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51. 发明授权

US08698119B2 Nonvolatile memory device using a tunnel oxide as a current limiter element 有权
标题翻译：使用隧道氧化物作为电流限制器元件的非易失性存储器件
公开(公告)号：US08698119B2
公开(公告)日：2014-04-15
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/04 , H01L47/00 , H01L21/20 , G11C11/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

52. 发明授权

US08686386B2 Nonvolatile memory device using a varistor as a current limiter element 有权
标题翻译：使用压敏电阻作为限流元件的非易失性存储器件
公开(公告)号：US08686386B2
公开(公告)日：2014-04-01
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

53. 发明授权

US08645951B2 Supporting heterogeneous virtualization 有权
标题翻译：支持异构虚拟化
公开(公告)号：US08645951B2
公开(公告)日：2014-02-04
申请号：US13327852
申请日：2011-12-16
申请人： Yun Wang , Yaozu Dong
发明人： Yun Wang , Yaozu Dong
IPC分类号： G06F9/455 , G06F12/00 , G06F9/00
CPC分类号： G06F9/45545 , G06F9/45554 , G06F9/45558 , G06F9/5077 , G06F12/0246 , G06F12/1036 , G06F12/109
摘要： Machine-readable media, methods, apparatus and system are described. In some embodiments, a virtual machine monitor of a computer platform may comprise a service virtual machine created by the virtual machine monitor partitioning an underlying hardware machine to support execution of a plurality of overlying guest operating systems, wherein the plurality of guest operating systems comprise a guest operating system complying with a non-native guest system architecture different from a host system architecture with which the hardware machine complies. The service virtual machine may further comprise a translation layer to translate instructions from the guest operating system complying with the non-native guest system architecture into instructions complying with the host system architecture.
摘要翻译：描述了机器可读介质，方法，装置和系统。在一些实施例中，计算机平台的虚拟机监视器可以包括由虚拟机监视器创建的服务虚拟机，该虚拟机监视器划分底层硬件机器以支持多个重叠的客户操作系统的执行，其中多个客户操作系统包括符合非本地客户机系统架构的客户机操作系统与硬件机器符合的主机系统架构不同。服务虚拟机还可以包括翻译层，以将符合非本地客户系统体系结构的来宾操作系统的指令转换为符合主机系统体系结构的指令。

54. 发明申请

US20130306271A1 Blowing Device and Method for Using the Blowing Device 审中-公开
标题翻译：吹风装置及使用吹风装置的方法
公开(公告)号：US20130306271A1
公开(公告)日：2013-11-21
申请号：US13518846
申请日：2012-05-24
申请人： Shaoxin Yu , Song Xiao , Yun Wang
发明人： Shaoxin Yu , Song Xiao , Yun Wang
IPC分类号： F28D15/00
CPC分类号： F28D7/0008 , F28D2021/0038
摘要： The present invention provides a blowing device and a method of using the blowing device. The a blowing device comprises a heat generating device, a first chamber having an inlet and an outlet embodied as a slit. A second and third chamber is arranged in juxtapose with the sides of the first chamber. And wherein the second and third chambers are heated by the heat generating device. With the arranged provided above, the blowing device can be prevented from condensed droplets on its surfaces so as to prevent the droplets reentered into the air flow blowing across a surface of an object.
摘要翻译：本发明提供一种吹风装置和使用吹风装置的方法。吹风装置包括发热装置，具有入口和出口的第一室，其实施为狭缝。第二和第三室与第一室的侧面并置布置。并且其中第二和第三室由发热装置加热。通过上述设置，可以防止吹风装置在其表面上凝结的液滴，以防止液滴重新进入气流吹过物体的表面。

55. 发明授权

US08580584B2 System and method for increasing productivity of organic light emitting diode material screening 有权
标题翻译：提高有机发光二极管材料筛选生产率的系统和方法
公开(公告)号：US08580584B2
公开(公告)日：2013-11-12
申请号：US13624102
申请日：2012-09-21
申请人： Yun Wang , Tony P. Chiang , Chi-I Lang
发明人： Yun Wang , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/00
CPC分类号： H01L51/0031 , H01L51/56
摘要： A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.
摘要翻译：提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

56. 发明申请

US20130200325A1 Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element 有权
标题翻译：使用隧道氮化物作为限流元件的非易失性存储器件
公开(公告)号：US20130200325A1
公开(公告)日：2013-08-08
申请号：US13368118
申请日：2012-02-07
申请人： Mihir Tendulkar , Yun Wang
发明人： Mihir Tendulkar , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/32 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流存在于非易失性存储器件中。在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

57. 发明申请

US20130196455A1 TWO-BEAM LASER ANNEALING WITH IMPROVED TEMPERATURE PERFORMANCE 有权
标题翻译：具有改善温度性能的双光束激光退火
公开(公告)号：US20130196455A1
公开(公告)日：2013-08-01
申请号：US13359936
申请日：2012-01-27
申请人： Xiaohua Shen , Yun Wang , Xiaoru Wang
发明人： Xiaohua Shen , Yun Wang , Xiaoru Wang
IPC分类号： H01L21/66 , H05B1/00 , H01L21/263
CPC分类号： H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2101/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.
摘要翻译：公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。

58. 发明授权

US08466446B2 Atomic layer deposition of metal oxide materials for memory applications 有权
公开(公告)号：US08466446B2
公开(公告)日：2013-06-18
申请号：US13612000
申请日：2012-09-12
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
IPC分类号： H01L47/00
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

59. 发明授权

US08388397B2 Liquid crystal cell manufacturing device and method thereof 有权
标题翻译：液晶单元的制造装置及其方法
公开(公告)号：US08388397B2
公开(公告)日：2013-03-05
申请号：US12997896
申请日：2010-11-22
申请人： Yun Wang
发明人： Yun Wang
IPC分类号： H01J9/00 , H01J37/32
CPC分类号： G02F1/1303 , G02F1/133351 , G02F1/1339
摘要： The present invention provides a liquid crystal cell manufacturing device and a method thereof. The liquid crystal cell manufacturing device includes a pre-alignment vacuum chamber, a vacuum lamination chamber and a sealant curing chamber. The pre-alignment vacuum chamber includes a comb-type transferring system for aligning a first substrate with a second substrate and sending them into the vacuum lamination chamber. The vacuum lamination chamber uses a lamination device to laminate the first substrate and the second substrate into a substrate assembly under a nearly vacuum status, and then uses a transferring device to send the substrate assembly to the sealant curing chamber. The sealant curing chamber uses at least one UV spot light source to move above the substrate assembly and irradiate a surface of the substrate assembly to cure at least one sealant in the substrate assembly, and thereby complete manufacture of liquid crystal cells of liquid crystal panels.
摘要翻译：本发明提供一种液晶单元制造装置及其方法。液晶单元制造装置包括预对准真空室，真空层压室和密封剂固化室。预对准真空室包括用于使第一基板与第二基板对准并将它们送入真空层压室的梳状转印系统。真空层压室使用层压装置在几乎真空状态下将第一基板和第二基板层合到基板组件中，然后使用转移装置将基板组件发送到密封剂固化室。密封剂固化室使用至少一个UV斑点光源在基板组件上方移动并照射基板组件的表面以固化基板组件中的至少一个密封剂，从而完成液晶面板的液晶单元的制造。

60. 发明授权

US08370096B2 Method and system of improved uniformity testing 失效
公开(公告)号：US08370096B2
公开(公告)日：2013-02-05
申请号：US12957354
申请日：2010-11-30
申请人： Charlene Chen , Tony P. Chiang , Chi-I Lang , Yun Wang
发明人： Charlene Chen , Tony P. Chiang , Chi-I Lang , Yun Wang
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G01N21/59 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L22/12 , H01L29/1606
摘要： A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

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