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    • 51. 发明申请
    • Thin film diode panel and manufacturing method of the same
    • 薄膜二极管面板及其制造方法相同
    • US20070040956A1
    • 2007-02-22
    • US10578028
    • 2004-10-28
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimJin-Sung Hong
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimJin-Sung Hong
    • G02F1/136
    • G02F1/1365G02F1/13624G02F1/136286G02F2001/13629
    • A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.
    • 一种薄膜二极管阵列面板,包括:绝缘衬底(110); 第一和第二冗余栅极线(141,142),由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极(143,144),由不透明导体制成,形成在所述绝缘基板上,并设置在所述第一和第二冗余栅极线(141,142)之间; 形成在第一和第二浮置电极(143,144)上的绝缘层(151,152); 第一栅极线(121),形成在所述第一冗余栅极线(141)上并且包括与所述第一浮置电极(143)重叠的第一输入电极(123),其中所述绝缘层(151)插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线(142)上并包括与第二浮置电极(144)重叠的第二输入电极(124)的第二栅极线(122),其中绝缘层(152)介于第二输入电极 )和第二浮置电极(144); 和包括与所述第一浮动电极(143)重叠的第一接触电极(191)的像素电极(190),其中所述绝缘层(151)插入在所述第一接触电极(191)和所述第一浮动电极(143)之间, 与第二接触电极(192)和第二浮动电极(144)之间插入绝缘层(152)的第二浮动电极(144)重叠的第二接触电极(192)和主体。
    • 56. 发明申请
    • DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE
    • 具有该显示基板的显示基板和制造显示基板的方法
    • US20080185589A1
    • 2008-08-07
    • US12027102
    • 2008-02-06
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • H01L29/04H01L21/02G02F1/136
    • G02F1/136213G02F2001/136222
    • A display substrate includes a thin-film transistor (TFT) layer, a color filter layer and a pixel electrode formed on a substrate. The TFT layer includes a gate line, a data line electrically insulated from the gate line and extending in a direction different from the gate line, a TFT electrically connected to the gate line and the data line, and a storage electrode formed from the same layer as the gate line in each pixel. The color filter layer includes a storage hole extending to a portion of the TFT layer corresponding to the storage electrode. The storage hole has a horizontal cross-sectional area greater than the storage electrode, wherein the horizontal cross-sectional area is measured in a plane parallel to the substrate. The pixel electrode is formed on the color filter layer and in the storage hole to form a storage capacitor with the storage electrode.
    • 显示基板包括薄膜晶体管(TFT)层,滤色器层和形成在基板上的像素电极。 TFT层包括栅极线,与栅极线电绝缘并沿与栅极线不同的方向延伸的数据线,与栅极线和数据线电连接的TFT,以及由同一层形成的存储电极 作为每个像素中的栅极线。 滤色器层包括延伸到对应于存储电极的TFT层的一部分的存储孔。 存储孔具有大于存储电极的水平横截面积,其中在平行于衬底的平面中测量水平横截面面积。 像素电极形成在滤色器层和存储孔中,以与存储电极形成存储电容器。
    • 57. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US07230667B2
    • 2007-06-12
    • US10948701
    • 2004-09-23
    • Kyoung-Ju ShinChong-Chul Chai
    • Kyoung-Ju ShinChong-Chul Chai
    • G02F1/1343
    • G02F1/133514G02F2201/52G09G2300/0452
    • A liquid crystal display comprising an insulating substrate; a plurality of gate lines formed on the insulating substrate; a plurality of data lines formed on the insulating substrate and crossing the gate lines; a plurality of switching elements connected to the gate lines and data lines; and a plurality of pixel electrodes connected to the switching element, and wherein dots each having a red, green, blue, and white pixels are successively arranged, the ratios the liquid crystal capacitance, the storage capacitance, the parasitic capacitance, and ratio of channel width and length (W/L) of the switching elements between the red and green pixels and the blue and white pixels are same is provided.
    • 一种液晶显示器,包括绝缘基板; 形成在所述绝缘基板上的多个栅极线; 形成在所述绝缘基板上并与所述栅极线交叉的多条数据线; 连接到栅极线和数据线的多个开关元件; 以及连接到开关元件的多个像素电极,并且其中连续布置具有红色,绿色,蓝色和白色像素的点,液晶电容,存储电容,寄生电容和通道的比率 红色和绿色像素与蓝色和白色像素之间的开关元件的宽度和长度(W / L)相同。
    • 58. 发明申请
    • Thin film diode panel for trans-reflective liquid crystal display
    • 薄膜二极管面板用于反射式液晶显示
    • US20070080344A1
    • 2007-04-12
    • US10578029
    • 2004-10-29
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • H01L29/08H01L51/00
    • G02F1/133555G02F1/13624G02F1/1365
    • A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.
    • 薄膜二极管面板具有绝缘基板,形成在绝缘基板上的第一和第二栅极线(121,122),形成在绝缘基板上的反射电极(190a)和透射电极(190b),第一 MIM绝缘二极管(D 1)形成在绝缘基板上并与第一栅极线(121)和反射电极(190a)连接。 第二MIM二极管(D 2)形成在绝缘基板上并连接到第二栅极线(122)和反射电极(190a)。 第三MIM二极管(D 1)形成在绝缘基板上并连接第一栅极线(121)和透射电极(190b)。 第四MIM二极管(D21)形成在绝缘基板上并连接第二栅极线(122)和透射电极(190b)。 第一至第四MIM二极管中的至少一个具有与其他MIM电流电压(I-V)特性相当大的不同。