A1 CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING 审中-实审
公开(公告)号：EP3586357A1
公开(公告)日：2020-01-01
申请号：EP18758014.7
申请日：2018-02-26
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , LILL, Thorsten , JANEK, Richard
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213

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