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51. 发明授权

US07199444B2 Memory device, programmable resistance memory cell and memory array 有权
标题翻译：存储器件，可编程电阻存储单元和存储器阵列
公开(公告)号：US07199444B2
公开(公告)日：2007-04-03
申请号：US11219742
申请日：2005-09-07
申请人： John T. Moore , Terry L. Gilton
发明人： John T. Moore , Terry L. Gilton
IPC分类号： H01L29/12
CPC分类号： H01L45/04 , H01L27/101 , H01L28/24 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1658 , H01L45/1675
摘要： A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal outwardly into the chalcogenide material. A method of metal doping a chalcogenide material includes surrounding exposed outer surfaces of a projecting metal mass with chalcogenide material. Irradiating is conducted through the chalcogenide material to the projecting metal mass effective to break a chalcogenide bond of the chalcogenide material at an interface of the projecting metal mass outer surfaces and diffuse at least some of the projecting metal mass outwardly into the chalcogenide material. In certain aspects, the above implementations are incorporated in methods of forming non-volatile resistance variable devices. In one implementation, a non-volatile resistance variable device in a highest resistance state for a given ambient temperature and pressure includes a resistance variable chalcogenide material having metal ions diffused therein. Opposing first and second electrodes are received operatively proximate the resistance variable chalcogenide material. At least one of the electrodes has a conductive projection extending into the resistance variable chalcogenide material.
摘要翻译：金属掺杂硫族化物材料的方法包括在衬底上形成金属。在金属上形成硫族化物材料。通过硫属化物材料对金属进行辐射，有效地在金属和硫族化物材料的界面处破坏硫族化物材料的硫族化物键，并将至少一些金属向外扩散到硫族化物材料中。金属掺杂硫族化物材料的方法包括用硫族化物材料包围突出的金属块的暴露的外表面。通过硫族化物材料将辐射照射到突出金属质量块上，有效地在突出的金属质量外表面的界面处破坏硫族化物材料的硫族化物键，并将至少一些突出的金属块向外扩散到硫族化物材料中。在某些方面，上述实施方式被并入形成非易失性电阻可变器件的方法中。在一个实施方案中，对于给定的环境温度和压力，最高电阻状态的非易失性电阻可变器件包括在其中扩散有金属离子的电阻变化硫属化物材料。反向的第一和第二电极在电阻可变硫属化物材料上可操作地接收。至少一个电极具有延伸到电阻可变硫族化物材料中的导电突起。

52. 发明授权

US07094700B2 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 有权
标题翻译：等离子体蚀刻方法和形成存储器件的方法，包括可靠地接近导电电极接收的含硫族化物的层
公开(公告)号：US07094700B2
公开(公告)日：2006-08-22
申请号：US10932282
申请日：2004-09-02
申请人： Li Li , Terry L. Gilton , Kei-Yu Ko , John T. Moore , Karen Signorini
发明人： Li Li , Terry L. Gilton , Kei-Yu Ko , John T. Moore , Karen Signorini
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L45/143 , H01L45/085 , H01L45/1233 , H01L45/1675
摘要： In one implementation, a plasma etching method comprises forming a GexSey chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the GexSey chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the GexSey comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the GexSey chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the GexSey chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
摘要翻译：在一个实施方案中，等离子体蚀刻方法包括在衬底上形成包含Ge x Ga 2 O 3的硫属元素化层。包含有机掩模材料的掩模形成在包含硫族元素的层上。掩模包括侧壁。至少在等离子体蚀刻包含Ge层之前，掩模的侧壁暴露于含氟材料。在所述曝光之后，使用掩模和含氢蚀刻气体等离子体蚀刻含有硫族化合物的层。等离子体蚀刻形成了与掩模的侧壁的最外侧横向对齐的包含Ge的硫属化合物层的基本上垂直的侧壁。

53. 发明授权

US07050319B2 Memory architecture and method of manufacture and operation thereof 有权
公开(公告)号：US07050319B2
公开(公告)日：2006-05-23
申请号：US10725557
申请日：2003-12-03
申请人： John T. Moore , Terry L. Gilton
发明人： John T. Moore , Terry L. Gilton
IPC分类号： G11C5/06
CPC分类号： G11C13/003 , G11C5/063 , G11C7/18 , G11C11/4097 , G11C13/0011 , G11C13/004 , G11C2213/75 , G11C2213/76 , G11C2213/79 , H01L27/0203 , H01L27/105 , H01L27/1052
摘要： An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable conductive access memory elements. The architecture in one exemplary embodiment has a pair of semi-volatile or non-volatile memory elements which selectively share a bit line through respective first electrodes and access transistors controlled by respective word lines. The memory elements each have a respective second electrode coupled thereto which in cooperation with the bit line access transistors and first electrode, serves to apply read, write and erase signals to the memory element.

54. 发明授权

US06818481B2 Method to manufacture a buried electrode PCRAM cell 失效
标题翻译：掩埋电极PCRAM电池的制造方法
公开(公告)号：US06818481B2
公开(公告)日：2004-11-16
申请号：US09803176
申请日：2001-03-07
申请人： John T. Moore , Terry L. Gilton
发明人： John T. Moore , Terry L. Gilton
IPC分类号： H07L2182
CPC分类号： H01L45/1683 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1641
摘要： An exemplary embodiment of the present invention includes a method for forming a programmable cell by forming an opening in a dielectric material to expose a portion of an underlying first conductive electrode, forming a recessed chalcogenide-metal ion material in said opening and forming a second conductive electrode overlying the dielectric material and the chalcogenide-metal ion material. A method for forming the recessed chalcogenide-metal ion material comprises forming a metal material being recessed approximately 10-90%, in the opening in the dielectric material, forming a glass material on the metal material within the opening and diffusing metal ions from the metal material into the glass material by using ultraviolet light or ultraviolet light in combination with a heat treatment, to cause a resultant metal ion concentration in the glass material.
摘要翻译：本发明的示例性实施例包括通过在电介质材料中形成开口以暴露下面的第一导电电极的一部分来形成可编程电池的方法，在所述开口中形成凹陷的硫族化物金属离子材料并形成第二导电电极覆盖电介质材料和硫族化物金属离子材料。一种用于形成凹陷的硫族化物金属离子材料的方法包括在电介质材料的开口中形成凹陷约10-90％的金属材料，在开口内的金属材料上形成玻璃材料，并从金属中扩散金属离子通过使用紫外线或紫外线与热处理相结合的方式将玻璃材料转化成玻璃材料，从而在玻璃材料中产生金属离子浓度。

55. 发明授权

US08096121B2 Micro-machine and a method of powering a micro-machine 失效
标题翻译：微机和微机供电方法
公开(公告)号：US08096121B2
公开(公告)日：2012-01-17
申请号：US11452185
申请日：2006-06-13
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： F03C1/00
CPC分类号： F01K27/005
摘要： A rotatable micro-machine is comprised of a solvent reservoir, a porous evaporation region and a channel connecting the solvent reservoir to the evaporation region. The evaporation region may be constructed of capillary paths that enable a capillary action which pulls solvent from the channel so as to enable a flow of solvent from the reservoir to the evaporation region through the channel. A rotatable member has portions in communication with the channel so as to be rotated by the flow. In one embodiment, the rotatable member may be a component of a micro-turbine generator. A system may be comprised of the rotatable micro-machine in combination with at least one electrical circuit. The porous region may be positioned to receive heat from the circuit. That may be accomplished in several ways; the evaporation region may be formed adjacent to the circuit, the evaporation region may be fabricated on the side of a die that is opposite of the side of the die carrying the circuit, or the reservoir, micro-turbine generator, evaporation region, and channel may be fabricated on one die and the circuit fabricated on another die. The two dies may then be connected to one another by a heat transferring adhesive with the evaporation region proximate to the circuit. Methods of operating a rotatable micro-machine are also disclosed. Because of the rules governing abstracts, this abstract should not be used in construing the claims.
摘要翻译：可旋转的微型机器包括溶剂容器，多孔蒸发区域和将溶剂容器连接到蒸发区域的通道。蒸发区域可以由毛细管路径构成，其能够进行毛细管作用，其从通道中拉出溶剂，以便能够使溶剂从储存器流过通过通道的蒸发区域。可旋转构件具有与通道连通的部分，以便由流动旋转。在一个实施例中，可旋转构件可以是微型涡轮发电机的部件。系统可以包括与至少一个电路组合的可旋转微型机器。多孔区域可以被定位成从电路接收热量。这可以通过几种方式实现; 蒸发区域可以与电路相邻地形成，蒸发区域可以制造在与承载电路的模具的侧面相反的模具的侧面，或者储存器，微型涡轮发电机，蒸发区域和通道可以在一个管芯上制造，并且在另一管芯上制造电路。然后可以通过具有靠近电路的蒸发区域的传热粘合剂将两个模具彼此连接。还公开了操作可旋转微型机器的方法。由于管理摘要的规则，本摘要不应用于解释索赔。

56. 发明授权

US07944768B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07944768B2
公开(公告)日：2011-05-17
申请号：US12824931
申请日：2010-06-28
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C11/00 , G06F13/00 , G06F13/28
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

57. 发明授权

US07944025B2 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US07944025B2
公开(公告)日：2011-05-17
申请号：US11452830
申请日：2006-06-13
申请人： Trung Tri Doan , Terry L. Gilton
发明人： Trung Tri Doan , Terry L. Gilton
IPC分类号： H01L29/02
CPC分类号： G03F7/322 , G03F7/36
摘要： The invention includes a process whereby a solvent is utilized to remove soluble portions of a resist, and subsequently the solvent can be removed with a gas-fortified liquid. In particular aspects, the gas-fortified liquid emits bubbles during the removal of the solvent. Additionally, the gas-fortified liquid can be utilized to remove residual resist scum, and in such aspects the gas-fortified liquid can emit bubbles during the scum removal.
摘要翻译：本发明包括使用溶剂去除抗蚀剂的可溶部分的方法，随后用气体强化液体除去溶剂。在特定方面，气体强化液体在除去溶剂期间会发出气泡。此外，气体强化液体可用于去除残留的抗蚀剂浮渣，并且在这些方面，气体强化液体可以在浮渣期间发出气泡。

58. 发明授权

US07768861B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07768861B2
公开(公告)日：2010-08-03
申请号：US12488817
申请日：2009-06-22
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C11/00 , G06F12/00 , G06F13/00
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

59. 发明授权

US07564731B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07564731B2
公开(公告)日：2009-07-21
申请号：US11806216
申请日：2007-05-30
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C27/00 , G11C11/00
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

60. 发明授权

US07202520B2 Multiple data state memory cell 有权
标题翻译：多个数据状态存储单元
公开(公告)号：US07202520B2
公开(公告)日：2007-04-10
申请号：US11080442
申请日：2005-03-16
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： H01L29/76 , H01L21/20
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C17/14 , H01L45/085 , H01L45/142 , H01L45/143 , H01L45/144
摘要： A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a first layer of a metal-doped chalcogenide material disposed between the first and second electrode layers. The first layer providing a medium in which a conductive growth can be formed to electrically couple together the first and second electrode layers. The memory cell further includes a third electrode layer formed from a third conductive material, and a second layer of a metal-doped chalcogenide material disposed between the second and third electrode layers, the second layer providing a medium in which a conductive growth can be formed to electrically couple together the second and third electrode layers.
摘要翻译：一种可编程多数据状态存储单元，包括由第一导电材料形成的第一电极层，由第二导电材料形成的第二电极层，以及设置在第一和第二电极层之间的金属掺杂的硫族化物材料的第一层。第一层提供其中可以形成导电生长以将第一和第二电极层电耦合在一起的介质。存储单元还包括由第三导电材料形成的第三电极层和设置在第二和第三电极层之间的金属掺杂硫族化物材料的第二层，第二层提供可形成导电生长的介质以将第二和第三电极层电耦合在一起。

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