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    • 51. 发明申请
    • Gallium nitride-on-silicon interface
    • 氮化镓在硅界面
    • US20080280426A1
    • 2008-11-13
    • US11801210
    • 2007-05-09
    • Tingkai LiDouglas J. TweetJer-Shen MaaSheng Teng Hsu
    • Tingkai LiDouglas J. TweetJer-Shen MaaSheng Teng Hsu
    • H01L29/739H01L21/20
    • C30B29/406C30B25/183H01L21/02381H01L21/02458H01L21/02505H01L21/0254H01L21/02642H01L21/02647H01L29/2003H01L29/267
    • A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate and forms a first aluminum (Al)-containing film in compression overlying the Si substrate. Nano-column holes are formed in the first Al-containing film, which exposes regions of the underlying Si substrate. A layer of GaN layer is selectively grown from the exposed regions, covering the first Al-containing film. The GaN is grown using a lateral nanoheteroepitaxy overgrowth (LNEO) process. The above-mentioned processes are reiterated, forming a second Al-containing film in compression, forming nano-column holes in the second Al-containing film, and selectively growing a second GaN layer. Film materials such as Al2O3, Si1-xGex, InP, GaP, GaAs, AlN, AlGaN, or GaN, may be initially grown at a low temperature. By increasing the growth temperatures, a compressed layer of epitaxial GaN can be formed on a Si substrate.
    • 提供了一种在硅(Si)和氮化镓(GaN)膜之间形成匹配的热膨胀界面的方法。 该方法提供(111)Si衬底并且在压缩覆盖Si衬底上形成第一含铝(Al)的膜。 在第一含Al膜中形成纳米柱孔,其暴露下面的Si衬底的区域。 从暴露区域选择性地生长GaN层,覆盖第一含Al膜。 使用横向纳米外延生长(LNEO)工艺生长GaN。 重复上述过程,在压缩中形成第二含Al膜,在第二含Al膜中形成纳米柱孔,并选择性地生长第二GaN层。 可以最初在低温下生长诸如Al 2 O 3 3,Si 1-x Ge x,InP,GaP,GaAs,AlN,AlGaN或GaN的膜材料。 通过增加生长温度,可以在Si衬底上形成外延GaN的压缩层。
    • 52. 发明授权
    • Method of fabricating a nickel silicide on a substrate
    • 在衬底上制造硅化镍的方法
    • US06720258B2
    • 2004-04-13
    • US10319313
    • 2002-12-12
    • Jer-shen MaaDouglas J. TweetYoshi OnoFengyan ZhangSheng Teng Hsu
    • Jer-shen MaaDouglas J. TweetYoshi OnoFengyan ZhangSheng Teng Hsu
    • H01L2144
    • H01L21/28518H01L29/456
    • An integrated circuit device, and a method of manufacturing the same, comprises an epitaxial nickel silicide on (100) Si, or a stable nickel silicide on amorphous Si, fabricated with a cobalt interlayer. In one embodiment the method comprises depositing a cobalt (Co) interface layer between the Ni and Si layers prior to the silicidation reaction. The cobalt interlayer regulates the flux of the Ni atoms through the cobalt/nickel/silicon alloy layer formed from the reaction of the cobalt interlayer with the nickel and the silicon so that the Ni atoms reach the Si interface at a similar rate, i.e., without any orientation preference, so as to form a uniform layer of nickel silicide. The nickel silicide may be annealed to form a uniform crystalline nickel disilicide. Accordingly, a single crystal nickel silicide on (100) Si or on amorphous Si is achieved wherein the nickel silicide has improved stability and may be utilized in ultra-shallow junction devices.
    • 集成电路器件及其制造方法包括在(100)Si上的外延硅化镍,或者由钴中间层制造的在非晶Si上的稳定的硅化镍。 在一个实施方案中,该方法包括在硅化反应之前在Ni和Si层之间沉积钴(Co)界面层。 钴中间层通过由钴中间层与镍和硅的反应形成的钴/镍/硅合金层调节Ni原子的通量,使得Ni原子以相似的速率到达Si界面,即没有 任何取向偏好,从而形成均匀的硅化镍层。 可以将镍硅化物退火以形成均匀的结晶二硅化镍。 因此,实现了(100)Si或非晶Si上的单晶硅化镍,其中硅化镍具有改进的稳定性并可用于超浅结结器件中。