会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 56. 发明授权
    • Organic optical device and protective component of organic optical device
    • 有机光学器件和有机光学器件的保护元件
    • US09331306B2
    • 2016-05-03
    • US13302213
    • 2011-11-22
    • Shunpei YamazakiHisao IkedaKengo Akimoto
    • Shunpei YamazakiHisao IkedaKengo Akimoto
    • H01L51/52H01L27/32
    • H01L51/5253H01L27/3258H01L51/5275
    • An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.
    • 提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。 有机光学器件包括支撑体,设置在支撑体上的功能层,以及包含设置在功能层上的有机化合物的发光体。 功能层包括含有镓或铝,锌和氧的绝缘膜。 支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。 通过使用含有镓或铝,锌和氧的绝缘膜作为保护膜,可以抑制水分或杂质进入有机化合物或金属材料。
    • 57. 发明授权
    • Display device
    • 显示设备
    • US09305481B2
    • 2016-04-05
    • US12887179
    • 2010-09-21
    • Jun KoyamaShunpei Yamazaki
    • Jun KoyamaShunpei Yamazaki
    • G09G5/00G09G3/20G02F1/1345
    • H01L27/1225G02F1/1345G02F1/1368G09G3/20G09G2310/0275H01L27/124H01L27/3262H01L27/3276H01L29/7869
    • A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.
    • 显示装置包括驱动电路,该驱动电路包括逻辑电路,该逻辑电路包括作为耗尽型晶体管的第一晶体管和作为增强型晶体管的第二晶体管; 电连接到驱动电路的信号线; 包括像素的像素,所述像素的显示状态通过输入来自所述驱动电路的通过所述信号线的图像数据的信号进行控制; 施加参考电压的参考电压线; 以及第三晶体管,其是耗尽型晶体管,并控制信号线与参考电压线之间的电连接。 第一至第三晶体管各自包括包括沟道形成区的氧化物半导体层。
    • 60. 发明授权
    • Semiconductor device including oxide semiconductor film and metal oxide film
    • 包括氧化物半导体膜和金属氧化物膜的半导体器件
    • US09196739B2
    • 2015-11-24
    • US13074635
    • 2011-03-29
    • Shunpei Yamazaki
    • Shunpei Yamazaki
    • H01L29/786
    • H01L29/7869H01L29/78606
    • A transistor is provided in which the top surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing the impurities.
    • 提供了一种晶体管,其中氧化物半导体膜的顶表面部分设置有含有与氧化物半导体膜类似的组成的金属氧化物膜,以及含有与金属氧化物膜和氧化物不同的成分的绝缘膜 半导体膜形成为与与氧化物半导体膜接触的表面相反的金属氧化物膜的表面接触。 此外,用于晶体管的有源层的氧化物半导体膜是通过热处理而被高度纯化成电i型(本征的)的氧化物半导体膜,其中从其中去除诸如氢,水分,羟基和氢化物的杂质 供给作为氧化物半导体的主要成分材料之一的氧化物半导体和氧,并且在除去杂质的工序中还可以进行还原。