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51. 发明授权

US5023147A Ceramics-metal jointed body 失效
标题翻译：陶瓷金属接头体
公开(公告)号：US5023147A
公开(公告)日：1991-06-11
申请号：US387430
申请日：1989-07-31
申请人： Hirohiko Nakata , Takao Nishioka , Nobuya Oooka , Kenya Motoyoshi
发明人： Hirohiko Nakata , Takao Nishioka , Nobuya Oooka , Kenya Motoyoshi
IPC分类号： C04B37/02
CPC分类号： C04B37/026 , C04B37/023 , C04B2237/122 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/343 , C04B2237/348 , C04B2237/365 , C04B2237/368 , C04B2237/406 , C04B2237/708 , C04B2237/72 , C04B2237/76 , Y10T428/12576 , Y10T428/12611 , Y10T428/12806 , Y10T428/1284 , Y10T428/12896
摘要： A ceramics-metal joined body which excels in high temperature characteristics and joint strength is formed by metallizing the surface of ceramics such as oxides, carbides, borides, nitrides, and composites thereof, and joining a metallic member through a solder to the metallized surface.

52. 发明授权

US07999210B2 Heating device for manufacturing semiconductor 有权
标题翻译：半导体制造用加热装置
公开(公告)号：US07999210B2
公开(公告)日：2011-08-16
申请号：US10489174
申请日：2003-02-26
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/30 , F27B5/04 , F27B5/14 , F27D5/00 , F27D11/00 , H05B3/74
CPC分类号： H01L21/67103
摘要： A heating device for manufacturing semiconductor capable of uniformly heating a wafer or other materials to be treated, and in particular a heating device in a coater-developer used for heat-hardening of resin film for photolithography and for heat-calcining of low-dielectric constant insulating film, is provided.A device of this invention comprises a ceramic holder 1 having a resistive heating element 2 embedded therein, which holds and heats a wafer 6 or another material to be treated; a cylindrical support member 4 which supports the ceramic holder 1; and a chamber 5 which houses these. The support member 4 and ceramic holder 1 are not hermetically sealed, or alternatively the atmospheres within the cylindrical support member 4 and within the chamber 5 are maintained to be substantially the same by adjusting the introduction and evacuation of gas.
摘要翻译：一种用于制造半导体的加热装置，其能够均匀地加热待处理的晶片或其他材料，特别是用于光刻用树脂膜的热硬化的涂布机显影剂中的加热装置以及低介电常数的热煅烧绝缘膜。本发明的装置包括陶瓷保持器1，其具有嵌入其中的电阻加热元件2，其保持并加热晶片6或另一待处理材料; 支撑陶瓷保持器1的圆柱形支撑构件4; 和一个容纳这些的房间5。支撑构件4和陶瓷保持器1不是气密密封的，或者通过调节气体的引入和排出，圆柱形支撑构件4内和室5内的气氛保持基本相同。

53. 发明授权

US07837798B2 Semiconductor processing apparatus with a heat resistant hermetically sealed substrate support 有权
标题翻译：具有耐热密封基板支架的半导体加工装置
公开(公告)号：US07837798B2
公开(公告)日：2010-11-23
申请号：US10480166
申请日：2003-03-03
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68792 , C23C16/4409 , C23C16/458 , C23C16/4583 , H01L21/67103
摘要： An apparatus for manufacturing a semiconductor or liquid crystal is provided with a reaction chamber housing a ceramic holder with an embedded resistive heating element, and a cylindrical support member one end of which supports the ceramic holder and the other end of which side is fixed to the reaction chamber. One end of the cylindrical support member is hermetically bonded to the ceramic holder; and a partition plate and sealing material hermetically seal the other end of which side. Embodiments include partitioning the space within the cylindrical support member with the ceramic holder, and the partition plate and depressurizing to vacuum or to a reduced pressure atmosphere of an inert gas. Advantageously the cylindrical support member can easily be hermetically sealed, corrosion and oxidation of electrode terminals exposed on the rear surface of the ceramic holder prevented, the thermal uniformity and thermal efficiency of the holder improved, and the length of the cylindrical support member reduced, thereby reducing the size of the reaction chamber.
摘要翻译：一种用于制造半导体或液晶的装置设置有容纳具有嵌入式电阻加热元件的陶瓷保持器的反应室和一个圆柱形支撑构件，其一端支撑陶瓷保持器，另一端固定到反应室。圆柱形支撑构件的一端气密地粘合到陶瓷支架上; 并且分隔板和密封材料气密地密封在该侧的另一端。实施例包括将圆柱形支撑构件中的空间与陶瓷保持器分隔开，并将分隔板减压至真空或减压惰性气体气氛。有利地，可以容易地使圆柱形支撑构件气密地密封，暴露在陶瓷支架的后表面上的电极端子的腐蚀和氧化被防止，保持器的热均匀性和热效率提高，并且圆柱形支撑构件的长度减小，由此减小反应室的尺寸。

54. 发明申请

US20100242844A1 HOLDER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：半导体制造设备用夹具
公开(公告)号：US20100242844A1
公开(公告)日：2010-09-30
申请号：US12751753
申请日：2010-03-31
申请人： Akira KUIBIRA , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira KUIBIRA , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/4757
CPC分类号： H01L21/68792 , H01L21/67103
摘要： A holder for semiconductor manufacturing equipment is provided, in which electrical leakage and sparks do not occur across the electrode terminals and lead wires to supply power to a resistive heating element embedded in a holder, and the thermal uniformity in the holder is within ±1.0%.The holder for semiconductor manufacturing equipment, that is provided in a chamber to which reactive gas is supplied, comprises a ceramic holder 1 which holds a treated material 10 on a surface thereof and is provided with a resistive heating element 2 for heating the material to be treated, and a support member 6 one end of which supports the ceramic holder 1 at a position other than the surface holding the material to be treated, and the other end of which is fixed to the chamber. Electrode terminals 3 and lead wires 4 of the resistive heating element 2 provided at a portion other than the surface of the ceramic holder 1 holding the material to be treated are housed within an insulating tube 5 in the holder 1 for the semiconductor manufacturing equipment.
摘要翻译：提供一种用于半导体制造设备的保持器，其中在电极端子和引线之间不发生漏电和火花以向嵌入在保持器中的电阻加热元件供电，并且保持器中的热均匀性在±1.0％。设置在供应反应气体的室中的半导体制造设备用保持器包括在其表面上保持处理材料10的陶瓷保持器1，并且设置有用于加热材料的电阻加热元件2 以及支撑构件6，其一端在保持待处理材料的表面之外的位置处支撑陶瓷保持器1，并且另一端固定到腔室。设置在保持待处理材料的陶瓷保持架1的表面以外的电阻加热元件2的电极端子3和引线4被容纳在用于半导体制造设备的保持器1中的绝缘管5内。

55. 发明申请

US20090283034A1 WAFER HOLDER, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：滤波器及其制造方法及半导体制造设备
公开(公告)号：US20090283034A1
公开(公告)日：2009-11-19
申请号：US11996728
申请日：2007-05-21
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
IPC分类号： B05C13/02 , B32B38/14
CPC分类号： H01L21/67109 , C23C16/4586 , H01L21/6831 , H01L21/68757
摘要： A wafer holder is provided that can be used in wafer processes at room temperature or lower and that is particularly suited for use in a CVD apparatus.The wafer holder 1 has a wafer-mounting surface. The wafer holder 1 is made of ceramic and has a flow channel 3 that allows coolant to flow to the interior of the wafer holder in order to cool the wafer holder 1, and is furthermore preferably provided with a high-frequency generating electrode 2. The wafer holder 1 can be manufactured having a flow channel 3 formed in one of the ceramic substrates, at least another ceramic substrate is joined to the ceramic substrate so as to cover the flow channel 3, and a ceramic plate in which a high-frequency generating electrode 2 is formed is preferably additionally joined to the other substrates.
摘要翻译：提供了可以在室温或更低的晶片工艺中使用并且特别适用于CVD设备的晶片保持器。晶片保持架1具有晶片安装面。晶片保持器1由陶瓷制成，并且具有允许冷却剂流向晶片保持器内部以便冷却晶片保持器1的流动通道3，并且还优选地设置有高频发生电极2。可以制造具有形成在一个陶瓷基板中的流路3的晶片保持架1，至少另一陶瓷基板与陶瓷基板接合以覆盖流路3，陶瓷基板的高频发生形成的电极2优选地另外连接到其它基板。

56. 发明申请

US20090142479A1 Method of Manufacturing Semiconductor Device-Fabrication Wafer Holder 审中-公开
标题翻译：制造半导体器件制造晶圆架的方法
公开(公告)号：US20090142479A1
公开(公告)日：2009-06-04
申请号：US12367558
申请日：2009-02-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： B05D3/12
CPC分类号： H01L21/67103 , H01L21/6831
摘要： Wafer holder and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein incidence of warping and cracking when the wafer holder is heated is slight. In the wafer holder having a wafer-carrying surface, electrical circuitry consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder; and by rendering pores present in the circuitry, the incidence of warping and cracking can be made very slight. The electrical circuitry is preferably any of an electrode circuit for an electrostatic chuck, a resistive-heating-element circuit, an RF-power electrode circuit, and a high-voltage-generating electrode circuit.
摘要翻译：晶片保持器和其中安装有保持器的半导体制造设备，具有晶片承载表面的晶片保持器，其中晶片保持器被加热时的翘曲和开裂的发生率很小。在具有晶片承载表面的晶片保持器中，在晶片保持器的表面或内部形成由一个或多个烧结层组成的电路; 并且通过使电路中存在毛孔，翘曲和开裂的发生率可以非常轻微。电路优选为静电卡盘的电极电路，电阻加热元件电路，RF功率电极电路以及高压发生电极电路中的任一种。

57. 发明申请

US20090126903A1 HEAT TRANSFER MEMBER, CONVEX STRUCTURAL MEMBER, ELECTRONIC APPARATUS, AND ELECTRIC PRODUCT 审中-公开
标题翻译：热转印构件，导电结构构件，电子设备和电气产品
公开(公告)号：US20090126903A1
公开(公告)日：2009-05-21
申请号：US11996580
申请日：2007-04-18
申请人： Akira Kuibira , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： F28F9/00
CPC分类号： H05K7/20963 , F28F3/048 , F28F13/18 , F28F19/02 , H01L23/3677 , H01L23/3735 , H01L23/433 , H01L2924/0002 , H01L2924/00
摘要： A heat transfer member (20) has a support (1), and columnar bodies (2) all or some of which are disposed so as to be inclined at an angle with respect to the support (1). The columnar bodies (2) are in contact with a contacted body (21), and the columnar bodies (2) elastically deform and/or plastically deform along the shape of the contact surface with the contacted body (21) to thereby make direct contact along the wavy and rough irregularities of the contacted body (21), and to cause heat to move through the columnar bodies (2).
摘要翻译：传热构件（20）具有支撑件（1），并且柱状体（2）全部或部分设置成相对于支撑件（1）倾斜一定角度。柱状体（2）与接触体（21）接触，并且柱状体（2）沿着与接触体（21）的接触表面的形状弹性变形和/或塑性变形，从而直接接触沿着接触体（21）的波浪和粗糙的不规则，并且使热量移动通过柱状体（2）。

58. 发明授权

US07425838B2 Body for keeping a wafer and wafer prober using the same 有权
标题翻译：保持晶圆和晶圆探测器的身体使用相同
公开(公告)号：US07425838B2
公开(公告)日：2008-09-16
申请号：US11485624
申请日：2006-07-13
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： H01L21/67109 , G01R31/2865 , G01R31/2877
摘要： According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a cavity portion is formed between the chuck top and the bottom portion of the supporting member, and there is provided, in the cavity portion, at least a portion of a cooling mechanism for cooling at least one of the chuck top and the supporting member. Further, there is provided a wafer prober using the wafer holding member.
摘要翻译：根据本发明，提供一种晶片保持构件，用于检查半导体晶片的晶片保持构件，该半导体晶片包括卡盘顶部和用于支撑卡盘顶部的支撑构件，其中支撑构件具有面向卡盘的底部顶部，在支撑构件的卡盘顶部和底部之间形成空腔部分，并且在空腔部分中设置有用于冷却卡盘顶部和支撑件中的至少一个的冷却机构的至少一部分会员。此外，提供了使用晶片保持构件的晶片探测器。

59. 发明申请

US20080083979A1 Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder 审中-公开
标题翻译：晶圆架和半导体制造装置配有晶圆座
公开(公告)号：US20080083979A1
公开(公告)日：2008-04-10
申请号：US11544725
申请日：2006-10-10
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L23/12
CPC分类号： H01J37/32559 , H01J37/32091 , H01J2237/2001
摘要： A wafer holder for a semiconductor manufacturing apparatus is provided with which a film may be evenly formed over the entire wafer surface and the incidence of particle generation is low, as well as a semiconductor manufacturing apparatus equipped with same.The wafer holder of the present invention is a ceramic wafer holder in which a heating body and a high-frequency electrode are embedded, and a diameter of the high-frequency electrode embedded in the ceramic is greater than the diameter of an upper high-frequency electrode disposed opposite the high-frequency electrode. A main component of the ceramic is preferably aluminum nitride, and the high-frequency electrode is preferably in the form of a film.
摘要翻译：提供了一种半导体制造装置的晶片保持器，其中可以在整个晶片表面上均匀地形成膜并且颗粒产生的发生率低，以及配备其的半导体制造装置。本发明的晶片保持器是嵌入加热体和高频电极的陶瓷晶片保持器，嵌入陶瓷的高频电极的直径大于上部高频的直径电极与高频电极相对设置。陶瓷的主要成分优选为氮化铝，高频电极优选为膜状。

60. 发明授权

US07342204B2 Heater and heating device 失效
标题翻译：加热器和加热装置
公开(公告)号：US07342204B2
公开(公告)日：2008-03-11
申请号：US10987292
申请日：2004-11-15
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Kenji Shinma
IPC分类号： H05B3/68 , H05B3/00
CPC分类号： H01L21/67103 , H05B3/143
摘要： A low-radiation-rate film, made of a material whose radiation rate is lower than that of a heater substrate, is formed at least entirely over the surface of a heat-subject-placing surface of a heater substrate. By applying patterning to the low-radiation-rate film, the exposure rate of the heater substrate is varied such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof, thereby enabling a uniform temperature across the surface. In addition, the power supply is reduced, thermal stress is eliminated, the wiring design flexibility is increased, and the reliability is increased by preventing short-circuit accidents.
摘要翻译：由放射率低于加热器基板的材料制成的低辐射率膜至少整个地形成在加热器基板的热对象放置表面的表面上。通过向低辐射率膜施加图案化，加热器基板的曝光率变化，使得辐射率从热被摄体放置表面的中心部分朝向其外周部分变小，从而能够整个表面温度均匀。此外，电源减少，热应力消除，布线设计灵活性提高，通过防止短路事故提高可靠性。

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