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51. 发明授权

US07491965B2 Heat-shielded low power PCM-based reprogrammable eFUSE device 失效
标题翻译：基于热屏蔽的低功耗基于PCM的可编程eFUSE设备
公开(公告)号：US07491965B2
公开(公告)日：2009-02-17
申请号：US12127994
申请日：2008-05-28
申请人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
发明人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
摘要翻译：用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端元件与第一和第二加热器电极电接触。相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

52. 发明申请

US20080210925A1 THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS 有权
标题翻译：用于控制集成电路中静态功耗的三端子开关
公开(公告)号：US20080210925A1
公开(公告)日：2008-09-04
申请号：US12122969
申请日：2008-05-19
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit configured for controlling static power consumption in integrated circuits includes a plurality of three-terminal, phase change material (PCM) switching devices connected between a voltage supply terminal and a corresponding sub-block of integrated circuit logic. Each of the PCM switching devices further includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：配置成用于控制集成电路中的静态功耗的开关电路包括连接在电压源端子和集成电路逻辑的对应子块之间的多个三端子相变材料（PCM）开关器件。每个PCM开关装置还包括设置在第一端子和第二端子之间接触的PCM，在第二端子和第三端子之间接触地设置的加热装置，加热装置位于PCM附近，并且被配置为将 PCM的可变形部分的电导率在较低电阻结晶状态和较高电阻无定形状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

53. 发明授权

US07411818B1 Programmable fuse/non-volatile memory structures using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的可编程保险丝/非易失性存储器结构
公开(公告)号：US07411818B1
公开(公告)日：2008-08-12
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

54. 发明申请

US20080048169A1 HEAT-SHIELDED LOW POWER PCM-BASED REPROGRAMMABLE EFUSE DEVICE 有权
标题翻译：基于热屏蔽的低功耗PCM可编程的EFUSE设备
公开(公告)号：US20080048169A1
公开(公告)日：2008-02-28
申请号：US11467294
申请日：2006-08-25
申请人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
发明人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
IPC分类号： H01L47/00 , H01L21/76
CPC分类号： H01L45/1233 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
摘要翻译：用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端元件与第一和第二加热器电极电接触。相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

55. 发明申请

US20060249724A1 Method and structure for Peltier-controlled phase change memory 审中-公开
标题翻译：珀耳帖控制相变记忆的方法和结构
公开(公告)号：US20060249724A1
公开(公告)日：2006-11-09
申请号：US11123086
申请日：2005-05-06
申请人： Lia Krusin-Elbaum , Dennis Newns
发明人： Lia Krusin-Elbaum , Dennis Newns
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1206 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A memory cell includes a phase change material (PCM) element that stores an information bit. A heating element external to the PCM element changes the information bit. A cooling element increases the speed of the information bit change.
摘要翻译：存储单元包括存储信息位的相变材料（PCM）元件。 PCM元件外部的加热元件会更改信息位。冷却元件增加了信息位变化的速度。

56. 发明授权

US5801444A Multilevel electronic structures containing copper layer and copper-semiconductor layers 失效
标题翻译：含铜层和铜半导体层的多层电子结构
公开(公告)号：US5801444A
公开(公告)日：1998-09-01
申请号：US756829
申请日：1996-11-20
申请人： Mohamed Osama Aboelfotoh , Lia Krusin-Elbaum , Yuan-Chen Sun
发明人： Mohamed Osama Aboelfotoh , Lia Krusin-Elbaum , Yuan-Chen Sun
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/532 , H01L29/45 , H01L29/47 , H01L29/49 , H01L23/48
CPC分类号： H01L21/76877 , H01L21/2807 , H01L21/28512 , H01L21/28518 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76847 , H01L21/7685 , H01L21/76855 , H01L23/485 , H01L23/53228 , H01L23/53238 , H01L29/456 , H01L29/47 , H01L29/4966 , H01L29/4975 , H01L2924/0002
摘要： A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed by heating Cu deposited on a Si or Ge substrate up to about 200.degree. C. for about 30 minutes. The layer demonstrates superior (near ideal) current/voltage characteristics and can be used as a high temperature (600-800.degree. C.) stable Ohmic/Schottky contact to Si or as a Cu diffusion barrier. Additional embodiments involve a Cu layer on a Ge layer on Si substrate, a Cu layer on a Si.sub.x Ge.sub.1-x layer on a substrate, and the use of an intermediate layer of a refractory metal such as W.
摘要翻译：在Si或Ge的单晶半导体衬底的表面上的低温退火的Cu硅化物或锗化物层用于集成电路的互连金属化。 Cu硅化物或锗化锗层优选通过将沉积在Si或Ge衬底上的Cu加热至约200℃形成约30分钟。该层表现出优异的（接近理想的）电流/电压特性，并且可以用作与Si或作为Cu扩散阻挡层的高温（600-800℃）稳定的欧姆/肖特基接触。另外的实施方案涉及Si衬底上Ge层上的Cu层，衬底上六Ge1-x层上的Cu层，以及使用难熔金属如W的中间层。

57. 发明授权

US5330592A Process of deposition and solid state reaction for making alloyed highly conductive copper germanide 失效
标题翻译：用于制造合金化高导电性锗酸锗的沉积和固态反应过程
公开(公告)号：US5330592A
公开(公告)日：1994-07-19
申请号：US148593
申请日：1993-11-08
申请人： Mohamed O. Aboelfotoh , Michael J. Brady , Lia Krusin-Elbaum
发明人： Mohamed O. Aboelfotoh , Michael J. Brady , Lia Krusin-Elbaum
IPC分类号： C22C1/00 , C22C9/00 , C23C14/06
CPC分类号： C22C9/00 , H01L23/53233 , H01L2924/0002
摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
摘要翻译：本发明涉及在室温下表现出非常低的电阻率的新型化合物。更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率，但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。另外，本发明涉及一种制备上述前述新颖化合物的方法。

58. 发明授权

US08987084B2 High density low power nanowire phase change material memory device 有权
标题翻译：高密度低功率纳米线相变材料存储器件
公开(公告)号：US08987084B2
公开(公告)日：2015-03-24
申请号：US13471711
申请日：2012-05-15
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
IPC分类号： H01L27/11 , H01L45/00 , B82Y10/00 , G11C13/00 , H01L27/24 , H01L29/06 , H01L29/775
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译：存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结，邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。

59. 发明授权

US08586957B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US08586957B2
公开(公告)日：2013-11-19
申请号：US12551631
申请日：2009-09-01
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A three-terminal switching device for use in integrated circuit devices, including a phase change material (PCM) disposed in contact between a first terminal and a second terminal; a heating device disposed in direct electrical contact between said second terminal and a third terminal, said heating device positioned proximate said PCM, and configured to switch the conductivity of a transformable portion of said PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate said heater from said PCM material, and said heater from said first terminal.
摘要翻译：一种用于集成电路装置的三端开关装置，包括设置在第一端子和第二端子之间的相变材料（PCM）; 加热装置，其设置在所述第二端子和第三端子之间的直接电接触中，所述加热装置位于所述PCM附近，并且被配置为将所述PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态 ; 以及绝缘层，其被配置为将所述加热器与所述PCM材料电隔离，并且所述加热器从所述第一端子电隔离。

60. 发明授权

US08143609B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US08143609B2
公开(公告)日：2012-03-27
申请号：US12551643
申请日：2009-09-01
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

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