专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20070177068A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THEREOF 失效
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20070177068A1
公开(公告)日：2007-08-02
申请号：US11690183
申请日：2007-03-23
申请人： Hongyong Zhang , Takeshi Fukunaga
发明人： Hongyong Zhang , Takeshi Fukunaga
IPC分类号： G02F1/136
CPC分类号： G02F1/13392 , G02F1/1341 , G02F1/1362 , G02F1/136209 , G02F1/136227 , G02F2001/133388
摘要： To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth of the pixel pitch, whereby the high image quality liquid crystal display device with no occurrence of image display failure caused by disturbances of an electric field such as disclination, can be realized.
摘要翻译：为了提供制造高画质液晶显示装置的技术，用于保持液晶层的单元间隙的设定范围根据像素间距的距离来限制，其中单元间隙被设定为距离为像素间距的十分之一，由此可以实现由于诸如旋错的电场的干扰而引起的不产生图像显示故障的高图像质量的液晶显示装置。

52. 发明授权

US07196749B2 Liquid crystal display device and method for fabricating thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07196749B2
公开(公告)日：2007-03-27
申请号：US11276977
申请日：2006-03-20
申请人： Hongyong Zhang , Takeshi Fukunaga
发明人： Hongyong Zhang , Takeshi Fukunaga
IPC分类号： G02F1/1339
CPC分类号： G02F1/13392 , G02F1/1341 , G02F1/1362 , G02F1/136209 , G02F1/136227 , G02F2001/133388
摘要： To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth of the pixel pitch, whereby the high image quality liquid crystal display device with no occurrence of image display failure caused by disturbances of an electric field such as disclination, can be realized.
摘要翻译：为了提供制造高画质液晶显示装置的技术，用于保持液晶层的单元间隙的设定范围根据像素间距的距离来限制，其中单元间隙被设定为距离为像素间距的十分之一，由此可以实现由于诸如旋错的电场的干扰而引起的不产生图像显示故障的高图像质量的液晶显示装置。

53. 发明授权

US06806125B2 Method of manufacturing a thin film transistor device 失效
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US06806125B2
公开(公告)日：2004-10-19
申请号：US09993492
申请日：2001-11-27
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

54. 发明授权

US06365935B1 TFT having hydrogen containing buffer and substrate regions 有权
标题翻译： TFT具有含氢缓冲液和衬底区域
公开(公告)号：US06365935B1
公开(公告)日：2002-04-02
申请号：US09302665
申请日：1999-04-30
申请人： Hongyong Zhang , Takeshi Fukunaga
发明人： Hongyong Zhang , Takeshi Fukunaga
IPC分类号： H01L2900
CPC分类号： H01L27/127 , H01L21/3003 , H01L27/1214 , H01L29/66757
摘要： There is disclosed a method of fabricating a semiconductor device having excellent characteristics. The device comprises a substrate having an insulating surface. A hydrogen-rich region is formed inside the substrate by ion doping. Thermal processing is performed at 300 to 450° C. to thermally diffuse hydrogen ions. Thus, dangling bonds and defect levels in an active layer are compensated. Since the hydrogenation from inside the semiconductor device is enabled in this way, hydrogen termination can be performed at a high efficiency.
摘要翻译：公开了一种制造具有优异特性的半导体器件的方法。该装置包括具有绝缘表面的基底。通过离子掺杂在衬底内部形成富氢区域。在300〜450℃进行热处理，使氢离子热扩散。因此，补偿有源层中的悬挂键和缺陷水平。由于以这种方式实现了半导体器件内的氢化，因此可以高效率地进行氢终止。

55. 发明授权

US5563426A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US5563426A
公开(公告)日：1996-10-08
申请号：US341106
申请日：1994-11-18
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/76 , H01L27/108 , H01L29/04
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1277 , G09G2300/0408
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

56. 发明授权

US5403772A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5403772A
公开(公告)日：1995-04-04
申请号：US160908
申请日：1993-12-03
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1277 , G09G2300/0408
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜的上方或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下退火进行其结晶化。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

57. 发明授权

US08946379B2 Bladder cancer specific ligand peptides 有权
标题翻译：膀胱癌特异性配体肽
公开(公告)号：US08946379B2
公开(公告)日：2015-02-03
申请号：US13497041
申请日：2010-09-23
申请人： Chong-xian Pan , Hongyong Zhang , Kit S. Lam , Olulanu H. Aina
发明人： Chong-xian Pan , Hongyong Zhang , Kit S. Lam , Olulanu H. Aina
IPC分类号： C07K5/00 , G01N33/574 , A61K47/48 , A61K49/00 , B82Y5/00 , C07K7/06 , A61K38/00
CPC分类号： A61K47/48246 , A61K9/0019 , A61K9/51 , A61K38/00 , A61K47/51 , A61K47/64 , A61K47/66 , A61K49/0002 , A61K49/0032 , A61K49/0056 , A61K51/088 , B82Y5/00 , C07K7/06 , G01N33/57407
摘要： The present invention is directed to bladder cancer specific ligand peptides, comprising the amino acid sequence X1DGRX5GF (SEQ ID NO:1), and methods of their use, e.g., for imaging detection for diagnosis of bladder, tumor localization to guide transurethral resection of bladder cancer, imaging detection of bladder cancer for follow-up after the initial treatment that can replace or complement costly cystoscopy, imaging detection of metastatic bladder cancer, and targeted therapy for superficial and metastatic bladder cancer.
摘要翻译：本发明涉及包含氨基酸序列X1DGRX5GF（SEQ ID NO：1）的膀胱癌特异性配体肽及其使用方法，例如用于膀胱诊断的成像检测，用于引导膀胱经尿道切除的肿瘤定位癌症，成像检测膀胱癌的初步治疗后的后续可以替代或补充昂贵的膀胱镜检查，成像检测转移性膀胱癌和靶向治疗浅表和转移性膀胱癌。

58. 发明授权

US08665411B2 Liquid crystal display device having particular conductive layer 失效
标题翻译：具有特定导电层的液晶显示装置
公开(公告)号：US08665411B2
公开(公告)日：2014-03-04
申请号：US13484800
申请日：2012-05-31
申请人： Hongyong Zhang
发明人： Hongyong Zhang
IPC分类号： G02F1/1339 , G02F1/1345
CPC分类号： G02F1/136286 , G02F1/1339 , G02F1/13454
摘要： Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.
摘要翻译：提供了用于统一密封材料的步骤的技术，使得液晶显示装置的成品率和可靠性变高。扫描线的起始膜被图案化，使得在区域R1和R2中形成不电连接的第一层的棱形虚拟布线301，并且从像素部分延伸的布线302形成在区域R3中，并且布线303具有连接端部303a形成在区域R4中。在形成层间绝缘膜之后，将信号线的起始膜图案化，以形成用于第二层的虚拟布线304，以将布线301至303之间的间隙，以及布线305和布线303 从像素部分延伸的相互连接。这允许密封材料形成区域的横截面结构的统一。

59. 发明授权

US08154136B2 Method of fabricating semiconductor device 有权
公开(公告)号：US08154136B2
公开(公告)日：2012-04-10
申请号：US12883526
申请日：2010-09-16
申请人： Hongyong Zhang
发明人： Hongyong Zhang
IPC分类号： H01L23/48
摘要： Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

60. 发明授权

US07985635B2 Laser process 失效
标题翻译：激光工艺
公开(公告)号：US07985635B2
公开(公告)日：2011-07-26
申请号：US11321641
申请日：2005-12-30
申请人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
发明人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
IPC分类号： H01L21/00
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2022 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L21/84 , H01L27/1285
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10 N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.
摘要翻译：一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加密度E（mJ / cm2），条件是其满足关系：log10 N＆nlE; -0.02（E-350），其中N是脉冲激光束的镜头数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式