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51. 发明授权

US07427572B2 Method and apparatus for forming silicon nitride film 有权
标题翻译：用于形成氮化硅膜的方法和装置
公开(公告)号：US07427572B2
公开(公告)日：2008-09-23
申请号：US11186892
申请日：2005-07-22
申请人： Kazuhide Hasebe , Mitsuhiro Okada
发明人： Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/0228 , H01L21/0234 , H01L21/3185
摘要： A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas containing a nitriding gas to the process field, and set the process field at a first temperature and a first pressure, for a first time period. The method then nitrides a surface of the silicon nitride film in the process field. This step is arranged to supply a surface-treatment gas containing a nitriding gas to the process field without supplying the first process gas, and set the process field at a second temperature and a second pressure, for a second time period shorter than the first time period.
摘要翻译：用于形成氮化硅膜的方法首先在反应容器内的工艺场中通过CVD沉积目标衬底上的氮化硅膜。该步骤被布置成将含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体供应到工艺现场，并将工艺场设置在第一温度和第一压力下，持续第一时间段。该方法然后在工艺领域中氮化氮化硅膜的表面。该步骤被布置成在不提供第一处理气体的情况下将含有氮化气体的表面处理气体供给到处理场，并将处理场设置在第二温度和第二压力下，比第一次短期。

52. 发明申请

US20080107824A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20080107824A1
公开(公告)日：2008-05-08
申请号：US11896752
申请日：2007-09-05
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/513 , C23C16/40 , B05C11/00
CPC分类号： C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
摘要翻译：在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和包括初步处理气体的第三工艺气体。第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

53. 发明申请

US20070167028A1 FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 失效
标题翻译：薄膜形成方法和半导体工艺设备
公开(公告)号：US20070167028A1
公开(公告)日：2007-07-19
申请号：US11623483
申请日：2007-01-16
申请人： Pao-Hwa CHOU , Kazuhide Hasebe
发明人： Pao-Hwa CHOU , Kazuhide Hasebe
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/36 , C23C16/452 , C23C16/45531 , C23C16/45546 , H01L21/02167 , H01L21/02211 , H01L21/3148 , H01L21/318
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
摘要翻译：通过CVD在靶基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体的第二工艺气体和含有碳氢化合物气体的第三工艺气体的工艺领域。该方法包括重复地向处理区域供应第一处理气体，向处理区域供应第二处理气体，以及向处理区域供应第三处理气体。第三处理气体的供给包括通过激励机构激励第三处理气体的向处理场供给第三处理气体的激励期间。

54. 发明授权

US07129186B2 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US07129186B2
公开(公告)日：2006-10-31
申请号：US10992469
申请日：2004-11-19
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体和还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

55. 发明申请

US20060207504A1 Film formation method and apparatus for semiconductor process 审中-公开
公开(公告)号：US20060207504A1
公开(公告)日：2006-09-21
申请号：US11367339
申请日：2006-03-06
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
IPC分类号： C23C16/00
CPC分类号： C23C16/45512 , C23C16/345 , C23C16/45531 , C23C16/45542 , C23C16/45578 , C23C16/509
摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

56. 发明申请

US20060199398A1 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US20060199398A1
公开(公告)日：2006-09-07
申请号：US11289330
申请日：2005-11-30
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/00
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

57. 发明申请

US20060021570A1 Reduction in size of hemispherical grains of hemispherical grained film 审中-公开
标题翻译：半球形颗粒膜的半球形颗粒的尺寸减小
公开(公告)号：US20060021570A1
公开(公告)日：2006-02-02
申请号：US11192312
申请日：2005-07-29
申请人： Kazuhide Hasebe , Norifumi Kimura , Takehiko Fujita , Yoshikazu Furusawa
发明人： Kazuhide Hasebe , Norifumi Kimura , Takehiko Fujita , Yoshikazu Furusawa
IPC分类号： C30B23/00 , B05C11/00 , H01L21/26
CPC分类号： C30B25/18 , C30B25/105 , C30B29/06 , H01L28/84
摘要： A hemispherical grained (HSG) film is oxidized to form an oxidized layer at the surface part of the HSG film, and then the oxidized layer is etched to be removed. The size of the hemispherical grains after etching is smaller than that as formed.
摘要翻译：半球形颗粒（HSG）膜被氧化以在HSG膜的表面部分形成氧化层，然后蚀刻氧化层以除去。蚀刻后的半球状粒子的尺寸小于所形成的半球状粒子的尺寸。

58. 发明申请

US20050255711A1 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US20050255711A1
公开(公告)日：2005-11-17
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/02 , H01L21/28 , H01L21/316 , H01L29/51 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

59. 发明申请

US20050181586A1 Vertical CVD apparatus for forming silicon-germanium film 审中-公开
标题翻译：用于形成硅 - 锗膜的垂直CVD装置
公开(公告)号：US20050181586A1
公开(公告)日：2005-08-18
申请号：US10965789
申请日：2004-10-18
申请人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： C23C16/42 , C23C16/22 , C23C16/455 , H01L21/205 , H01L21/265 , H01L21/285
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

60. 发明授权

US08940097B2 Vertical heat treatment apparatus 有权
标题翻译：立式热处理设备
公开(公告)号：US08940097B2
公开(公告)日：2015-01-27
申请号：US13284269
申请日：2011-10-28
申请人： Kazuhide Hasebe
发明人： Kazuhide Hasebe
IPC分类号： C23C16/46 , B05C11/00 , B05C13/00 , C23C16/458 , H01L21/67 , H01L21/673 , C23C16/24 , C23C16/455 , B05C13/02
CPC分类号： C23C16/24 , B05C11/00 , B05C13/02 , C23C16/45574 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/4588 , H01L21/67303 , H01L21/67309
摘要： Provided is a vertical heat treatment apparatus which performs a film-forming process for substrates by supplying a film-forming gas to a plurality of substrates loaded onto a substrate supporter. The substrate supporter is rotated around an inclination axis, and the apparatus includes: a plurality of main holders which are provided at every reception position of the substrates in the substrate supporter and respectively supports the peripheries of the substrates at positions separated from each other in the circumferential direction; and first and second auxiliary holders which are located to be separated from the main holders in the circumferential direction and whose tops are lower than those of the main holders. Each substrate alternates between a position supported by the first auxiliary holder and the main holders and a position supported by the second auxiliary holder and the main holders every rotation of the substrate supporter.
摘要翻译：提供一种垂直热处理装置，其通过向装载到基板支撑体上的多个基板供给成膜气体来对基板进行成膜处理。基板支撑体围绕倾斜轴线旋转，并且该装置包括：多个主保持器，其设置在基板支撑件中的基板的每个接收位置处，并且分别支撑基板的周边在彼此分离的位置圆周方向以及第一和第二辅助保持器，其位于与主保持器在圆周方向上分离并且其顶部低于主保持器的顶部。每个基板在由第一辅助保持器支撑的位置和主保持器之间交替位置，并且每个旋转基板支撑件由第二辅助保持器和主保持件支撑的位置交替。

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