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51. 发明授权

US5768157A Method of determining an indication for estimating item processing times to model a production apparatus 失效
标题翻译：确定用于估计项目处理时间以对生产设备建模的指示的方法
公开(公告)号：US5768157A
公开(公告)日：1998-06-16
申请号：US561638
申请日：1995-11-22
申请人： Akira Sato
发明人： Akira Sato
IPC分类号： G05B19/418 , B65G61/00 , G05B17/02 , G06F17/18 , G06Q50/00 , G06Q50/04 , G06F9/455
CPC分类号： G05B17/02 , G06F17/18
摘要： A method is disclosed for determining a regression equation for modeling a production apparatus which processes a plurality of items in lots of different sizes. The regression equation is used to estimate a lot processing time of each of the lots. First, data representing the lot processing times is collected from the apparatus and inputted to a computer. Then, a frequency distribution for the lot processing times is determined in connection with each of the lots. Next, a plurality of sets of lot processing times are extracted from each of the frequency distributions by varying the data extraction rate. An average processing time of each of the plurality of sets of lot processing times is calculated. Then, a plurality of regression lines for the average lot processing times are determined for each of the lots. A degree of departure of each of the average lot processing times is determined based on the regression lines. Finally, the regression equation is selected from the regression lines based on the degree of departure.
摘要翻译：公开了一种用于确定用于对处理大量不同尺寸的多个物品的生产设备建模的回归方程式的方法。回归方程用于估计每个批次的批处理时间。首先，从装置收集表示批处理时间的数据并输入到计算机。然后，结合批次确定批次处理时间的频率分布。接下来，通过改变数据提取率，从每个频率分布中提取多组批次处理时间。计算多组批处理时间中的每一组的平均处理时间。然后，针对每个批次确定用于平均批处理时间的多个回归线。基于回归线确定每个平均批处理时间的偏离程度。最后，回归方程根据离散程度从回归线中选出。

52. 发明授权

US5457402A Armature resistance measuring apparatus and method 失效
标题翻译：电枢电阻测量装置及方法
公开(公告)号：US5457402A
公开(公告)日：1995-10-10
申请号：US232503
申请日：1994-04-25
申请人： Akira Sato
发明人： Akira Sato
IPC分类号： G01R27/14 , G01R31/06
CPC分类号： G01R31/346 , G01R27/14
摘要： A method and apparatus for determining the resistance of the coils and commutator connections in an armature of an electric motor wherein a current is generated between a first commutator segment and a commutator segment located at least three segments beyond said first segment, a first voltage is measured across the first commutator segment and an adjacent second commutator segment, a second voltage is measured across the second commutator segment and an adjacent third commutator segment, and a third voltage is measured across a pair of commutator segments which are adjacent to the first commutator segment. After the three voltages are measured, the current is disconnected, and a voltage is generated across two commutator segments spaced at least three segments beyond the first segment. The generated voltage is adjusted so that the voltage measured across the second and third commutator segments equals the previous measurement, and the voltages are remeasured. With the voltages measured across the second and third commutator segments being equal, the connection and coil resistances for the first commutator segment are calculated from the voltage measurements and the value of the generated current. The armature is then indexed, and the measurements repeated, to determine the coil and connection resistance of subsequent segments.
摘要翻译：一种用于确定电动机的电枢中的线圈和换向器连接的电阻的方法和装置，其中在第一换向器段和位于超过所述第一段的至少三个段的换向器段之间产生电流，测量第一电压跨越第一换向器段和相邻的第二换向器段，跨越第二换向器段和相邻的第三换向器段测量第二电压，并且跨越与第一换向器段相邻的一对换向器段测量第三电压。在测量三个电压之后，电流被断开，并且跨越跨越第一段的至少三个段的两个换向器段产生电压。调整所产生的电压，使得在第二和第三换向器片段上测量的电压等于先前的测量值，并重新测量电压。利用在第二和第三换向器段上测量的电压相等，根据电压测量值和所产生的电流的值来计算第一换向器段的连接和线圈电阻。然后将电枢分度，并重复测量，以确定后续段的线圈和连接电阻。

53. 发明授权

US5290709A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5290709A
公开(公告)日：1994-03-01
申请号：US865961
申请日：1992-04-09
申请人： Akira Sato
发明人： Akira Sato
IPC分类号： H01L21/265 , H01L21/266 , H01L21/426
CPC分类号： H01L21/266 , Y10S148/076 , Y10S148/082 , Y10S148/083
摘要： According to the present invention, in the ion implantation step in manufacturing a semiconductor device, a resist of a resist pattern formed on a portion of a semiconductor wafer is removed from the outer peripheral portion of the semiconductor wafer, and ion implantation is performed through the resist pattern.Since the resist is removed from the outer peripheral portion, a contact portion between a semiconductor wafer fixing portion of an ion implantation unit and the semiconductor wafer is conductive. Therefore, charges generated by the ion implantation escape from the wafer fixing portion, and the semiconductor wafer is not charged, thereby preventing electrostatic breakdown.
摘要翻译：根据本发明，在制造半导体器件的离子注入步骤中，从半导体晶片的外周部分去除形成在半导体晶片的一部分上的抗蚀剂图案的抗蚀剂，并且通过抗蚀图案由于抗蚀剂从外周部分去除，离子注入单元的半导体晶片固定部分和半导体晶片之间的接触部分是导电的。因此，由离子注入产生的电荷从晶片固定部分逸出，并且半导体晶片不被充电，从而防止静电击穿。

54. 发明授权

US5260447A Polyhydroxycyclopentane derivatives, their preparation and their therapeutic use 失效
标题翻译：多羟基环戊烷衍生物，其制备及其治疗用途
公开(公告)号：US5260447A
公开(公告)日：1993-11-09
申请号：US835185
申请日：1992-02-13
申请人： Mutsuo Nakajima , Osamu Ando , Kiyoshi Hamano , Shuji Takahashi , Takeshi Kinoshita , Hideyuki Haruyama , Akira Sato , Yasuyuki Takamatsu , Ryuzo Enokita
发明人： Mutsuo Nakajima , Osamu Ando , Kiyoshi Hamano , Shuji Takahashi , Takeshi Kinoshita , Hideyuki Haruyama , Akira Sato , Yasuyuki Takamatsu , Ryuzo Enokita
IPC分类号： C07C215/42 , A61K20060101 , A61K31/13 , C07C20060101 , C07C215/44 , C07D263/52 , C07D413/12 , C12P7/38 , C12P17/14 , C07D261/20 , C07C211/00
CPC分类号： C07D263/52 , C07C215/44 , C07D413/10 , C12P17/14 , C07C2101/06
摘要： 5-Amino-1-(hydroxymethyl)cyclopentane-1,2,3,4-tetraol and 2-amino-4-(hydroxymethyl)-3a,5,6,6a-tetrahydro-4H-cyclopent[d]oxazole-4,5,6-triol, which have the ability to inhibit the activity of sugar hydrolases, especially .beta.-glucosidase and sucrase and can thus be used for the treatment and prophylaxis of tumorous conditions, AIDS, diabetes and obesity, can be prepared by hydrolysis of trehazolin. 2-Amino-4-(hydroxymethyl)-3a,5,6,6a-tetrahydro-4H-cyclopent[d]oxazole-4,5,6-triol can also be prepared by fermentation using newly isolated strains Micromonospora sp. SANK 62390, FERM BP-3521 and Amycolatopsis sp. SANK 60791, FERM BP-3513.
摘要翻译： 5-氨基-1-（羟甲基）环戊烷-1,2,3,4-四醇和2-氨基-4-（羟甲基）-3a，5,6,6a-四氢-4H-环戊二烯并[d]恶唑-4 具有抑制糖水解酶，特别是β-葡糖苷酶和蔗糖酶的活性，因此可用于治疗和预防肿瘤病症，AIDS，糖尿病和肥胖症的能力的5,6-三醇可以通过水解制备的trehazolin。 2-氨基-4-（羟甲基）-3a，5,6,6a-四氢-4H-环戊[d]恶唑-4,5,6-三醇也可以通过使用新分离的小单孢菌属 SANK 62390，FERM BP-3521和Amycolatopsis sp。 SANK 60791，FERM BP-3513。

55. 发明授权

US5252418A Electrophotographic photoreceptor with protruding inorganic insulator pieces and an electrophotographic apparatus utilizing the same 失效
标题翻译：具有突出的无机绝缘体片的电子照相感光体和利用其的电子照相设备
公开(公告)号：US5252418A
公开(公告)日：1993-10-12
申请号：US567180
申请日：1990-08-14
申请人： Fuminori Ishikawa , Akira Sato , Kunihiro Tamahashi , Masatoshi Wakagi , Katsumi Tamura , Masanobu Hanazono , Mitsuyoshi Shoji , Takayuki Nakakawaji , Yutaka Ito , Shigeki Komatsuzaki , Motoo Akagi , Masaaki Imamura
发明人： Fuminori Ishikawa , Akira Sato , Kunihiro Tamahashi , Masatoshi Wakagi , Katsumi Tamura , Masanobu Hanazono , Mitsuyoshi Shoji , Takayuki Nakakawaji , Yutaka Ito , Shigeki Komatsuzaki , Motoo Akagi , Masaaki Imamura
IPC分类号： G03G5/147 , G03G5/14
CPC分类号： G03G5/14704
摘要： An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer with a fluorine-containing lubricant, the surface layer having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer of the present invention can be removed and then re-formed.

56. 发明授权

US4958806A Snowstorm guard fence structures and jet roofs 失效
标题翻译：暴风雪护栏篱笆结构和喷气式屋顶
公开(公告)号：US4958806A
公开(公告)日：1990-09-25
申请号：US284310
申请日：1988-12-14
申请人： Akira Sato , Masatoshi Ono
发明人： Akira Sato , Masatoshi Ono
IPC分类号： E01F7/02
CPC分类号： E01F7/025
摘要： A snowstorm guard fence structure is constructed by anchoring a wall, which overhangs at an upward slope to a road side, to a supporting wall disposed along one side of the road. The constructed structure can be placed on sides of roads, has a space to discard the snow removed from the road, and also is effective for preventing snow accumulation on the road regardless of the degree of wind velocity and the presence of shelter structures. A jet roof is constructed by disposing a plurality of props on a slant and providing a plurality of panels between the props at spaces for jet openings so that jet openings are gradually narrowed toward the road side. The constructed jet roof is effective for preventing snow accumulation on the road regardless of the condition of wind velocity and the presence of shelter structures.
摘要翻译：通过将沿着向上倾斜的一侧的墙壁锚固在一侧的路侧的支撑壁上，构成一个暴风雪护栏围栏结构。构造的结构可以放置在道路的两侧，具有放弃从道路上除去的积雪的空间，并且也可以有效地防止道路上的积雪，而不管风速和风挡结构的存在。通过将多个道具设置在斜面上并且在用于喷射开口的空间处的道具之间的道具之间提供多个面板，使得射流开口朝向路侧逐渐变窄而构成喷射屋顶。建造的喷射屋顶有效防止道路上的积雪，无论风速和住房结构的存在如何。

57. 发明授权

US4946957A Anti-tumor DC-52 derivatives 失效
标题翻译：抗肿瘤DC-52衍生物
公开(公告)号：US4946957A
公开(公告)日：1990-08-07
申请号：US400883
申请日：1989-08-30
申请人： Hiromitsu Saito , Yoichi Uosaki , Akira Sato , Tadashi Hirata , Makoto Morimoto , Tadashi Ashizawa
发明人： Hiromitsu Saito , Yoichi Uosaki , Akira Sato , Tadashi Hirata , Makoto Morimoto , Tadashi Ashizawa
IPC分类号： A61K31/495 , A61P31/04 , C07D471/18 , C07D498/22
CPC分类号： C07D471/18 , C07D498/22
摘要： The present invention relates to novel derivatives of DC-52 represented by the following formula (I): ##STR1## [wherein X is chlorine, bromine, iodine, hydroxyl, formyl, hydroxyiminomethyl, cyano, nitro, amino or lower alkanoylamino; and Y is hydroxyl and Z is cyano, or Y and Z represent --O-- in the form of --Y--Z--]. These compounds and pharmacologically acceptable salts thereof have high anti-tumor activity.

58. 发明授权

US4857802A Thin film EL element and process for producing the same 失效
标题翻译：薄膜EL元件及其制造方法
公开(公告)号：US4857802A
公开(公告)日：1989-08-15
申请号：US100758
申请日：1987-09-24
申请人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
发明人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
IPC分类号： C23C14/00 , C23C14/08 , H05B33/10 , H05B33/12 , H05B33/22
CPC分类号： H05B33/10 , C23C14/0036 , C23C14/088 , H05B33/22
摘要： A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.
摘要翻译： 1.一种薄膜EL元件，其特征在于，包括：绝缘基板，透明电极，第一绝缘层，发光层，第二绝缘层和背面电极，绝缘层由具有钙钛矿晶体结构的材料构成，例如SrTiO 3，PbTiO 3或BaTiO 3层，特别是SrTiO 3层。具有钙钛矿晶体结构的材料具有增加的（111）面取向，使得（111）面与（110）面的衍射强度比I（111）/ I（110）大于0.5。该材料可以是具有（111）面取向的单晶。该材料通过溅射沉积，在衬底温度不低于200℃，直到绝缘衬底的软化点，并且压力不大于1×10 -2 Torr。该材料具有高介电常数，高介电强度，因此具有低驱动电压的元件性能的高可靠性。

59. 发明授权

US4822882A DC-52 derivatives and their antitumor use 失效
标题翻译： DC-52衍生物及其抗肿瘤用途
公开(公告)号：US4822882A
公开(公告)日：1989-04-18
申请号：US102359
申请日：1987-09-29
申请人： Hiromitsu Saito , Yoichi Uosaki , Akira Sato , Tadashi Hirata , Makoto Morimoto , Tadashi Ashizawa
发明人： Hiromitsu Saito , Yoichi Uosaki , Akira Sato , Tadashi Hirata , Makoto Morimoto , Tadashi Ashizawa
IPC分类号： C07D471/18 , C07D498/22 , A61K31/495 , C07D487/18
CPC分类号： C07D471/18 , C07D498/22
摘要： Compounds represented by the following formula or by the corresponding hydroquinone type formula: ##STR1## in which R.sup.1 and R.sup.2 are independently hydrogen, lower alkoxy, azido, amino, lower alkylamino, di-lower alkylamino, cyclic amino, lower alkylthio or unsubstituted or substituted arylthio; and X represents hydroxyl and Y represents cyano or X and Y together represents --O-- in the form of --X--Y--, have an excellent antitumor activity.

60. 发明授权

US4818351A Method for the surface treatment of an iron or iron alloy article 失效
标题翻译：铁或铁合金制品的表面处理方法
公开(公告)号：US4818351A
公开(公告)日：1989-04-04
申请号：US80828
申请日：1987-07-24
申请人： Tohru Arai , Hironori Fujita , Yoshihiko Sugimoto , Yukio Ohta , Shigeo Moriyama , Akira Sato
发明人： Tohru Arai , Hironori Fujita , Yoshihiko Sugimoto , Yukio Ohta , Shigeo Moriyama , Akira Sato
IPC分类号： C23C12/02 , C23C8/32
CPC分类号： C23C12/02
摘要： A surface layer which is composed of the carbonitride of at least one of vanadium and chromium is formed on an article made of iron or an iron alloy if the article, a material containing at least one of vanadium and chromium and a treating agent are heated together. The treating agent may be composed of at least one of the cyanides and cyanates of alkali metals and alkaline earth metals. The layer adhering closely to the article can be formed efficiently at a temperature which is so low that virtually no thermal strain may develop in the article.
摘要翻译：如果将含有钒和铬中的至少一种的材料和处理剂一起加热到一起，则在由铁或铁合金制成的制品上形成由钒和铬中的至少一种的碳氮化物组成的表面层。处理剂可以由碱金属和碱土金属的氰化物和氰酸盐中的至少一种组成。可以在如此低的温度下有效地形成附着在制品上的层，实际上在制品中几乎不产生热应变。

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