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51. 发明授权

US07893452B2 Optoelectronic component and package for an optoelectronic component 有权
标题翻译：用于光电子元件的光电元件和封装
公开(公告)号：US07893452B2
公开(公告)日：2011-02-22
申请号：US11575797
申请日：2005-09-28
申请人： Volker Härle
发明人： Volker Härle
IPC分类号： H01L31/00
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip and a chip encapsulating eclement, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.
摘要翻译：具有适于发射主要电磁辐射的半导体芯片的光电子部件，具有用于接收半导体芯片的凹部和用于半导体芯片和芯片封装元件的外部电连接的电引线的基本封装体，其包围半导体芯片在凹槽中。基本封装体至少部分地透射至少部分主要辐射，并且半导体芯片的光轴穿过基本封装主体。基本封装主体包括发光转换材料，其适于将至少部分初级辐射转换成与初级辐射相比至少部分变化的波长的次级辐射。

52. 发明授权

US07885306B2 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US07885306B2
公开(公告)日：2011-02-08
申请号：US11824877
申请日：2007-07-02
申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译：指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2）结构（50）包括用于产生辐射的活动区（5）。

53. 发明授权

US09431580B2 Method for producing an optoelectronic component, and an optoelectronic component 有权
标题翻译：光电子元件的制造方法以及光电元件
公开(公告)号：US09431580B2
公开(公告)日：2016-08-30
申请号：US11904203
申请日：2007-09-26
申请人： Volker Härle , Christine Höss , Alfred Lell , Uwe Strauss
发明人： Volker Härle , Christine Höss , Alfred Lell , Uwe Strauss
IPC分类号： H01L33/00 , H01L33/44 , H01S5/028
CPC分类号： H01L33/44 , H01L2933/0025 , H01L2933/0041 , H01S5/0282 , H01S5/0287 , H01S2301/176
摘要： A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.
摘要翻译：一种用于制造光电子部件的方法，包括以下步骤：提供具有至少一个有源区的半导体层序列，其中所述有源区适用于在操作期间发射电磁辐射;以及在所述半导体层的第一表面上施加至少一层通过离子辅助施用方法进行。

54. 发明授权

US08304799B2 Optoelectronic component and package for an optoelectronic component 有权
标题翻译：用于光电子元件的光电元件和封装
公开(公告)号：US08304799B2
公开(公告)日：2012-11-06
申请号：US13030714
申请日：2011-02-18
申请人： Volker Härle
发明人： Volker Härle
IPC分类号： H01L33/50
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.
摘要翻译：具有适于发射主要电磁辐射的半导体芯片的光电子部件，具有用于接收半导体芯片的凹部和用于半导体芯片的外部电连接的电引线的基本封装体以及芯片封装元件，其中将半导体芯片封装在凹槽中。基本封装体至少部分地透射至少部分主要辐射，并且半导体芯片的光轴穿过基本封装主体。基本封装主体包括发光转换材料，其适于将至少部分初级辐射转换成与初级辐射相比至少部分变化的波长的次级辐射。

55. 发明授权

US08088649B2 Radiation-emitting semiconductor body with carrier substrate and method for the producing the same 失效
标题翻译：具有载体衬底的辐射发射半导体体及其制造方法
公开(公告)号：US08088649B2
公开(公告)日：2012-01-03
申请号：US12299446
申请日：2007-05-03
申请人： Volker Härle , Zeljko Spika
发明人： Volker Härle , Zeljko Spika
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/42 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.
摘要翻译：具有载体衬底的辐射发射半导体本体及其制造方法。在该方法中，在半导体层序列（2）和载体基板晶片（1）之间产生结构化连接。半导体层序列通过半导体层序列通过切口（6）被分成多个半导体层堆叠（200），并且载体衬底晶片（1）通过装置被细分为多个载体衬底（100）的切口（7）穿过载体基板晶片（1）。在该方法中，结构化连接形成为使得至少一个半导体层堆叠（200）连接到一个且仅一个相关联的载体基板（100）。此外，穿过载体衬底晶片的至少一个切口（7）不通过半导体层序列中的任何切口（6）延伸，使得通过载体衬底晶片和半导体层序列产生直线切割。

56. 发明申请

US20100091516A1 Arrangement Comprising a Fiber-Optic Waveguide 有权
标题翻译：包括光纤波导的布置
公开(公告)号：US20100091516A1
公开(公告)日：2010-04-15
申请号：US12306923
申请日：2007-06-15
申请人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
发明人： Volker Härle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
IPC分类号： G02B6/04 , G01N21/88 , G02B6/02 , G01N27/04
CPC分类号： G01M11/088 , B60Q1/0011 , B60Q11/005 , F21S8/06 , F21S41/13 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , F21S45/47 , F21V3/061 , F21V3/062 , F21V3/10 , F21V7/005 , F21V7/045 , F21V7/22 , F21V9/30 , F21Y2103/00 , G01M11/30
摘要： An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).
摘要翻译：一种包括光纤波导（10）和检测装置（25）的装置，其中光纤波导（10）包括芯区（10E）和围绕芯区（10E）的包层区（10C）其中所述芯区域具有比所述包层区域更高的折射率，并且其中所述检测装置（25）可以检测对所述光纤波导（10）的损坏。

57. 发明申请

US20090309113A1 Optoelectronic Semiconductor Component 有权
标题翻译：光电半导体元件
公开(公告)号：US20090309113A1
公开(公告)日：2009-12-17
申请号：US12298703
申请日：2007-04-25
申请人： Christoph Eichler , Stephan Miller , Uwe Sterauss , Volker Härle , Matthias Sabathil
发明人： Christoph Eichler , Stephan Miller , Uwe Sterauss , Volker Härle , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译：一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。有用层具有远离载体基底的分离区域。

58. 发明授权

US07005681B2 Radiation-emitting semiconductor component and method for making same 有权
标题翻译：辐射发射半导体元件及其制造方法
公开(公告)号：US07005681B2
公开(公告)日：2006-02-28
申请号：US10488489
申请日：2002-08-30
申请人： Stefan Bader , Viorel Dumitru , Volker Härle , Bertram Kuhn , Alfred Lell , Jürgen Off , Ferdinand Scholz , Heinz Schweizer
发明人： Stefan Bader , Viorel Dumitru , Volker Härle , Bertram Kuhn , Alfred Lell , Jürgen Off , Ferdinand Scholz , Heinz Schweizer
IPC分类号： H10L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/30 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/3063 , H01S5/32341 , H01L2924/00
摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.
摘要翻译：一种具有半导体主体（1）的辐射发射半导体部件，其具有含有InGaN或AlInGaN的发射有机层（9）和p导电接触层（2），并且接触金属化（3）被申请;被应用。

59. 发明授权

US08994000B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08994000B2
公开(公告)日：2015-03-31
申请号：US13546857
申请日：2012-07-11
申请人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L29/06 , H01S5/343 , B82Y20/00 , H01L33/04 , H01S5/042 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译：光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2）用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

60. 发明授权

US08258521B2 Radiation-emitting semiconductor body with carrier substrate and method for the production thereof 失效
标题翻译：具有载体衬底的辐射发射半导体体及其制造方法
公开(公告)号：US08258521B2
公开(公告)日：2012-09-04
申请号：US13085976
申请日：2011-04-13
申请人： Volker Härle , Zeljko Spika
发明人： Volker Härle , Zeljko Spika
IPC分类号： H01L29/267 , H01L31/00
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/42 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.
摘要翻译：具有载体衬底的辐射发射半导体本体。在半导体层序列（2）和载体基板晶片（1）之间产生结构化连接。半导体层序列通过半导体层序列通过切口（6）被分成多个半导体层堆叠（200），并且载体衬底晶片（1）通过装置被细分为多个载体衬底（100）的切口（7）穿过载体基板晶片（1）。在该方法中，结构化连接形成为使得至少一个半导体层堆叠（200）连接到一个且仅一个相关联的载体基板（100）。此外，穿过载体衬底晶片的至少一个切口（7）不通过半导体层序列中的任何切口（6）延伸，使得通过载体衬底晶片和半导体层序列产生直线切割。

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