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51. 发明申请

US20080280426A1 Gallium nitride-on-silicon interface 审中-公开
标题翻译：氮化镓在硅界面
公开(公告)号：US20080280426A1
公开(公告)日：2008-11-13
申请号：US11801210
申请日：2007-05-09
申请人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
发明人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L29/739 , H01L21/20
CPC分类号： C30B29/406 , C30B25/183 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L29/2003 , H01L29/267
摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate and forms a first aluminum (Al)-containing film in compression overlying the Si substrate. Nano-column holes are formed in the first Al-containing film, which exposes regions of the underlying Si substrate. A layer of GaN layer is selectively grown from the exposed regions, covering the first Al-containing film. The GaN is grown using a lateral nanoheteroepitaxy overgrowth (LNEO) process. The above-mentioned processes are reiterated, forming a second Al-containing film in compression, forming nano-column holes in the second Al-containing film, and selectively growing a second GaN layer. Film materials such as Al2O3, Si1-xGex, InP, GaP, GaAs, AlN, AlGaN, or GaN, may be initially grown at a low temperature. By increasing the growth temperatures, a compressed layer of epitaxial GaN can be formed on a Si substrate.
摘要翻译：提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。该方法提供（111）Si衬底并且在压缩覆盖Si衬底上形成第一含铝（Al）的膜。在第一含Al膜中形成纳米柱孔，其暴露下面的Si衬底的区域。从暴露区域选择性地生长GaN层，覆盖第一含Al膜。使用横向纳米外延生长（LNEO）工艺生长GaN。重复上述过程，在压缩中形成第二含Al膜，在第二含Al膜中形成纳米柱孔，并选择性地生长第二GaN层。可以最初在低温下生长诸如Al 2 O 3 3，Si 1-x Ge x，InP，GaP，GaAs，AlN，AlGaN或GaN的膜材料。通过增加生长温度，可以在Si衬底上形成外延GaN的压缩层。

52. 发明授权

US06720258B2 Method of fabricating a nickel silicide on a substrate 有权
标题翻译：在衬底上制造硅化镍的方法
公开(公告)号：US06720258B2
公开(公告)日：2004-04-13
申请号：US10319313
申请日：2002-12-12
申请人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
发明人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L2144
CPC分类号： H01L21/28518 , H01L29/456
摘要： An integrated circuit device, and a method of manufacturing the same, comprises an epitaxial nickel silicide on (100) Si, or a stable nickel silicide on amorphous Si, fabricated with a cobalt interlayer. In one embodiment the method comprises depositing a cobalt (Co) interface layer between the Ni and Si layers prior to the silicidation reaction. The cobalt interlayer regulates the flux of the Ni atoms through the cobalt/nickel/silicon alloy layer formed from the reaction of the cobalt interlayer with the nickel and the silicon so that the Ni atoms reach the Si interface at a similar rate, i.e., without any orientation preference, so as to form a uniform layer of nickel silicide. The nickel silicide may be annealed to form a uniform crystalline nickel disilicide. Accordingly, a single crystal nickel silicide on (100) Si or on amorphous Si is achieved wherein the nickel silicide has improved stability and may be utilized in ultra-shallow junction devices.
摘要翻译：集成电路器件及其制造方法包括在（100）Si上的外延硅化镍，或者由钴中间层制造的在非晶Si上的稳定的硅化镍。在一个实施方案中，该方法包括在硅化反应之前在Ni和Si层之间沉积钴（Co）界面层。钴中间层通过由钴中间层与镍和硅的反应形成的钴/镍/硅合金层调节Ni原子的通量，使得Ni原子以相似的速率到达Si界面，即没有任何取向偏好，从而形成均匀的硅化镍层。可以将镍硅化物退火以形成均匀的结晶二硅化镍。因此，实现了（100）Si或非晶Si上的单晶硅化镍，其中硅化镍具有改进的稳定性并可用于超浅结结器件中。

53. 发明申请

US20080171424A1 Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies 审中-公开
标题翻译：使用纳米线和纳米尺度核方法在硅上外延生长GaN和SiC
公开(公告)号：US20080171424A1
公开(公告)日：2008-07-17
申请号：US11653802
申请日：2007-01-16
申请人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L21/205
CPC分类号： H01L21/02513 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
摘要翻译：在硅衬底上制造缺陷敏感材料的连续层的方法包括制备硅衬底; 在硅衬底上直接形成纳米结构阵列; 在衬底上沉积选择性生长增强层; 平滑选择性生长增强层; 并在纳米结构阵列上生长不连续的缺陷敏感材料层。

54. 发明申请

US20080173895A1 Gallium nitride on silicon with a thermal expansion transition buffer layer 审中-公开
标题翻译：具有热膨胀过渡缓冲层的硅上的氮化镓
公开(公告)号：US20080173895A1
公开(公告)日：2008-07-24
申请号：US11657149
申请日：2007-01-24
申请人： Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
发明人： Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
IPC分类号： H01L29/267 , H01L21/20
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/02656 , H01L29/045 , H01L29/2003
摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content increases with the graded SiGe film thickness.
摘要翻译：提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。该方法提供具有第一热膨胀系数（TEC）的（111）Si衬底，并且形成覆盖Si衬底的硅 - 锗（SiGe）膜。沉积SiGe膜上的缓冲层。缓冲层可以是氮化铝（AlN）或铝 - 氮化镓（AlGaN）。沉积GaN缓冲层，其具有大于第一TEC的第二TEC。 SiGe电影拥有第三个TEC，其值在第一和第二TEC之间。一方面，可以形成具有Ge含量比在约0％至50％的范围内的等级SiGe膜，其中Ge含量随着梯度SiGe膜厚度而增加。

55. 发明申请

US20080315255A1 Thermal Expansion Transition Buffer Layer for Gallium Nitride on Silicon 审中-公开
标题翻译：硅上氮化镓的热膨胀转变缓冲层
公开(公告)号：US20080315255A1
公开(公告)日：2008-12-25
申请号：US12199144
申请日：2008-08-27
申请人： Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
发明人： Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/02656 , H01L29/045 , H01L29/2003
摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content increases with the graded SiGe film thickness.
摘要翻译：提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。该方法提供具有第一热膨胀系数（TEC）的（111）Si衬底，并且形成覆盖Si衬底的硅 - 锗（SiGe）膜。沉积SiGe膜上的缓冲层。缓冲层可以是氮化铝（AlN）或铝 - 氮化镓（AlGaN）。沉积GaN缓冲层，其具有大于第一TEC的第二TEC。 SiGe电影拥有第三个TEC，其值在第一和第二TEC之间。一方面，可以形成具有Ge含量比在约0％至50％的范围内的等级SiGe膜，其中Ge含量随着梯度SiGe膜厚度而增加。

56. 发明授权

US06534871B2 Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same 失效
公开(公告)号：US06534871B2
公开(公告)日：2003-03-18
申请号：US09855391
申请日：2001-05-14
申请人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
发明人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L2348
CPC分类号： H01L21/28518 , H01L29/456
摘要： An integrated circuit device, and a method of manufacturing the same, comprises an epitaxial nickel silicide on (100) Si, or a stable nickel silicide on amorphous Si, fabricated with a cobalt interlayer. In one embodiment the method comprises depositing a cobalt (Co) interface layer between the Ni and Si layers prior to the silicidation reaction. The cobalt interlayer regulates the flux of the Ni atoms through the cobalt/nickel/silicon alloy layer formed from the reaction of the cobalt interlayer with the nickel and the silicon so that the Ni atoms reach the Si interface at a similar rate, i.e., without any orientation preference, so as to form a uniform layer of nickel silicide. The nickel silicide may be annealed to form a uniform crystalline nickel disilicide. Accordingly, a single crystal nickel silicide on (100) Si or on amorphous Si is achieved wherein the nickel silicide has improved stability and may be utilized in ultra-shallow junction devices.

57. 发明授权

US07598108B2 Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers 失效
公开(公告)号：US07598108B2
公开(公告)日：2009-10-06
申请号：US11825427
申请日：2007-07-06
申请人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
发明人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L29/2003 , H01L29/205
摘要： A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0

58. 发明申请

US20090008647A1 Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers 失效
标题翻译：使用多个铝化合物缓冲层的氮化镓 - 硅 - 硅界面
公开(公告)号：US20090008647A1
公开(公告)日：2009-01-08
申请号：US11825427
申请日：2007-07-06
申请人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
发明人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L29/15 , H01L21/20
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L29/2003 , H01L29/205
摘要： A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0
摘要翻译：已经提供了使用多种铝化合物缓冲层的硅（Si）和氮化镓（GaN）膜之间的热膨胀界面，以及相关的制造方法。该方法提供（111）Si衬底，并通过将衬底加热至1000至1200℃的较高温度，将衬底上的第一层AlN沉积在衬底上。在第一层AlN上沉积第二层AlN，较低温度为500至800℃。通过将衬底加热到较高温度范围，沉积第三层AlN，覆盖第二层AlN。然后，形成覆盖在第一层次Al1-XGaXN层上的固定组成Al1-XGaXN层的覆盖在第三层AlN上的分级Al1-XGaXN层，其中0

59. 发明申请

US20080296625A1 Gallium nitride-on-silicon multilayered interface 审中-公开
标题翻译：氮化镓 - 硅多层界面
公开(公告)号：US20080296625A1
公开(公告)日：2008-12-04
申请号：US11810022
申请日：2007-06-04
申请人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
发明人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02642 , H01L21/02647
摘要： A multilayer thermal expansion interface between silicon (Si) and gallium nitride (GaN) films is provided, along with an associated fabrication method. The method provides a (111) Si substrate and forms a first layer of a first film overlying the substrate. The Si substrate is heated to a temperature in the range of about 300 to 800° C., and the first layer of a second film is formed in compression overlying the first layer of the first film. Using a lateral nanoheteroepitaxy overgrowth (LNEO) process, a first GaN layer is grown overlying the first layer of second film. Then, the above-mentioned processes are repeated: forming a second layer of first film; heating the substrate to a temperature in the range of about 300 to 800° C.; forming a second layer of second film in compression; and, growing a second GaN layer using the LNEO process.
摘要翻译：提供硅（Si）和氮化镓（GaN）膜之间的多层热膨胀界面以及相关的制造方法。该方法提供（111）Si衬底并且形成覆盖衬底的第一膜的第一层。将Si衬底加热至约300至800℃的温度，并且第二膜的第一层以压缩形式覆盖第一膜的第一层。使用横向纳米外延过度生长（LNEO）工艺，生长第一GaN层，覆盖第一层第二层膜。然后，重复上述过程：形成第二层第一膜; 将基板加热至约300至800℃的温度; 在压缩中形成第二层第二膜; 并且使用LNEO工艺生长第二GaN层。

60. 发明申请

US20080296616A1 Gallium nitride-on-silicon nanoscale patterned interface 审中-公开
标题翻译：氮化镓 - 硅纳米尺度图案化界面
公开(公告)号：US20080296616A1
公开(公告)日：2008-12-04
申请号：US11809958
申请日：2007-06-04
申请人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
发明人： Tingkai Li , Douglas J. Tweet , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L21/20 , H01L29/20
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate that is heated to a temperature in a range of about 300 to 800° C., and a first film is formed in compression overlying the Si substrate. The first film material may be InP, SiGe, GaP, GaAs, AlN, AlGaN, an AlN/graded AlGaN (Al1−xGaxN (0
摘要翻译：提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。该方法提供加热至约300至800℃范围内的温度的（111）Si衬底，并且第一膜以压缩形式覆盖Si衬底。第一膜材料可以是InP，SiGe，GaP，GaAs，AlN，AlGaN，AlN /分级AlGaN（Al1-xGaxN（0

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