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51. 发明申请

US20120051027A1 LIGHT PROJECTION STRUCTURE AND LIGHTING APPARATUS 有权
标题翻译：光投射结构和照明设备
公开(公告)号：US20120051027A1
公开(公告)日：2012-03-01
申请号：US13221488
申请日：2011-08-30
申请人： Koji TAKAHASHI , Katsuhiko Kishimoto , Yasuo Fukai , David Montgomery , James Suckling
发明人： Koji TAKAHASHI , Katsuhiko Kishimoto , Yasuo Fukai , David Montgomery , James Suckling
IPC分类号： F21V7/06
CPC分类号： F21S41/36 , F21S41/125 , F21S41/13 , F21S41/14 , F21S41/16 , F21S41/24 , F21S41/285 , F21S41/321 , F21S41/365
摘要： Provided is a light projection structure (10), including: a reflective member (11) including a reflective surface (11a), the reflective surface (11a) being formed as a concave surface having a focal point (f) positioned near its apex (t); and a light emitting member (12) disposed at the focal point (f) and its vicinity, for emitting light when excited by excitation light.
摘要翻译：提供了一种光投射结构（10），包括：反射构件（11），其包括反射表面（11a），所述反射表面（11a）形成为具有位于其顶点附近的焦点（f）的凹面 t）; 以及设置在焦点（f）及其附近的发光部件（12），用于当被激发光激发时发光。

52. 发明申请

US20110248624A1 ILLUMINATING DEVICE AND VEHICLE HEADLAMP 审中-公开
标题翻译：照明装置和车辆头灯
公开(公告)号：US20110248624A1
公开(公告)日：2011-10-13
申请号：US13081295
申请日：2011-04-06
申请人： Katsuhiko Kishimoto , Yuji Yokosawa , Yoshitaka Tomomura
发明人： Katsuhiko Kishimoto , Yuji Yokosawa , Yoshitaka Tomomura
IPC分类号： H01J1/63
CPC分类号： C09K11/0883 , C09K11/7721 , C09K11/7734 , F21S41/141 , F21S41/143 , F21S41/16 , F21S41/285 , G02B6/0006 , G02B6/0008 , G02B6/4206 , G02B6/4403 , H01S5/005 , H01S5/02212 , H01S5/32341 , H01S5/4031
摘要： A headlamp 1 includes: laser diodes 2 that emit excitation light; and a light emitting part 5 that emits light upon receiving the excitation light emitted from the laser diodes 2, the light emitting part 5 containing a first fluorescent material and a second fluorescent material, the first fluorescent material having its emission spectrum peak in a range of not less than 500 nm but not more than 520 nm, the second fluorescent material having an emission spectrum peak which is different from the emission spectrum peak of the first fluorescent material. In a spectrum of the light emitted from the light emitting part 5, a luminous intensity at the emission spectrum peak of the first fluorescent material is higher than a luminous intensity in an emission spectrum covering a range of not less than 540 nm but not more than 570 nm. This allows the headlamp 1 to emit illumination light which achieves a high visibility of an irradiation target at least in a dark place.
摘要翻译：头灯1包括：发射激发光的激光二极管2; 以及发光部5，其在接受从激光二极管2发射的激发光时发光，所述发光部5含有第一荧光材料和第二荧光材料，所述第一荧光体的发光光谱峰值在不小于500nm但不大于520nm，第二荧光材料具有与第一荧光材料的发射光谱峰不同的发光光谱峰。在从发光部5发出的光的光谱中，第一荧光体的发光光谱峰值的发光强度高于覆盖540nm以上范围的发光光谱的发光强度 570nm。这允许前照灯1发射至少在黑暗处实现照射目标的高可见度的照明光。

53. 发明申请

US20110194302A1 LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND VEHICLE HEADLIGHT 有权
标题翻译：发光装置，照明装置和车辆头灯
公开(公告)号：US20110194302A1
公开(公告)日：2011-08-11
申请号：US13023300
申请日：2011-02-08
申请人： Katsuhiko Kishimoto , Koji Takahashi , Shigetoshi Ito , Hidenori Kawanishi
发明人： Katsuhiko Kishimoto , Koji Takahashi , Shigetoshi Ito , Hidenori Kawanishi
IPC分类号： B60Q1/04 , F21V8/00
CPC分类号： G02B6/0008 , F21S41/143 , F21S41/16 , F21S41/24
摘要： A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.
摘要翻译：本发明的发光器件包括：产生多个激光束的激光二极管组; 响应于所述多个激光束发射非相干光的圆柱形发光元件; 以及导光照射部，其将通过光入射面进入的多个激光束引导向光照射面，并且（ii）用这样引导的多个激光束照射圆筒形发光元件的光照射区域。光导照射部的光照射面的面积比光入射面的面积小。

54. 发明申请

US20090231874A1 HEADLAMP AND VEHICLE INFRARED NIGHT VISION APPARATUS EMPLOYING THE HEADLAMP AS LIGHT SOURCE 有权
标题翻译：头灯和车载红外线视觉设备作为光源使用头灯
公开(公告)号：US20090231874A1
公开(公告)日：2009-09-17
申请号：US12402309
申请日：2009-03-11
申请人： Katsuhiko Kishimoto , Junichi Kinomoto
发明人： Katsuhiko Kishimoto , Junichi Kinomoto
IPC分类号： B60Q1/04 , F21V9/16
CPC分类号： B60Q1/04
摘要： A headlamp is provided, which has lower power consumption, a longer service life and a more compact size and yet is capable of easily projecting visible light and near infrared light in desired light distribution patterns. The headlamp includes a wavelength converting member and an excitation light source. The wavelength converting member includes a visible light fluorescent material which is excited by excitation light emitted from the excitation light source to emit visible light, and a near infrared fluorescent material which is excited by the excitation light emitted from the excitation light source to emit near infrared light. The visible light and the excitation light are mixed together to generate white light. The excitation light source is a semiconductor solid-state element.
摘要翻译：提供了一种头灯，其具有较低的功率消耗，更长的使用寿命和更紧凑的尺寸，并且能够容易地将可见光和近红外光投射在期望的光分布图案中。前照灯包括波长转换构件和激发光源。波长转换构件包括由从激发光源发射的激发光激发以发射可见光的可见光荧光材料和由从激发光源发射的激发光激发以发射近红外的近红外荧光材料光。将可见光和激发光混合在一起产生白光。激发光源是半导体固态元件。

55. 发明授权

US07558307B2 Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 有权
标题翻译：半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统
公开(公告)号：US07558307B2
公开(公告)日：2009-07-07
申请号：US11058618
申请日：2005-02-16
申请人： Katsuhiko Kishimoto , Yoshie Fujishiro
发明人： Katsuhiko Kishimoto , Yoshie Fujishiro
IPC分类号： H01S5/00
CPC分类号： G11B7/127 , H01L2224/45144 , H01L2224/48091 , H01L2924/181 , H01S5/0206 , H01S5/02228 , H01S5/02248 , H01S5/02288 , H01S5/0425 , H01S5/0655 , H01S5/22 , H01S5/305 , H01S5/3072 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.
摘要翻译：在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114），p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + -GaAs接触层（113））形成了。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

56. 发明授权

US07537945B2 Semiconductor laser device and method of manufacturing the same, and optical transmission module and optical disk apparatus using the semiconductor laser device 失效
标题翻译：半导体激光器件及其制造方法以及使用半导体激光器件的光传输模块和光盘装置
公开(公告)号：US07537945B2
公开(公告)日：2009-05-26
申请号：US11730316
申请日：2007-03-30
申请人： Shuichi Hirukawa , Katsuhiko Kishimoto
发明人： Shuichi Hirukawa , Katsuhiko Kishimoto
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2224/48227 , H01L2224/8592 , H01L2924/181 , H01L2924/1815 , H01S5/0202 , H01S5/02252 , H01S5/02288 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/22 , H01S5/2231 , H01S5/34353 , H01L2924/00012 , H01L2924/00014
摘要： Provided are a semiconductor laser device capable of stable operation at the time of high power output without damage to a resonator end surface and a method of manufacturing the same, as well as an optical transmission module and an optical disk apparatus using the semiconductor laser device. A method of manufacturing a semiconductor laser device includes a laser wafer formation step of forming a laser wafer at least having a semiconductor layer to form a resonator end surface, a cleavage step of cleaving the laser wafer in the atmosphere and forming a semiconductor laser element having the resonator end surface, a contact step of brining the resonator end surface in contact with a nitrogen containing gas containing 90-100 volume % nitrogen for one hour or longer, and a reflectance control film formation step of forming a reflectance control film in contact with the resonator end surface.
摘要翻译：提供一种在高功率输出时能够稳定工作而不破坏谐振器端面的半导体激光器件及其制造方法，以及使用该半导体激光器件的光传输模块和光盘装置。一种制造半导体激光器件的方法包括：激光晶片形成步骤，形成至少具有半导体层以形成谐振器端面的激光晶片;切割步骤，在大气中切割激光晶片;形成半导体激光元件，所述谐振器端面，将所述谐振器端面与包含90-100体积％氮气的含氮气体接触1小时以上的接触步骤，以及反射控制膜形成步骤，形成与谐振器端面。

57. 发明申请

US20060186420A1 Semiconductor device such as semiconductor laser device and manufacturing method therefor, and optical transmission module and optical disk unit employing the semiconductor laser device 有权
标题翻译：半导体装置，例如半导体激光装置及其制造方法，以及采用半导体激光装置的光传输模块和光盘装置
公开(公告)号：US20060186420A1
公开(公告)日：2006-08-24
申请号：US11357941
申请日：2006-02-22
申请人： Shuichi Hirukawa , Katsuhiko Kishimoto
发明人： Shuichi Hirukawa , Katsuhiko Kishimoto
IPC分类号： H01L31/12
CPC分类号： H01L25/167 , B82Y20/00 , H01L2924/0002 , H01S5/0425 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/34313 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.
摘要翻译：在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。在涂有薄膜的表面上的法线矢量具有向上的分量。

58. 发明授权

US07072019B1 Liquid crystal display device and method for fabricating the same 失效
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07072019B1
公开(公告)日：2006-07-04
申请号：US09604677
申请日：2000-06-27
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： G02F1/1339 , G02F1/1337
CPC分类号： G02F1/1337 , G02F1/1393 , G02F2001/133776
摘要： The liquid crystal display device of the present invention includes: a first substrate; a second substrate; a liquid crystal layer sandwiched by the first and second substrates; and wall structures formed on a surface of the first substrate facing the liquid crystal layer for dividing the liquid crystal layer into a plurality of liquid crystal regions. Liquid crystal molecules in the plurality of liquid crystal regions are aligned axially symmetrically with respect to an axis vertical to a surface of the first substrate. The liquid crystal regions have a shape of a polygon having dulled corners. The alignment direction of the liquid crystal molecules in the liquid crystal regions with respect to side faces of the wall structures in the corners changes continuously.
摘要翻译：本发明的液晶显示装置包括：第一基板; 第二基板; 夹在第一和第二基板之间的液晶层; 以及形成在面向液晶层的第一基板的表面上的壁结构，用于将液晶层分割成多个液晶区域。多个液晶区域中的液晶分子相对于垂直于第一基板的表面的轴线对称地对准。液晶区域具有多角形具有钝角的形状。液晶区域中的液晶分子相对于角部的壁结构的侧面的取向方向连续变化。

59. 发明申请

US20050213628A1 Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 有权
标题翻译：半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统
公开(公告)号：US20050213628A1
公开(公告)日：2005-09-29
申请号：US11058618
申请日：2005-02-16
申请人： Katsuhiko Kishimoto , Yoshie Fujishiro
发明人： Katsuhiko Kishimoto , Yoshie Fujishiro
IPC分类号： G11B7/125 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/30
CPC分类号： G11B7/127 , H01L2224/45144 , H01L2224/48091 , H01L2924/181 , H01S5/0206 , H01S5/02228 , H01S5/02248 , H01S5/02288 , H01S5/0425 , H01S5/0655 , H01S5/22 , H01S5/305 , H01S5/3072 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.
摘要翻译：在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114），p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + > -GaAs接触层（113））。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

60. 发明授权

US06721024B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06721024B1
公开(公告)日：2004-04-13
申请号：US09612389
申请日：2000-07-07
申请人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
发明人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
IPC分类号： G02F113
CPC分类号： G02F1/133707 , G02F1/133753 , G02F1/1397 , G02F2001/133374 , G02F2001/133757
摘要： The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched by the first and second substrates. The first substrate includes polymer walls made of a transparent resin, the liquid crystal layer has a plurality of liquid crystal regions separated from one another by the polymer walls, and liquid crystal molecules in the plurality of liquid crystal regions are aligned axially symmetrically with respect to respective axes formed in the plurality of liquid crystal regions, the axes being vertical to a surface of the first substrate, and liquid crystal molecules above the polymer walls are aligned axially symmetrically with respect to respective axes formed on the polymer walls, the axes being vertical to the surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括第一基板，第二基板以及被第一基板和第二基板夹持的液晶层。第一基板包括由透明树脂制成的聚合物壁，液晶层具有通过聚合物壁彼此分离的多个液晶区域，并且多个液晶区域中的液晶分子相对于形成在多个液晶区域中的各轴，该轴垂直于第一基板的表面，并且聚合物壁上方的液晶分子相对于形成在聚合物壁上的相应轴线轴对称地排列，轴是垂直的到第一基板的表面。

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